® STTA506D/F/B

TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE

MAIN PRODUCTS CHARACTERISTICS

IF(AV) 5A K

VRRM 600V

trr (typ) 20ns

A A
VF (max) 1.5V K K

FEATURES AND BENEFITS

TO-220AC
STTA506D
ISOWATT220AC
STTA506F
s)
SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE
c t(
ULTRA-FAST AND SOFT RECOVERY
K

d u
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION r o
TRANSISTOR
e P NC
A

HIGH FREQUENCY OPERATIONS

INSULATED PACKAGE : ISOWATT220AC
le t DPAK
Electrical insulation : 2000VDC
Capacitance < 12 pF
s o STTA506B

DESCRIPTION
Ob
-
(s)
The TURBOSWITCH is a very high performance and is particularly suitable and efficient in motor
series of ultra-fast high voltage power diodes from control freewheel applications and in booster diode
600V to 1200V.
c t
TURBOSWITCH family, drastically cuts losses in
applications in power factor control circuitries.
Packaged either in TO-220AC, ISOWATT220AC

d u
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
or in DPAK, these 600V devices are particularly
intended for use on 240V domestic mains.

r o
P
ABSOLUTE RATINGS (limiting values)

e
Symbol
VRRM
l et Parameter
Repetitive peak reverse voltage
Value
600
Unit
V
o
bs
VRSM Non repetitive peak reverse voltage 600 V
IF(RMS) RMS forward current TO-220AC 20 A
O ISOWATT220AC
DPAK 10 A
IFRM Repetitive peak forward current tp=5µs F=5kHz square 65 A
IFSM Surge non repetitive forward current tp=10 ms sinusoidal 55 A
Tj Maximum operating junction temperature 150 °C
Tstg Storage temperature range -65 to 150 °C

TM : TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed : 3D 1/10

 STTA506D/F/B
THERMAL AND POWER DATA

Symbol Parameter Test conditions Value Unit

Rth(j-c) Junction to case TO-220AC / DPAK 3.5 °C/W
ISOWATT220AC 6.0
P1 Conduction power dissipation • TO-220AC / DPAK Tc= 118°C 9 W
IF(AV) = 5A δ =0.5 ISOWATT220AC Tc= 96°C
Pmax Total power dissipation TO-220AC / DPAK Tc= 115°C 10 W
Pmax = P1 + P3 (P3 = 10% P1) ISOWATT220AC Tc= 90°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions Min Typ Max Unit

VF * Forward voltage drop IF =5A Tj = 25°C 1.75 V
Tj = 125°C 1.25 1.5 V
IR ** Reverse leakage current VR =0.8 x Tj = 25°C 100 µA
VRRM Tj = 125°C 0.75 2 mA
Vto Threshold voltage Ip < 3.IAV Tj = 125°C 1.15
s
V)
t(
uc
rd Dynamic resistance 70 mΩ
Test pulse : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%

o d
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS) P r
e
DYNAMIC ELECTRICAL CHARACTERISTICS
o let
TURN-OFF SWITCHING
b s
Symbol Parameter
- O
Test conditions Min Typ Max Unit

(t s)
trr Reverse recovery Tj = 25°C ns
time IF = 0.5 A IR = 1A Irr = 0.25A 20

uc
IF = 1 A dIF/dt =-50A/µs VR =30V 50

IRM Maximum reverse

r
recovery current od Tj = 125°C VR = 400V
dIF/dt = -40 A/µs
IF =5A
3.0
A

e P dIF/dt = -500 A/µs 11

S factor
l et
Softness factor Tj = 125°C VR = 400V
dIF/dt = -500 A/µs
IF =5A
0.55
-

s o
O b
TURN-ON SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

tfr Forward recovery Tj = 25°C ns

time IF =5 A, dIF/dt = 40 A/µs 500
measured at 1.1 × VFmax

VFp Peak forward Tj = 25°C V

voltage IF =5A, dIF/dt = 40 A/µs 10

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 STTA506D/F/B
Fig. 1: Switching OFF losses versus dI/dt. Fig. 2: Forward voltage drop versus forward
current.
VFM(V)
3.00
P3(W) MAXIMUM VALUES
2.75
2.50 2.50
Tj=125°C
F = 10kHz
VR=600V
2.25
2.00
2.00
1.75 Tj=125 o C
1.50
1.50
1.00 1.25
1.00
0.50 0.75
dIF/dt(A/µs) 0.50
0.00 0.25
0 50 100 150 200 250 300 350 400 450 500 IFM(A)
0.00
0.1 1 10 100

Fig. 3: Peak reverse recovery current versus Fig. 4: Reverse recovery time versus dIF/dt.
s)
dIF/dt.

c t(
25.0
IRM(A)
90% CONFIDENCE Tj=125 oC
180
trr(ns)

d u
90% CONFIDENCE Tj=125 oC
22.5
20.0 VR=400V
160

r o
17.5
IF=10A 140
120
e P VR=400V

15.0
12.5 IF=5A
100

le t
10.0
80
60
s o IF=5A IF=10A

b
7.5 IF=2.5A
40

O
5.0 IF=2.5A

2.5
0.0
dIF/dt(A/ s)

) - 20
0
dIF/dt(A/ s)
0
s
100 200 300 400 500 600 700 800 900 1000

(
0 100 200 300 400 500 600 700 800 900 1000

u ct
o d
Fig. 5: Softness factor (tb/ta) versus dIF/dt. Fig. 6: Relative variation of dynamic parameters
versus junction temperature (reference Tj = 125°C).

Pr
S factor

et e
l
2.0 1.5

o
Typical values Tj=125 oC
1.8 1.4

bs
1.6 IF<2xIF(av) 1.3
1.4 VR=400V 1.2 S factor

O
1.2
1.0
1.1
1.0
0.8 0.9
0.6 0.8
0.4 0.7 IRM
0.2 0.6
dIF/dt(A/ s) Tj(oC)
0.0 0.5
0 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150

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 STTA506D/F/B
Fig. 7: Transient peak forward voltage versus Fig. 8: Forward recovery time versus dIF/dt.
dIF/ft.
VFP(V) tfr(ns)
15 500
14 90% CONFIDENCE Tj=125 C o
90% CONFIDENCE Tj=125 oC
13 450
12 IF=IF(av) VFr=1.1*VF max.
400
11 IF=IF(av)
10 350
9 300
8
7 250
6 200
5
4 150
3 100
2
1 dIF/dt(A/ s)
50
dIF/dt(A/ s)
0 0
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100

s)
Fig. 9: Relative cariation of thermal transient im-
pedance junction to case versus pulse duration
c
pedance junction to case versus pulse duration t(
Fig. 10: Relative cariation of thermal transient im-

(TO-220AC and DPAK). (ISOWATT220AC).

d u
r o
e P
le t
s o
Ob
) -
( s
u ct
o d
Pr
et e
o l
b s
O

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 STTA506D/F/B

APPLICATION DATA
The TURBOSWITCH is especially designed to The way of calculating the power losses is given
provide the lowest overall power losses in any below:
"FREEWHEEL Mode" application (Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.

TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5 Watts

s)
t(
CONDUCTION REVERSE SWITCHING SWITCHING
LOSSES
LOSSES
in the diode
LOSSES
in the diode in the diode
u c
LOSSES
in the transistor

o d
due to the diode

P r
te
o le
b s
Fig. A : "FREEWHEEL" MODE

- O
SWITCHING
( s )
ct
TRANSISTOR

d u
r o IL

e P DIODE:
TURBOSWITCH

l et
s oV
O b R
t
T

F = 1/T = t/T
LOAD

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 STTA506D/F/B
APPLICATION DATA (Cont’d)
Fig. B : STATIC CHARACTERISTICS
Conduction losses :
I
P1 = Vt0 . IF(AV) + Rd . IF2(RMS)
IF

Rd

VR
V
V tO VF
IR Reverse losses :

P2 = VR . IR . (1 - δ)

Fig. C : TURN-OFF CHARACTERISTICS

s)
c t(
V
Turn-on losses :

d u
(in the transistor, due to the diode)
IL

r o
VR × IRM 2 × ( 3 + 2 × S ) × F
I
TRANSISTOR P5 =

e P
6 x dIF ⁄ dt
t
+
le t
VR × IRM × IL × ( S + 2 ) × F
2 x dIF ⁄ dt

s o
b
Turn-off losses (in the diode) :
O
I
dI F /dt DIODE
) - P3 =
VR × IRM 2 × S × F

( s 6 x dIF ⁄ dt

V
ta tb
ct
du
t
P3 and P5 are suitable for power MOSFET and
IGBT
I RM
r o dI R /dt

e P VR

l et trr = ta + tb S = tb / ta

s o
I

O b dIF /dt = VR /L RECTIFIER

OPERATION

ta tb
V
t
dI R /dt
IRM

VR

trr = ta + tb
S = tb/ta

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 STTA506D/F/B

APPLICATION DATA (Cont’d)

Fig. D : TURN-ON CHARACTERISTICS

IF
I Fmax
dI F /dt
Turn-on losses :
P4 = 0.4 (VFP - VF) . IFmax . tfr . F
0 t

VF
V Fp

VF
1.1V F

0 t
tfr

s)
c t(
d u
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e P
le t
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Ob
) -
( s
uct
o d
Pr
et e
o l
b s
O

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 STTA506D/F/B

PACKAGE MECHANICAL DATA

DPAK

DIMENSIONS
REF. Millimeters Inches
Min. Max Min. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251
)
0.259
s
G 4.40 4.60 0.173
t(
0.181

uc
H 9.35 10.10 0.368 0.397
L2 0.80 typ.

o d0.031 typ.
L4
V2
0.60
0°
P
1.00
8° r 0.023
0°
0.039
8°

e
FOOTPRINT DIMENSIONS (in millimeters)
o let
Cooling method : by conduction (C)
6.7

b s
- O
6.7

( s )
ct
du
6.7

r o 3

1.6

e P 1.6

l et 2.3 2.3

s o
O b

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 STTA506D/F/B

PACKAGE MECHANICAL DATA

ISOWATT220AC
A
H B DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181

Diam
B 2.50 2.70 0.098 0.106
L6 D 2.40 2.75 0.094 0.108
L2
L7 E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
L3
F1 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
F1
H 10.00 10.40 0.394 0.409
L2 16.00 typ.
)
0.630 typ.
s
L3 28.60 30.60 1.125
t(
1.205

uc
L6 15.90 16.40 0.626 0.646

od
F D E L7 9.00 9.30 0.354 0.366

Pr
G Diam 3.00 3.20 0.118 0.0126

te
Cooling method : by conduction (C)
o le
Recommanded torque value : 0.55m.N
Maximum torque value : 0.7m.N
b s
- O
( s )
u ct
o d
Pr
et e
o l
b s
O

9/10
 STTA506D/F/B
PACKAGE MECHANICAL DATA
TO-220AC

DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
H2 A
C 1.23 1.32 0.048 0.051
C
D 2.40 2.72 0.094 0.107
L5
L7 E 0.49 0.70 0.019 0.027
ØI
F 0.61 0.88 0.024 0.034
L6 F1 1.14 1.70 0.044 0.066
L2
G 4.95 5.15 0.194 0.202

L9
D H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
F1
L4
L4 13.00 14.00 0.511
s)
0.551

M
L5 2.65 2.95 0.104
c t(0.116
F E L6 15.25 15.75
d u
0.600 0.620
G L7
L9
6.20
3.50
6.60
r
3.93o 0.244
0.137
0.259
0.154
M
e 2.6 typ. P 0.102 typ.
Diam. I
le t
3.75 3.85 0.147 0.151

Cooling method : by conduction (C)

s o
Recommanded torque value : 0.55m.N
Maximum torque value : 0.7m.N Ob
) -
( s
ct
Ordering type Marking Package Weight Base qty Delivery mode
STTA506D STTA506D TO-220AC 1.86g 50 Tube
STTA506F STTA506F
d u ISOWATT220AC 2g 50 Tube
STTA506B
r STTA506B o DPAK 0.3g 75 Tube
STTA506B-TR
e P STTA506B DPAK 0.3g 2500 Tape & reel

l et
Epoxy meets UL94,V0

s o
O b
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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