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 FGH20N60UFD — 600 V, 20 A Field Stop IGBT
March 2015

FGH20N60UFD
600 V, 20 A Field Stop IGBT
Features General Description
• High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop
• Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 20 A IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
• High Input Impedance
ing losses are essential.
• Fast Switching
• RoHS Compliant

Applications
• Solar Inverter, UPS, Welder, PFC

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ±20
VGES V
Transient Gate-to-Emitter Voltage ±30
Collector Current @ TC = 25oC 40 A
IC
Collector Current @ TC = 100oC 20 A
ICM (1) Pulsed Collector Current @ TC = 25oC 60 A
o
Diode Forward Current @ TC = 25 C 20 A
IF
Diode Forward Current @ TC = 100oC 10 A
IFM (1) Pulsed Diode Maximum Forward Current 60 A
Maximum Power Dissipation @ TC = 25oC 165 W
PD
Maximum Power Dissipation @ TC = 100oC 66 W
o
TJ Operating Junction Temperature -55 to +150 C
oC
Tstg Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering oC
TL 300
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH20N60UFD Rev. 1.7
 FGH20N60UFD — 600 V, 20 A Field Stop IGBT
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH20N60UFDTU FGH20N60UFD TO-247 Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA 600 - - V
ΔBVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 μA - 0.6 - V/oC
/ ΔTJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 μA, VCE = VGE 4.0 5.0 6.5 V
IC = 20 A, VGE = 15 V - 1.8 2.4 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 20 A, VGE = 15 V,
- 2.0 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 940 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 110 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 40 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 13 - ns
tr Rise Time - 17 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 20 A, - 87 - ns
tf Fall Time RG = 10 Ω, VGE = 15 V, - 32 64 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 0.38 - mJ
Eoff Turn-Off Switching Loss - 0.26 - mJ
Ets Total Switching Loss - 0.64 - mJ
td(on) Turn-On Delay Time - 13 - ns
tr Rise Time - 16 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 20 A, - 92 - ns
tf Fall Time RG = 10 Ω, VGE = 15 V, - 63 - ns
Inductive Load, TC = 125oC
Eon Turn-On Switching Loss - 0.41 - mJ
Eoff Turn-Off Switching Loss - 0.36 - mJ
Ets Total Switching Loss - 0.77 - mJ
Qg Total Gate Charge - 63 - nC
VCE = 400 V, IC = 20 A,
Qge Gate to Emitter Charge - 7 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 32 - nC

©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH20N60UFD Rev. 1.7
 FGH20N60UFD — 600 V, 20 A Field Stop IGBT
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.76 oC/W

o
RθJC(Diode) Thermal Resistance, Junction to Case - 2.51 C/W
oC/W
RθJA Thermal Resistance, Junction to Ambient - 40

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

o
TC = 25 C - 1.9 2.5
VFM Diode Forward Voltage IF = 10 A V
TC = 125oC - 1.7 -
TC = 25oC - 34 -
trr Diode Reverse Recovery Time ns
TC = 125oC - 57 -
IF =10 A, diF/dt = 200 A/μs
TC = 25oC - 41 -
Qrr Diode Reverse Recovery Charge nC
TC = 125oC - 96 -

©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH20N60UFD Rev. 1.7
 FGH20N60UFD — 600 V, 20 A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

60 60
o o
TC = 25 C 20V TC = 125 C 20V 12V
12V
15V 15V 10V
10V
Collector Current, IC [A]

Collector Current, IC [A]

40 40

20 20 VGE = 8V
VGE = 8V

0 0
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
60 60
Common Emitter Common Emitter
VGE = 15V VCE = 20V
o o
TC = 25 C TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]

o o
TC = 125 C TC = 125 C
40 40

20 20

0 0
0 1 2 3 4 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.2 20
Common Emitter Common Emitter
VGE = 15V o
Collector-Emitter Voltage, VCE [V]

TC = -40 C
Collector-Emitter Voltage, VCE [V]

2.8
16
40A
2.4
12
2.0
20A
8
1.6
40A
IC = 10A
1.2 4 20A
IC = 10A
0.8 0
25 50 75 100 125 0 4 8 12 16 20
o
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH20N60UFD Rev. 1.7
 FGH20N60UFD — 600 V, 20 A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o o
Collector-Emitter Voltage, VCE [V]

TC = 25 C TC = 125 C

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

40A 20A
4 4 40A
20A

IC = 10A IC = 10A
0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

2500 15
Common Emitter Common Emitter
VGE = 0V, f = 1MHz o
TC = 25 C
Gate-Emitter Voltage, VGE [V]

o
2000 TC = 25 C 12
300V
Capacitance [pF]

1500 Cies VCC = 100V 200V

9

1000 6
Coes

500 Cres 3

0 0
0.1 1 10 30 0 20 40 60 80
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance
100 100
10μs

100μs
Collector Current, Ic [A]

10
Switching Time [ns]

1ms
10 ms
tr
1 DC

Common Emitter
Single Nonrepetitive td(on) VCC = 400V, VGE = 15V
0.1 Pulse TC = 25oC 10 IC = 20A
Curves must be derated o
TC = 25 C
linearly with increase o
in temperature TC = 125 C
0.01 5
1 10 100 1000 0 10 20 30 40 50 60
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω]

©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH20N60UFD Rev. 1.7
 FGH20N60UFD — 600 V, 20 A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000 200
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 10Ω
IC = 20A
100 o
TC = 25 C
o o
TC = 25 C TC = 125 C
Switching Time [ns]

Switching Time [ns]

o
TC = 125 C td(off)

tr
100

10 td(on)
tf

10 3
0 10 20 30 40 50 60 0 10 20 30 40
Gate Resistance, RG [Ω] Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
300 3
Common Emitter Common Emitter
VGE = 15V, RG = 10Ω VCC = 400V, VGE = 15V
o
TC = 25 C IC = 20A
o o
TC = 125 C TC = 25 C
Switching Loss [mJ]
Switching Time [ns]

1 o
TC = 125 C
100 td(off)
Eon

Eoff
tf

10 0.1
0 10 20 30 40 0 10 20 30 40 50 60
Collector Current, IC [A] Gate Resistance, RG [Ω]

Figure17. Switching Loss vs. Figure18. Turn off Switching

Collector Current SOA Characteristics
10 100
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
Collector Current, IC [A]

o Eon
TC = 125 C
Switching Loss [mJ]

10
Eoff

0.1

Safe Operating Area

o
VGE = 15V, TC = 125 C
0.02 1
0 10 20 30 40 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]

©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH20N60UFD Rev. 1.7
 FGH20N60UFD — 600 V, 20 A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Reverse Current

40 100
o
TJ = 125 C
o
o 10 TC = 125 C
10 TJ = 75 C

Reverse Current , IR [μA]

Forward Current, IF [A]

o
TJ = 25 C 1
o
TC = 75 C

0.1
1
o
TC = 25 C o
TC = 25 C
o
0.01
TC = 75 C
o
TC = 125 C
0.1 1E-3
0 1 2 3 4 0 100 200 300 400 500 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

0.05 60
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

200A/μs 50
0.04 di/dt = 100A/μs

40

0.03 di/dt = 100A/μs

30 200A/μs

0.02
20

0.01 10
0 5 10 15 20 0 5 10 15 20
Forward Current, IF [A] Forward Current, IF [A]

Figure 23.Transient Thermal Impedance of IGBT

1
0.5
Thermal Response [Zthjc]

0.2

0.1 0.1
0.05
0.02
0.01
0.01 PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH20N60UFD Rev. 1.7
 4.82
15.87
E 4.58
E B
15.37
A
4.13 12.81 E
3.53 6.85 3.65
E
6.61 3.51
0.254 M B A M

5.58
E 1.35
5.34
5.20 0.51
4.96
20.82
E 13.08 MIN
20.32

1 2 3 3 1
3.93 1.87
3.69
E 1.53 (2X) 16.25
E
15.75
1.60

2.77
2.43
0.71
5.56 0.51

1.35 2.66
1.17 2.29
0.254 M B A M
11.12

NOTES: UNLESS OTHERWISE SPECIFIED.

A. PACKAGE REFERENCE: JEDEC TO-247,

ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994

E DOES NOT COMPLY JEDEC STANDARD VALUE

F. DRAWING FILENAME: MKT-TO247A03_REV04
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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