TMD8N60AZ(G)/TMU8N60AZ(G)

Features N-channel MOSFET

 Low gate charge BVDSS ID RDS(on)
 100% avalanche tested
600V 7.5A <1.2W
 Improved dv/dt capability
 RoHS compliant
 Halogen free package
 JEDEC Qualification
 Improved ESD performance

D-PAK
I-PAK

Device Package Marking Remark

TMD8N60AZ / TMU8N60AZ D-PAK/I-PAK TMD8N60AZ / TMU8N60AZ RoHS
TMD8N60AZG / TMU8N60AZG D-PAK/I-PAK TMD8N60AZG / TMU8N60AZG Halogen Free

Absolute Maximum Ratings

Parameter Symbol TMD8N60AZ(G)/TMU8N60AZ(G) Unit
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGS ±30 V
TC = 25 ℃ 7.5 A
Continuous Drain Current ID
TC = 100 ℃ 4.12 A
Pulsed Drain Current (Note 1) IDM 30 A
Single Pulse Avalanche Energy (Note 2) EAS 223 mJ
Repetitive Avalanche Current (Note 1) IAR 7.5 A
Repetitive Avalanche Energy (Note 1) EAR 12 mJ
TC = 25 ℃ 120 W
Power Dissipation PD
Derate above 25 ℃ 0.96 W/℃
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 ℃
Maximum lead temperature for soldering purposes,
TL 300 ℃
1/8” from case for 5 seconds
* Limited only by maximum junction temperature

Thermal Characteristics
Parameter Symbol TMD8N60AZ(G)/TMU8N60AZ(G) Unit
Maximum Thermal resistance, Junction-to-Case RqJC 1.04 ℃/W
Maximum Thermal resistance, Junction-to-Ambient RqJA 110 ℃/W

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Electrical Characteristics : TC=25℃, unless otherwise noted

Parameter Symbol Test condition Min Typ Max Units

OFF
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V
VDS = 600 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current IDSS
VDS = 480 V, TC = 125°C -- -- 10 µA
Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA
Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA

ON
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3 -- 5 V
Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 3.75 A -- 1.0 1.2 W
(Note 4)
Forward Transconductance gFS VDS = 30 V, ID = 3.75 A -- 9 -- S

DYNAMIC
Input Capacitance Ciss VDS = 25 V, VGS = 0 V, -- 1063 -- pF
Output Capacitance Coss f = 1.0 MHz -- 105 -- pF
Reverse Transfer Capacitance Crss -- 13 -- pF

SWITCHING
Turn-On Delay Time (Note 4,5) td(on) VDD = 300 V, ID = 7.5 A, -- 27 -- ns
(Note 4,5)
Turn-On Rise Time tr RG = 25 Ω -- 33 -- ns
(Note 4,5)
Turn-Off Delay Time td(off) -- 85 -- ns
Turn-Off Fall Time (Note 4,5) tf -- 25 -- ns
(Note 4,5)
Total Gate Charge Qg VDS = 480V, ID = 7.5 A, -- 23 -- nC
(Note 4,5)
Gate-Source Charge Qgs VGS = 10 V -- 5 -- nC
(Note 4,5)
Gate-Drain Charge Qgd -- 10 -- nC

SOURCE DRAIN DIODE

Maximum Continuous Drain-Source
IS ---- -- -- 7.5 A
Diode Forward Current
Maximum Pulsed Drain-Source
ISM ---- -- -- 30 A
Diode Forward Current
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7.5 A -- -- 1.5 V
(Note 4)
Reverse Recovery Time trr VGS = 0 V, IS = 7.5 A -- 352 -- ns
(Note 4)
Reverse Recovery Charge Qrr dIF / dt = 100 A/µs -- 2.6 -- µC

Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=7.29mH, I AS = 7.5A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃
3 I SD ≤ 7.5A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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15
VDS = 30V
Top VGS=15.0V 250 μs Pulse Test
10.0V
12 9.0V 10
8.0V
7.0V
150℃

Drain Current, ID [A]

6.0V
Drain Current, ID [A]

Bottom 5.5V
9

25℃
-55℃
6 1

1. TC = 25℃
2. 250μs Pulse Test
0 0.1
0 5 10 15 20 2 4 6 8 10
Drain-Source Voltage, VDS [V] Gate-Source Voltage, VGS [V]

2.0 30
VGS = 0V
TJ = 25℃
250μs Pulse Test
Reverse Drain Current, IDR [A]

25
Drain-Source On-Resistance

1.5 20
VGS = 10V
RDS(ON) [Ω]

150℃ 25℃
15

VGS = 20V
1.0 10

0.5 0
0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0
Drain Current,ID [A] Source-Drain Voltage, VSD [V]

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd ID = 7.5A
Crss = Cgd VDS = 300V
10
Gate-Source Voltage, VGS [V]

1500 VGS = 0 V
f = 1 MHz VDS = 120V
Ciss 8
Capacitance [pF]

1000 6 VDS = 480V

Coss

500 Crss
2

0 0
-1 0 1
10 10 10 0 5 10 15 20 25 30
Drain-Source Voltage, VDS [V] Total Gate Charge, QG [nC]

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 TMD8N60AZ(G)/TMU8N60AZ(G)

1.20 3.0

VGS = 10 V
VGS = 0 V
1.15
Drain-Source Breakdown Voltage

ID = 3.75 A
ID = 250 μA
2.5

Drain-Source On-Resistance
1.10
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0
1.05

1.00 1.5

0.95
1.0

0.90

0.5
0.85

0.80 0.0
-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160
o o
Junction Temperature,TJ [ C] Junction Temperature, TJ [ C]

8 1.5

6
Gate Threshold Voltage
Drain Current, ID [A]

VTH, (Normalized)

1.0

0.5

VDS = VGS
ID = 250  A

0 0.0
25 50 75 100 125 150 -80 -40 0 40 80 120 160
Case Temperature, TC [℃] o
Junction Temperature, TJ [ C]

2
10
Operation in This Area
is Limited by R DS(on)
10 us

0
100 us
10 1
Transient thermal impedance

10
Duty=0.5 1 ms
Drain Current, ID [A]

10 ms
0.2
100 ms
0.1 10
0
DC
ZthJC(t)

-1
10 0.05 PDM
t
0.02
T o
-1
TC = 25 C
0.01 10 o
single pulse TJ = 150 C
Duty = t/T
ZthJC(t) = 1.04℃/W Max. Single Pulse
-2
10

-2
-5 -4 -3 -2 -1 0 1
10
0 1 2 3
10 10 10 10 10 10 10 10 10 10 10
Pulse Width, t [sec] Drain-Source Voltage, VDS [V]

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TO-252 (D-PAK) MECHANICAL DATA

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 TMD8N60AZ(G)/TMU8N60AZ(G)

TO-251 (I-PAK) MECHANICAL DATA

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