40822

MOS FIELD-EFFECT TRANSISTOR

DESCRIPTION:
The ASI 40822 is a N-Channel Dual-
Gate Depletion Type Transistor With PACKAGE STYLE TO-72
Monolithic Gate Protection Diodes,
used in RF,IF Amplifier and Mixer
Applications up to 150 MHz.

MAXIMUM RATINGS
ID 50 mA
VD 24 V
PDISS 330 mW @ TA = 25 OC
TJ -65 OC to +175 OC
1 = Drain 2 = Gate #2
TSTG -65 OC to +175 OC 3 = Gate #1 4 = Source, Case, and Substrate

CHARACTERISTICS O
TA = 25 C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
VG1S(OFF) VDS = 15 V VG2S = 4.0 V ID = 50 µA -2.0 -4.0 V
VG2S(OFF) VDS = 15 V VG1S = 0 V ID = 50 µA -2.0 -4.0 V
IG1SSF VG1S = 6.0 V VG2S = VDS = 0 V 50 µA
IG1SSR VG1S = -6.0 V VG2S = VDS = 0 V 50 µA
IG2SSF VG2S = 6.0 V VG1S = VDS = 0 V 50 µA
IG2SSR VG2S = -6.0 V VG1S = VDS = 0 V 50 µA
IDS VDS = 15 V VG1S = 0 V VG2S = 4.0 V 5.0 15 30 mA
V(BR)G1 IG1 = ±100 µA 9.0 V
V(BR)G2 IG2 = ±100 µA 9.0 V

gfs VDS = 15 V VG2S = 4.0 V ID = 10 mA 12000 µmho

f = 1.0 KHz
Crss VDS = 15 V VG2S = 4.0 V ID = 10 mA 0.005 0.03
Ciss 6.5 9.5 pF
f = 1.0 MHz
Coss 2.0
GPS VDS = 15 V VG2S = 4.0 V ID = 10 mA f 19 24 dB
NF = 200 MHz 2.0 3.5

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1

Specifications are subject to change without