P4004ED

P-Channel Logic Level Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

-40V 40mΩ @VGS = -10V -21A

TO-252

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20 V
TC= 25 °C -21
Continuous Drain Current ID
TC= 70 °C -17
1
A
Pulsed Drain Current IDM -70
Avalanche Current IAS -27
2 EAS
Avalanche Energy L = 0.1mH 36 mJ
TC= 25 °C 30
Power Dissipation PD W
TC= 70°C 20
Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 4.1
°C / W
Junction-to-Ambient RqJA 40
1
Pulse width limited by maximum junction temperature.
2
VDD = -20V . Starting TJ = 25°C.

REV 1.0 1 2014/5/13

P4004ED
P-Channel Logic Level Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown V(BR)DSS VGS = 0V, ID = -250mA -40
Voltage V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -2.0 -2.5 -3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS =-32V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS =-30V, VGS = 0V, TJ = 125°C 10
On-State Drain Current1 ID(ON) VDS = -5V, VGS = -10V -70 A
VGS =-5V, ID =-8A 65 73
Drain-Source On-State
RDS(ON) VGS = -7V, ID = -8A 35 50 mΩ
Resistance1
VGS =-10V, ID =-10A 30 40
1 gfs VDS = -10V, ID = -10A
Forward Transconductance 20 S
DYNAMIC
Input Capacitance Ciss 1090
Output Capacitance Coss VGS = 0V, VDS = -20V, f = 1MHz 175 pF
Reverse Transfer Capacitance Crss 91
Qg(VGS = -10V) 17
Total Gate Charge2
Qg(VGS =-4.5V) VDS =0.5V(BR)DSS, 8.5
nC
Gate-Source Charge 2 Qgs ID = -18A 5.5
Gate-Drain Charge2 Qgd 3
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 4.95 Ω
2 td(on)
Turn-On Delay Time 6
Rise Time 2 tr @
VDS =-20V ,RL = 2Ω,ID -10A, 16
2 VGS=-10V,RGS=6Ω nS
Turn-Off Delay Time td(off) 26
Fall Time2 tf 10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS -21 A
1 VSD IF = -1A, VGS = 0V
Forward Voltage -1 V
Reverse Recovery Time trr 15.5 nS
IF = -10A, dlF/dt = 100A / μS
Reverse Recovery Charge Qrr 7.9 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

REV 1.0 2 2014/5/13

P4004ED
P-Channel Logic Level Enhancement Mode MOSFET

REV 1.0 3 2014/5/13

P4004ED
P-Channel Logic Level Enhancement Mode MOSFET

REV 1.0 4 2014/5/13

P4004ED
P-Channel Logic Level Enhancement Mode MOSFET

*因为各家封装模具不同而外观略有所差异，不影响电性及Layout。

REV 1.0 5 2014/5/13