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2N2222 PDF
2N2222 PDF
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit 1
2
Collector – Emitter Voltage VCEO 40 Vdc 3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO 40 — Vdc
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO 75 — Vdc
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICEX — 10 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current ICBO µAdc
(VCB = 60 Vdc, IE = 0) — 0.01
(VCB = 60 Vdc, IE = 0, TA = 150°C) — 10
Emitter Cutoff Current IEBO — 10 nAdc
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current ICEO — 10 nAdc
(VCE = 10 V)
Base Cutoff Current IBEX — 20 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE(off) = –2.0 Vdc, td — 10 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr — 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts — 225 ns
IB1 = IB2 = 15 mAdc) (Figure 2)
Fall Time tf — 60 ns
+ 30 V + 30 V
1.0 to 100 µs, 1.0 to 100 µs, 200
200
+16 V DUTY CYCLE ≈ 2.0%
+16 V DUTY CYCLE ≈ 2.0%
0 0
1 kΩ –14 V 1k CS* < 10 pF
–2 V CS* < 10 pF
< 2 ns < 20 ns
1N914
1000
700
500 TJ = 125°C
hFE , DC CURRENT GAIN
300
200
25°C
100
70
–55°C
50
30 VCE = 1.0 V
20 VCE = 10 V
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)
1.0
TJ = 25°C
0.8
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
30
t, TIME (ns)
70
20 tf
50
30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
10 10
RS = OPTIMUM f = 1.0 kHz
IC = 1.0 mA, RS = 150 Ω RS = SOURCE
8.0 RS = RESISTANCE 8.0
500 µA, RS = 200 Ω IC = 50 µA
NF, NOISE FIGURE (dB)
4.0 4.0
2.0 2.0
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
30 500
VCE = 20 V
20 TJ = 25°C
300
Ceb
CAPACITANCE (pF)
10 200
7.0
5.0
100
Ccb
3.0 70
2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
VBE(sat) @ IC/IB = 10
1.0 V – 0.5
0.6
VBE(on) @ VCE = 10 V – 1.0
0.4
– 1.5
0.2
– 2.0 RqVB for VBE
VCE(sat) @ IC/IB = 10
0 – 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––
STYLE 17:
CASE 029–04 PIN 1. COLLECTOR
2. BASE
(TO–226AA) 3. EMITTER
ISSUE AD
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*P2N2222A/D*
6 ◊ P2N2222A/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data