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Diffusion Ion Implantation PDF
Diffusion Ion Implantation PDF
Uma Parthavi M
Dept. of Electrical Engineering,
Indian Institute of Technology Delhi.
Tutor: Prof. N Dasgupta
Contents
Doping
Two step doping process
Diffusion equipment & sources
Diffusion-Microscopic & Macroscopic point of view
Fick‟s Laws – solutions
Diffusivity
Influence of Electric Field, Defects
Oxidation Enhanced Diffusion
Ion Implantation
Implantation Basics
Ion implanter
Implantation profiles
Channeling
Damage annealing
Comparison between diffusion and ion implantation
References
Impurity atom
F DC
C
.F .( DC )
If D is a constant,
t
C 0 as t 0 for x 0
C as t 0 for x 0
C ( x, t )dx Q
A constant dose of dopants introduced in an infinite
-ve
medium
Dopants
Si Wafer
+ve
Si Wafer
DA is the effective diffusivity ,DA* is the normal equilibrium diffusivity under inert
conditions, fI is the fraction of dopants diffusing with interstitial mechanism, fv is the
fraction of dopants diffusing with vacancy-type mechanism, CI is the interstitial
concentration, CV is the vacancy concentration, CI* is the interstitial concentration at
equilibrium, CV* is the vacancy concentration at equilibrium
B I
1 2
K .E. qV mv
2
mv 2
qvB
r
2mV 1 Beam of B11(top) and B10 separated
r
q I Courtesy: Albion Systems
B is the magnetic field , proportional to the current I, V is the external voltage applied, m
is the mass of a ion, v is the velocity of an ion, q is the charge of an ion
Different ions can be chosen by varying the external voltage and the current
to the coils
28 Doping by Diffusion and Implantation Implantation
Ion Implanter
The radius of curvature is
proportional to square root of the
mass
Ions are further accelerated
depending on the requirements and
incident on the target
The implant dose is measured by
locating the sample at the end of a
„Faraday cup‟
1 I
Q dt
A q
I is the collected beam current, A is
the implant area, t is the integration
time and q is the charge on the ion
Gaussian 0,4
Range(um)
( x Rp ) 2 0,3 As
C ( x) Cp exp( )
2Rp 0,2
P
B
Q 2 RpCp 0,1
Straggle(um)
0,06
The 2D distribution is usually 0,05 As
0,04
assumed to be a product of 0,03
P
B
0,02
vertical and lateral 0,01
distribution 0
0 50 100 150 200 250
Energy(KeV)
Range and Straggle for As,P,B
Data from BYU’s Range and Straggle calculator
32 Implantation
Doping by Diffusion and
Implantation
Pearson Model
From: http://www.silvaco.com/tech_lib_TCAD/simulationstandard/1996/dec/a1/a1.html
37 Doping by Diffusion and Implantation Implantation
Ion stopping mechanism
Nuclear Stopping:
Collision of ions with lattice atoms
Depends on Ion energy
Tends to dominate at the end of the stopping process when ions have lost much of their
energy
Produces damage
Electronic Stopping:
Nonlocal electronic Stopping
Drag experienced by the ion in a dielectric medium; dissipative, does not alter the trajectory
Directly proportional to the ion velocity
Depends on ionization state of the ion
Local electronic Stopping
If the ion comes close enough to a lattice atom, momentum transfer due to e-transfer possible
Subtly alters the trajectory – minor compared to nuclear stopping
Depends on the ion velocity
Disadvantages: Disadvantages:
Limited to solid solubility Implant damage enhances
diffusion
Low dose predeps difficult
Additional cost of annealing
High temperature process
Dislocations may cause junction
Shallow junctions difficult leakage
Channeling