Ministry Of Higher Education

Northern Technical University

Technical College /Mosul
Department Of Computer Engineering

MOSFET
Huda Mohammed
Stage 3 rd

EDITION ONE

SUPERVISED BY
Dr. LAITH AKRAM

1440 2020
 Contents

Subject Page No.

Abstract 1

Introduction 1

Transconductance Curve 2

Drain Curves 3

Testing MOSFET 3

Instruments Used 3

Components Used 3

Experimental Procedure 3

Trans conductance curve 4

.Display of drain curves on CRO 7

Results 9

Discussion 9

REFERENCES 9
Abstract
Using 3N200 enhancement P channel MOSFET the transconductances and drain
curves are determined. From these curves, transcendences, ac drain resistance and
amplification factors are determined. The drain curves are displayed on CRO using a sweep
circuit.

Introduction
A metal oxide semiconductor field effect transistor (MOSFET) is a semiconductor device
similar to junction field effect transistor (JFET). JFET is the result of the search for high
input resistance transistor and MOSFET is result of bipolar gate bias. MOSFET can
respond to either to positive gate voltage or to negative gate voltage. The major structural
design change between the JFET and the MOSFET is insulating SiO2 layer between the
gate and the conducting channel. This insulating layer gives very high input resistance to
the device. There is no electrical connection between the gate and the conducting channel.
The electric field controls the device current.

The current flow between the source and drain terminals is controlled by gate source
voltage VGS applied between the gate and source. If the gate source voltage is below a
threshold voltage VTH the MOSFET does not conduct or the device is off. When VgS is
greater than the threshold voltage then drain current flows. The threshold voltage is positive
for n-channel MOSFET and it is negative for p-channel MOSFET. All the equations of
JFET hold good for MOSFET with pinch-off voltage replaced by threshold voltage in
MOSFET [1].

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 A negative gate potential results in depletion mode of operation and positive gate
potential results in enhancement mode of operation. By design, change it is possible make
MOSFET operate any one of these modes [2]. Few MOSFETS are also available with dual
gate useful for cascading purpose. MOSFET 3N200 is one such device

3N200 is a dual gate p channel enhancement MOSFET for small signal application.
It can be also operated in the depletion mode with very low gate voltage less than one volt.
However, it is generally meant for enhancement mode of operation. Figure-1 shows the b

Transconductance Curve

A graph of drain current versus gate-source voltage at constant drain-source voltage

is known as transconductance curve. Threshold voltage of MOSFET is the gate-source that
makes the drain current zero. Below threshold voltage, the MOSFET is off and above
threshold voltage the MOSFET is on. This is the switching characteristic of the MOSFET.

The drain current is given by

All the equations that control the conduction in JFET also control MOSFET.
Equation -1 represents the transconductance curve of a MOSFET. The transconductance at
zero gate-source voltage is given by

2
Drain Curves

The drain curves or the output curves are the set of curves obtained by experiment, which
relate the drain current with drain-source voltage for different gate-source voltages. Drain
curves are also known as output curves.

Testing MOSFET

MOSFET is a delicate semiconductor device because of its insulating layer SiO2.

For lab experiments, it is better you test before using it. After identification of its terminals,
a DMM is used to measure resistance across drain and source terminals. In either polarity
of the DMM the drain, source resistance for MOSFET is of the order of 100-150 ohms.
The resistance between gate- source and gate- drain must be infinity in either polarity. In
case of SiO2 layer breakage, the gate-drain and gate-source resistance is not infinity.

Instruments Used

Dual power supply with 0 to ±5V variable, 0-15V/0.2A variable power supplies,
digital dc milliammeter 0-200mA/0-20 mA dual range, digital dc voltmeter 0-2V/0-20V
dual range.

Components Used

MOSFET 3N200, resistor 100Q/2W, heat sink for mosfet in the form of aluminum plate
(1”x1”)

Optional Components for displaying output curve on CRO

DAC0808, 74LS193,LF356, resistors 100K, 5.6K, trim pots 1K, 10K, capcitors 0.1pF.

Experimental Procedure

The experiment consists of three parts

Part A, Transconductance curve

Part B, Drain curves

Part C, display of drain curve on CRO.

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Part A, Transconductance curve

1. The heat sink is fitted to the body of the MOSFET. The circuit is rigged as shown in
Figure-

2. VDD power supply is 0-15V variable and VGG power supply is 0 to ±5V variable. Positive
and negative voltages are selected by a toggle switch of the power supply unit. (DCP201
model of KamalJeeth Make).

Figure-2, Circuit connections for MOSFET characteristics

(Note: A crocodile clip also can be used as heat sink in place of aluminum plate. For
trials below +2volts VGS, there is no need of heat sink. With heat sink the decrease in the
drain current in the saturation region can be reduced.)

2. The resistance in Figure-2 is a protective resistance. For transconductance curve it is not

required. Vdd is directly connected to the digital milliameter voltmeter junction.

3. The drain- source voltage Vds is set to 4 volts by adjusting Vdd power supply.

4. The gate-source voltage Vgs is set to zero. The milliammeter reads drain current. This
drain current is Idss = 3.8mA.

5.The Vgg supply is set to 0 to -5V position. Vgs is varied closely watching the decrease in
the drain current. The drain current becomes zero at certain voltage. This Vgs is measured
and it is the threshold voltage.

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5
6. Further Vgs is increased in the forward direction in steps of 0.25volts and the
corresponding drain current is noted in Table-1.

7. Trial is repeated by varying Vgs in suitable steps up to a maximum of +4 volts.

Corresponding drain current is noted in Table-1.

8. A transconductance curve is drawn taking gate-source voltage on X-axis and drain

current on Y-axis as shown in Figure-3. It is observed that the experimental and theoretical
value differ very much. May be because the equation is a lending from JFET.

Drain Curves

9. The resistance in the circuit is now included. Both the voltage sources are set to zero.
The VGG supply is set 0 to -5Vrange and VGS is set to - 0.5V.

10. VDS is slowly increased in steps of 0.25Volts up to a maximum of 2 volts. In each

case, the drain current is noted in Table-2. Further VDS is increased in steps of 1 volt up
to a maximum of 10 volts and the corresponding drain current is noted.

11. Trial is repeated by varying VGS to 0, +2, +3,and +4volts. In each case VDS is
varied from 0 to 10 volts and the drain, current is noted in Table-2.

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12. A graph is drawn talking drain-source voltage along X-axis and drain current along
Y-axis. The graph is shown in Figure-4. The slope of the graph is determined and ac
drain resistance is calculated and presented in Table-3. AC drain resistance for Vgs= -
0.5V is

13. The amplification factor p=gmrd is also calculated and presented in Table-3.

Part C, Display of drain curves on CRO.

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Figure-5 shows circuit arrangement to displaying drain curves on CRO. The gate of the
MOSFET is fed with staircase wave, which remains in one voltage state for one
millisecond. During this one millisecond the drain voltage, vary from 0 to 10 volts in either
way. This sweep of drain voltage results in one curve. When step input attains its next step
voltage again the drain voltage sweep and second curve is obtained. The 16-step input
staircase waveform resulted in 16 drain curves. Figure-6 shows the drain curves. By
disconnecting pin 9 of the DAC from counter resulted in eight drain curves. TP2 in Figure-
5, is the offset adjustment for the triangular wave. The triangular waveform has lower 0
volt level and upper 20V level

V
o

Figure-5, Sweep generator circuit used to display drain curve on CRO.

(For circuit detail refer experiment-76)

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Results

The results obtained are tabulated in Table-4

Discussions

MOSFET has similar characteristics compared to JFET with -ve gate voltage
replaced by positive gate voltage. Further, the current carrying capacity of the MOSFET is
high compared to JFET because there is no junction formation in MOSFET at the gate
terminal. The threshold voltage is negative which is indicates that for very low negative
voltage 3N200 can be operated either in enhancement or in the depletion mode.

The transconductance curve appeared to be quadratic rather than linear as per

theory. The equation governing the transconductance may not be accurate for MOSFET.
The amplification factor for low signal (for VGS < 2V) is large (100) compared to JFET.

References

[1] Jeethendra Kumar P K, JFET Characteristics, LE Vol-1, No-1, November-2001, Page

32.

[2] A P Malvino, Electronic principles, 3 Edn, Page-368.