SiC POWER MODULES

Innovative Power Devices
for a Sustainable Future
Traction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances...
Power devices are a key component in power electronics products for contributing to the realization of a low-carbon
society. Attracting attention as the most energy-efficient power device is one made using new material,
silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and
significant energy savings for power electronics devices. Mitsubishi Electric began the development of elemental
SiC technologies in the early 1990s and has since introduced them to achieve practical energy-saving effects for
products manufactured using SiC. Innovative SiC power modules are contributing to the realization of a low-carbon
society and more affluent lifestyles.
SiC: Silicon Carbide-Compound that fuses silicon and carbon at a ratio of one-to-one.

Traction
• Size and weight of traction inverters reduced
• Regenerative performance enhanced
• Noise reduced
Home appliances
• Energy savings increased
• Cooling system more compact
• Equipment more compact/thinner

Industrial equipment
• High torque, high speed, size reduced
• Cooling system more compact
• Manufacturing productivity enhanced
Merits of Incorporating
SiC Power Modules
Electric/hybrid vehicles
• Power loss reduced
• Cooling system more compact
• Regenerative power used efficiently

Renewable energies
• Energy conversion efficiency improved
• Passive components downsized
• Quieter high-speed operation Building facilities
• Power loss reduced
• Greater layout freedom as the result of smaller equipment

1
SiC with superior characteristics
Si SiC
Power loss reduced
Gate Gate
SiC has approximately 10 times the critical breakdown
Source Source Source Source
n+ n+ n+ n- n+ strength of silicon. Furthermore, the drift layer that is a
p p p p
n- main cause of electrical resistance is one-tenth of the
SiC substrate
Drain electrode
thickness. This allows a large reduction in electrical
SiC MOSFET structure resistance and, in turn, reduces power loss. This SiC
characteristic enables dramatic reductions in conductivity

Current flow
1 loss and switching loss in power devices.

Si substrate
10
Drain electrode Large reduction in
Si MOSFET structure electrical resistance

High-temperature operation
SiC Conduction band High temperature When the temperature increases, electrons are exited to
the conduction band and the leakage current increases.
At times, this results in abnormal operation.
However, SiC has three times the band gap width of
Band gap Band gap is approx. silicon, preventing the flow of leakage current and enabling
3 times that of Si operation at high temperatures.

Valence band

Hybrid SiC power modules

High-speed switching operation
Si With SiC, owing to the high dielectric breakdown, power
Turn-on switching waveform loss is reduced and high-voltage is easier to achieve, it is
SiC
High-speed possible to use Schottky Barrier Diodes (SBDs), which
switching operations realized cannot be used with Si. SBDs can realize high-speed
switching motion because they don't have accumulation
Ic:500A/div carriers. As a result, high-speed switching can be realized.

Vce:250V/div

t:1µs/div

Heat dissipation
Si SiC SiC has three times the heat conductivity of silicon,
which improves heat dissipation.
Thermal
conductivity
rate is approx.
3 times
that of Si

SiC power modules appropriated by application

Rating Insert
Application Product name Model Connection States pages
Voltages[V] Current[A]
PMH200CS1D060 600 200 6-in-1 Commercially available
Hybrid SiC-IPM
PMH75-120-Sxxx＊ Sample available P3
1200 75 6-in-1
Full SiC-IPM PMF75-120-Sxxx＊ Sample available
FMF400BX-24A 1200 400 4-in-1 Sample available
Full SiC Power Modules P4
FMF800DX-24A 1200 800 2-in-1 Sample available
Industrial CMH100DY-24NFH 100
equipment CMH150DY-24NFH 150
Hybrid SiC Power Modules for CMH200DU-24NFH 200
High-frequency Switching 1200 2-in-1 Sample available P5
Applications CMH300DU-24NFH 300
CMH400DU-24NFH 400
CMH600DU-24NFH 600
Large Hybrid SiC DIPIPMTM for PV Application PSH50YA2A6 600 50 4-in-1 Commercially available
P6
Traction Hybrid SiC Power Modules CMH1200DC-34S 1700 1200 2-in-1 Commercially available
Home Hybrid SiC DIPPFCTM PSH20L91A6-A Commercially available
600 20Arms Interleaved P7
appliances Full SiC DIPPFCTM PSF20L91A6-A Commercially available
＊Tentative No.

2
 600V/200A Hybrid SiC-IPM for Industrial Equipment
PMH200CS1D060 New

SiC-SBD incorporated in an IPM with a built-in drive circuit and protection functions
Power loss reduction of approx. 20% contributes to
enhancing the performance of industrial machinery
Features
• Hybrid combination of SiC-SBD and IGBT with current and temperature sensors
implemented for IPM supplies high functionality and low loss enabling high torque
and motor speed
• Recovery loss (Err) reduced by 95% compared to the conventional product*
• Package compatible with the conventional product* making replacement possible
* Conventional product: Mitsubishi Electric S1 Series PM200SC1D060

FWD_SW IGBT_SW
Internal circuit diagram : SiC-SBD Power loss comparison FWD_DC IGBT_DC

Approx.

Power loss [W] 20%

reduction

U V W

Si-IPM Hybrid SiC-IPM

N Condition:Vcc=300V, Io=85Arms, fc=15kHz, VD=15V,P.F=1, Modulation=1,
three-phase modulation, Tj=125˚C

1200V/75A Hybrid/Full SiC-IPM for Industrial Equipment

PMH75-120-Sxxx＊/PMF75-120-Sxxx＊ Sample available
＊Tentative No.

Built-in drive circuit and protection functions realize high functionality

Features Main specifications
• Incorporates SiC-MOSFET with current sensor and Rating 1200V/75A 6in1
built-in drive circuit and protection functions to • Built-in drive circuit
deliver high functionality Mounted • Under-voltage protection
• Short-circuit protection
• Significant reduction in power loss compared to the Functions
• Over temperature protection
conventional product* (Monitoring IGBT chip surface)
• Package compatible with the conventional product*
* Conventional product: Mitsubishi Electric IPM L1 Series PM75CL1A120

FWD_SW Tr_SW
Internal circuit diagram :SiC-MOSFET :SiC-SBD Power loss comparison FWD_DC Tr_DC

Full SiC-IPM
P SiC-MOSFET
with current sense terminal
Approx. Approx.
Power loss [W]

25% 70%
Drain reduction reduction

Gate
U V W

Sense Source
Si-IPM Hybrid SiC-IPM Full SiC-IPM
N Condition:Vcc=600V, Io=31Arms (assuming a 15kW inverter), fc=15kHz, P.F=0.9,
Modulation=1 ,three-phase modulation, Tj=125˚C

3
 1200V/400A・1200V/800A Full SiC Power Modules
for Industrial Equipment
FMF400BX-24A/FMF800DX-24A Sample available
Contributes to reducing size/weight of industrial-use inverters
with the mounting area reduced by approx. 60%
Features
• Power loss reduced approx. 70% compared to the conventional product*
• Low-inductance package adopted to deliver full SiC performance
• Contributes to realizing smaller/lighter inverter equipment by significantly reducing
the package size and realizing a mounting area approx. 60% smaller compared to
the conventional product*
＊Conventional product:Mitsubishi Electric CM400DY-24NF(1200V/400A 2in1) 2pcs

Product lineup Comparison with conventional product package

Applications Rated Reted Circuit Package size

voltage current configration (D ×W)
Si Power module
400A 4-in-1 1200V/400A(2-in-1) 2pcs
Industrial
1200V 92.3 × 121.7mm
equipment
800A 2-in-1

Full SiC Power module

Approx. 1200V/400A(4-in-1) 1pcs
60% or
Footprint 1200V/800A(2-in-1) 1pcs
reduction

Internal circuit diagram

1200V/400A 1200V/800A
Full SiC Power module :SiC-MOSFET :SiC-SBD Full SiC Power module :SiC-MOSFET :SiC-SBD

Power loss comparison

1200V/400A FWD_SW Tr_SW
1200V/800A FWD_SW Tr_SW
Full SiC Power module FWD_DC Tr_DC Full SiC Power module FWD_DC Tr_DC
Power loss [W]

Power loss [W]

Approx. Approx.
70% 70%
reduction reduction

IGBT module(Si) Full SiC module IGBT module(Si) Full SiC module
Condition:Vcc=600V, Io=110Arms (assuming a 55kW inverter), fc=15kHz, P.F=0.8, Condition:Vcc=600V, Io=222Arms (assuming a 110kW inverter), fc=15kHz, P.F=0.8,
Modulation=1 ,three-phase modulation, Tj=125˚C Modulation=1 ,three-phase modulation, Tj=125˚C

4
 Hybrid SiC Power Modules for High-frequency
Switching Applications Sample available

For optimal operation of power electronics devices that conduct high-frequency switching
Contributes to realizing highly efficient machinery that is smaller and lighter by reducing
power loss and enabling higher frequencies
Features
• Power loss reduction of approx. 40% contributes to higher efficiency, smaller size
and weight reduction of total system
• Suppresses surge voltage by reducing internal inductance
• Package compatible with the conventional product*
* Conventional product: Mitsubishi Electric NFH Series IGBT Modules

FWD_SW Tr_SW
Internal circuit diagram :SiC-SBD Power loss comparison FWD_DC Tr_DC
G2

Approx.
40%
Power loss [W]
E2

reduction

C2E1 E2 C1
E1

CM600DU-24NFH CMH600DU-24NFH
(Si-IGBT) (Hybrid SiC)
G1

Condition:Vcc=600V, Io=600Ap, fc=15kHz, P.F=0.8, Modulation=1,

three-phase modulation, Tj=125˚C

Recovery waveform (FWD) Product lineup

Rated Rated Circuit External size
Applications Model
voltage current configuration (DxW)

CMH100DY-24NFH 100A 48 × 94mm

CM600DU-24NFH
(Si-IGBT)
CMH150DY-24NFH 150A 48 × 94mm

IE:100A/div
CMH200DU-24NFH 200A 62 × 108mm
Industrial
1200V 2-in-1
CMH600DU-24NFH
equipment
CMH300DU-24NFH 300A 62 × 108mm
(Hybrid SiC)

CMH400DU-24NFH 400A 80 × 110mm

200ns/div
CMH600DU-24NFH 600A 80 × 110mm

5
 600V/50A Large Hybrid SiC DIPIPMTM for PV Application
PSH50YA2A6 New

More efficient power modules for PV power conditioner applications

Features
・Hybrid structure achieved with SiC Schottky barrier diode
and 7th-generation. IGBT chips
・Power loss reduction of approx. 25% compared to the conventional product*
・Helps downsize PV inverter system thanks to modified short-circuit protection scheme
*Conventional product:Mitsubishi Electric Large DIPIPMTM PS61A99

FWD_SW IGBT_SW
Internal circuit diagram :SiC-SBD Power loss comparison FWD_DC IGBT_DC

P
VWP1
VVP1
WP
LVIC

LVIC

VP Approx.
VVPC
VWPC Power Loss [W] 25%
reduction

V
VN1 W
VN
WN LVIC
FO N
VNC W Si DIPIPMTM Hybrid SiC DIPIPMTM
N Condition：Vcc=300V, Io=25Arms, PF=0.8, fc=10kHz, Tj=125℃
CFO CIN VSC V

1700V/1200A Hybrid SiC Power Modules for Traction Inverters

CMH1200DC-34S New

High-power/low-loss/highly reliable modules appropriate for use in traction inverters

Features Main specifications
• Power loss reduced approximately 30% Max.operating temperature 150˚C
Module
compared to the conventional product* Isolation voltage 4000Vrms
Collector-emitter saturation voltage 2.3V
• Highly reliable design appropriate for Si-IGBT
turn-on 140mJ
@150˚C Switching loss
use in traction 850V/1200V turn-off 390mJ
• Package compatible with the SiC-SBD Emitter-collector voltage 2.3V
@150˚C Capacitive charge 9.0µC
conventional product*
* Conventional product: Mitsubishi Electric Power Module
CM1200DC-34N

FWD_SW IGBT_SW
Internal circuit diagram :SiC-SBD Power loss comparison FWD_DC IGBT_DC

4 2
(E1) (C2)
Approx.
Power loss [W]

E1 C2
30%
reduction

G1
G2
Si-IGBT Si-IGBT
C1 E2

(C1) (E2) CM1200DC-34N CMH1200DC-34S

3 1 Condition:Vcc=850V, Io=600Arms, fc=1kHz, P.F=1, Modulation=1,
three-phase modulation, Tj=125˚C

6
 Hybrid SiC DIPPFCTM/Full SiC DIPPFCTM for Home Appliances
PSH20L91A6-A New / PSF20L91A6-A New

Utilizing SiC enables high-frequency switching and contributes to

reducing the size of peripheral components

Features
• Incorporating SiC chip in the Super mini package widely used in home appliances
• The SiC chip allows high-frequency switching (up to 40kHz) and contributes to
downsizing the reactor, heat sink and other peripheral components
• Adopts the same package as the Super mini DIPIPMTM to eliminate the need for a
spacer between the inverter and heat sink and to facilitate its implementation

Internal block diagram (Full SiC DIPPFCTM) Power loss comparison

FWD_SW Tr_SWoff Tr_DC
:SiC-MOSFET :SiC-SBD
FWD_DC Tr_SWon

P1
P2
VD Approx.
Power loss [W]

Vin1
45%
L1 reduction
Vin2 L2
LVIC
Fo
CFo
GND N2

Cin1 N1 Si DIPPFC™ Full SiC DIPPFC™

Cin2 Condition:Vin=240Vrms, Vout=370V, Ic=20Arms, fc=40kHz, Tj=125˚C

Interleaved PFC circuit configuration (for Hybrid SiC DIPPFCTM) :SiC-SBD

Hybrid SiC DIPPFC™

P1
High-frequency drive enables
VD reactor sized to be reduced
P2
Vin1 L1

Vin2 L2
MCU Fo LV Si-IGBT
CFo IC N2
AC input

GND N1
+
To inverter part

PFC circuit and drive IC integrated making

it possible to reduce size including
smaller mounting area and simplified layout pattern

Merits of combined use of SiC DIPIPMTM and DIPPFCTM

Interleave PFC circuit in the case of discrete element configuration In the case of using
SiC DIPIPMTM and DIPPFCTM configuration

High adjustment
spacer

Di Tr Di Tr DIPIPMTM SiC DIPPFCTM DIPIPMTM

PFC control and protection circuit parts

No need to use spacer for adjusting Integration of PFC circuit and drive IC made it possible to
Merit 1 height when attaching heat sink Merit 2 reduce the mounting area and make component more
compact such as simplifying the wiring pattern

7
SiC Power Module Lineup
Unit : mm

600V/200A Hybrid SiC-IPM 1200V/75A Hybrid/Full SiC-IPM 1200V/400A，1200V/800A

for Industrial Use for Industrial Use Full SiC Power Modules
PMH200CS1D060 PMH75-120-Sxxx＊ for Industrial Use
PMF75-120-Sxxx＊ FMF400BX-24A
120 11 120 FMF800DX-24A
7 106 ±0.3 7 106

(3)
3.25
2-2.54

2-2.54

2-2.54 19.75 16 16 16 15.25 2-φ 5.5

7
(20.5)
13

17
23.79 10.16 10.16 10.16 5-2.54 19.75 3-2 3-2 3-2 6-2 MOUNTING
HOLES
4.06 18.8 57.15 19.05

3.5
8.5

2-φ 5.5

12

3.81
3.81

3.81
3.81
3.81
1 4 7 10 15
MOUNTING
1.65

17.5
67.4 HOLES 121.7
50
39

5.57 9

55
110±0.5
2-R7 1 5 9 13 19

16.5

14.5 17.5
4-φ5.5 7.75 94.5
25

MOUNTING 41.35 39

32
10 HOLES 44 22
7 5-M4 NUT
2.5

11.75
13.5
15 19 19 19 19 6-M5
SCREWING 10.75

13.64
NUTS 12
DEPTH 7.5
32.75 23 23 23
15- 0.64
11.6 1.1

12 (SCREWING DEPTH)

50±0.5
92.3

57.5
62
2

3
19- 0.5

13.64
42.7
31.2
30

LABEL
28

6.5

13

(21.14)
31

3.75
12 6

6.5
21.14 22 23.72 22
6-M6 NUTS
18.49 39 39
＊Tentative No. 6.72

Hybrid SiC Power Modules for Hybrid SiC Power Modules for Hybrid SiC Power Modules for
High-frequency Switching Applications High-frequency Switching Applications High-frequency Switching Applications
CMH100DY-24NFH CMH 200DU-24NFH CMH 400DU-24NFH
CMH150DY-24NFH CMH 300DU-24NFH CMH 600DU-24NFH
108 Tc measured point 110
94 7.5 93±0.25 7.5 (8.5) 93±0.25 (8.5)
17 23 23 17 14 14 14

(9)
4

17.5 6 15 6
17.5 6 15 6

62±0.25
48±0.25

80
62
48
13

18

8.85 8.25
25.7

9.25 (10)
18

(22.2)
4

18.25
7

12 12 12 3-M5 NUTS

(9)
25 25 21.5 2.5
80±0.25 4-φ6.5 MOUTING 14 14 14
3-M6 NUTS
HOLES
4-φ6.5 MOUNTING HOLES 25 25 21.5
2-φ6.5MOUNTING HOLES 3-M6 NUTS

4 TAB#110,
TAB#110, t=0.5
16 7 16 7 16 t=0.5 18 7 18 7 18 2.8
18 7 18 7 18 TAB#110. t=0.5
7.5
8.5
21.2 7.5

29 –0.5

21.2 8.5
+1

LABEL
+1.0
29 –0.5

+1.0
29 –0.5
22

LABEL LABEL
4

Large Hybrid SiC DIPIPMTM 1700V/1200A Hybrid/Full SiC DIPPFCTM

for PV Application Hybrid SiC Power Modules for Home Appliances
PSH50YA2A6 for Tranction Inverters PSH20L91A6-A / PSF20L91A6-A
CMH1200DC-34S
A = 2.54±0.3
B = 5.08±0.3 38±0.5
20x1.778(-35.56)
B B B B B (2.54×10) 0.28 35±0.3
A A 2.54±0.3
A A
A
A
A B 2.8 1.778±0.2 14-0.5
130±0.5 1
57±0.25 57±0.25 4-M8 NUTS
(1)

18 1
1 12 13 18 19 29
23 4 56 7 8 9 1011 14 15 1617 20
41 42
(2.2)

30
31
20±0.1

Type name , Lot No. 32

2-ø4.5±0.2
31±0.5

24±0.5

4 2 Type name
6
1.
124±0.25

R
140±0.5

2-
30±0.2

Lot No.
12
12.7

33
40 34 3MIN
3 1
18 25 4-C1.2
0.28
10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 8-0.6
2.54±0.2
70 ±0.3 14x2.54(-35.56)
79 ±0.5 6-M4 NUTS 16±0.2 18±0.2 6-φ7 MOUNTING 0.45 0.45 0.45
40±0.2 44±0.2 HOLES
0.45 0.2
2.7 53±0.2 57±0.2 SCREWING
SCREWING
1.8 0.8 DEPTH 55.2±0.3 DEPTH 0.25
2 11.85±0.2 MIN. 16.5
MIN. 7.7
14±0.5
38 -0
+1
5±0.2
16

5.5±0.5
8.6

HEAT SINK SIDE

Terminology
SiC Silicon Carbide FWD-SW Diode switching loss
IPM Intelligent Power Module FWD-DC Diode DC loss
DIPIPM Dual-In-Line Package Intelligent Power Module Tr-SW Transistor switching loss
DIPPFC Dual-In-Line Package Power Factor Correction Tr-DC Transistor DC loss
SBD Schottky Barrier Diode IGBT-SW IGBT switching loss
MOSFET Metal Oxide Semiconductor Field Effect Transistor IGBT-DC IGBT DC loss
IGBT Insulated Gate Bipolar Transistor PV Photovoltaics
Tr Transistor CSTBT Mitsubishi Electric’s unique IGBT that makes
use of the carrier cumulative effect

8
 Development of Mitsubishi Electric SiC Power Devices
and Power Electronics Equipment Incorporating Them
Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics,
we succeeded in developing various elemental technologies.
In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device.
Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery.
We will continue to provide competitive SiC power modules with advanced development and achievements from now on.

2011
January 2011

2010
Verified highest power
conversion efficiency＊1 for solar
power generation system
January 2010 power conditioner
Developed large-capacity (domestic industry)
power module equipped
with SiC diode

Early 1990s
Developed new material,
October 2011
Commercialized SiC inverter
silicon-carbide (SiC) power for use in railcars
semiconductor, maintaining
a lead over other companies
October 2010
Launched "Kirigamine"
inverter air conditioner

2000s
Various elemental technologies
developed

2006
January 2006 2009 2012
Successfully developed March 2012
February 2009
SiC inverter for driving motor Verified 11kW SiC inverter, Developed motor system
rated at 3.7kW world's highest value＊1 with with built-in SiC inverter＊2
approx. 70% reduction
in power loss

September 2012
November 2009 Verified built-in main circuit
Verified 20kW SiC inverter, system for railcars
world's highest value＊1 with
approx. 90% reduction
in power loss

Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI)
9 and New Energy and Industrial Technology Development Organization (NEDO).

2014
February 2014
Developed EV motor
drive system with
built-in SiC inverter＊2
Contributing to the realization
May 2014
of a low-carbon society and
more affluent lifestyles
Began shipping samples
of hybrid SiC power modules
for high-frequency
switching applications

November 2014
Launch Large Hybrid SiC DIPIPMTM
for PV Application

2015
January 2015
Launched power conditioner
for PV equipped
with full SiC-IPM

2013 February 2013

February 2013 Developed technologies
Developed SiC for to increase capacities of
application in elevator SiC power modules＊2
control systems＊2

May 2013 December 2013

July 2012 March 2013 Launched SiC power Launched railcar traction inverter
Delivered auxiliary power
Began shipping samples supply systems for railcars
modules with full SiC power module
of hybrid SiC
power modules

December 2012
Launched CNC drive unit
equipped with SiC power module

＊1 Researched on press releases by Mitsubishi Electric. ＊2 Currently under development, as of May 2015.
* The year and month listed are based on press releases or information released during the product launch month in Japan. 10
SiC POWER MODULES

Please visit our website for further details.

www.MitsubishiElectric.com

Revised publication, effective May 2015.

Superseding publication of HG-802B Sep. 2014.
Specifications subject to change without notice.

HG-802B 2015