Exe 3

MiMic
Photolithography Lab

Ex3
Design a microfluidic platform to trap cells and culture aggregates in squared chambers [3].
You must use a NEGATIVE PHOTORESIST (see SU8 µ-series DataSheet). The Mask Aligner is
equipped with a 1000 W mercury arc lamp and it filters light selecting the wavelenghts in the
i-line region (1% of the total power). Furthermore the optical path of the instrument
decreases to the 50% the light irradiating a 6’’ surface.
Top View Lateral View SU8
SU8 Channel: Chambers:
L= 10mm L= 50µm
Channel w= 50µm w= 50µm
Chambers h1= 30µm h2= 150µm
Y z
Fat
x x

• Draw the mask (transparent/black parts)

Write the protocol to produce the wafer
with all the parameters 40x
Phase contrast image (sx) and Immunofluorescence
image (dx) of the resulting microaggregates cultured
within the chambers

3,Occhetta, P., et al., High-Throughput Microfluidic Platform for 3D Cultures of Mesenchymal Stem Cells, Towards Engineering Developmental Processes. Sci Rep, 2015. 5: p. 10288.

R.
VISONE
Exe 3
Top View Lateral View SU8 Channel: Chambers:
SU8 L= 10mm L= 50µm
w= 50µm w= 50µm
h1= 30µm h2= 150µm
Channel
Chambers
Y Ꙍ lamp= 1000 W
z
i-line → 1% pass
x x Optics → decreases 50%
Irradiates surface = 6’’

• Draw the mask (transparent/black parts)

• Write the protocol to produce the wafer with all the parameters
inlet outlet

cells
SU8

SU8
Wafer aggregates
PDMS
Draw the mask
B- Chambers
A- Channel
Mask Mask

SU8 SU8

Wafer Wafer
z
y

Y Y
x x
Alignment Signs

Y Y

x x
SU8
SU8

PROTOCOL TO PRODUCE THE WAFER

Speed
SU8 (rpm) Sb Exp Pb Dev
(65°-95°-65°) (time) (65°-95°-65°) (Time)

1st h=30um 2500 1’30’’-5’30’’-1’30’

u 25 A 1’-5’30’’-1’ /
channel 5.29 sec
h=180um
2nd h=150um u 200 2500 5’-30’-5’ B 5’-12’-5’
9.48 sec 15’ 48’’
chambers
Recommended Program:
- Spin at 500rpm for 10 sec with an acceleration of 100 rpm/sec (1st ramp)
- Spin at desired ω for 30 sec with an acceleration of 300 rpm/sec (2nd ramp)

A → Exposure energy: 145 mJ/cm2

Lamp irradiance on the wafer
1000 w 1000 w x 0.01 = 10 w 10 w 10 w x 0.5 = 5 w = power light
i-line optics hitting wafer

The surface irradiated by the lamp is 6’’ = diameter → 15.24 cm

A= r2 x 3.14= 182.3 cm2

Light irradiance → 5w/182.3 cm2 = 0.0274 w/ cm2 = 27.4 mW/cm2

Time= dose/light irradiance= 145 mJ/cm2 /27.4 mW/cm2 = 5.29 sec

B → Exposure energy: 260 mJ/cm2 Time= dose/light irradiance= 260 mJ/cm2 /27.4 mW/cm2 = 9.48 sec
 MiMic
Photolithography Lab

Ex4
To obtain some patterns on a silicon wafer (thickness 180µm) using a POSITIVE PHOTORESIST,
an anisotropic wet etching was performed through KOH. The chemical agent acted on silicon
surface (top surface 100) for 4h and the reaction took place at 1 µm/min. The mask used to
generate the patter had the following features:
100µm

• Sketch the obtained profile on the wafer

1cm (lateral view) with the correct feature
dimensions

Y
x 300µm

R. VISONE
Exe 4
R reaction= 1 µm/min

Treaction= 4 hours

Etching 100 surface with KOH

Wafer thickness = 180 µm

• Sketch the obtained profile on the wafer (lateral view)

with the correct feature dimensions

300 µm 100 µm mask

a a d AZ
Ѳ Ѳ 111
Ѳ
e
100 b f
c
110 wafer
Ѳ= 54.7°
Total etchable thickness= R x Time = 1um/min x (4x60)min = 240um > 180 um thick wafer

a=150um
b= a tg(Ѳ) = 150um tg(54.7) = 150 1.41=211.5 um > 180 um  hole

d=50um
e= d tg (Ѳ) = 50 1.41 = 70.5um < 180um thick  a self limited structure

111

100

110
 MiMic
Photolithography Lab

Ex5
Design the mask to obtain the following patterns on a silicon wafer by means of wet isotropic
etching. The etchant is the HF that has a R=2µm/min.

200µm
30µm • Define the time of the reaction
• Draw and size the mask

z wafer
x

R.
VISONE
Exe 5
Wet Isotropic etching (HF)
200µm
30µm R=2µm/min.

• Define the time of the reaction

z wafer • Draw and size the mask
x

Time= etched thickness / R = 30um / (2um/min) = 15 min

mask
140um

x
AZ
30um 30um
30um

z wafer
x
X= 200um – (30 x 2) = 140um
Exe 6
You want to generate QUAKE MICROVALVES with:
CTRL layer → hctrl= 25 µm
Separating membrane → 10µm
FLOW layer → hflow= 18 µm
Consider the provided spinning curve of PDMS (20:1)

• Design the process to have PUSH-UP and PUSH-DOWN valves

Push-up valves Push-down valves

• PUSH-UP valves
CTRL layer = bottom = spin coat PDMS (20:1) Bake 30 minutes
Spin coat thickness = 25um + 10um = 35um
Velocity: 2650 rpm

Flow layer = top = pour PDMS (5:1) Bake 20 minutes

Detach from the master to be aligned on the CTRL layer → shrink of PDMS  Scaled the CAD
1.7%
• PUSH-DOWN valves
Flow layer = bottom = spin coat PDMS (20:1) Bake 30 minutes
Spin coat thickness = 18um + 10 um =28 um
Velocity: 3200 rpm

CTRL = top = pour PDMS (5:1) Bake 20 min

Detach from the master to be aligned on the CTRL layer → shrink of PDMS  Scaled the CAD
1.7%
Recommended Program:
- Spin at 500rpm for 10 sec with an acceleration of 100 rpm/sec (1st ramp)
- Spin at desired ω for 30 sec with an acceleration of 300 rpm/sec (2nd ramp)
 rpm thikness (µm)
1900 52,5
2000 49,3
2100 46,5
2200 44,0
2300 41,7
2400 39,6
2500 37,7
2600 35,9
2650 35,0
2700 34,3
2800 32,8
2900 31,5
3000 30,2
3100 29,0
3200 28,0
3300 26,9
3400 26,0
3500 25,1
3600 24,2
3700 23,4
3800 22,7
3900 22,0
4000 21,3
4100 20,7
rpm thikness (µm)4200 20,1
1900 52,5
4300 19,5
2000 49,3
4400 19,0
2100 46,5
4500 18,5
2200 44,0
4600 18,0
2300 41,7
4700 17,5
2400 39,6
4800 17,1
2500 37,7
4900 16,7
2600 35,9
5000 16,3
2650 35,0
5100 15,9
2700 34,3
5200 15,5
2800 32,8
5300 15,2
2900 31,5
5400 14,8
3000 30,2
5500 14,5
3100 29,0
5600 14,2
3200 28,0
5700 13,9
3300 26,9
5800 13,6
3400 26,0
5900 13,3
3500 25,1
6000 13,1
3600 24,2
6100 12,8
3700 23,4
6200 12,6
3800 22,7
6300 12,3
3900 22,0
6400 12,1
4000 21,3
6500 11,9
4100 20,7
6600 11,6
4200 20,1
6700 11,4
4300 19,5
6800 11,2
4400 19,0
6900 11,0
4500 18,5
4600 18,0
4700 17,5
Recommended
4800
Program:
17,1
- Spin
4900 at 500rpm 16,7 for 10 sec with an acceleration of 100 rpm/sec (1st ramp)
5000 16,3
- Spin at desired ω for 30 sec with an acceleration of 300 rpm/sec (2nd ramp)
5100 15,9
5200 15,5