09 Chapter 3

Chapter 3
Scattering parameter based Modeling and

Simulation of Symmetric Tied-gate InAlAs/
InGaAs DG-HEMT for Millimeter-wave
Applications
Monika Bhattacharya 82
Chapter 3
Scattering parameter based Modeling and Simulation …
3.1 INTRODUCTION
Superior ultra-high frequency and low-noise performance reported for the fabricated
100 nm gate-length trenched gate InAlAs/InGaAs DG-HEMT has generated great
interest in the device [Vasallo08, Wichmann04]. However, further exploration of the
device potential for low-noise microwave integrated circuit design, future military
communications, radar and intelligence applications, requires a comprehensive
physics based model which can be used for accurate analysis of the device
performance at ultra-high frequencies and also forms the basis for the modeling of its
noise performance.
In the previous chapter, a charge control based analytical model was proposed for the
microwave performance assessment of lattice matched 100 nm gate-length symmetric
tied-gate geometry InAlAs/InGaAs DG-HEMT [Bhattacharya10]. Superior performance
of the DG-HEMT as compared to its single-gate (SG) counterpart was established in
terms of higher drain current and improved transconductance which occurs due to
higher sheet-carrier concentration and better gate control. The significance of
optimization of the various device parameters for the extraction of best device
performance was also investigated which was found to be even more important for a
double-gate structure as compared to the single-gate structure. For designing of low
noise microwave active circuits, using these high performance transistors, the
knowledge of its scattering (S) parameters is inevitable. Scattering (S) parameter
measurements are in fact the most common microwave measurements used for the
characterization of HEMTs. Then, from these S parameters measured at a particular
bias point, the various elements of the small-signal equivalent circuit are extracted.
Therefore, for a more extensive analysis of the performance of InAlAs/InGaAs DG-

HEMT for ultra-high frequency applications, an analytical approach for accurate
evaluation of its scattering (S) parameters that correspond well with the device
simulation results as well as with the experimental measurements is presented in this
chapter [Bhattacharya11]. Such a device model based on S-parameter evaluation is
inevitable for accurate microwave amplifier circuit design which is optimized for
providing the best performance in terms of power gain, stability, maximum frequency
of oscillation and minimum noise figure.
Chapter 3
The present analysis begins with obtaining the intrinsic short-circuit admittance (Y)
parameters for a single-gate (SG) and symmetric tied-gate geometry double-gate (DG)
HEMT using its two-port small-signal equivalent circuit model. The scattering (S)
parameters are then evaluated from the intrinsic Y parameters including the effect of
the various parasitic elements associated with the source, gate and drain contacts. The
incorporation of the effect of extrinsic elements enables a more accurate evaluation of
the S parameters and power gain that exhibits better correspondence with the
measured results. In addition to this, the results obtained using the analytical model
has also been validated with the device simulation results. The extrinsic scattering
parameters thus evaluated are in turn used for a rigorous RF performance assessment
of the device in terms of the various figures of merit that includes Maximum
Unilateral Power Gain (GTUmax), Maximum Stable Gain (Gms) and the Maximum
frequency of Oscillation (fmax). The model thus established enables a complete
microwave performance characterization of the device for future millimeter wave
low-noise amplifier design applications.
3.1.1 Scattering (S) Parameter Measurement at Microwave

Frequencies
Devices like a discrete FET, a multi-stage MMIC amplifier or any active or passive
circuit when represented as a two-port network shown in Fig. 3.01 can be
characterized by the relationships between the input and output currents and voltages.
These relations are often given in terms of the short-circuit admittance (Y), open
circuit impedance (Z), hybrid (H) or the chain (ABCD) parameters at frequencies
below the microwave regime as illustrated in Table 3.01[Ladbrooke89, Gonzalez84,
Liao86, Pozar05 and Golio08].
I1 I2
TWO-PORT
V1 V2
NETWORK
Input Port Output Port
Fig. 3.01. Two Port Network Representation
84 Monika Bhattacharya
Chapter 3
Table 3.01
Two-port Network Parameters used at frequencies below the microwave regime
Open Circuit Impedance (Z) Parameters Short Circuit Admittance (Y) Parameters
V1   Z11 Z12   I1   I1  Y11 Y12  V1 

V  =  Z    I  = Y Y  V 
 2   21 Z 22   I 2   2   21 22   2 
Hybrid (H) Parameters Chain (ABCD) Parameters
V1   H11 H12   I1  V1   A B   V2 

I  = H    I  = C D   − I 
 2   21 H 22  V2   1   2 
An attempt to measure the H, Y, Z or ABCD parameters of the device directly at

microwave frequencies would require either a short-circuit or open circuit to be
presented at the input port and the output port in turn while measurements are made at
the other port. Such procedures are inconvenient at microwave frequencies where the
provision of obtaining accurate short circuit and especially open circuit is physically
difficult as appreciable impedances can result from very small capacitances and
inductances. For example a shorting wire or strip across the output terminals of a
device will have non-trivial impedance at microwave frequencies. Conversely, an
open circuit formed by simply leaving the terminals open can lead to non-trivial
capacitance and non-trivial impedance. Also, short or open circuit terminations at
microwave frequencies may lead to instability of the device. Therefore, the difficulty
in achieving true open and short circuit condition at the terminals of the two-port
network and the possibility of the device becoming unstable when their terminals are
shorted or open-circuited precludes the use of the H, Y and Z and ABCD network
parameters in the microwave regime. Hence, at microwave frequencies, Scattering (S)
parameters are the set of parameters that are most commonly used for complete
characterization of a linear two-port network.
Unlike the Y, Z, H and ABCD parameters in which the terminal voltages and currents
are directly measured, the scattering (S) parameters relate to the travelling waves that
are scattered or reflected when a network is inserted into a transmission line of certain
characteristic impedance Zo. S-parameter measurements require terminations of 50 Ω
(or similar), which are comparatively easy to realize. They circumvent the need for
Chapter 3
true shorts and opens at the terminations, thus avoiding the accuracy and stability
problem. For the measurement of S-parameters, the two port network is connected to
transmission lines that extend to an impedance termination on the output side and a
signal source on the input side as illustrated in Fig. 3.02.
Fig. 3.02. Two Port Network for S-Parameters
Generally, the impedance seen looking from the terminations into the input and output
ports will be different from the characteristic impedance (Zo) (usually taken as 50 Ω).
Consequently, when the signal source is turned on, there will be incident and reflected
voltage waves (V2+ and V2- respectively) at the output port and incident and reflected
voltage waves (V1+ and V1- respectively) at the input port. Therefore, in terms of
these incident and reflected voltage waves, new variables, a1, a2, b1 and b2 are defined
in which a1and b1 now represent the incident and reflected waves respectively at the
input port, and, a2 and b2 represent the incident and reflected waves respectively at the
output port as illustrated in Fig. 3.02.
In terms of these newly defined variables, the scattering (S) parameters for a two port
network are defined as:
b1   S11 S12   a1 

b  =  S S   a 
 2   21 22   2 
The physical meaning and significance of the set of four scattering parameters (S11,
S12, S21 and S22) is illustrated in Fig. 3.03.
Chapter 3
Input Reflection Coefficient ( S11 ) Reverse Transmission Coefficient ( S12 )
b1 b1
S11 = S12 =
a1 a2 = 0 a2 a1 = 0
Forward Transmission Coefficient ( S21 ) Output Reflection Coefficient ( S22 )
b2 b2
S 21 = S 22 =
a1 a2 = 0
a2 a1 = 0
Fig. 3.03. Scattering Parameters
The Input Reflection Coefficient (S11) is defined as the ratio of the wave reflected at
input port (Port 1) to the wave incident at the input port with the output port (Port 2)
terminated with characteristic impedance (Zo) (i.e. the wave incident at the Port 2, a2
= 0). With regard to the microwave amplifier design, it is related to the matching of
the input port with the source impedance.
The Reverse Transmission Coefficient (S12) also regarded as the Reverse Isolation
parameter determines the level of feedback from the output of an amplifier to the
input and therefore influences its stability (its tendency to refrain from oscillation).
Mathematically, it is defined as the ratio of the wave transmitted at the input port
(Port 1) to the wave incident at the output port (Port 2) when Port 1 is terminated with
the characteristic impedance (Zo),i.e., a1 = 0.
The Forward Transmission Coefficient (S21) is very important with regard to the
microwave amplifier design as it is directly related to the maximum transducer power
2
gain of the device given as S 21 . Therefore, higher the value of S21, higher is the
power gain obtainable from the device and hence higher is the frequency of operation
of the device. Mathematically, it represents the ratio of the wave transmitted at the
Chapter 3
output port (Port 2) to the wave incident at the input port (Port 1) with the load
impedance (ZL) matched with the characteristic impedance (Zo).
The Output Reflection Coefficient (S22) is defined as the ratio of the wave reflected at
the output port (Port 2) for the wave incident at the output port with the input port
(Port 1) terminated with characteristic impedance (Zo) (i.e. the wave incident at the
Port 1, a1 = 0). With regard to the microwave amplifier design, it is related to the
matching of the output port with the load impedance.
3.1.2 Microwave Amplifier Design And Power Gains

Amplification forms one of the most basic and vital function of a microwave active
circuit. As early as in 1970s, microwave amplifiers were based on tubes, such as
klystrons and travelling-wave tubes or solid-state reflection amplifiers based on the
negative resistance characteristics of tunnel or varactor diodes. Due to dramatic
improvement and innovations in solid-state technology, modern day RF and
microwave amplifiers are based on high performance transistors such as GaAs HBTs
and GaAs or InP based HEMTs. The major requirements of modern day microwave
amplifiers include [Golio08, Gonzalez84, Liao86]:
[i] broad frequency range of operation in excess of 100 GHz
[ii] small size
[iii] low noise figure
[iv] low to medium power capacity
Accurate transistor amplifier design relies mainly on the characterization of the
terminal characteristics of the transistor which are represented by the scattering (S)
parameters. Such an evaluation of the S parameters, in turn, is achieved using an
accurate analytical device model. The power gain produced by the microwave active
amplifier is then obtained which gives the ultimate measure of ultra-high frequency
properties of the device.
In the following sections, the various power gains which are derived from the
scattering parameter based characterization of a two-port network are discussed. The
block diagram of a HEMT based microwave amplifier circuit with input and output
matching networks is given in Fig. 3.04 (a). The corresponding S-parameter based
signal flow graph used for the evaluation of the various power gains is also shown in
Chapter 3
Fig. 3.04 (b). ΓIN and ΓOUT represent the input and output reflection coefficients; ΓS
and ΓL represent the source and load reflection coefficients.
(a) Block diagram
(b) Signal Flow Diagram
Fig. 3.04. (a) Block Diagram of HEMT based Microwave Amplifier Circuit with Input and Output
Matching Networks and (b) the equivalent signal flow graph
3.1.2.1 Transducer Power Gain (GT)
It is defined as the ratio of the output power PL delivered to the load ZL over the input
power PAVS available from the source to the network given as [Gonzalez84, Liao86]:
PL
GT =
PAVS
where, PL = PAVN (power available from the network) when ΓL = ΓOUT*
PAVS = PIN (power input to the network) when ΓIN = ΓS*
(* represents conjugate)
From the signal flow graph shown in Fig. 3.04 (b), GT is evaluated in terms of the S-
parameters and the source and load reflection coefficients (ΓS and ΓL respectively) as:
GT =
(1 − Γ ) S (1 − Γ )
S
2
21
2
L
2
2 (3.01)
(1 − S11Γ S )(1 − S22 Γ L ) − S12 S21Γ S Γ L
Chapter 3
The three special cases of Power Gain (GT) evaluated for a microwave amplifier is
discussed as follows:
(i) Matched Transducer Power Gain (GTM) is achieved when both the input and
output networks are perfectly matched to the source and the load impedance
respectively such that ΓS = ΓL=0 which gives:
2
GTM = S21 (3.02)
Therefore, the forward transmission coefficient (S21) determines the maximum

power gain obtainable from a microwave amplifier circuit under perfectly
matched conditions.
(ii) Unilateral Transducer Power Gain (GTU) is essentially the forward power gain
in a microwave amplifier with feedback, having its reverse feedback power gain
2
set to zero, i.e., S12 = 0 , and is expressed as:
GTU =
(1 − Γ ) S (1 − Γ )
S
2
2 L
2
2 21 2 (3.03)
1 − S11Γ S 1 − S 22 Γ L
(1 − Γ )S
2
(1 − Γ )L
2
The term 2 (denoted as GS) and the term 2 (denoted as GL) in

1 − S11Γ S 1 − S22 Γ L
the above expression represent the gain or loss produced by the matching or
mismatch of the input and output circuits respectively.
Therefore, Gs represents the degree of matching or mismatch between ΓS and S11.

It is considered as the input gain block in which decreasing the mismatch
between ΓS and S11 can be thought of as providing gain. Similarly, GL represents
the degree of matching or mismatching between ΓL and S22 and is considered as
the output gain block.
(iii) Maximum Unilateral Transducer Power Gain (GTUmax) is obtained when the
input impedance (ZIN) of the active two port network is conjugately matched with
the source impedance (ZS) and similarly the output impedance (ZOUT) of the
Chapter 3
active two port network is conjugately matched with the load impedance (ZL)
such that ΓS = S11* and ΓL = S22*. Then,
2
S 21
GTUmax = (3.04)
(1 − S )(1 − S )
11
2
22
2
−1
where, (1 − S11 2 ) represents the maximum increase in gain due to matching of
−1
the input port, (1 − S22 2 ) represents the maximum increase in gain due to
matching of the output port and S21 2 represents the gain contribution of the
active network.
3.1.2.2 Maximum Available Power Gain (Gamax) and Maximum

Stable Gain (Gms)
The available power gain (Ga) of a microwave amplifier is defined as the ratio of the
power available from the network (PAVN) to the power available from the source
(PAVS), expressed as [Gonzalez84, Liao86]:
2
P 1 − ΓS 2 1
Ga = AVN = 2
S 21 2
PAVS 1 − S11Γ S 1 − ΓOUT
*
*  S S Γ 
which is derived from the condition PAVN = PL, when, Γ L = Γ OUT =  S 22 + 12 21 S 
 1 − S11Γ S 
Maximum Available Power Gain (Gamax), which occurs for the simultaneous
conjugate match at the input and the output port is then evaluated as:
1
S21
Ga max = K − ( K 2 − 1) 2 (3.05)
S12
2 2 2
1 + ∆ − S11 − S22
where, K = > 1 (for unconditional stability)
2 S12 S 21
with ∆ = S11 S22 − S12 S21 < 1
Chapter 3
Maximum Stable Gain (Gms) is then evaluated as the maximum gain available from
the microwave amplifier just before it becomes unstable, i.e., at K=1, given as:
S 21
Gms = (3.06)
S12
For a microwave amplifier to be unconditionally stable, K>1 with ∆ <1
Therefore, the physical significance of ‘K’ which is regarded as the ‘Stability Factor’
is that, it determines the maximum frequency upto which the microwave amplifier is
stable.
Maximum Stable Gain (Gms) forms a very important figure of merit with regard to
microwave amplifier design. High value of Gms is desirable in the frequency range of
interest for a given application
3.1.2.3 Operating Power Gain (GP)
The operating power gain (GP) of a microwave amplifier is defined as the ratio of the
power delivered to the load (PL) to the power input to the network from the source
(PIN) as [Gonzalez84, Liao86]:
2
P 1 2 1 − ΓS
GP = L = 2
S21 2 (3.07)
PIN 1 − Γ IN 1 − S11Γ S
*
*  S S Γ 
which is derived from the condition PAVS = PIN, when, Γ S = Γ IN =  S11 + 12 21 L 
 1 − S22 Γ L 
Since, PIN≤ PAVS, the operating power gain (GP) is always greater than or equal to the
transducer power gain.
3.1.2.4 Maximum Unilateral Power Gain (GU)
It is the highest possible gain that an active port can achieve and is greater than any of
the other power gains earlier discussed including the Transducer Power Gain,
Operating Power Gain and the Available Power Gain. It is vital figure of merit with
regard to the maximum frequency of operation of the microwave amplifier and is
often quoted by the transistor manufacturers in the commercial market. It is given as
[Kasemsuwan97]:
Chapter 3
2
1 S21
−1
2 S12
GU = (3.08)
S S 
K 21 − Re  21 
S12  S12 
Maximum Frequency of Oscillation (fmax) is evaluated as the frequency at which the

Unilateral Power Gain is unity or 0 dB. Therefore, it is an indicator of an ultimate
frequency limit of the device. With respect to the microwave amplifier design, the
maximum power gain obtainable in conjugately matched conditions is more important
than the short circuited current gain. This makes Maximum frequency of Oscillation
(fmax) as an even more important figure of merit than the Unity-gain cut-off frequency
(fT).
3.2 SCATTERING PARAMETER BASED MODELING APPROACH

FOR RF PERFORMANCE ASSESSMENT
The modeling approach followed for the evaluation of scattering (S) parameters and
power gains of InAlAs/InGaAs single-gate (SG) and symmetric tied-geometry
double-gate (DG) HEMT considered in the analysis can be summarized as:
Development of a charge control based analytical model which accurately
predicts the variation of sheet-carrier concentration (ns) in the channel with
the applied gate-source voltage (Vgs).
Evaluation of drain current and the various intrinsic parameters of the small-
signal equivalent circuit including the transconductance (gm), gate
capacitances (Cgs and Cgd) and the drain conductance (gd).
The short circuit admittance (Y) parameters which are commonly used for the
characterization of two-port networks are then obtained in terms of these
equivalent circuit elements.
However, at microwave frequencies, experimental investigation of the device
generally involves the measurement of scattering (S) parameters. Therefore,
with respect to the device performance analysis at frequencies in the
microwave regime and above, characterization of the microwave active
Chapter 3
circuits in terms of scattering (S) parameters is more relevant.

Therefore, the intrinsic Y parameters evaluated in terms of the equivalent
circuit elements are converted into the S parameters using standard
transformation relations.
For more accurate evaluation of the scattering (S) parameters that matches
closely with the experimentally measured S-parameters, the effect of the
various extrinsic/parasitic elements including the gate-metallization resistance
(Rg), source and drain contact resistances (Rs and Rd respectively), the contact
pad capacitances at the gate and drain electrodes (Cpg and Cpd respectively)
and the parasitic inductances at the source, drain and gate electrodes (Ls, Lg
and Ld respectively) are also included. These parasitic elements become very
significant at ultra-high frequencies, and therefore, must be incorporated in
the active device model.
In terms of the extrinsic scattering (S) parameters, the various power gains
including the Unilateral Power Gain (GU) and the Maximum Stable Gain
(Gms) are evaluated.
The results, thereby obtained using the analytical model are also compared
and found to correspond well with the experimental measurements as well as
with the ATLAS device simulation results [ATLAS09].
3.2.1 Development of Small Signal Equivalent Circuit For

Symmetric Tied-Gate Geometry DG-HEMT
The extrinsic small signal equivalent circuit model for a conventional single-gate
HEMT is shown in Fig. 3.05 [Guru03, Nagatomo93, Eskandarian88]. The elements inside
the dashed box represent the intrinsic part of the equivalent circuit comprising of the
gate-capacitances (Cgs and Cgd), drain conductance (gd), the drain-source capacitance
(Cds) and the current generator ( ym = g m exp(− jωτ ) ) in which gm is the
transconductance and τ is the transit time of the velocity saturated carriers across the
gate-length. Rgd is the gate-drain (feedback) resistance which is included in the
equivalent circuit model to ensure a smooth transition from cold model to operating
Chapter 3
points in the saturation region because it causes the forward transfer conductance to
have a real part (i.e. Re (y21) is not zero).
Fig. 3.05. Extrinsic small-signal equivalent circuit model for SG-HEMT
Most of these elements have already been explained and derived using the charge
control based analytical model presented in the previous chapter. In addition to these
intrinsic small-signal equivalent circuit elements, the various parasitic extrinsic
elements are also shown, the physical significance of each of which can be illustrated
as follows [Golio91]:
Parasitic Inductances (Ls, Ld and Lg) associated with the source, drain and
gate electrodes respectively arise primarily from the contact pads deposited on
the device surface. Therefore, their values are dependent on the surface
features of the device. Lg and Ld are of the order of 5 to 10 pH with Ls being
smaller with value of around 1 pH. Lg is generally the largest of the three.
These inductances exist in addition to any parasitic bond wire inductances or
parasitic package inductances which must be accounted for in the device
model.
Parasitic resistances (Rs and Rd) associated with the source and the drain
represents the ohmic contact resistance as well as any bulk resistance leading
up to the active channel. The parasitic resistance (Rg) associated with the gate
results from the metallization resistance of the schottky gate-contact.
Chapter 3
Parasitic capacitances (Cpg and Cpd) represent the contact pad capacitances
associated with gate and drain electrodes.
The following section presents the development of the extrinsic small signal
equivalent circuit for a symmetric tied-gate geometry DG-HEMT. Fig. 3.06 shows the
resultant equivalent circuit of a DG-HEMT (the elements corresponding to the
equivalent circuit of the two heterostructures are differentiated by notations ‘1’ and
‘2’).
Fig. 3.06. Equivalent circuit of the DG structure with both the gates tied
The structure is symmetric (dimensions and doping levels of the corresponding layers
in the two heterostructures is the same) and in addition to this the same voltage is
applied to both the gate electrodes such that they can be considered to be tied together
as illustrated in the figure. As a result of this, the following assumptions can be made:
Ri1 = Ri2 = Ri’, Cgs1= Cgs2 = Cgs’, Rgd1 = Rgd2 = Rgd’, Cgd1= Cgd2 = Cgd’, gd1 =
gd2 = gd’. Also, ym1 = ym2 = ym’.
Chapter 3
In addition to this, since the contact properties at both the gates are also the
same, Lg1= Lg2 = Lg and Cpg1 = Cpg2 =Cpg
Since, the voltage applied to both the gates is equal, the voltage at the
corresponding nodes 1 and 1’, 2 and 2’, 3 an 3’, 4 and 4’, 5and 5’, 6 and 6’ &
7 and 7’ are the same.
Therefore, the resultant equivalent circuit is obtained as shown in Fig. 3.07. in which
Ri = Ri’/2, Cgs =2Cgs’, Rgd = Rgd’/2, Cgd = 2Cgd’, gd = 2gd’ and ym = 2ym’. Considering
the extrinsic elements, Lg = Lg’/2, Rg = Rg’/2 and Cpg = 2Cgd’.
Fig. 3.07. Resultant Equivalent circuit assuming symmetric structure with tied-gate geometry
Therefore, due to the two gates being tied together, gate metallization resistance (Rg)
in a symmetric tied geometry double-gate structure is nearly half of that for a SG-
HEMT which leads to improved Maximum frequency of Oscillation (fmax). This is
because fmax which is regarded as the maximum frequency upto which power gain is
achievable from a microwave amplifier is essentially extrinsic parameter dependent,
given as [Liechti76]:
fT (3.09)
f max =
2(r1 + fT ⋅ r2 )1 2
where, fT is Unity Gain cut-off frequency defined in terms of transconductance (gm)

and gate capacitances (Cgs and Cgd) as:
gm (3.10)
fT =
2π ( Cgs + Cgd )
Chapter 3
; r1 = ( Rg + Rs + Ri ) ⋅ g d and r2 = 2π Rg Cgd (3.11)
where, gd is the drain conductance, Ri is the input channel resistance and Rs and Rg
are the parasitic resistances associated with the source and gate, Therefore, lower gate
metallization (Rg) in a DG structure results in higher fmax.
In addition to this, the drain-source capacitance (Cds) which represents the carrier
injection into the buffer layer in the equivalent circuit of SG-HEMT does not form the
part of the equivalent circuit of DG-HEMT. This is because in a DG structure, the
buffer layer is not present which leads to the elimination of the injection of carriers
into the buffer layer.
3.2.2 Evaluation of Short- Circuit Admittance (Y) Parameters

The equivalent circuit model used for the evaluation of intrinsic short circuit
admittance (Y) parameters of symmetric tied-gate geometry double-gate HEMT is
shown in Fig. 3.08. As shown in the figure, the control voltage (Vgs) is considered to
be defined across the gate-source capacitance (Cgs) only as it is found to be more
suitable judging from the lower frequency dependence of the equivalent circuit
parameters and better agreement between the calculated and measured two port (Y or
S) parameters [Yanagawa96] as compared to the Curtice model [Curtice84] in which the
control voltage is defined across both Cgs and Ri. In addition to this, the effect of the
gate-drain (feedback) resistance (Rgd) has also been neglected in the evaluation of
intrinsic Y parameters.
Fig. 3.08. Intrinsic Equivalent Circuit Model for the evaluation of Y parameters
Chapter 3
Therefore, from two-port network analysis of the above shown equivalent circuit
model, the intrinsic short-circuit admittance (Y) parameters are evaluated in terms of
the various circuit elements and are given below [Berroth90, Roblin87, Dambrine88,
Gonzalez87, Shirakawa95].
Input Admittance y11

I1 ω 2 ⋅ C gs 2 ⋅ Ri  C gs 
y11 = = + jω  + C gd  (3.12a)
V1 V = 0
2
D  D 
Reverse Transfer Admittance y12
I1
y12 = = − jω ⋅ Cgd (3.12b)
V2 V1 = 0
Forward Transfer Admittance y21

I2 g m ⋅ exp( − jωτ )
y21 = = − jωC gd (3.12c)
V1 V2 = 0
1 + jωC gs Ri
Output Admittance y22
I2
y22 = = g d + jωCgd (3.12d)
V2 V1 = 0
where, D = 1 + ω 2 ⋅ C gs 2 ⋅ Ri 2
For the computation of various small-signal equivalent circuit elements (in terms of
which the Y parameters are obtained), the charge control model proposed in the
previous chapter is employed with donor-layer doping concentration, Nd = 0.25 x 1025
m-3, donor-layer thickness, da=50 Ǻ, gate-length, Lg=100 nm and channel width, Z
=100 µm). The other structural and device parameters are the same as considered in
the previous chapter. In the evaluation of Y parameters for the SG-HEMT, the effect
of Cds (drain-source capacitance = 0.04 pF [Guru03]) is also included which
contributes to the output admittance (Y22).
In the following section, the frequency dependence of the various intrinsic short
circuit admittance (Y) parameters is discussed with comparison between the single-
gate (SG) and double-gate (DG) HEMT.
Chapter 3
Fig. 3.09 shows the variation of real and imaginary parts of input admittance Y11 with
frequency for single-gate and double-gate HEMT. For both SG as well as DG-HEMT,
the real part of Input admittance (Y11) increases parabolically with frequency as
shown in Fig. 3.09 (a) which is attributed to its square dependence on the angular
frequency (ω). Similarly, as shown in Fig. 3.09 (b), the imaginary part of input
admittance (Y11) increases linearly with frequency due to its direct proportionality
with ω. In addition to this, a lower value of Re (Y11) is also observed for a higher
gate-source voltage from Fig. 3.09 (a) which occurs due to lower value of gate-source
capacitance, while, as shown in Fig. 3.09 (b), Im(Y11) is higher for higher gate-source
voltage due to higher gate-drain capacitance. Both real as well as imaginary parts of
Y11 are higher for the DG-HEMT as compared to the SG-HEMT due to higher value
of gate-capacitances.
(a) 0.01 (b) 0.18

0.16
∆ Vgs = 0 V
0.008 DG
o Vgs = -0.1 V 0.14
DG 0.12 ∆ Vgs = 0 V
0.006
o Vgs = -0.1 V
Re(Y11)
0.1
Im(Y11)
0.08
0.004
0.06
0.002 0.04
SG 0.02 SG
0 0
0 20 40 60 80 100 0 20 40 60 80 100
Frequency (GHz) Frequency (GHz)
Fig. 3.09. Variation of (a) Real part and (b) Imaginary part of Input Admittance (Y11) with frequency at Vds
= 0.1 V (model)
The variation of real and imaginary parts of output admittance Y22 with frequency is
shown in Fig. 3.10. From Fig. 3.10 (a), the real part of output admittance (Y22) is
observed to be independent of frequency and equal to the drain-conductance (gd) for
both DG as well as SG-HEMT. As also shown in the figure, the real part of output
admittance (Y22) is higher for a higher gate-source voltage due to higher drain-
conductance. Im(Y22) which is equal to jωCgd increases linearly with frequency as
shown in Fig. 3.10 (b). The imaginary part of output admittance (Y22) is higher for a

Chapter 3
higher gate-source voltage due to higher gate-drain capacitance (Cgd). Higher values
of Re(Y22) and Im(Y22) for the DG-HEMT as compared to its SG counterpart is
attributed primarily to higher drain-conductance (gd) and higher gate-drain
capacitance (Cgd) respectively.
(a) 0.13 (b) 0.16
0.14
0.11 DG DG
0.12
0.09 ∆ Vgs = 0 V
0.1
∆ Vgs = 0 V o Vgs = -0.1
Re(Y22)
Im(Y22)
0.07 0.08
o Vgs = -0.1 V
0.06
0.05
0.04
0.03
0.02 SG
SG
0.01 0
0 20 40 60 80 100 0 20 40 60 80 100
Fig. 3.10. Variation of (a) Real part and (b) Imaginary part of Output Admittance (Y22) with frequency
(model)
Fig. 3.11 (a) shows the variation of imaginary part of reverse transfer admittance
(Y12) with frequency. Im(Y12) whose magnitude is equal to admittance associated
with the gate-drain (feedback) capacitance increases linearly with frequency. The
magnitude of Im(Y12) is observed to be higher for double-gate HEMT as compared to
the single-gate HEMT due to higher value of the gate-drain (feedback) capacitance.
Fig. 3.11 (a) also shows a higher magnitude of Im(Y12) for a higher gate-source
voltage which again results due to higher value of gate-drain capacitance (Cgd). Real
part of reverse transfer admittance is zero, i.e., Re(Y12)=0 because the gate-drain
resistance (Rgd) has been neglected and not considered in the present equivalent
circuit model.

Chapter 3
(a) 0
SG
-0.02
-0.04
-0.06
Im(Y12) -0.08
∆ Vgs = 0 V
-0.1
o Vgs = -0.1 V
-0.12
-0.14 DG
-0.16
0 20 40 60 80 100
Frequency (GHz)
(b) 0.16 (c) 0
-0.02
0.14
-0.04 DG
0.12 ∆ Vgs = 0 V
-0.06
o Vgs = -0.1 V
-0.08
0.1
Re(Y21)
Im(Y21)
-0.1
0.08 DG
-0.12
-0.14 ∆ Vgs = 0 V
0.06
o Vgs = -0.1
-0.16
0.04
SG -0.18 SG
0.02 -0.2
0 20 40 60 80 100 0 20 40 60 80 100
Fig. 3.11. Variation of (a) Imaginary part of Reverse Transfer Admittance (Y12), (b) Real part of Forward
Transfer Admittance (Y21) and (c) Imaginary part of Forward Transfer Admittance (Y21) with frequency
Fig. 3.11 (b) shows the frequency variation of the real part of forward transfer
admittance (Y21) for both single-gate and double-gate HEMT. Re(Y21) is higher for
the DG-HEMT as compared to the SG-HEMT on account of improved
transconductance (gm). Figure also shows lower value of Re(Y21) for a higher gate-
source voltage. The variation of imaginary part of forward transfer admittance (Y21)
with frequency is shown in Fig. 3.11 (c). The magnitude of Im(Y21) increases linearly
with frequency. A higher magnitude of Im(Y21) is obtained at a higher gate-source
voltage which occurs due to higher value of gm and Cgd. The magnitude of Im(Y21) is

Chapter 3
also observed to be higher for the DG-HEMT over the SG-HEMT which is again
attributed to higher transconductance (gm) and higher gate-drain capacitance (Cgd).
3.2.3 Evaluation of Extrinsic Scattering (S) Parameters

The characterization of two port active networks in terms of the scattering (S)
parameters is more relevant at frequencies in the microwave regime and above which
forms the foundation of microwave active circuit design and the evaluation of its
power gain and stability performance.
Experimental measurement of S-parameters can be performed with great accuracy at

frequencies even greater than 60 GHz due to the availability of sophisticated network
analyzers. The accuracy of the measurements, however, largely depend on the ability
to calibrate the system. For the purpose of microwave active circuit design, an
analytical physics based device model which is reasonably accurate in the desired
frequency bandwidth is still desirable, so that the scattering parameters and power
gains evaluated using the model correspond well with the measured results. Such a
model enables optimization of the structural and material parameters of the active
device in order to obtain the best power gain and high-frequency performance and
also cater to the principle concerns regarding the design of small-signal microwave
active integrated circuits which can be summarized as:
• stability (tendency to oscillate)
• frequency response (unity gain cut-off frequency(fT) and power gain cut-
off frequency (fmax) )
• power gain
• input and output reflection coefficient over a specified bandwidth
• minimum noise figure
The following section presents a procedure for the evaluation of the extrinsic
scattering (S) parameters for symmetric tied-geometry DG-HEMT incorporating the
effect of the various extrinsic elements including the contact resistances associated
with the source and drain electrodes (Rs and Rd respectively), metallization resistance
of the gate contact (Rg), parasitic inductances associated with the source, gate and
drain electrodes (Ls, Lg and Ld respectively) and the contact pad capacitances

Chapter 3
associated with the gate and drain electrodes (Cpg and Cpd respectively). The
corresponding extrinsic equivalent circuit model for the device is also shown in Fig.
3.12 and the values of the various extrinsic elements used in the model are given in
Table 3.02.
Fig. 3.12. Extrinsic Small Signal Equivalent Model of Symmetric Tied Geometry InAlAs/InGaAs
DG-HEMT
Table 3.02
Values of Extrinsic Elements for InAlAs/InGaAs DG-HEMT
(for channel width Z=100 µm)
ELEMENT VALUE [Vasallo07, Mahon92]
Rg 1.7 Ω
Rs 5.8 Ω
Rd 3.0 Ω
Ls, Ld & Lg 20.2, 67.5 and 0.2 (pH) respectively
Cpg and Cpd 0.29 and 0.295 (fF) respectively
For the evaluation of the extrinsic S- parameters, a number of steps are followed, the
complete flow chart of which is summarized in Fig. 3.13 [Dambrine88].

Chapter 3
Intrinsic y to Intrinsic s
Step 1
s11int s12int  G Intrinsic D
 
s 21int s 22int  S
Step 2
Intrinsic s to Extrinsic z G D
 z11int +R s +R g +jωLs z12int +R s +jωLs  Rg

RS
Rd
 
 z 21int +R s +jωLs z 22int +R s +R d +jωLs  LS
S
Step 3
Extrinsic z to Extrinsic y Rg Rd
G D
 y11ext +jωCpg y12ext  Cpg Cpd
  RS
 y 21ext y 22ext +jωCpd 
LS
S
Extrinsic y to Extrinsic z Step 4
 z11ext +jωLg z12ext  G Lg Rg

Extrinsic
Rd Ld D
  Cpg Cpd
 z 21ext z 22ext +jωLd 
RS
LS S
Extrinsic z to Extrinsic s
Fig. 3.13. Flow chart for the conversion of intrinsic (Y) parameters to extrinsic (S) parameters
The intrinsic y-parameters are first converted into scattering (S) parameters. S
parameters are then converted into open circuit impedance (Z) parameters for the
incorporation of the effect of source, gate and drain contact resistances (Rs, Rg & Rd
respectively) and the source parasitic inductance (Ls) as shown in step 2 of the flow
chart. The resultant extrinsic Z-parameters are then converted into short circuit
admittance (Y) parameters to include the effect of gate and drain contact pad
capacitances (Cpg and Cpd respectively) as shown in step 3 of the flow chart These
extrinsic Y parameters are then again converted back to Z parameters, also including
the effect of the gate and drain parasitic inductances (Lg and Ld respectively) as shown
in step 4. The final step involves conversion of the resultant extrinsic Y parameters to
extrinsic S parameters. The conversions between the Y, Z and S parameters are
performed using the conversion table given in [Gonzalez84].

Chapter 3
The following section illustrates the frequency dependence of the set of four extrinsic
(S) scattering parameters, namely, Input Reflection Coefficient (S11), Reverse
Transmission Coefficient (S12), Forward Transmission Coefficient (S21) and Output
Reflection Coefficient (S22). The analytical results are compared and observed to
show good agreement with the device simulation results in the considered frequency
range.
(a) 0.7 (b) 0.6
0 0
0.6
0.5
-0.2
-0.4
Im( S11 )
Im( S22 )
0.5
-0.4 0.4
-0.8
Re( S11 )
0.4 -0.6 Re( S22 )

0.3
0.3 -0.8 -1.2
0 50 100 0 20 40 60 80 100
0.2 Frequency ( GHz )
0.2 Frequency ( GHz )
0.1 line-model 0.1

line-model
symbol-simulated symbol-simulated
0 0
0 20 40 60 80 100 0 20 40 60 80 100
Frequency ( GHz ) Frequency ( GHz )
Fig. 3.14 (a) Variation of Re(S11) and (inset) Im(S11) with frequency, (b) Variation of Re(S22) and (inset)
Im(S22) with frequency at Vds = 0.1 V and Vgs= 0 V [Bhattacharya11]
Figure 3.14 (a) shows the frequency variation of real and imaginary parts of Input
Reflection Coefficient (S11). The magnitude of input reflection coefficient S11 is
related to the mismatch at the input port. The variation of real and imaginary part of
output reflection coefficient (S22) with frequency is also shown in Fig. 3.14 (b). The
magnitude of the output reflection coefficient S22 indicates the degree of mismatch at
the output port.
The frequency variation of real and imaginary parts of Reverse Transmission
Coefficient (S12) is shown in Fig. 3.15 (a). The magnitude of Reverse Transmission
Coefficient S12 is related to the reverse power gain indicative of the feedback.
Fig. 3.15 (b) shows the frequency dependence of the real and imaginary part of the
Forward Transmission Coefficient (S21) which is the main contributor to the
maximum power gain achievable from the device. The maximum unilateral
transducer power gain that can be obtained from the device when the input and output

Chapter 3
2
ports are conjugately matched is given as S21 . Therefore, higher S21 indicates
higher achievable power gain.

(a) (b)
0.2 line-model -0.04 line-model
symbol-simulated symbol-simulated
0.16 -0.08
0.1 1
Re( S21 )
Re( S12 )
0.12 -0.12 0.8

0.075
Im( S12 )
Im( S21 )
0.6
0.05
0.08 -0.16 0.4
0.025
0.2
0.04 0 -0.2 0
0 20 40 60 80 100 0 20 40 60 80 100
0 -0.24
0 20 40 60 80 100 0 20 40 60 80 100
Fig. 3.15 (a) Variation of Re(S12) and (inset) Im(S12) with frequency, (b) Variation of Re(S21) and (inset)
Im(S21) with frequency at Vds = 0.1 V and Vgs= 0 V [Bhattacharya11]
The frequency variation of the various power gains which are extracted in terms of
these extrinsic S-parameters is analyzed in this section.
Fig. 3.16 shows the dependence of Unilateral Power Gain (GU) which is regarded as
the highest possible gain that an active port can achieve at a particular frequency. The
frequency variation curve of GU obtained using the analytical model shows a steep
exponential decrease from the peak value of 35 dB to a value as low as 7 dB at 25
GHz beyond which the rate of fall of GU with frequency decreases significantly
followed by the tail region in which the magnitude of GU stays above but close to 0
dB. This tail region was numerically computed to extend till 265 GHz which forms
the highest frequency up to which the power gain can be obtained from the device. A
similar trend is observed in the frequency variation curve obtained using device
simulation in which also GU initially decreases exponentially from the peak value of
around 37.5 dB down to 6.2 dB at 25 GHz after which the decrement of GU with
frequency slows down. The tail region for the simulated curve is extrapolated to 0 dB
(|GU| = 1) which gives us the value of the Maximum Frequency of Oscillation (fmax)
equal to 259 GHz. The value of fmax obtained from the analytical model is around 265

Chapter 3
GHz which matches closely with the value of 259 GHz obtained using the device
simulation.
45
50
40 V gs = 0 V
Unilateral Power Gain (GU) (dB) 40
V ds = 0.5 V
GU (dB)
35
30
30
20
25 line-model
10 symbol-experimental
[Vasallo 07 ]
20 0
15 1 10 100
Frequency (GHz)
10 Vgs = 0 V Vds = 0.1 V
line-model symbol-simulated
5
0
0 20 40 60 80 100
Frequency (GHz)
Fig. 3.16 Variation of Unilateral Power Gain (GU) with frequency at Vgs = 0 V and Vds = 0.1 V and
(inset) at Vds = 0.5 V with experimental verification [Bhattacharya11]
Fig. 3.16 (inset) shows the variation of the Unilateral Power Gain (GU) with frequency
(log scale) at Vds = 0.5 V which is compared and observed to be in good agreement
with the experimental results further validating the proposed model.
The frequency variation of Maximum Stable Gain (Gms) obtained using the proposed
analytical model is shown in Fig. 3.17 (a) which is also compared and found to show
good agreement with that obtained using device simulation. As shown in Fig. 3.17 (a)
(inset), the peak value of Gms obtained analytically is 15 dB, while, that obtained
through device simulation is 13.8 dB. From both the frequency variation curves,
obtained analytically as well as that obtained through simulation, a steep decrease in
Gms is observed for low frequencies up to around 10 GHz. Thereafter, the decrement
of Gms with frequency occurs at a much slower rate maintaining its value to much
greater than 0 dB for frequencies even greater than 100 GHz. This indicates good
stability performance exhibited by the device making it suitable for RF and low-noise
amplifier applications.

Chapter 3
(a) 100
16
12
Gms (dB)
Maximum Stable Gain (dB)
8
10
4
0
1 10 100
Frequency ( GHz )
1
line-model
symbol-simulated
0.1
0 20 40 60 80 100
Frequency ( GHz )
(b) 100
50
Max. Unilateral Transducer Power Gain (dB)
40
GTUmax (dB)
30
10
20
10
0
1 1 10 100
Frequency ( GHz )
line-model
symbol-simulated
0.1
0 20 40 60 80 100
Frequency ( GHz )
Fig. 3.17. Variation of (a) Maximum Stable Gain (Gms) and (b) Maximum Unilateral Transducer
Power Gain (GTUmax) with frequency at Vgs = 0 V and Vds = 0.1 V [Bhattacharya11]
Fig. 3.17 (b) shows the variation of the Maximum Unilateral Transducer Power Gain
(GTUmax) with frequency. The frequency variation of GTUmax obtained using the
analytical results shows a high peak value of around 41 dB which matches closely
with the peak value of 37 dB obtained from device simulation.
The incorporation of the various parasitic elements in the equivalent circuit model has
resulted in accurate evaluation of scattering (S) parameters and power gains that
exhibit good agreement with the device simulation results as well as with the
experimental measurements.

Chapter 3
3.3 SUMMARY
The evaluation of the scattering (S) parameters for symmetric tied-gate geometry
InAlAs/InGaAs DG-HEMT is presented in this chapter which is followed by a
comprehensive RF performance assessment of the device in terms of the major figures
of merit including Unilateral Power Gain which determines the maximum power gain
achievable from the device, Maximum Frequency of Oscillation which determines the
ultimate frequency limit of the device and the Maximum Stable Gain (Gms) in terms of
which the stability performance of the device is judged.
In the equivalent circuit model employed for the analysis, the effect of the various
extrinsic elements including the parasitic resistances associated with the source, gate
and drain electrodes which become significant at ultra-high frequencies has also been
incorporated. Better correspondence between the results obtained using the analytical
model with the device simulation results as well as with the experimental
measurements has established the validity of the proposed analytical model
incorporating various extrinsic elements. Such a physics based model, thereby enables
a complete analysis of the device performance in terms of power gain and stability
which is inevitable for the exploration of its potential for low noise microwave
amplifier design.
This accurate scattering parameter based model is followed by a comprehensive
charge control based approach for the noise performance assessment of the device
which is very important for low noise millimeter-wave frequency applications.

Chapter 3
3.4 REFERENCES
[ATLAS09] ATLAS Device Simulator, SILVACO International, 2009.
[Berroth90] M. Berroth, R. Bosch, “Broad-band determination of the FET small-signal

equivalent circuit”, IEEE Transactions on Microwave Theory and
Techniques, Vol. 38, no. 7, pp. 891-895, 1990.
[Bhattacharya10] M. Bhattacharya, J. Jogi, R.S. Gupta and M. Gupta, “Impact of Doping

concentration and Donor- layer thickness on the dc characterization of
symmetric Double-gate and Single-gate InAlAs/InGaAs/InP HEMT for
nanometer gate dimension-A comparison”, IEEE TENCON 2010
Conference Proceedings, pp. 134-139, 2010.
[Bhattacharya11] M. Bhattacharya, J. Jogi, R.S. Gupta and M. Gupta, “Scattering parameter

based modeling and simulation of symmetric tied-gate InAlAs/InGaAs
DG-HEMT for millimeter-wave applications”, Solid State Electronics,
Vol. 63, no. 11, pp. 149-153, 2011.
[Curtice84] W. R. Curtice and R. L. Camisa, “Self-Consistent GaAs FET Models for

Amplifier Design and Device Diagnostics”, IEEE Transactions on
Microwave Theory and Techniques, Vol. 32, no. 12, 1984.
[Dambrine88] G. Dambrine, A. Cappy, F. Heliodore and E. Playez., “A new method for

determining the FET small-signal equivalent circuit”, IEEE Transactions
on Microwave Theory and Techniques, Vol. 36, no. 7, pp. 1151-1159,
1988.
[Eskandarian88] A. Eskandarian, “Determination of the small signal parameters of an

AlGaAs/GaAs MODFET”, IEEE Transactions on Electron Devices, Vol.
35, no.11, pp. 1793-1801, 1988.
[Golio08] M. Golio, “RF and Microwave Passive and Active Technologies”, CRC
Press, 2008.
[Golio91] J.M. Golio, “Microwave MESFETs and HEMTs”, Artech House,1991.

Chapter 3
[Gonzalez84] G. Gonzalez, “Microwave Transistor Amplifiers: Analysis and Design”,

Prentice Hall, 1984.
[Gonzalez95] T. Gonzalez and D. Pardo, “Monte Carlo determination of the intrinsic

small-signal equivalent circuit of MESFETs”, IEEE Transactions on
Electron Devices., Vol. 42, no. 4, pp.605-607, 1995.
[Guru03] V. Guru, J. Jogi, M. Gupta, H.P. Vyas, R.S. Gupta, “An improved
intrinsic small-signal equivalent circuit model of delta-doped
AlGaAs/InGaAs/GaAs HEMT for microwave frequency applications”,
Microwave and Optical Technology Letters, Vol. 37, no. 5, pp. 376-379,
2003.
[Kasemsuwan] V. Kasemsuwan and M. A. El Nokali, "A microwave model for high

electron mobility transistors", IEEE Transactions on Microwave Theory
and Techniques, Vol. 45, no. 3, pp. 420-427, 1997.
[Ladbrooke89] P.H. Ladbrooke, “MMIC Design: GaAs FETs and HEMTs”, Artech
House, London, 1989.
[Liao86] S.Y. Liao, “Microwave Circuit Analysis and Amplifier Design”, Prentice
Hall, 1986.
[Liechti76] C. A. Liechti, Microwave Field-Effect Transistors-1976, IEEE

Transactions on Microwave Theory and Techniques, Vol. 24, no. 6, pp.
279-300, 1996.
[Mahon92] S.J. Mahon, D.J. Skellern and F. Green, “A Technique for Modelling S-
parameters for HEMT Structures as a Function of Gate Bias”, IEEE
Transactions on Microwave Theory and Techniques, Vol. 40, no. 7, pp.
1430-1440, 1992.
[Nagatomo93] K. Nagatomo, Y. Daido, M. Shimizu and N. Okubo, “GaAs MESFET

Characterization Using Least Squares Approximation by Rational
Functions”, IEEE Transactions on Microwave Theory and Techniques,
Vol. 41, no. 2, pp. 199-205, 1993.

Chapter 3
[Pozar05] D.M. Pozar, “Microwave Engineering”, John Wiley & Sons, Inc., 2005.
[Roblin87] P. Roblin, S. Kang, A. Ketterson and H. Morkoc, “Analysis of MODFET

Microwave Characteristics”, IEEE Transactions on Electron Devices,
Vol. 34, no. 9, pp. 1919-1928, 1987.
[Shirakawa95] K. Shirakawa, H. Oikawa. T. Shimura, Y. Kawasaki, Y. Ohashi, T. Saito

and Y. Daido, “An Approach to Determining an Equivalent Circuit for
HEMT’s”, IEEE Transactions on Microwave Theory and Techniques,
Vol. 43, no. 3, pp. 499-503, 1995.
[Vasallo07] B.G. Vasallo , N.Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T.

Gonzalez , D. Pardo, and J. Mateos, “Comparison Between the Dynamic
Performance of Double- and Single- Gate InP Based HEMTs”, IEEE
Transactions on Electron Devices, Vol.54, no. 11, 2007.
[Vasallo08] B.G. Vasallo , N.Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T.

Gonzalez , D. Pardo, and J. Mateos, “Comparison Between the Noise
Performance of Double- and Single- Gate InP Based HEMTs”, IEEE
Transactions on Electron Devices, Vol.55, no. 6 , pp. 1535-1540, 2008.
[Wichmann04] N. Wichmann ,I. Duszynski, S. Bollaert, X. Wallart, J. Mateos and A.

Cappy, “100nm InAlAs/InGaAs Double-Gate HEMT using transferred
substrate”, IEEE International Electron Devices Meeting, pp. 1023-1026,
2004.
[Yanagawa96] S. Yanagawa, H. Ishihara and M. Ohtomo, “Analytical Method for

Determining Equivalent Circuit Parameters of GaAs FET’s”, IEEE
Transactions on Microwave Theory and Techniques, Vol. 44, no. 10,
1996.

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Chapter 3

Scattering parameter based Modeling and

Therefore, for a more extensive analysis of the performance of InAlAs/InGaAs DG-

3.1.1 Scattering (S) Parameter Measurement at Microwave

Fig. 3.01. Two Port Network Representation

V1   Z11 Z12   I1   I1  Y11 Y12  V1 

Hybrid (H) Parameters Chain (ABCD) Parameters

V1   H11 H12   I1  V1   A B   V2 

An attempt to measure the H, Y, Z or ABCD parameters of the device directly at

Fig. 3.02. Two Port Network for S-Parameters

b1   S11 S12   a1 

Input Reflection Coefficient ( S11 ) Reverse Transmission Coefficient ( S12 )

Forward Transmission Coefficient ( S21 ) Output Reflection Coefficient ( S22 )

Fig. 3.03. Scattering Parameters

3.1.2 Microwave Amplifier Design And Power Gains

(a) Block diagram

(b) Signal Flow Diagram

3.1.2.1 Transducer Power Gain (GT)

Therefore, the forward transmission coefficient (S21) determines the maximum

The term 2 (denoted as GS) and the term 2 (denoted as GL) in

Therefore, Gs represents the degree of matching or mismatch between ΓS and S11.

3.1.2.2 Maximum Available Power Gain (Gamax) and Maximum

with ∆ = S11 S22 − S12 S21 < 1

For a microwave amplifier to be unconditionally stable, K>1 with ∆ <1

3.1.2.3 Operating Power Gain (GP)

3.1.2.4 Maximum Unilateral Power Gain (GU)

Maximum Frequency of Oscillation (fmax) is evaluated as the frequency at which the

3.2 SCATTERING PARAMETER BASED MODELING APPROACH

circuits in terms of scattering (S) parameters is more relevant.

3.2.1 Development of Small Signal Equivalent Circuit For

Fig. 3.05. Extrinsic small-signal equivalent circuit model for SG-HEMT

where, fT is Unity Gain cut-off frequency defined in terms of transconductance (gm)

; r1 = ( Rg + Rs + Ri ) ⋅ g d and r2 = 2π Rg Cgd (3.11)

3.2.2 Evaluation of Short- Circuit Admittance (Y) Parameters

Input Admittance y11

Reverse Transfer Admittance y12

Forward Transfer Admittance y21

Output Admittance y22

(a) 0.01 (b) 0.18

100 Monika Bhattacharya

(a) 0.13 (b) 0.16

Monika Bhattacharya 101

(b) 0.16 (c) 0

102 Monika Bhattacharya

3.2.3 Evaluation of Extrinsic Scattering (S) Parameters

Experimental measurement of S-parameters can be performed with great accuracy at

Monika Bhattacharya 103

104 Monika Bhattacharya

s11int s12int  G Intrinsic D

 z11int +R s +R g +jωLs z12int +R s +jωLs  Rg

 z11ext +jωLg z12ext  G Lg Rg

Monika Bhattacharya 105

0.4 -0.6 Re( S22 )

0.1 line-model 0.1

106 Monika Bhattacharya

higher achievable power gain.

0.12 -0.12 0.8

Monika Bhattacharya 107

108 Monika Bhattacharya

Monika Bhattacharya 109

110 Monika Bhattacharya

[ATLAS09] ATLAS Device Simulator, SILVACO International, 2009.

[Berroth90] M. Berroth, R. Bosch, “Broad-band determination of the FET small-signal