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1 s2.0 S0038092X98000474 Main PDF
1 s2.0 S0038092X98000474 Main PDF
41–47, 1998
© 1998 Elsevier Science Ltd
PII: S0038-092X(98)00047-4 All rights reserved. Printed in Great Britain
0038-092X/98 $—see front matter
Abstract—Ultrasonic agitation was applied during the chemical bath deposition of CdS thin films.
Ultrasonication resulted in a dramatic difference in surface morphology, growth rate, and optical proper-
ties of CdS films. There were virtually no colloidal particles adsorbed on the surface. The surface roughness
measured by atomic force microscopy was reduced by a factor of two. Band gap energy increased to
2.39 eV from 2.37 eV. X-ray patterns showed that the preferred orientation changed from
hexagonal(002)/cubic(111) to hexagonal(101). Optical transmission improved in the wavelength range
longer than 520 nm. The chemical reaction for CdS formation started at a lower temperature under
ultrasonication, and dense films were obtained even when the chemical composition of the aqueous
solution deviated far from the optimum conditions. © 1998 Elsevier Science Ltd. All rights reserved.
adsorb on the glass, then a heterogeneous nucle- through a liquid. This is called acoustic cavita-
ation and growth takes place by ionic exchange tion and it induces hot spots with a temperature
reaction with S2− ions (Pavaskar et al., 1977). of 5000 K and a pressure of 1.7×105 kPa within
This process is called an ion-by-ion process. In a very short time period.
this manner, CdS is deposited in the form of In some cases, ultrasound shows catalytic
transparent, uniform and adherent film. In con- properties in some chemical reactions (Suslick,
trast, CdS colloidal particles which precipitate 1995). Thus, ultrasonication is expected to make
homogeneously in the bulk solution adsorb differences in the chemical reactions as well as
randomly on the growing film, and thus form in the physical state of the films, such as the
opaque, non-uniform and poorly adherent ‘‘B- surface morphology and microstructure. This
quality’’ films ( Kaur et al., 1980; Lincot and study shows that ultrasonication has a tremen-
Ortega, 1992). This is called a colloid-by-colloid dous influence on the growth rate, optical prop-
process and usually happens at a later stage of erties and microstructure of CdS films and the
the deposition. chemical reaction of the CdS formation. We
High quality films, having less ‘‘B-quality’’ believe that similar results would be obtained if
characteristics, can be obtained by controlling ultrasonication were applied to any other
pH, the concentration of precursors and the electroless deposition system. To our best
reaction temperature. However, it is very diffi- knowledge, this is the first study of the effect of
cult and time-consuming to control the condi- ultrasonication on the deposition of thin films.
tions precisely, because the two reactions (ion-
by-ion and colloid-by-colloid ) are usually
taking place at the same time, no matter how
2. EXPERIMENT
well one controls the conditions (Ortega-Borges
and Lincot, 1993). Our study is focused on This study was carried out using aqueous
using external forces, such as ultrasonic agita- solutions of Cd salt (cadmium acetate) concen-
tion, that may eliminate the ‘‘B-quality’’ trations in the range of 0.004 to 0.016 , thio-
component. urea concentrations of 0.005 to 0.015 ,
Recently, ultrasonication was applied to vari- buffering agent NH Ac of 0.02 to 0.08 in
4
ous fields of science (Suslick, 1995). The forma- 1.74 ammonia solutions. The reaction temper-
tion, growth, and implosive collapse of bubbles ature was fixed between 80 and 83°C and the
occurs when ultrasounds having a frequency solution was stirred vigorously. The above con-
from around 15 kHz to tens of megahertz pass dition is known as an optimum condition for
Fig. 2. XRD patterns of CdS films deposited (a) without ultrasonication, (b) with ultrasonication; deposition time: 40 min.
producing high quality CdS films (Dhere Our CdS films had a mixed structure, as
et al., 1995). shown in the X-ray diffraction ( XRD) pattern
The deposition system ( Fig. 1) was a rectan- (Fig. 2). It seemed that the film consisted of an
gular bath (15 cm×10 cm×13 cm) with trans- fcc structure with a hint of hexagonal phase
ducers on two sides. The substrates were placed judging from the XRD intensities of the
at 2 cm away from the sides facing the trans- fcc(111) and hexagonal(002) peaks. However,
ducer (nominal frequency of 20 kHz and power under ultrasonication, a noticeable change in
of 132 W ). The solution was mixed at room the crystal structure occurred. A peak from the
temperature, then heated to the reaction temper- hexagonal structure, wurtzite, was observed at
ature while being stirred by an impeller. The about 27° corresponding to the (101) reflection,
substrates were indium–tin oxide (ITO) coated whereas the peak intensity of the cubic(111)
Corning@ 7059 glasses. The structure of CdS decreased to nil. The results indicate that, under
films was analyzed using an X-ray diffracto- ultrasonication, only the stable phase of CdS
meter (Rigaku 20B) equipped with a Cu Ka formed, probably due to the high temperature
target. Film thickness was measured by a profi- ( locally) induced by the ultrasonication.
lometer (Alpha-step@ surface profiler 200). We also examined the XRD pattern of colloi-
Surface morphology was observed using scan-
ning electron microscopy (FE-SEM, Hitachi
S-4200) and atomic force microscopy (AFM ).
The optical absorption data were obtained from
an HP-UV 8042 spectrophotometer.
Fig. 5. The surface morphology of CdS colloidal particles different Cd concentrations. Roughness
in the solution (a) without ultrasonication, (b) with ultra-
sonication. [CdAc ]: 0.008 ; [ Tu]: 0.005 ; [NH Ac]: increased rapidly with increasing Cd concen-
2 4
0.08 ; [NH OH ]: 0.4 ; deposition time: 40 min. tration, but there was much less increase under
4
ultrasonication. This result corresponds very
out ultrasonication revealed a larger structure well to the SEM images in Fig. 4.
which consisted of plate-like shapes ( Fig. 5(a)).
As might be expected, ultrasonication changed 3.4. Transmittance and band gap energy
the rough and plate-like surface of the particles UV spectrophotometer measurements were
to a smooth one. When observed at low magni- carried out on films of the same thickness of
fication, the size and shape of the particles 120 nm (Fig. 7). Higher transmittance was
formed under ultrasonication were more uni- observed from the films with ultrasonication in
form than the others. Judging from the results, the long wavelength range (over 520 nm).
the effect of ultrasonication is believed to be However, in the short wavelength region the
either promoting the nucleation of CdS or films made without ultrasonication showed
breaking large particles into pieces and their higher transmittance. With increasing film
agglomeration, both of which would result in thickness the difference diminished in the short
the microstructure shown in Fig. 5(b). wavelength region, but it widened in the long
As mentioned above, the XRD pattern of the wavelength region. Absorption of light in the
colloidal particles with ultrasonication showed longer wavelength region (l≥520 nm) is usually
poor resolution. We think that many small caused by crystalline defects such as grain
individual crystallites were agglomerated under boundaries and dislocations. High transmit-
ultrasonication, and thus the poorly resolved tance values obtained from the films with ultra-
XRD patterns were obtained. So, the SEM sonication imply that CdS grown under
images coincide well with the XRD results ultrasonication has a lower defect density, and
obtained from these particles. Figure 6 shows thus in turn may have better electrical proper-
the root-mean-square roughness measured by ties. Transmission of light in the shorter wave-
AFM on films that were deposited under length region (l<520 nm, i.e. above the band
46 J. Y. Choi et al.
gap energy) happens when the films are not (1 cm×1 cm×4.5 cm) as a reaction bath and a
thick or the thickness of the films is not uniform, cell breaker (Branson@ Sonifier 450) for apply-
i.e. if pinholes exist in the film. A low transmit- ing ultrasonication. Normally, CdS formation
tance of ultrasonicated film indicates that the starts at about 60°C, and then the CdS precipi-
film is of a denser and more uniform structure. tates cause the absorbance of the solution to
This result coincides well with the SEM results rise. Firstly, CdS solution was heated to 83°C
in Fig. 4. The fact that the difference in transmit- where the CdS films could be deposited uni-
tance decreased in the short wavelength region formly, and then the absorbance of the solution
but increased in the long wavelength region was observed with increasing time. The absor-
with increasing film thickness also supports the bance increased during the reaction over all the
argument given above. wavelength range ( Fig. 8(a)). As expected, the
From Fig. 7. we could obtain the plot of precipitation of CdS showed a shoulder at
absorbance of CdS films versus photon energy 520 nm (band gap energy of CdS). After
and the band gap energy of CdS by using 70 min, the absorbance no longer changed. We
Eqns (4) and (5), respectively. The plot of a2 applied ultrasonication to the solution while
versus Bv (photon energy) yields a straight heating the solution and fixed the temperature
pt
line with energy intercept of E (direct band of the solution at 83°C for 20 min ( Fig. 8(b)).
Gd
gap energy) if a direct transition is involved. The absorbance, at this point, was much higher
The relation between the intensity of incident than that measured after 30 min without ultra-
light I and the detected intensity I is represented sonication, and even that after 70 min (refer to
o
by an exponential form, where a is the absorp- Fig. 8(a)). Moreover, it was observed that a
tion coefficient and x is the penetration depth noticeable change in the shape of the absor-
of light. bance curves was shown in the wavelength
I=I exp(−ax) (4) region between 250 and 400 nm. This could be
o caused by the ultrasonic vibration itself (i.e. the
a3(Bv −E )1/2 (5) agitation of the solution may scatter the inci-
pt Gd
We observed that the band gap energy of CdS dent light).
increased to 2.39 eV from 2.37 eV due to Although we observed a change in absor-
ultrasonication. bance of a pure water when ultrasonication was
applied, the magnitude was not large enough to
3.5. Light absorbance of solution explain the above results. We think that the
Figure 8 shows the absorbance spectra mea- formation of quantum-size CdS particles, which
sured on the CBD solutions by the spectropho- would induce the absorption of light above the
tometer. We used a quartz cell band gap energy, may have influenced the shape
Fig. 8. Absorbance of the bulk chemical solution (a) during the reaction without ultrasonication, (b) with ultrasonication
at 83°C. In (a) the absorbance at 65°C is shown for comparison.
Properties of cadmium sulfide thin films 47
of the slope at short wavelength region (Hobson Dhere N. G., Waterhouse D. L., Sundaram K. B., Melendez
O., Parikh N. R. and Patnaik B. (1995) Studies on
et al., 1994). In the other words, ultrasonication chemical bath deposited cadmium sulphide films by
could accelerate the formation of CdS in the buffer solution technique. J. Mater. Sci. Mater. Electron
solution and make colloidal particles having 6, 52–59.
Hobson, R. A., Mulvaney, P. and Grieser, F. (1994) Forma-
quantum sizes. This interpretation suggests that tion of Q-state CdS colloids using ultrasound. J. Chem.
ultrasonication should have a catalytic action Soc. Chem. Commun. 823–824.
for the formation of CdS. Kaur I., Pandya D. K. and Chopra K. L. (1980) Growth
kinetics and polymorphism of chemically deposited CdS
films. J. Electrochem. Soc 127, 943–948.
4. CONCLUSIONS Kim D., Fahrenbruch A. L., Lopez-Otero A., Bube R. H.
and Jones K. M. (1994) Measurement and control of
We investigated the influence of ultrasonica- ion-doping-induced defects in cadmium telluride films.
J. Appl. Phys 75, 5, 2673–2679.
tion applied during the deposition of CdS films. Lanning B. R. and Armstrong J. H. (1992) Behavior for
The results observed are as follows: (i) compact solution grown CdS for thin-film solar cell technologies.
and transparent films were produced under Int. J. Solar Energy 12, 247–255.
Lincot D. and Ortega R. (1992) Chemical bath deposition
ultrasonication; (ii) uniform films were obtained of cadmium sulfide thin films. In situ growth and struc-
even under non-optimal conditions such as at tural studies by combined quartz crystal microbalance
excess precursor concentrations; (iii) deposition and electrochemical impedance techniques.
J. Electrochem. Soc 139, 1880–1889.
rates were reduced by suppressing the formation Lincot D. and Ortega R. (1994) High-resolution transmis-
of the ‘‘B-quality’’ component and the growth of sion electron microscopy study of chemically deposited
CdS grains; (iv) the formation of CdS could cadmium sulfide thin films from aqueous ammonia solu-
occur at low temperature in a short time, indi- tion. Philos. Mag. B: 68, 185–194.
Morris G. C., Tottszer A. and Das S. K. (1991) Comparison
cating a catalytic action of ultrasonication; (v) between evaporated and electrodeposited cadmium sul-
the grain size of the CdS films was reduced to fide for nCdS/pCdTe solar cells. Mater. Forum 15,
3–5 nm from 12–15 nm; (vi) the transmittance 164–170.
Ortega-Borges R. and Lincot D. (1993) Mechanism of
of CdS films at long wavelengths (≥520 nm) chemical bath deposition of cadmium sulfide thin films
became higher by the effect of ultrasonication; in the ammonia–thiourea system. J. Electrochem. Soc
(vii) the band gap energy increased from 2.37 eV 140, 3464–3473.
Park J. W., Ahn B. T., Im H. B. and Kim C. S. (1992)
to 2.39 eV. Photovoltaic properties of sintered CdS/CdTe solar cells
doped with Cu. J. Electrochem. Soc 139, 3351–3356.
Acknowledgement—This study was supported by the Korea
Science and Engineering Foundation under project Pavaskar N. R., Menezes C. A. and Sinha A. P. B. (1977)
No. 961-0804-029-2. Photoconductive CdS films by a chemical bath depos-
ition process. J. Electrochem. Soc 124, 743–748.
Rieke P. C. and Bentjen S. B. (1993) Deposition of cadmium
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