SUP/SUB40N06-25L

Vishay Siliconix

N-Channel 60-V (D-S), 175C MOSFET, Logic Level


  
V(BR)DSS (V) rDS(on) (
) ID (A)
0.022 @ VGS = 10 V 40
60
0.025 @ VGS = 4.5 V 40

TO-220AB D

TO-263

G
DRAIN connected to TAB

G D S
Top View
G D S
SUB40N06-25L S
Top View
N-Channel MOSFET
SUP40N06-25L

         


Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS
20

Continuous Drain Current TC = 25C 40

ID
(TJ = 175C) TC = 100C 25
A
Pulsed Drain Current IDM 100
Avalanche Current IAR 40
Repetitive Avalanche Energya L = 0.1 mH EAR 80 mJ
TC = 25C (TO-220AB and TO-263) 90c
Power Dissipation PD W
TA = 25C (TO-263)c 3.7
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C

    

Parameter Symbol Limit Unit

PCB Mount (TO-263)c 40

Junction-to-Ambient RthJA
Free Air (TO-220AB) 80 C/W

Junction-to-Case RthJC 1.6

Notes:
a. Duty cycle  1%.
b. See SOA curve for voltage derating.
c. Surface Mounted on FR4 Board, t  10 sec.

Document Number: 70288 www.vishay.com
FaxBack 408-970-5600

S-57253—Rev. C, 24-Feb-98 2-1
SUP/SUB40N06-25L
Vishay Siliconix


       
 
 



Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60

V
Gate Threshold Voltage VGS(th) VDS = VGS, IDS = 250 mA 1.0 2.0 3.0

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = 60 V, VGS = 0 V 1
Zero
Z Gate
G Voltage
V l Drain
D i Current
C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 mA
A
VDS = 60 V, VGS = 0 V, TJ = 175C 150
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 40 A

VGS = 10 V, ID = 20 A 0.022

VGS = 10 V, ID = 20 A, TJ = 125C 0.043

D i S
Drain-Source On-State
O S Resistance
R i a rDS(on) W
VGS = 10 V, ID = 20 A, TJ = 175C 0.053

VGS = 4.5 V, ID = 20 A 0.025

Forward Transconductancea gfs VDS = 15 V, ID = 20 A S

Dynamicb
Input Capacitance Ciss 1800

Output Capacitance Coss VGS = 0 V,

V VDS = 25 V
V, f = 1 MH
MHz 350 pF
F
Reversen Transfer Capacitance Crss 100
Total Gate Chargec Qg 40 60
Gate-Source Chargec Qgs VDS = 30 V
V, VGS = 10 V,
V ID = 40 A 9 nC
C
Gate-Drain Chargec Qgd 10
Turn-On Delay Timec td(on) 10 20
Rise Timec tr VDD = 30 V,, RL = 0.8 W 9 20
ns
Turn-Off Delay Timec td(off) ID ] 40 A, VGEN = 10 V, RG = 2.5 W 28 50
Fall Timec tf 7 15

Source-Drain Diode Ratings and Characteristics (TC = 25C)b

Continuous Current Is 40
A
Pulsed Current ISM 100
Forward Voltagea VSD IF = 40 A, VGS = 0 V 1.0 1.5 V
Reverse Recovery Time trr 48 100 ns
Peak Reverse Recovery Current IRM(REC) IF = 40 A,
A di/dt
di/d = 100 A/ms
A/ 6 A
Reverse Recovery Charge Qrr 0.15 mC

Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

www.vishay.com
FaxBack 408-970-5600 Document Number: 70288

2-2 S-57253—Rev. C, 24-Feb-98
 SUP/SUB40N06-25L
Vishay Siliconix

 
       
Output Characteristics Transfer Characteristics
100 60
6V
VGS = 10, 9, 8, 7 V 5V

80
45
I D – Drain Current (A)

I D – Drain Current (A)

60
4V
30

40
TC = 125C
15
20
3V 25C
–55C
0 0
0 2 4 6 8 10 0 1 2 3 4 5

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

70 0.04
TC = –55C
60
r DS(on) – On-Resistance ( Ω )

0.03
g fs – Transconductance (S)

50 25C
VGS = 4.5 V
40 125C VGS = 10 V
0.02
30

20
0.01

10

0 0
0 10 20 30 40 50 60 0 10 20 30 40 50 60

ID – Drain Current (A) ID – Drain Current (A)

Capacitance Gate Charge

3000 10

2500 VDS = 30 V
V GS – Gate-to-Source Voltage (V)

8 ID = 40 A
C – Capacitance (pF)

2000
Ciss
6

1500

4
1000

2
500 Coss
Crss

0 0
0 15 30 45 60 0 10 20 30 40 50

VDS – Drain-to-Source Voltage (V) Qg – Total Gate Charge (nC)

Document Number: 70288 www.vishay.com
FaxBack 408-970-5600

S-57253—Rev. C, 24-Feb-98 2-3
 SUP/SUB40N06-25L
Vishay Siliconix

       

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 20 A
2.0
r DS(on) – On-Resistance ( Ω )

TJ = 150C

I S – Source Current (A)

(Normalized)

1.5 TJ = 25C
10
1.0

0.5

0 1
–50 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5

TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)

  

Drain Current vs. Case Temperature Safe Operating Area
50 200

100
40
Limited
I D – Drain Current (A)
I D – Drain Current (A)

by rDS(on) 100 ms
30 10

1 ms

20
10 ms
1
TC = 25C 100 ms
10
Single Pulse dc, 1 s

0 0.1
0 25 50 75 100 125 150 175
0.1 1 10 100
TC – Case Temperature (C) VDS – Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1

Single Pulse
0.05
0.02

0.01
10–5 10–4 10–3 10–2 10–1 1 3

Square Wave Pulse Duration (sec)

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FaxBack 408-970-5600 Document Number: 70288

2-4 S-57253—Rev. C, 24-Feb-98
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