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Solar Energy Vol. 64, Nos 1–3, pp.

41–47, 1998
© 1998 Elsevier Science Ltd
PII: S0038-092X(98)00047-4 All rights reserved. Printed in Great Britain
0038-092X/98 $—see front matter

PROPERTIES OF CADMIUM SULFIDE THIN FILMS DEPOSITED BY


CHEMICAL BATH DEPOSITION WITH ULTRASONICATION
JUN YOUNG CHOI,* KANG-JIN KIM,** JI-BEOM YOO*** and DONGHWAN KIM*
* Division of Materials Science and Engineering, Korea University, Seoul, 136-701, South Korea
** Department of Chemistry, Korea University, Seoul, 136-701, South Korea
*** Department of Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746,
South Korea

Received 24 September 1997; revised version accepted 31 March 1998

Communicated by MAKOTO KONAGAI

Abstract—Ultrasonic agitation was applied during the chemical bath deposition of CdS thin films.
Ultrasonication resulted in a dramatic difference in surface morphology, growth rate, and optical proper-
ties of CdS films. There were virtually no colloidal particles adsorbed on the surface. The surface roughness
measured by atomic force microscopy was reduced by a factor of two. Band gap energy increased to
2.39 eV from 2.37 eV. X-ray patterns showed that the preferred orientation changed from
hexagonal(002)/cubic(111) to hexagonal(101). Optical transmission improved in the wavelength range
longer than 520 nm. The chemical reaction for CdS formation started at a lower temperature under
ultrasonication, and dense films were obtained even when the chemical composition of the aqueous
solution deviated far from the optimum conditions. © 1998 Elsevier Science Ltd. All rights reserved.

1. INTRODUCTION growth of CBD CdS films has been reported


constantly, the mechanism of CdS deposition
Thin film cadmium sulfide is a suitable n-type
does not seem to have been established. This is
semiconductor for a window layer in CdTe/CdS
because most of the studies were concerned with
heterojunction solar cells. Uniform and
optimizing the reaction conditions (e.g. pH,
transparent CdS films are needed to produce
temperature, solute concentrations) to produce
high efficiency solar cells. Various techniques,
CdS films that were adequate for solar cells.
such as vacuum evaporation ( Kim et al., 1994),
The aim of this study is to investigate the
spray deposition, electrodeposition (Morris
influence of ultrasonication on the CdS depos-
et al., 1991), screen printing (Park et al., 1992),
ition through observing the characteristic
chemical vapor deposition (Berry et al., 1992),
change of CdS films and to shed light upon the
RF sputtering (Tomita et al., 1994) and chemi- mechanism of the CdS deposition.
cal bath deposition (CBD) (Lanning and To produce CdS thin films, an alkaline solu-
Armstrong, 1992; Kaur et al., 1980; Lincot and tion of cadmium salt and a thiourea solution
Ortega, 1992; Rieke and Bentjen, 1993) have are prepared. The film growth takes place
been used to make CdS layers, but there are through ion-by-ion condensation of Cd2+ and
some problems in each method. For example, S2− ions on the substrate when Cd2+ and S2−
it is difficult to obtain stoichiometric CdS by ions exist over the solubility limit (Lincot and
the evaporation technique and a high temper- Ortega, 1992). Typical reaction steps involving
ature is required in spray deposition. cadmium acetate are as follows:
The CBD process, which produces CdS films
through reactions between Cd and S ions in an (NH ) CS+2OH−S2−+CN H +2H O
22 2 2 2
alkaline solution, is used to make high quality (1)
films which have few defects and a uniform
stoichiometry. CBD-grown CdS films also have Cd(NH )2+Cd2++4NH (2)
34 3
excellent electrical and optical properties.
Cd2++S2−CdS (3)
Moreover, the process is readily scalable to
large-area processing with low fabrication cost. Sulfide ions are released by the hydrolysis
The deposition process is controlled by the of thiourea, but Cd2+ ions form tetra-
chemical reaction kinetics in an ammonia solu- aminecadmium(II ) complex ions by combining
tion of cadmium salt ( Kaur et al., 1980). with NH in the range of pH 10–11 (Rieke and
3
Although research work that observed the Bentjen, 1993). These Cd(NH )2+ complexes
34
41
42 J. Y. Choi et al.

adsorb on the glass, then a heterogeneous nucle- through a liquid. This is called acoustic cavita-
ation and growth takes place by ionic exchange tion and it induces hot spots with a temperature
reaction with S2− ions (Pavaskar et al., 1977). of 5000 K and a pressure of 1.7×105 kPa within
This process is called an ion-by-ion process. In a very short time period.
this manner, CdS is deposited in the form of In some cases, ultrasound shows catalytic
transparent, uniform and adherent film. In con- properties in some chemical reactions (Suslick,
trast, CdS colloidal particles which precipitate 1995). Thus, ultrasonication is expected to make
homogeneously in the bulk solution adsorb differences in the chemical reactions as well as
randomly on the growing film, and thus form in the physical state of the films, such as the
opaque, non-uniform and poorly adherent ‘‘B- surface morphology and microstructure. This
quality’’ films ( Kaur et al., 1980; Lincot and study shows that ultrasonication has a tremen-
Ortega, 1992). This is called a colloid-by-colloid dous influence on the growth rate, optical prop-
process and usually happens at a later stage of erties and microstructure of CdS films and the
the deposition. chemical reaction of the CdS formation. We
High quality films, having less ‘‘B-quality’’ believe that similar results would be obtained if
characteristics, can be obtained by controlling ultrasonication were applied to any other
pH, the concentration of precursors and the electroless deposition system. To our best
reaction temperature. However, it is very diffi- knowledge, this is the first study of the effect of
cult and time-consuming to control the condi- ultrasonication on the deposition of thin films.
tions precisely, because the two reactions (ion-
by-ion and colloid-by-colloid ) are usually
taking place at the same time, no matter how
2. EXPERIMENT
well one controls the conditions (Ortega-Borges
and Lincot, 1993). Our study is focused on This study was carried out using aqueous
using external forces, such as ultrasonic agita- solutions of Cd salt (cadmium acetate) concen-
tion, that may eliminate the ‘‘B-quality’’ trations in the range of 0.004 to 0.016 , thio-
component. urea concentrations of 0.005 to 0.015 ,
Recently, ultrasonication was applied to vari- buffering agent NH Ac of 0.02 to 0.08  in
4
ous fields of science (Suslick, 1995). The forma- 1.74  ammonia solutions. The reaction temper-
tion, growth, and implosive collapse of bubbles ature was fixed between 80 and 83°C and the
occurs when ultrasounds having a frequency solution was stirred vigorously. The above con-
from around 15 kHz to tens of megahertz pass dition is known as an optimum condition for

Fig. 1. Schematic diagram of the CBD system used in this study.


Properties of cadmium sulfide thin films 43

Fig. 2. XRD patterns of CdS films deposited (a) without ultrasonication, (b) with ultrasonication; deposition time: 40 min.

producing high quality CdS films (Dhere Our CdS films had a mixed structure, as
et al., 1995). shown in the X-ray diffraction ( XRD) pattern
The deposition system ( Fig. 1) was a rectan- (Fig. 2). It seemed that the film consisted of an
gular bath (15 cm×10 cm×13 cm) with trans- fcc structure with a hint of hexagonal phase
ducers on two sides. The substrates were placed judging from the XRD intensities of the
at 2 cm away from the sides facing the trans- fcc(111) and hexagonal(002) peaks. However,
ducer (nominal frequency of 20 kHz and power under ultrasonication, a noticeable change in
of 132 W ). The solution was mixed at room the crystal structure occurred. A peak from the
temperature, then heated to the reaction temper- hexagonal structure, wurtzite, was observed at
ature while being stirred by an impeller. The about 27° corresponding to the (101) reflection,
substrates were indium–tin oxide (ITO) coated whereas the peak intensity of the cubic(111)
Corning@ 7059 glasses. The structure of CdS decreased to nil. The results indicate that, under
films was analyzed using an X-ray diffracto- ultrasonication, only the stable phase of CdS
meter (Rigaku 20B) equipped with a Cu Ka formed, probably due to the high temperature
target. Film thickness was measured by a profi- ( locally) induced by the ultrasonication.
lometer (Alpha-step@ surface profiler 200). We also examined the XRD pattern of colloi-
Surface morphology was observed using scan-
ning electron microscopy (FE-SEM, Hitachi
S-4200) and atomic force microscopy (AFM ).
The optical absorption data were obtained from
an HP-UV 8042 spectrophotometer.

3. RESULTS AND DISCUSSION


3.1. Structure of CdS films
CdS films, which were deposited on ITO
glass, can have either a hexagonal or a cubic
structure or, a mixed structure of the two,
depending on the preparation conditions ( Kaur
et al., 1980; Lincot and Ortega, 1993). The
Fig. 3. Film thickness versus deposition time, with and with-
hexagonal structure is the stable phase of CdS out ultrasonication. [CdAc ]: 0.004 ; [ Tu]: 0.005 ;
2
at room temperature. [NH Ac]: 0.02 ; [NH OH ]: 0.4 .
4 4
44 J. Y. Choi et al.

dal particles suspended in the solution.


Colloidal particles, produced under ultrasonica-
tion, had no sharp peaks, whereas well-defined
patterns were observed from the particles with
no ultrasonication.

3.2. Deposition rates


Figure 3 shows the thickness change of CdS
films with increasing deposition time. There are
two different regimes. In the short time regime
(regime A, before 20 min), two curves almost
coincide with each other, but with increasing
time the difference in growth rates widens
between the two conditions. The implication of
this result is that the ultrasonic agitation sup-
presses the growth of the ‘‘B-quality’’ compo-
nent in the film which consists of the adsorbed
colloidal particles. We believe that the ultrasonic
impact breaks the inherently loose connection
between the adsorbed particles and the surface
of the growing film. It should be noted that the
plateau, where the film no longer grows, begins
at a shorter time and a lower thickness
(~120 nm) under ultrasonication.
For solutions with higher Cd concentrations
this phenomenon became more apparent. With
increasing Cd concentration the thickness of the
CdS films became thicker up to 200–300 nm,
but no increase in thickness over 150 nm was Fig. 4. SEM images of CdS films (a) without ultrasonication,
(b) with ultrasonication. [CdAc ]: 0.008 ; [ Tu]: 0.005 ;
observed under ultrasonication. The growth rate 2
[NH Ac]: 0.08 ; [NH OH ]: 0.4 ; deposition time: 40 min.
can easily be controlled at any condition using 4 4
ultrasonication owing to the large plateau
region. Also, for a given thickness, such as CdS films deposited by the normal CBD system
100 nm, it takes much less time (~30 min) to was 12–15 nm, ultrasonication reduced it to
obtain high quality films without adsorbed CdS 3–5 nm. The results seem to indicate that ultra-
particles when ultrasonication is applied, sonication suppresses the growth of CdS grains
because with ultrasonication it is not necessary by the high pressures impacted on the growing
to slow down the growth rate for suppressing surface to make CdS films nanocrystalline
the homogeneous nucleation in the bulk solu- (Suslick, 1995). Also, it is possible that the
tion. Therefore, the throughput is enhanced. ultrasonication may have facilitated the nucle-
ation of CdS so that there was a uniform
3.3. Surface morphology nucleation throughout the substrate surface.
The most dramatic results of ultrasonic agita- To observe the influence of ultrasonication
tion appear in the microstructure of CdS. on the CdS microstructure more clearly, we
Figure 4 is the surface morphology of CdS films investigated CdS films deposited under higher
observed by SEM. Though the composition of Cd concentrations. There was little change in
the solution was optimized in terms of concen- the ultrasonicated films, whereas much higher
tration, pH, and temperature to obtain high densities of adsorbed particles and larger grains
quality films, it is noteworthy that CdS films were observed on films without ultrasonication.
formed under ultrasonic agitation showed an CdS films with uniform, compact and nano-
even more compact and smooth surface. Not sized grains could be obtained even under non-
only were there no adsorbed colloidal particles, optimal conditions.
shown as white boulders on the surface, but Figure 5 is the surface morphology of CdS
there was a remarkable difference in grain sizes colloidal particles precipitated homogeneously
and their uniformity. Whereas the grain size of in the bulk solution. CdS particles formed with-
Properties of cadmium sulfide thin films 45

Fig. 6. Surface roughness measured by AFM on CdS films


deposited under various CdAc concentrations.
2

Fig. 7. Transmittance of CdS films. Film thickness 1200 Å.

Fig. 5. The surface morphology of CdS colloidal particles different Cd concentrations. Roughness
in the solution (a) without ultrasonication, (b) with ultra-
sonication. [CdAc ]: 0.008 ; [ Tu]: 0.005 ; [NH Ac]: increased rapidly with increasing Cd concen-
2 4
0.08 ; [NH OH ]: 0.4 ; deposition time: 40 min. tration, but there was much less increase under
4
ultrasonication. This result corresponds very
out ultrasonication revealed a larger structure well to the SEM images in Fig. 4.
which consisted of plate-like shapes ( Fig. 5(a)).
As might be expected, ultrasonication changed 3.4. Transmittance and band gap energy
the rough and plate-like surface of the particles UV spectrophotometer measurements were
to a smooth one. When observed at low magni- carried out on films of the same thickness of
fication, the size and shape of the particles 120 nm (Fig. 7). Higher transmittance was
formed under ultrasonication were more uni- observed from the films with ultrasonication in
form than the others. Judging from the results, the long wavelength range (over 520 nm).
the effect of ultrasonication is believed to be However, in the short wavelength region the
either promoting the nucleation of CdS or films made without ultrasonication showed
breaking large particles into pieces and their higher transmittance. With increasing film
agglomeration, both of which would result in thickness the difference diminished in the short
the microstructure shown in Fig. 5(b). wavelength region, but it widened in the long
As mentioned above, the XRD pattern of the wavelength region. Absorption of light in the
colloidal particles with ultrasonication showed longer wavelength region (l≥520 nm) is usually
poor resolution. We think that many small caused by crystalline defects such as grain
individual crystallites were agglomerated under boundaries and dislocations. High transmit-
ultrasonication, and thus the poorly resolved tance values obtained from the films with ultra-
XRD patterns were obtained. So, the SEM sonication imply that CdS grown under
images coincide well with the XRD results ultrasonication has a lower defect density, and
obtained from these particles. Figure 6 shows thus in turn may have better electrical proper-
the root-mean-square roughness measured by ties. Transmission of light in the shorter wave-
AFM on films that were deposited under length region (l<520 nm, i.e. above the band
46 J. Y. Choi et al.

gap energy) happens when the films are not (1 cm×1 cm×4.5 cm) as a reaction bath and a
thick or the thickness of the films is not uniform, cell breaker (Branson@ Sonifier 450) for apply-
i.e. if pinholes exist in the film. A low transmit- ing ultrasonication. Normally, CdS formation
tance of ultrasonicated film indicates that the starts at about 60°C, and then the CdS precipi-
film is of a denser and more uniform structure. tates cause the absorbance of the solution to
This result coincides well with the SEM results rise. Firstly, CdS solution was heated to 83°C
in Fig. 4. The fact that the difference in transmit- where the CdS films could be deposited uni-
tance decreased in the short wavelength region formly, and then the absorbance of the solution
but increased in the long wavelength region was observed with increasing time. The absor-
with increasing film thickness also supports the bance increased during the reaction over all the
argument given above. wavelength range ( Fig. 8(a)). As expected, the
From Fig. 7. we could obtain the plot of precipitation of CdS showed a shoulder at
absorbance of CdS films versus photon energy 520 nm (band gap energy of CdS). After
and the band gap energy of CdS by using 70 min, the absorbance no longer changed. We
Eqns (4) and (5), respectively. The plot of a2 applied ultrasonication to the solution while
versus Bv (photon energy) yields a straight heating the solution and fixed the temperature
pt
line with energy intercept of E (direct band of the solution at 83°C for 20 min ( Fig. 8(b)).
Gd
gap energy) if a direct transition is involved. The absorbance, at this point, was much higher
The relation between the intensity of incident than that measured after 30 min without ultra-
light I and the detected intensity I is represented sonication, and even that after 70 min (refer to
o
by an exponential form, where a is the absorp- Fig. 8(a)). Moreover, it was observed that a
tion coefficient and x is the penetration depth noticeable change in the shape of the absor-
of light. bance curves was shown in the wavelength
I=I exp(−ax) (4) region between 250 and 400 nm. This could be
o caused by the ultrasonic vibration itself (i.e. the
a3(Bv −E )1/2 (5) agitation of the solution may scatter the inci-
pt Gd
We observed that the band gap energy of CdS dent light).
increased to 2.39 eV from 2.37 eV due to Although we observed a change in absor-
ultrasonication. bance of a pure water when ultrasonication was
applied, the magnitude was not large enough to
3.5. Light absorbance of solution explain the above results. We think that the
Figure 8 shows the absorbance spectra mea- formation of quantum-size CdS particles, which
sured on the CBD solutions by the spectropho- would induce the absorption of light above the
tometer. We used a quartz cell band gap energy, may have influenced the shape

Fig. 8. Absorbance of the bulk chemical solution (a) during the reaction without ultrasonication, (b) with ultrasonication
at 83°C. In (a) the absorbance at 65°C is shown for comparison.
Properties of cadmium sulfide thin films 47

of the slope at short wavelength region (Hobson Dhere N. G., Waterhouse D. L., Sundaram K. B., Melendez
O., Parikh N. R. and Patnaik B. (1995) Studies on
et al., 1994). In the other words, ultrasonication chemical bath deposited cadmium sulphide films by
could accelerate the formation of CdS in the buffer solution technique. J. Mater. Sci. Mater. Electron
solution and make colloidal particles having 6, 52–59.
Hobson, R. A., Mulvaney, P. and Grieser, F. (1994) Forma-
quantum sizes. This interpretation suggests that tion of Q-state CdS colloids using ultrasound. J. Chem.
ultrasonication should have a catalytic action Soc. Chem. Commun. 823–824.
for the formation of CdS. Kaur I., Pandya D. K. and Chopra K. L. (1980) Growth
kinetics and polymorphism of chemically deposited CdS
films. J. Electrochem. Soc 127, 943–948.
4. CONCLUSIONS Kim D., Fahrenbruch A. L., Lopez-Otero A., Bube R. H.
and Jones K. M. (1994) Measurement and control of
We investigated the influence of ultrasonica- ion-doping-induced defects in cadmium telluride films.
J. Appl. Phys 75, 5, 2673–2679.
tion applied during the deposition of CdS films. Lanning B. R. and Armstrong J. H. (1992) Behavior for
The results observed are as follows: (i) compact solution grown CdS for thin-film solar cell technologies.
and transparent films were produced under Int. J. Solar Energy 12, 247–255.
Lincot D. and Ortega R. (1992) Chemical bath deposition
ultrasonication; (ii) uniform films were obtained of cadmium sulfide thin films. In situ growth and struc-
even under non-optimal conditions such as at tural studies by combined quartz crystal microbalance
excess precursor concentrations; (iii) deposition and electrochemical impedance techniques.
J. Electrochem. Soc 139, 1880–1889.
rates were reduced by suppressing the formation Lincot D. and Ortega R. (1994) High-resolution transmis-
of the ‘‘B-quality’’ component and the growth of sion electron microscopy study of chemically deposited
CdS grains; (iv) the formation of CdS could cadmium sulfide thin films from aqueous ammonia solu-
occur at low temperature in a short time, indi- tion. Philos. Mag. B: 68, 185–194.
Morris G. C., Tottszer A. and Das S. K. (1991) Comparison
cating a catalytic action of ultrasonication; (v) between evaporated and electrodeposited cadmium sul-
the grain size of the CdS films was reduced to fide for nCdS/pCdTe solar cells. Mater. Forum 15,
3–5 nm from 12–15 nm; (vi) the transmittance 164–170.
Ortega-Borges R. and Lincot D. (1993) Mechanism of
of CdS films at long wavelengths (≥520 nm) chemical bath deposition of cadmium sulfide thin films
became higher by the effect of ultrasonication; in the ammonia–thiourea system. J. Electrochem. Soc
(vii) the band gap energy increased from 2.37 eV 140, 3464–3473.
Park J. W., Ahn B. T., Im H. B. and Kim C. S. (1992)
to 2.39 eV. Photovoltaic properties of sintered CdS/CdTe solar cells
doped with Cu. J. Electrochem. Soc 139, 3351–3356.
Acknowledgement—This study was supported by the Korea
Science and Engineering Foundation under project Pavaskar N. R., Menezes C. A. and Sinha A. P. B. (1977)
No. 961-0804-029-2. Photoconductive CdS films by a chemical bath depos-
ition process. J. Electrochem. Soc 124, 743–748.
Rieke P. C. and Bentjen S. B. (1993) Deposition of cadmium
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