SEMICONDUCTOR

RoHS
I2N65 Series RoHS
Nell High Power Products
N-Channel Power MOSFET
12A, 650Volts

DESCRIPTION
D
The Nell 12N65 is a three-terminal silicon device
with current conduction capability of 12A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 650V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as
G GD
switched mode power supplies, DC to DC converters, D
S S
PWM motor controls, bridge circuits and general
purpose switching applications. TO-220AB TO-220F
(12N65A) (12N65AF)
To minimize on-state resistance, provide superior
switching performance and commutation mode. D (Drain)

FEATURES
G
RDS(ON) = 0.85Ω @ VGS = 10V (Gate)

Ultra low gate charge(54nC max.)

S (Source)
Low reverse transfer capacitance
(C RSS = 25pF typical)
Fast switching capability
100% avalanche energy specified PRODUCT SUMMARY
Improved dv/dt capability ID (A) 12
150°C operation temperature VDSS (V) 650
RDS(ON) (Ω) 0.85 @ V GS = 10V
QG(nC) max. 54

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 650
V DGR Drain to Gate voltage R GS =20KΩ 650 V
V GS Gate to Source voltage ±30
T C =25°C 12
ID Continuous Drain Current
T C =100°C 7.4
A
I DM Pulsed Drain current(Note 1) 48
I AR Avalanche current(Note 1) 12
E AR Repetitive avalanche energy(Note 1) l AR =12A, R GS =50Ω, V GS =10V 24
mJ
E AS Single pulse avalanche energy(Note 2) l AS =12A, L =10mH 790
dv/dt Peak diode recovery dv/dt(Note 3) 4.5 V /ns
TO-220AB 225
PD Total power dissipation T C =25°C W
TO-220F 51
TJ Operation junction temperature -55 to 150
T STG Storage temperature -55 to 150 ºC
TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300
Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)

Note: 1. Repetitive rating: pulse width limited by junction temperature.

2 . l AS =12A, L=10mH, V DD =50V, R GS =25Ω, starting T J =25°C.
3 . I SD ≤ 12A, di/dt ≤ 200A/µs, V DD ≤ V (BR)DSS , starting T J = 25 °C.

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 SEMICONDUCTOR
RoHS
I2N65 Series RoHS
Nell High Power Products

THERMAL RESISTANCE
SYMBOL PARAMETER Min. Typ. Max. UNIT

TO-220AB 0.56
Rth(j-c) Thermal resistance, junction to case ºC/W
TO-220F 2.4

TO-220AB 62.5
Rth(j-a) Thermal resistance, junction to ambient ºC/W
TO-220F 62.5

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT

OFF CHARACTERISTICS

V(BR)DSS Drain to source breakdown voltage I D = 250µA, V GS = 0V 650 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 250 µ A, V DS =V GS 0.7 V/ºC

V DS =650V, V GS =0V T C = 25°C 10

I DSS Drain to source leakage current μA
V DS =520V, V GS =0V T C =125°C 100

Gate to source forward leakage current V GS = 30V, V DS = 0V 100

I GSS nA
Gate to source reverse leakage current V GS = -30V, V DS = 0V -100

ON CHARACTERISTICS

R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 6A 0.65 0.85 Ω

V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2 4 V

DYNAMIC CHARACTERISTICS

C ISS Input capacitance 1480 1900

C OSS Output capacitance V DS = 25V, V GS = 0V, f =1MHz 200 270 pF

C RSS Reverse transfer capacitance 25 35

RG Gate resistance V DS = 0V, V GS = 0V, f =1MHz 0.2 1.2 Ω

SWITCHING CHARACTERISTICS

t d(ON) Turn-on delay time 30 70

tr Rise time V DD = 325V, V GS = 10V 115 240
ns
t d(OFF) Turn-off delay time I D = 12A, R GS = 25Ω (Note1,2) 95 200

tf Fall time 85 180

QG Total gate charge 42 54

V DD = 520V, V GS = 10V
Q GS Gate to source charge 8.6 nC
I D = 12A, (Note1,2)
Q GD Gate to drain charge (Miller charge) 21

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 SEMICONDUCTOR
RoHS
I2N65 Series RoHS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT
VSD Diode forward voltage I SD = 12A, V GS = 0V 1.4 V
I S (I SD ) Continuous source to drain current Integral reverse P-N junction 12
diode in the MOSFET
D (Drain)

A
I SM Pulsed source current
G
(Gate) 48
S (Source)

t rr Reverse recovery time I SD = 12A, V GS = 0V, 380 ns

Q rr Reverse recovery charge dI F /dt = 100A/µs

3.5 μC
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% .
2. Essentially independent of operating temperature.

ORDERING INFORMATION SCHEME

12 N 65 A

Current rating, ID
12 = 12A

MOSFET series
N = N-Channel

Voltage rating, VDS

65 = 650V

Package type
A = TO-220AB
AF = TO-220F

■ TEST CIRCUITS AND WAVEFORMS

Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms

D.U.T. + V GS Period
P.W.
(Driver) P.W. D=
Period
V DS
V GS =10V
-
l FM , Body Diode forward current
+ l SD
(D.U.T) di/dt
- L
l RM

Body Diode Reverse Current

RG
Body Diode Recovery dv/dt
Driver V DD V DS
* dv/dt controlled by R G (D.U.T)
Same Type * l SD controlled by pulse period V DD
V GS * D.U.T.-Device under test
as D.U.T.

Body Diode Forward Voltage Drop

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 SEMICONDUCTOR
RoHS
I2N65 Series RoHS
Nell High Power Products

■ TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig.2A Switching test circuit Fig.2B Switching Waveforms

RL V DS
V DS 90%

V GS

RG

V DD
D.U.T. 10%
V GS
10V
t d(ON) t d(OFF)
Pulse Width ≤ 1µs tR
Duty Factor ≤ 0.1% tF

Fig.3A Gate charge test circuit Fig.3B Gate charge waveform

V GS

Same Type as
50kΩ QG
D.U.T.
12V
10V
0.2µF 0.3µF

V DS
Q GS Q GD

V GS
D.U.T.

3mA

Charge

Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching
waveforms

L
V DS

BV DSS

l AS

RG V DD
l D(t)
V DS(t)
D.U.T. V DD
10V

tp
Time
tp

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 SEMICONDUCTOR
RoHS
I2N65 Series RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS

Fig.1 On-State characteristics Fig.2 Transfer characteristics

Top: V GS
15V
10V
8V

Drain-Current, l D (A)
Drain Current,l D (A)

10 1 7V 10 1
6.5V 150°C
6V
Bottom: 5.5V
25 °C
-55°C
10 0 10 0

Notes: Notes:
1. 250µs pulse test 1. V DS =50V
2. T C = 25°C 2. 250µs pulse width
10 - 1 1 10 - 1
10 - 10 0 10 1 2 4 6 8 10

Drain Source voltage, V DS (V) Gate-Source voltage, V GS (V)

Fig.3 On-Resistance variation vs. Fig.4 Body diode forward voltage variation vs
Drain current and Gate voltage Source current and Temperature
Drain-Source On-Resistance, R DS(ON) (Ω)

1.8
Reverse drain current, l DR (A)

1.6

1.4 V GS = 10V
10 1
1.2
V GS = 20V
1.0

0.8 150°C
10 0 25 °C
0.6

0.4 Notes:
0.2 1. V GS =0V
2. 250µs pulse Test
0 10 - 1
0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Drain current, l D (A) Source-Drain voltage, V SD (V)

Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics

3000 12
C iss = C gs +C gd ( C ds = shorted )
C oss = C ds +C gs
Gate-Source voltage, V GS (V)

C rss = C gd 10 V DS =120V
2400
V DS =300V
Capacitance (pF)

8 V DS =520V
1800 C iss
C oss
6

1200 Notes:
1. V GS =0V 4
2. f=1MHz
C rss
600
2 Notes:
1. l D =1 2A
0 0
10 -1 10 0 10 1 0 5 10 15 20 25 30 35 40 45

Drain-Source Voltage, V DS (V) Total gate charge ,Q G (nC)

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 SEMICONDUCTOR
RoHS
I2N65 Series RoHS
Nell High Power Products

Fig.7 Maximum safe operating area

Operation in This Area is Limited by R DS(ON)

10 2
Drain current, l D (A)

100µs
10 1
1ms

10ms
10 0
100ms

DC
10 -1 Note:
1. T C = 25°C
2. T J = 150°C
3. Single Pulse

10 -2
10 0 10 1 10 2 10 3

Drain-to-Source voltage, V DS (V)

Fig.8 Transient thermal response curve

Thermal response, R th(j-c) (t)

D = 0.5
10 0

0.2
Notes:
0.1 1.R th(j-c) (t)=2.4W Max.
2.Duty factor, D=t 1 /t 2
0.05 3.T JM -T C =P DM×R th(j-c) (t)
10 -1 0.02
0.01
PDM

(Single Pulse) t1

10 -2 t2

Thermal response, Rth(j-c) 10 -5 10 -4 10 -3 10 -2 10 -1 10 -0 10 1

Rectangular Pulse Duration, t 1 (sec)

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 SEMICONDUCTOR
RoHS
I2N65 Series RoHS
Nell High Power Products

TO-220AB

10.54 (0.415) MAX.

9.40 (0.370) 3.91 (0.154) 4.70 (0.185)

9.14 (0.360) 3.74 (0.148) 4.44 (0.1754)
1.39 (0.055)
2.87 (0.113)
1.14 (0.045)
2.62 (0.103)

3.68 (0.145)
3.43 (0.135)
16.13 (0.635) 15.32 (0.603)
15.87 (0.625) 14.55 (0.573)
PIN 8.89 (0.350)
G D S 8.38 (0.330)
4.06 (0.160) 29.16 (1.148)
3.56 (0.140) 28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045) 14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095) 0.90 (0.035)
2.65 (0.104) 0.70 (0.028) D (Drain)
5.20 (0.205) 0.56 (0.022)
2.45 (0.096)
4.95 (0.195) 0.36 (0.014)

G
(Gate)

S (Source)

All dimensions in millimeters(inches)

10.6
TO-220F 10.4 3.4
3.1

2.8
2.6

3.7
3.2 7.1
6.7

16.0
15.8
16.4
15.4 D
G S 10°
3.3
3.1

13.7
13.5

0.9 0.48
2.54 0.7 0.44
TYP 2.54
2.85
TYP
2.65

D (Drain)
4.8
4.6

G
(Gate)

S (Source)

All dimensions in millimeters

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