P0903BEA

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 9mΩ @VGS = 10V 48A

PDFN 3x3P

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
TC = 25 °C 48
TC = 100 °C 30
Continuous Drain Current2 ID
TA = 25 °C 13
A
TA = 70 °C 10
Pulsed Drain Current1 IDM 130
Avalanche Current IAS 30
Avalanche Energy L = 0.1mH EAS 45 mJ
TC = 25 °C 33
TC = 100 °C 13
Power Dissipation PD W
TA = 25 °C 2.3
TA = 70 °C 1.5
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

Ver 1.0 1 2012/9/4

P0903BEA
N-Channel Enhancement Mode MOSFET

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient3 RqJA 55
°C / W
Junction-to-Case RqJC 3.7
1
Pulse width limited by maximum junction temperature.
2
Package limitation current is 30A.
3
The value of R<JA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper , in a still air
environment with TA=25°C。The value in any given application depends on the user's specific board design

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.7 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V , TJ = 55 °C 10
On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V 130 A
Drain-Source On-State VGS = 4.5V, ID = 10A 11.2 13
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 13A 7 9
Forward Transconductance1 gfs VDS = 5V, ID = 13A 45 S
DYNAMIC
Input Capacitance Ciss 1590
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 193 pF
Reverse Transfer Capacitance Crss 159
Qg(VGS=10V) 31
Total Gate Charge2
Qg(VGS=4.5V VDS = 0.5V(BR)DSS, ID = 13A, 17
nC
Gate-Source Charge 2 Q)gs VGS=10V 5.5
Gate-Drain Charge2 Qgd 8
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.7 Ω
2 td(on)
Turn-On Delay Time 9
2 tr
Rise Time VDS = 0.5V(BR)DSS, 14
nS
Turn-Off Delay Time 2 td(off) ID @ 13A, VGS = 10V, RGEN = 3Ω 32
Fall Time2 tf 16

Ver 1.0 2 2012/9/4

P0903BEA
N-Channel Enhancement Mode MOSFET

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

3 IS
Continuous Current 48 A
1 VSD IF = 13A, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr 11.7 nS
IF = 13A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 2 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Package limitation current is 30A.

Ver 1.0 3 2012/9/4

P0903BEA
N-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/9/4

P0903BEA
N-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/9/4

P0903BEA
N-Channel Enhancement Mode MOSFET

Ver 1.0 6 2012/9/4

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