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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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 FCB20N60F — N-Channel SuperFET® FRFET® MOSFET
October 2013

FCB20N60F
N-Channel SuperFET® FRFET® MOSFET
600 V, 20 A, 190 m
Features Description
• 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
• Typ. RDS(on) = 150 m
utilizing charge balance technology for outstanding low on-
• Ultra Low Gate Charge (Typ. Qg = 75 nC) resistance and lower gate charge performance. This technology
• Low Effective Output Capacitance (Typ. Coss.eff = 165 pF) is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
• 100% Avalanche Tested
sequently, SuperFET MOSFET is very suitable for the switching
• RoHS Compliant power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications. Super-
Applications FET FRFET® MOSFET’s optimized body diode reverse recov-
ery performance can remove additional component and
• Lighting • AC-DC Power Supply improve system reliability.
• Solar Inverter

G G
S D2-PAK

S
MOSFET Maximum Ratings TC = 25oC unless otherwis noted
Symbol Parameter FCB20N60FTM Unit
VDSS Drain to Source Voltage 600 V
- Continuous (TC = 25oC) 20
ID Drain Current A
- Continuous (TC = 100oC) 12.5
IDM Drain Current - Pulsed (Note 1) 60 A
VGSS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ
IAR Avalanche Current (Note 1) 20 A
EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns
(TC = 25oC) 208 W
PD Power Dissipation
- Derate above 25oC 1.67 W/oC
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose, oC
TL 300
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter FCB20N60FTM Unit
RJC Thermal Resistance, Junction to Case, Max. 0.6
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 oC/W
RJA 2
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCB20N60F Rev. C1
 FCB20N60F — N-Channel SuperFET® FRFET® MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCB20N60F FCB20N60FTM D2-PAK 330mm 24m 800

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
VGS = 0 V,ID = 250 A, TC = 25oC 600 - - V
BVDSS Drain to Source Breakdown Voltage
VGS = 0 V,ID = 250 A, TC = 150oC - 650 - V
BVDSS Breakdown Voltage Temperature
ID = 250 A, Referenced to 25oC - 0.6 - V/oC
/ TJ Coefficient
BVDS Drain-Source Avalanche Breakdown
VGS = 0 V, ID = 20 A - 700 - V
Voltage
VDS = 600 V, VGS = 0 V - - 1
IDSS Zero Gate Voltage Drain Current A
VDS = 480 V, VGS = 0 V, TC = 125oC - - 10
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 A 3.0 - 5.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 0.15 0.19 
gFS Forward Transconductance VDS = 40 V, ID = 10 A - 17 - S

Dynamic Characteristics
Ciss Input Capacitance - 2370 3080 pF
VDS = 25 V, VGS = 0 V
Coss Output Capacitance - 1280 1665 pF
f = 1.0 MHz
Crss Reverse Transfer Capacitance - 95 - pF
Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz - 65 85 pF
Cosseff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 165 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 62 135 ns
tr Turn-On Rise Time VDD = 300 V, ID = 20 A - 140 290 ns
td(off) Turn-Off Delay Time RG = 25  - 230 470 ns
tf Turn-Off Fall Time (Note 4) - 65 140 ns
Qg(tot) Total Gate Charge at 10V VDS = 480 V, ID = 20 A, - 75 98 nC
Qgs Gate to Source Gate Charge VGS = 10 V - 13.5 18 nC
Qgd Gate to Drain “Miller” Charge (Note 4) - 36 - nC

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 20 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 20 A - - 1.4 V
trr Reverse Recovery Time VGS = 0 V, ISD = 20 A - 160 - ns
Qrr Reverse Recovery Charge dIF/dt = 100 A/s - 1.1 - C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 10 A, VDD = 50 V, RG = 25 , Starting TJ = 25C
3. ISD  20 A, di/dt  1200 A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics

©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FCB20N60F Rev. C1
 FCB20N60F — N-Channel SuperFET® FRFET® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2
10
VGS
Top : 15.0 V 2
10
10.0 V
8.0 V
7.0 V
6.5 V

ID , Drain Current [A]

ID, Drain Current [A]

6.0 V
1
10 Bottom : 5.5 V
o
10
1
150 C

o
25 C
o
-55 C
0
10 0
* Notes : 10
1. 250s Pulse Test * Note:
o 1. VDS = 40V
2. TC = 25 C
2. 250s Pulse Test

-1 0 1
10 10 10 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
2
0.4 10
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

0.3
VGS = 10V 1
10
RDS(ON) [],

0.2

VGS = 20V
o o
0
150 C 25 C
0.1 10
* Notes :
1. VGS = 0V
o 2. 250s Pulse Test
* Note : TJ = 25 C
0.0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000 12
Ciss = Cgs + Cgd (Cds = shorted)
9000 Coss = Cds + Cgd VDS = 100V
Crss = Cgd 10
8000
VDS = 250V
VGS, Gate-Source Voltage [V]

VDS = 400V
7000
8
Capacitance [pF]

6000 Coss
5000 6
* Notes :
1. VGS = 0 V
4000
Ciss 2. f = 1 MHz
4
3000

2000
2
1000 Crss * Note : ID = 20A

0 0
-1 0 1
10 10 10 0 10 20 30 40 50 60 70 80

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FCB20N60F Rev. C1
 FCB20N60F — N-Channel SuperFET® FRFET® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5

RDS(ON), (Normalized)
1.1
BVDSS, (Normalized)

2.0

1.0 1.5

1.0
* Notes :
0.9 1. VGS = 0 V
* Notes :
2. ID = 250 A 1. VGS = 10 V
0.5
2. ID = 20 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
o

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

25
Operation in This Area
10
2 is Limited by R DS(on)

20

100 s
ID, Drain Current [A]

ID, Drain Current [A]

1
10
1 ms
15
10 ms
0
DC
10
10

* Notes :
o
10
-1 1. TC = 25 C
o 5
2. TJ = 150 C
3. Single Pulse

-2
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

0
10
Response [oC/W]

D = 0 .5
Thermal Response

0 .2
* N o te s :
-1 o
10 1 . Z  JC (t) = 0 .6 C /W M a x.
0 .1
2 . D u ty F a c to r, D = t 1 /t 2
(t), Thermal

0 .0 5 3 . T J M - T C = P D M * Z  JC (t)

0 .0 2 PDM
ZJC (t),

t1
JC

t2
Z

10
-2 0 .0 1
s in g le p u ls e

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FCB20N60F Rev. C1
 FCB20N60F — N-Channel SuperFET® FRFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
IG = const.
3mA

Charge

Figure 13. Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time

©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FCB20N60F Rev. C1
 FCB20N60F — N-Channel SuperFET® FRFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FCB20N60F Rev. C1
 FCB20N60F — N-Channel SuperFET® FRFET® MOSFET
Mechanical Dimensions

TO-263 2L (D2PAK)

Figure 16. 2LD,TO263, Surface Mount

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
Dimension in Millimeters

©2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FCB20N60F Rev. C1
 FCB20N60F — N-Channel SuperFET® FRFET® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Sync-Lock™
AX-CAP®* FRFET® ® tm
®*
SM ®
BitSiC™ Global Power Resource PowerTrench
Build it Now™ GreenBridge™ PowerXS™
TinyBoost®
CorePLUS™ Green FPS™ Programmable Active Droop™
® TinyBuck®
CorePOWER™ Green FPS™ e-Series™ QFET
TinyCalc™
CROSSVOLT™ Gmax™ QS™
TinyLogic®
CTL™ GTO™ Quiet Series™
TINYOPTO™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyPower™
DEUXPEED® ISOPLANAR™ ™ TinyPWM™
Dual Cool™ Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™
TranSiC™
EfficentMax™ MegaBuck™ SignalWise™
TriFault Detect™
ESBC™ MICROCOUPLER™ SmartMax™
TRUECURRENT®*
® MicroFET™ SMART START™
SerDes™
MicroPak™ Solutions for Your Success™
Fairchild® MicroPak2™ SPM®
Fairchild Semiconductor® MillerDrive™ STEALTH™
MotionMax™ SuperFET® UHC®
FACT Quiet Series™
mWSaver ® SuperSOT™-3 Ultra FRFET™
FACT®
OptoHiT™ SuperSOT™-6 UniFET™
FAST®
OPTOLOGIC® SuperSOT™-8 VCX™
FastvCore™
OPTOPLANAR® SupreMOS® VisualMax™
FETBench™
SyncFET™ VoltagePlus™
FPS™
XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2010 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FCB20N60F Rev. C1
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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