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100V N-Channel Mosfets: General Description
100V N-Channel Mosfets: General Description
General Description
BVDSS RDSON ID
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This 100V 13mΩ 80A
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching Features
performance, and withstand high energy pulse in the 100V,80A, RDS(ON) =13mΩ@VGS = 10V
avalanche and commutation mode. These devices are Improved dv/dt capability
well suited for high efficiency fast switching applications. Fast switching
100% EAS Guaranteed
Green Device Available
TO220 Pin Configuration D Applications
Networking
Load Switch
LED applications
G
Quick Charger
S S
D
G
Thermal Characteristics
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100V N-Channel MOSFETs PDP0902
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Off Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
△ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.05 --- V/℃
VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
IDSS Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=125℃ --- --- 10 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
On Characteristics
VGS=10V , ID=15A --- 11 13 mΩ
RDS(ON) Static Drain-Source On-Resistance VGS=6V , ID=10A --- 11.5 14 mΩ
VGS=4.5V , ID=8A --- 12.5 18 mΩ
VGS(th) Gate Threshold Voltage 1 2 3 V
VGS=VDS , ID =250uA
△ VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃
gfs Forward Transconductance VDS=10V , ID=3A --- 10 --- S
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100V N-Channel MOSFETs PDP0902
Square Wave Pulse Duration (s) VDS , Drain to Source Voltage (V)
Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area
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100V N-Channel MOSFETs PDP0902
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100V N-Channel MOSFETs PDP0902
TO220 PACKAGE INFORMATION