15h00 OMMIC - F LECOURT PDF

All rights reserved © 2018 OMMIC
OMMIC GaN Technology

D01GH GaN on HR-Si(111)
Confidential Information GaN for Microwave Applications – March 22th 2018 1

Outline
• Overview of OMMIC processes

• Keys to success for GaN
• D01GH Process
• Electrical Performances & Guaranteed PCM
• D01GH MMICs
• Development of new GaN Process

Overview
OMMIC Processes
Since 2016, OMMIC proposes a new process based on GaN/Si : D01GH

Overview
• What is (not) OMMIC GaN :
• Replacement of Si solutions to improve the power efficiency

• Replacement of LDMOS solutions

• 0.5µm high power FETS or powerbars
• Rectifier Schottky diodes
• S, L, C, (X) band very high power amplifiers

Overview
Objective : Replace GaAs/InP technology with GaN technology

Improve output power and robustness of microwave and

millimeter-wave circuits with the same performances
Overview
Objective : Replace GaAs/InP technology with GaN technology

Improve output power and robustness of microwave and

millimeter-wave circuits with the same performances
Keys to success
Why OMMIC GaN on Si

technology is the best one ?

Keys to success
• Epitaxial structure
• In situ passivation to avoid trapping / memory effects
• Thin AlN barrier to mitigate short channel effect
• AlGaN back barrier to improve electron confinement
1a – in-situ passivation 1b – thin AlN barrier layer
GaN n++ GaN n++

GaN channel
AlGaN buffer 1c – AlGaN back barrier
HR-Si(111) substrate

Keys to success
• Technological structure
• Short gate length and short gate-source distance (250nm) to
increase RF performances
• Regrown ohmic contact to minimize access resistance
(Rc < 0.1 ohm.mm and RON < 1 ohm.mm)
2 – Short gate length and

short gate-source distance 3 – Regrown ohmic contact
GaN n++ GaN n++

GaN channel
AlGaN buffer
HR-Si(111) substrate

OMMIC D01GH Process
Via holes (Bosch process), air-bridges, NiCr & GaN resistors, SiN &
SiO2 MIM capacitors to allow mm-wave designs.
No metal layer of passive components directly on substrate.

OMMIC D01GH Process
SEM observation of a 8*50µm GaN HEMT (end of process)

OMMIC D01GH Process
SEM observation of a MIM capacitor (end of process)

OMMIC D01GH Process
SEM observation of a NiCr resistor (end of process)

OMMIC D01GH Process
SEM observation of via-holes (back side process)

Electrical Performances
OMMIC D01GH main characteristics


OMMIC D01GH electrical characteristics

Current vs Voltage characteristics (2*50µm GaN HEMT)


Transconductance characteristics (2*50µm GaN HEMT)


Breakdown Voltage characteristics (2*50µm GaN HEMT)

PCM and Guarantees
• OMMIC delivers wafers with electrical properties guaranteed by the measurement

of specific test modules (PCM).
• A Process Control Monitor (PCM) is a group of test modules fabricated on the wafer
at the same time as the circuits.
• Nine identical PCM sites are uniformly distributed across the wafer.
• Each electrical parameter is measured on 9 sites over a wafer.

• An electrical parameter is "good" if 7 measurements or more (out of 9) meet the
specifications.
• The wafer is released if all guaranteed electrical parameters are "good".
PCM and Guarantees
List of guaranteed PCM patterns Example of PCM pattern repeated 9

times across the wafer

PCM and Guarantees
Description of some guaranteed PCM modules


PCM and Guarantees


PCM and Guarantees


PCM and Guarantees


PCM and Guarantees


PCM and Guarantees


PCM and Guarantees
Summary list of guaranteed parameters

D01GH MMICs
• 3 stages
• Self bias, single 8V VDD
Example of X-band LNA • Series source feedback

• LR series stabilization
• 2.5x1.5 mm2
D01GH MMICs
X-band LNA test results

• Gain : 20 dB
CW on-wafer test
8V / 180mA • Noise figure : 1.2 dB
• P2dB : 21 dBm
• High robustness (40 dBc)
D01GH MMICs
• 3 stages
• 3.2 mm gate periphery for
the last stage
• VDD 12 V / 0.7 W/mm DC
Example of 6 W Ka-band PA (small signal)
• 4.5x3.5 mm2

D01GH MMICs
6 W Ka-band PA test results
CW in-package test
VDD 12V
• Gain > 20 dB
• Power : 37.5 dBm
• PAE : 30%

D01GH MMICs
6 W Ka-band PA Linearity (IM3)


D01GH MMICs
Linearity Comparison : OMMIC 6 W Ka-band PA vs QORVO TGA2594

@10dB back-off

D01GH MMICs
• 3 stages
• 3.2 mm gate periphery for the
last stage
• VDD 12 V & 15 V / 0.7 W/mm
DC (small signal)
• 4.5x3.5 mm2
Example of 10 W Ka-band PA

D01GH MMICs
10 W Ka-band PA test results

• Output Power : 40 dBm @12V

• PAE : 35%
• Gain : 20dB
• Output Power > 41 dBm @15V

D01GH MMICs
• Output Power : 37 dBm @12V

• PAE : 20%
• Gain : 30dB
Example of 40GHz PA
D01GH MMICs
Example of 30GHz T/R Chip

(LNA + PA + Switch)

D01GH MMICs
30 GHz T/R Chip test results
on-wafer pulsed test on-wafer pulsed test

Competition (IMS2017)
is 4.5dB

D01GH MMICs
16 W – 40 GHz PA test results
• Gain > 20 dB
• Power : 12.5 W @12V
• Power : 16 W @15V
• PAE : 30%
on-wafer test
pulsed mode

D01GH MMICs
4 W – 47 GHz PA test results
• Gain : 18 dB
• Power : 37.5 dBm
• PAE : 18%
on-wafer test
pulsed mode

Development of new GaN process
• D006GH GaN/Si(C) substrate

• 2 W/mm @94GHz with PAE of 12% and Gp of 4dB for GaN/Si
and Nfmin = 1.6 dB @40GHz
• 2.3 W/mm @94GHz with PAE of 15% and Gp of 6dB for GaN/SiC
and Nfmin = 1.4 dB @40GH

500 mW – 94 GHz D006GH PA (in progress)


Co-integration of Enhancement and Depletion Modes of

GaN-based transistors for next generation RF
communication circuits [ED01GH]

• Ids max ≈ 1 A/mm

• gm max ≈ 600 mS/mm
• Vt ≈ 0 V
• RON ≈ 1.3 Ω.mm
Current vs Voltage characteristics

(1*25µm GaN N-OFF HEMT)

END

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All rights reserved © 2018 OMMIC

OMMIC GaN Technology

Confidential Information GaN for Microwave Applications – March 22th 2018 1

• Overview of OMMIC processes

Confidential Information GaN for Microwave Applications – March 22th 2018 2

Since 2016, OMMIC proposes a new process based on GaN/Si : D01GH

Confidential Information GaN for Microwave Applications – March 22th 2018 3

• What is (not) OMMIC GaN :

• Replacement of Si solutions to improve the power efficiency

• Replacement of LDMOS solutions

Confidential Information GaN for Microwave Applications – March 22th 2018 4

Objective : Replace GaAs/InP technology with GaN technology

Improve output power and robustness of microwave and

Objective : Replace GaAs/InP technology with GaN technology

Improve output power and robustness of microwave and

Why OMMIC GaN on Si

Confidential Information GaN for Microwave Applications – March 22th 2018 7

1a – in-situ passivation 1b – thin AlN barrier layer

GaN n++ GaN n++

AlGaN buffer 1c – AlGaN back barrier

Confidential Information GaN for Microwave Applications – March 22th 2018 8

2 – Short gate length and

GaN n++ GaN n++

Confidential Information GaN for Microwave Applications – March 22th 2018 9

Confidential Information GaN for Microwave Applications – March 22th 2018 10

SEM observation of a 8*50µm GaN HEMT (end of process)

Confidential Information GaN for Microwave Applications – March 22th 2018 11

SEM observation of a MIM capacitor (end of process)

Confidential Information GaN for Microwave Applications – March 22th 2018 12

SEM observation of a NiCr resistor (end of process)

Confidential Information GaN for Microwave Applications – March 22th 2018 13

SEM observation of via-holes (back side process)

Confidential Information GaN for Microwave Applications – March 22th 2018 14

OMMIC D01GH main characteristics

Confidential Information GaN for Microwave Applications – March 22th 2018 15

OMMIC D01GH electrical characteristics

Current vs Voltage characteristics (2*50µm GaN HEMT)

Confidential Information GaN for Microwave Applications – March 22th 2018 16

OMMIC D01GH electrical characteristics

Transconductance characteristics (2*50µm GaN HEMT)

Confidential Information GaN for Microwave Applications – March 22th 2018 17

OMMIC D01GH electrical characteristics

Breakdown Voltage characteristics (2*50µm GaN HEMT)

Confidential Information GaN for Microwave Applications – March 22th 2018 18

• OMMIC delivers wafers with electrical properties guaranteed by the measurement

• Each electrical parameter is measured on 9 sites over a wafer.

List of guaranteed PCM patterns Example of PCM pattern repeated 9

Confidential Information GaN for Microwave Applications – March 22th 2018 20

Description of some guaranteed PCM modules

Confidential Information GaN for Microwave Applications – March 22th 2018 21

Description of some guaranteed PCM modules

Confidential Information GaN for Microwave Applications – March 22th 2018 22

Description of some guaranteed PCM modules

Confidential Information GaN for Microwave Applications – March 22th 2018 23

Description of some guaranteed PCM modules

Confidential Information GaN for Microwave Applications – March 22th 2018 24

Description of some guaranteed PCM modules

Confidential Information GaN for Microwave Applications – March 22th 2018 25