Fuji Discrete Package IGBT n Outline Drawing

n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)

Items Symbols Ratings Units
Collector-Emitter Voltage VCES 1200 V
Gate -Emitter Voltage VGES ± 20 V
DC Tc= 25°C IC 25 16
Collector Current DC Tc=100°C IC 100 10 A
1ms Tc= 25°C IC PULSE 48
IGBT Max. Power Dissipation PC 135 W
FWD Max. Power Dissipation PC 85 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +150 °C
Mounting Screw Torque 50 Nm

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=1200V 1.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 20 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=10mA 5.5 8.5
V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=10A 3.5
Input capacitance Cies VGE=0V 1200
Output capacitance Coes VCE=10V 250 pF
Reverse Transfer capacitance Cres f=1MHz 80
tON VCC=600V 1.2
Turn-on Time
tr IC=10A 0.6 µs
tOFF VGE=±15V 1.5
Turn-off Time
Switching Time tf RG=160Ω 0.5
tON VCC=600V 0.16
Turn-on Time
tr IC=10A 0.11
µs
tOFF VGE=+15V 0.30
Turn-off Time
tf RG=16Ω 0.5
Diode Forward On-Voltage VF IF=10A VGE=0V 3.0 V
Reverse Recovery Time trr IF=10A, VGE=-10V, di/dt=100A/µs 350 ns

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.92
Thermal Resistance °C/W
Rth(j-c) Diode 1.47
 Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
25 25

V GE = 2 0 V , 1 5 V 1 2 V V GE = 2 0 V , 1 5 V 12V
20 20
[A]

[A]
C

C
15 15
Collector Current : I

Collector Current : I
10V
10 10
10V

5 5

8V
8V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage : V CE [V]

Collector-Emitter Voltage vs. Gate-Emitter Voltage Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
12 12
[V]

[V]

10 10
CE

CE

8 8
Collector-Emitter Voltage : V

Collector-Emitter Voltage : V

6 6

4 IC = 4
I C=
20A
20A
10A
10A
2 5A 2
5A

0 0
0 5 10 15 20 25 0 5 10 15 20 25

Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V]

Switching Time vs. Collector Current Switching Time vs. Collector Current
V CC = 6 0 0 V , R G = 1 6 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 6 0 0 V , R G= 1 6 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C

1000 t off
1000
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]

t off
tf
tf
on
on

t on
Switching Time : t

Switching Time : t

t on
100
100

tr tr

0 5 10 15 20 0 5 10 15 20

Collector Current : I C [A] Collector Current : I C [A]

 Switching Time vs. R G Switching Time vs. R G
V CC =600V, I C = 1 0 A , V GE = ± 1 5 V , T j= 2 5 ° C V CC =600V, I C = 1 0 A , V GE = ± 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]
1000

t off
1000

t off tf
on

on
Switching Time : t

Switching Time : t
tf
t on

t on
tr
100
tr

100
10 100 10 100

Gate Resistance : R G [ Ω ] Gate Resistance : R G [ Ω ]

Capacitance vs. Collector-Emitter Voltage Dynamic Input Characteristics

T j= 2 5 ° C T j= 2 5 ° C
1000 25
VCC=
400V
600V
800V
1000 C ies
[V]

800 20
, C res , C ies [pF]

[V]
CE

GE
Collector-Emitter Voltage : V

Gate-Emitter Voltage : V
600 15
C oes
100
oes
Capacitance : C

C res 400 10

10
200 5

1 0 0
0 5 10 15 20 25 30 35 0 20 40 60 80 100 120 140 160 180
G a t e C h a r g e : Q G [nQ]

Reverse Recovery Time vs. Forward Current Reverse Recovery Current vs. Forward Current
-di -di
V R= 2 0 0 V , / dt = 1 0 0 A / µ s e c V R= 2 0 0 V , / dt= 1 0 0 A / µ s e c
200 10

125°C
[nsec]

[A]

125°C 8
150
rr
rr

Reverse Recovery Current : I

Reverse Recovery Time : t

6
25°C 25°C
100

50
2

0 0
0 5 10 15 0 5 10 15

Forward Current : I F [A] Forward Current : I F [A]

 Reverse Biased Safe Operating Area Typical Short Circuit Capability

+ V GE= 1 5 V , - V GE <1 5 V , T j< 1 2 5 ° C , R G > 1 6 Ω V CC = 8 0 0 V , R G = 1 6 Ω , T j= 1 2 5 ° C

25 200 80

20

[A]
150 60

[µs]
t SC I SC

SC
[A]

SC
C

Short Circuit Current : I

15

Short Circuit Time : t

Collector Current : I

100 40

10

50 20
5

0 0 0
0 200 400 600 800 1000 1200 1400 5 10 15 20 25
Gate Voltage : V GE [V]
Collector-Emitter Voltage : V CE [V]

-di
Reverse Recovery Characteristics vs. / dt
Forward Voltage vs. Forward Current
I F = 1 0 A , T j= 1 2 5 ° C
25 300 30

T j= 1 2 5 ° C 2 5 ° C
250 25
[nsec]

20

[A] rr
[A]

rr

200 20

Reverse Recovery Current : I

Reverse Recovery Time : t
F

15 I rr
Forward Current : I

150 15

10
100 10
t rr

5
50 5

0 0 0
0 1 2 3 4 0 100 200 300 400 500 600
-di
Forward Voltage : V F [V] / dt [A/µsec]

Transient Thermal Resistance

Thermal Resistance : Rth(j-c) [°C/W]

1
10

FWD

0
10

IGBT

-1
10

-2
10
-4 -3 -2 -1 0
10 10 10 10 10

Pulse Width : P W [sec]

 Switching losses
(Eon, Eoff vs. IC)

IC [A]

Test Circuit Switching waveforms

P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com
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