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BC546A/B/C - BC547A/B/C-BC548A/B/C: NPN Silicon Amplifier Transistor
BC546A/B/C - BC547A/B/C-BC548A/B/C: NPN Silicon Amplifier Transistor
Mechanical Data
•
! Case: TO-92, Molded Plastic
•
! Polarity:indicated as below
D
C
C B
B E
E
STRAIGHT LEAD BENT LEAD
G BULK PACK AMMO PACK
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.45 4.70
C .500 --- 12.70 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
.095 .105 2.42 2.67 Straight Lead
G
.173 .220 4.40 5.60 Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC546 V(BR)CEO 65 — — V
(IC = 1.0 mA, IB = 0) BC547 45 — —
BC548 30 — —
Collector–Base Breakdown Voltage BC546 V(BR)CBO 80 — — V
(IC = 100 µAdc) BC547 50 — —
BC548 30 — —
Emitter–Base Breakdown Voltage BC546 V(BR)EBO 6.0 — — V
(IE = 10 mA, IC = 0) BC547 6.0 — —
BC548 6.0 — —
ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 10 µA, VCE = 5.0 V) BC546A/547A/548A — 90 —
BC546B/547B/548B — 150 —
BC546C/547C/548C — 270 —
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product fT MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 150 300 —
BC547 150 300 —
BC548 150 300 —
Output Capacitance Cobo — 1.7 4.5 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Input Capacitance Cibo — 10 — pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe —
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
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2.0 1.0
VCE = 10 V 0.9 TA = 25°C
hFE , NORMALIZED DC CURRENT GAIN
1.5
TA = 25°C
0.8 VBE(sat) @ IC/IB = 10
1.0 0.7
V, VOLTAGE (VOLTS)
0.8 0.6 VBE(on) @ VCE = 10 V
0.6 0.5
0.4
0.4 0.3
0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
2.0 1.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
0.4
2.8
0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
BC547/BC548
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
10 400
300
7.0 TA = 25°C
200
C, CAPACITANCE (pF)
5.0 Cib
VCE = 10 V
100
3.0 TA = 25°C
80
Cob
60
2.0
40
30
1.0 20
fă,
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
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1.0
hFE , DC CURRENT GAIN (NORMALIZED)
TA = 25°C
VCE = 5 V
TA = 25°C 0.8
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
2.0
0.6
VBE @ VCE = 5.0 V
1.0
0.4
0.5
0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
2.0 -1.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TA = 25°C
1.6 -1.4
20 mA 50 mA 100 mA 200 mA
1.2 -1.8
θVB for VBE
IC = -55°C to 125°C
0.8 -2.2
10 mA
0.4 -2.6
0 -3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
BC546
40
T CURRENT-GAIN - BANDWIDTH PRODUCT
TA = 25°C VCE = 5 V
500 TA = 25°C
20
C, CAPACITANCE (pF)
Cib
200
10
100
6.0 50
4.0 Cob
20
fă,
2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
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