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Unidade Injetora 2
Unidade Injetora 2
Unidade Injetora 2
Vishay Siliconix
V(BR)DSS (V) rDS(on) () ID (A)
0.022 @ VGS = 10 V 40
60
0.025 @ VGS = 4.5 V 40
TO-220AB D
TO-263
G
DRAIN connected to TAB
G D S
Top View
G D S
SUB40N06-25L S
Top View
N-Channel MOSFET
SUP40N06-25L
Notes:
a. Duty cycle 1%.
b. See SOA curve for voltage derating.
c. Surface Mounted on FR4 Board, t 10 sec.
Parameter Symbol Test Condition Min Typ Max Unit
Static
VDS = 60 V, VGS = 0 V 1
Zero
Z Gate
G Voltage
V l Drain
D i Current
C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 mA
A
VDS = 60 V, VGS = 0 V, TJ = 175C 150
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 40 A
VGS = 10 V, ID = 20 A 0.022
Dynamicb
Input Capacitance Ciss 1800
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Output Characteristics Transfer Characteristics
100 60
6V
VGS = 10, 9, 8, 7 V 5V
80
45
I D – Drain Current (A)
40
TC = 125C
15
20
3V 25C
–55C
0 0
0 2 4 6 8 10 0 1 2 3 4 5
0.03
g fs – Transconductance (S)
50 25C
VGS = 4.5 V
40 125C VGS = 10 V
0.02
30
20
0.01
10
0 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60
2500 VDS = 30 V
V GS – Gate-to-Source Voltage (V)
8 ID = 40 A
C – Capacitance (pF)
2000
Ciss
6
1500
4
1000
2
500 Coss
Crss
0 0
0 15 30 45 60 0 10 20 30 40 50
TJ = 150C
1.5 TJ = 25C
10
1.0
0.5
0 1
–50 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
Drain Current vs. Case Temperature Safe Operating Area
50 200
100
40
Limited
I D – Drain Current (A)
I D – Drain Current (A)
by rDS(on) 100 ms
30 10
1 ms
20
10 ms
1
TC = 25C 100 ms
10
Single Pulse dc, 1 s
0 0.1
0 25 50 75 100 125 150 175
0.1 1 10 100
TC – Case Temperature (C) VDS – Drain-to-Source Voltage (V)
1
Duty Cycle = 0.5
Normalized Effective Transient
0.2
Thermal Impedance
0.1
0.1
Single Pulse
0.05
0.02
0.01
10–5 10–4 10–3 10–2 10–1 1 3
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