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STTH3L06: Turbo 2 Ultrafast High Voltage Rectifier
STTH3L06: Turbo 2 Ultrafast High Voltage Rectifier
DESCRIPTION
The STTH3L06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in SMB SMC
discontinuous or critical mode power factor correc- STTH3L06U STTH3L06S
tions.
This device is intended for use as a free wheeling
diode in power supplies and other power switching
applications.
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STTH3L06
Figure 1: Conduction losses versus average Figure 2: Forward voltage drop versus forward
current current
P(W) IFM(A)
4.5 100.0
δ = 0.1 δ = 0.2 δ = 0.5 Tj=150°C
4.0 δ = 0.05 (maximum values)
3.5 Tj=25°C
(maximum values)
δ=1
3.0 10.0 Tj=150°C
(typical values)
2.5
2.0
1.5 1.0
T
1.0
0.5
IF(AV)(A) δ=tp/T tp VFM(V)
0.0 0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Figure 3: Relative variation of thermal impedance Figure 4: Peak reverse recovery current
junction ambient versus pulse duration (epoxy versus dI F /dt (typical values)
printed circuit FR4, Lleads = 10mm, SCU=1cm2)
Zth(j-a)/Rth(j-a) IRM(A)
1.0 20
VR=400V
Tj=125°C
0.9 18
IF=2 x IF(AV)
0.8 16
0.1 2
tp(s) dIF/dt(A/µs)
0.0 0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 50 100 150 200 250 300 350 400 450 500
Figure 5: Reverse recovery time versus dIF/dt Figure 6: Reverse recovery charges versus dIF/
(typical values) dt (typical values)
trr(ns) Qrr(nC)
700 500
VR=400V VR=400V
Tj=125°C Tj=125°C
450
600 IF=2 x IF(AV)
400
500 350
IF=IF(AV)
300
400
IF=2 x IF(AV)
250
IF=0.5 x IF(AV)
300 IF=IF(AV)
IF=0.5 x IF(AV) 200
200 150
100
100
50
dIF/dt(A/µs) dIF/dt(A/µs)
0 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200
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STTH3L06
Figure 7: Softness factor versus dIF/dt (typical Figure 8: Relative variations of dynamic
values) parameters versus junction temperature
S factor 1.25
2.0
S factor
IF=IF(AV)
1.8 VR=400V
Tj=125°C 1.00
1.6
1.4 IRM
0.75
1.2 QRR
1.0
0.50
0.8
IF=IF(AV)
0.6 VR=400V
0.25
Reference: Tj=125°C
0.4
Tj(°C)
0.2 0.00
dIF/dt(A/µs)
0.0 25 50 75 100 125
0 20 40 60 80 100 120 140 160 180 200
Figure 9: Transient peak forward voltage Figure 10: Forward recovery time versus dIF/dt
versus dIF/dt (typical values) (typical values)
VFP(V) tfr(ns)
10 200
IF=IF(AV) IF=IF(AV)
9 Tj=125°C 180 VFR=1.1 x VF max.
Tj=125°C
8 160
7 140
6 120
5 100
4 80
3 60
2 40
1 20
dIF/dt(A/µs) dIF/dt(A/µs)
0 0
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200
Figure 11: Junction capacitance versus Figure 12: Thermal resistance junction to
reverse voltage applied (typical values) ambient versus copper surface under lead
(epoxy FR4, eCU=35µm) (DO-201AD)
C(pF) Rth(j-a)(°C/W)
100 80
F=1MHz
VOSC=30mVRMS
Tj=25°C 70
60
DO-201AD
50
10 40
30
20
10
VR(V) SCU(cm²)
1 0
1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
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STTH3L06
Figure 13: Thermal resistance junction to Figure 14: Thermal resistance junction to
ambient versus copper surface under lead ambient versus copper surface under tab
(epoxy FR4, eCU=35µm) (SMB / SMC) (epoxy FR4, eCU=35µm) (DPAK)
Rth(j-a)(°C/W) Rth(j-a)(°C/W)
100 100
90 90
80 80
SMB
70 70
60 SMC 60
50 50
DPAK
40 40
30 30
20 20
10 10
SCU(cm²) SCU(cm²)
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 40
80 Rth(j-a)
70
60
50
40
Rth(j-l)
30
20
10
Llead(mm)
0
5 10 15 20 25
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STTH3L06
DIMENSIONS
REF. Millimeters Inches
Min. Max Min. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
V2 0° 8° 0° 8°
6.7
6.7
1.6 1.6
2.3 2.3
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STTH3L06
DIMENSIONS
E1
REF. Millimeters Inches
Min. Max. Min. Max.
D
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
E
c 0.15 0.41 0.006 0.016
A1
E 5.10 5.60 0.201 0.220
C A2
E1 4.05 4.60 0.159 0.181
L b
D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063
2.3
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STTH3L06
DIMENSIONS
REF. Millimeters Inches
E1
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
D
A2 0.05 0.20 0.002 0.008
b 2.90 3.2 0.114 0.126
E
c 0.15 0.41 0.006 0.016
E 7.75 8.15 0.305 0.321
A1
L b
E2 4.40 4.70 0.173 0.185
D 5.55 6.25 0.218 0.246
L 0.75 1.60 0.030 0.063
3.3
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STTH3L06
DIMENSIONS
B A B ØC
REF. Millimeters Inches
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
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STTH3L06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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