Answers Should Be Written in QCAB Format Only.: Instructions

TEST CODE: 601
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Instructions
1. Answers should be written in QCAB format only.
2. All parts of a question should be answered together.
3. Give page numbers for all papers.
4. Answer sheets must be scanned in a single PDF file. Keep all these pages
are in sequence before scanning. For better scanning use CamsSanner
mobile app.
5. Answers must be clearly visible; otherwise answers will not be evaluated.
6. In first page of answer sheet student should write following details :
Name of the Student:
Login ID (User ID):
Test Code :
ACE Hall Ticket Number (or) Online Registration Number:
(Registration Number can found in your login profile page)
7. These candidates are not eligible for prize money; only center based
exam merit students are eligible for prize money.
8. Upload your answer sheet on or before 13-04-2020 (6 PM), otherwise
your answer sheets will not be evaluated.
9. Detailed solutions of each test will be uploaded on 14-04-2020 (6 PM).
1 TEST CODE: 601
ESE - 2020 Mains Test Series

Electronics & Telecommunication Engineering
Test-1 on Network Theory, Basic Electronics Engineering
Time Allowed: 3 Hours Maximum Marks: 300
INSTRUCTIONS
Please read each of the following instructions carefully before attempting questions:
Answers must be written in ENGLISH only.
There are EIGHT questions divided in TWO sections.
Candidate has to attempt FIVE questions in all.
Questions no. 1 and 5 are compulsory and out of the remaining, THREE are to be attempted choosing
at least ONE question from each section.
The number of marks carried by a question / part is indicated against it.
Wherever any assumptions are made for answering a question, they must be clearly indicated.
Diagrams / figures, wherever required, shall be drawn in the space provided for answering the question
itself.
Unless otherwise mentioned, symbols and notations carry their usual standard meanings.
Candidates should attempt all questions in the space prescribed under each question in the Question-
cum-Answer (QCA) Booklet. Any answer written outside the space allotted may not be given credit.
Attempts of questions shall be counted in sequential order. Unless struck off, attempt of a question shall
be counted even if attempted partly. Any page or portion of the page left blank in the Question-cum-
Answer Booklet must be clearly struck off.
Values of constants which may be required:
Electron charge = –1.610–19 Coulomb
Free space permeability = 410–7 Henry/m
Free space permittivity = (1/36)10–9 Farad/m
Velocity of light in free space = 3108 m/sec
Boltzmann constant = 1.3810–23 J/K
Planck’s constant = 6.62610–34 J-s
: 2 : ESE 2020 Mains Test Series
SECTION-A
01. (a) Two impedances R1  jX1 and R2 + jX2 are connected in parallel across a supply voltage
 
V = 100 2 sin314t  .The current flowing through two impedances are i1 = 10 2 sin 314t  
 4
 
and i2 = 10 2 sin 314t   respectively. Find the equation for instantaneous value of total
 4
current drawn from the supply. Also find values of R1, R2, X1 and X2. (12M)
(b) Define a tree of a graph and state its properties. Draw the correct graph of the network shown
below. I
R1 C
R3
V1  R2  V2
L
(12M)
(c) Calculate the current i2(t) in the coupled circuit shown below.
0.1H
i1(t) i2(t)
30sint +
~ i1 0.2H 0.2H i2
(12M)
(d) (i) Show that the ratio of maximum resistivity to intrinsic resistivity is expressed as
 max  n   p
 . (7M)
i 2 np
ACE Engineering Academy Hyderabad | Delhi | Pune | Bhubaneswar | Lucknow | Bengaluru | Chennai | Vijayawada | Vizag | Tirupati | Kukatpally| Kolkata | Ahmedabad | Kothapet
:3: E & TE
(ii) Calculate maximum resistivity (max) for Si at 300K and compare with intrinsic resistivity
(Assume ni = 1.51010cm-3, n = 1350 cm2/V-s & p = 480 cm2/V-s for Si)
(5M)
(e) (i) Typical discrete bipolar transistor have a large area example 500 µm × 500 µm, whereas
modern integrated devices may have an area as small as 0.5 µm × 0.2 µm. Assuming other
device parameters are identical, determine the difference between the base-emitter voltage
[i.e VBE int  VBE dis] of two such transistors for equal collector currents.
(8M)
(ii) In the circuit shown in the figure, the BJT has a current gain () of 50. For an emitter-base
voltage VEB = 600 mV, find the emitter-collector voltage VEC.
3V
60 k 500 
(4M)
02. (a) The pole-zero diagram of the driving point impedance function of network shown below.
At dc, the input impedance is resistive equal to 2 . Determine values of R, L, C
j
j4
R
Z C 
L 2 1 0
j4
(20M)
(b) For the network shown in fig., determine the current i(t) when the switch is closed at t = 0.
Assume that initial current in the inductor is zero.
5
r(t 3)  2H
i(t)
(20M)
(c) (i) The zener diode in the voltage-regulator circuit of given figure has a constant reverse
breakdown voltage VZ = 8.2V, for 75mA  iz  1A. If RL = 9, size Rs so that VL = VZ is
regulated to 8.2V , while Vb varies by 10 percent from its nominal value of 12V.
Rs
IS Iz IL +
+
+ +
Vb Vz VL
RL
– –
–
–
(6M)
(ii) The transistor is a Si device with a base current of 40A and ICBO = 0. If VBB = 6V,
RE = 1k and  = 80.
3k
C
iC
RB B +
V =15V
IB – CC
+ iE
VBB E
–
RE
Find (1) IEQ (2) RB (3) VCEQ (6M)
(iii) Explain the input and output characteristics of common emitter configuration with proper
circuit diagram. (8M)
:3: E & TE
03. (a) (i) Two impedances have same numerical value, are connected in series. If Z1 has p.f of
0.866 (lagging) and Z2 has p.f of 0.8 (leading) calculate pf of series combination.
(5M)
(ii) Find current in 3  resistance in the given circuit.
4
1A
3
2 5
(5M)
1A 1
(b) Determine the value of R1, R2 and R3 in terms of Ra, Rb, Rc in the network shown below.
(1)
Rc R1
Ra
R3 R2
(3) (2)
Rb
(10M)
(c) Find current ‘i’ in the network shown below by using Nodal analysis
5 i
2A 4V
3 +  3V
x
2 Vx
-
(10M)
(d) (i) Consider a process technology for which Lmin = 0.4 µm, tox = 8 nm, µ n = 450 cm2/V-s,
VT = 0.7V and ox = 3.9o, o = 8.854×1012 F/m.
,
Find Cox and K n . (5M)
W 8m
(ii) For a MOSFET with  . Calculate the value of VOV, VGS and VDS min needed
L 0.8m
to operate the transistor in the saturation region with a DC current I D = 100µA.
(5M)
o
(e) (i) A photon of wavelength 1500 A is absorbed by cold mercury vapour, and two other
photons are emitted. If one of these is the 1950 Ao line, what is the wavelength of the
second photon? (5M)
(ii) Fermi energy of copper is 7eV at room temperature. What is the total number of free
electrons/unit volume at the same temperature.
Assume h  6.63  10 34
J  s & electron mass(m)  9.11 31 kg  (5M)
(f). For an n-channel silicon FET with a = 3×104 cm and ND = 1015 /cm3.
Find
(i) The pinch-off voltage (5M)
1
(ii) The channel half-width for VGS  Vp and ID = 0 (5M)
2
(For silicon si=120, 0 = 8.854×10-12F/m, q =1.6×10-19C)
04. (a) (i) In the circuit shown in the fig. the switch S is closed at t = 0 and opened again at
t =  seconds. Prior to closing the switch at t = 0, v c1 = 10 V while L and C2 do not
have any stored energy. Find the voltages v c1 and v c 2 at t =  seconds. C1 = C2 = 1F,
L = 2H.
S L
+ +
C1 v c1 C2 v c2
 
(10M)
:3: E & TE
(ii) The network shown in the fig. is in steady state with S1 closed and S2 open.
At t = t1, S1 is opened and S2 is closed. Find current through capacitor for t  t1.
2 2H
S1 S2
10V 3H 1F
(15M)
(b) (i) Calculate the body-effect coefficient and the change in the threshold voltage due to an
applied source to body voltage. Consider an n-channel silicon MOSFET at T = 300K.
Assume the substrate is doped to NA = 3×1016 /cm3 and assume the oxide is silicon dioxide
with a thickness of t ox = 20 nm. Let VSB = 1V. (10M)
KT
(Assume ni = 1.5×1010 /cm3, s = 11.7o, o = 8.85×1014 F/cm &  25.9mV )
q
(ii) For the given amplifier circuit, find the input cut-off frequency. FET parameters are
gm = 4mA/V, Cgs = 4 pF, rds = 40k and Cgd = 2pF (5M)
VDD
RD = 10 k
RS = 50 
Vin ~
W
(iii) A MOSFET is biased at a drain current of 0.5mA. If µ nCox = 100µA/V2,  10 and
L
 = 0.1V-1. Calculate its small signal parameters. (5M)
(c) For the network shown below. Determine branch voltage ‘V’ by writing cut-set matrix
5℧
+V 
10A 5℧ 5℧ 10 ℧
(15M)
SECTION-B
05. (a) For the network shown find current i(t) when the switch is changed from position ‘1’ to ‘2’
at t = 0
40  1 t=0 60 
i
2
500V
 10i 0.4H
(12M)
(b) Obtain Norton’s equivalent network at terminals a - b.
100A 5 j3 
j5 
a
j2  j5 
b (12M)
(c) Find the value of dynamic impedance of the circuit shown below at a frequency of 500 kHz and
for bandwidth of operation equal to 20 kHz. The resistance of coil is 5 .
R L
(12M)
C
:3: E & TE
(d) (i) Derive the expression for total width of depletion region of an abrupt Si p - n junction
diode.
(ii) An abrupt Si p - n junction diode has N A = 1023/m3 on p - side and ND = 1021/m3 on
n-side. Calculate the value of the contact potential and the total width of the depletion
region under unbiased condition at 300K.(Given the intrinsic carrier concentration of Si
is 1.5×1016/m3 and relative permittivity is 11.8. )
(8+4 = 12M)
(e) The n-channel MOSFET in the circuit has VT = 1V and K = 0.8 mA/V2
VDD = 9V
RD= 2k
Vout
M1
VG =2.1V
Vin
(i) Assume that FET is operating in its saturation region. Show that ID≃1mA
(ii) Determine the trans-conductance gm
(iii) If Vin = 10mV, find drain current and output voltage.
(4+4+4 = 12M)
06. (a) A unit impulse applied to a two-terminal block box produces a voltage 0(t) = 2et  e3t.
Determine the terminal voltage when a current pulse of 1 A height and a duration of 2 seconds
is applied at the terminal.
+
iS(t) Block box v0(t)

(20M)
(b) Determine Z and Y parameters of the network shown in fig

2V3
1 I3
I1 2 I2
+
+ 3I2 +
+
V1 2 V3
I1 I2 V2

 
(20M)
(c) (i) Consider two P+N junction at T = 300oK reverse biased at VR = 5V. The impurity
concentration in junction A are N A= 1018 cm–3, ND = 1015 cm–3 and for junction B are
NA = 1018cm–3, ND = 1016cm–3. Find the ratio of the following parameter for junction A to
junction B. (VT = 26mV, ni = 1.51010cm–3 and  = 1.03610–12F/cm2)
(1) W (width)
(2) |E|max
(5+5 = 10M)
(ii) Explain the current components of a PNP transistor with proper diagram for forward
biased emitter junction and reverse-biased collector junction.
(10M)
07. (a) State and prove Norton’s Theorem (15M)
(b) Determine Z parameter for the network shown below
L L
1 2
C
1 2
C C
(15M)
:3: E & TE
(c) (i) Derive an expression for the Hall Voltage and Hall angle in a good conductor. Write at
least five applications of Hall Effect.
(ii) A specimen of a semiconductor has a Hall coefficient of 3.66  104 m3/C and a resistivity
of 8.93  10-3 -m. In a Hall effect experiment, a magnetic density of 0.8 T is used.
Find the Hall angle.
(10+5 = 15M)
 D Dn  2
(d) Show that the reverse saturation current I o is given by I o  Aq  p   ni and also as
 p D
L N Ln N 
A
b  1 1  n
I o  AVT  i2    where b  and i, n & p are conductivities of
1  b2  L p n Ln p  p
intrinsic, n-type & p-type regions respectively.

(15M)
08. (a) State and explain compensation theorem. In the network shown in fig., the resistance R is
changed from 4 to 2 . Verify the compensation theorem.
1
1V  R 8
(20M)
(b) (i) Determine the reverse saturation current of a silicon diode when it carries a current of
2mA and a forward voltage drop of 0.9V. (Take  = 1 and T = 400K)
(2M)
(ii) The circuit shown in figure (1) is a voltage regulator and all the diodes are identical and
have the characteristic of figure (2). Find the regulation of 'V 0' when 'Vb' increase from its
nominal value of 6V to the value 8V.
R=2k
+
+
Vb V0
–
–
Fig (1)
iD(in mA)
0.5 0.7 VD (in Volts)
Fig (2)
(6M)
(iii) Write short notes on special diodes

(1) Schottky diode
(2) Tunnel diode
(3) Light emitting diode (LED)
(4+4+4 = 12M)
:3: E & TE
(c) (i) The high frequency C-V characteristics of MOS capacitor is shown in figure. The Area of
device is 210–3 cm2. Metal work function is 4.1 eV and electron affinity of ‘Si’ is 4eV.
EC – EF = 0.9eV, r SiO2 = 3.9, (r)si = 12 and VT = 26 mV. If the doping concentration of
silicon substrate is 21016 cm–3 and measured flat band voltage is –0.9V. find
C(in pF)
200pF
20pF
V
VFB
(1) Ratio of tox/Wd

(2) ms
(3) Magnitude of fixed charge at oxide semiconductor interface.
(4) Threshold voltage with and without flat band voltage
(4+4+4+4 = 16M)
(ii) Consider uniformly doped GaAs junction at T = 300oK. At zero bias 25% of total space
charge region is to be in p-region. For a given value of V o = 1.5 V and ni = 1.8106 cm–3.
Find NA and ND.
(4M)
Detailed solutions for this test will be available on our website on 14-04-2020 at 6.00 pm.
https://ots.aceenggacademy.com/#/public-app
TEST CODE: 601
ESE-2020 MAINS TEST SERIES

Question Cum Answer Booklet (QCAB)
Electronics & Telecommunication Engineering Test-1 Paper-I
Time Allowed: 3 Hours Maximum Marks: 300
601 11-04-2020
INSTRUCTIONS TO CANDIDATES:
 This Question-cum- Answer (QCA) Booklet contains 68 pages. Immediately on receipt of
booklet, please check that this QCA booklet does not have any misprint or torn or missing
pages or items, etc. If so, get it replaced by a fresh QCA booklet.
 Candidates must read the instructions on this page and the following pages carefully before
attempting the paper.
 Candidates should attempt all questions strictly in accordance with the specified instructions
and in the space prescribed under each question in the booklet. Any answer written outside
the space allotted may not be given credit.
 Question Paper in detachable form is available at the end of the QCA booklet and can be
removed and taken by the candidates after conclusion of the exam
For filling by Examiners only

Question No. Page No. Marks
1 03
Signature of the Invigilator
2 10
3 17
4 25
5 31 Signature of the Student
6 40 Marks Secured
7 47 after Scrutiny
8 55
Grand Total
::1::
QUESTION PAPER SPECIFIC INSTRUCTIONS
Please read each of the following instructions carefully before attempting questions:
Answers must be written in ENGLISH only.
There are EIGHT questions divided in TWO sections.
Candidate has to attempt FIVE questions in all.
Questions no. 1 and 5 are compulsory and out of the remaining, THREE are to be attempted
choosing at least ONE question from each section.
The number of marks carried by a question / part is indicated against it.
Wherever any assumptions are made for answering a question, they must be clearly indicated.
Diagrams / figures, wherever required, shall be drawn in the space provided for answering the
question itself.
Unless otherwise mentioned, symbols and notations carry their usual standard meanings.
Candidates should attempt all questions in the space prescribed under each question in the
Question-cum-Answer (QCA) Booklet. Any answer written outside the space allotted may not be
given credit.
Attempts of questions shall be counted in sequential order. Unless struck off, attempt of a question
shall be counted even if attempted partly. Any page or portion of the page left blank in the
Question-cum-Answer Booklet must be clearly struck off.
Values of constants which may be required:

Electron charge = –1.610–19 Coulomb
Free space permeability = 4  10–7 Henry/m
Free space permittivity = (1/36)  10–9 Farad/m
Velocity of light in free space = 3108 m/sec
Boltzmann constant = 1.38 10–23 J/K
Planck’s constant = 6.626  10–34 J-s
DONT'S:
1. Do not write your Name or Roll number or Sr. No. of Question-Cum-Answer-Booklet anywhere inside this Booklet.
Do not sign the “Letter Writing” questions, if set in any paper by name, nor append your roll number to it.
2. Do not write anything other than the actual answers to the questions anywhere inside your Question-Cum-Answer-Booklet.
3. Do not tear off any leaves from your Question-Cum-Answer-Booklet. If you find any page missing, do not fail to notify the
Supervisor/invigilator.
4. Do not write anything on the Question Paper available in detachable form or admission certificate and write answers at the
specified space only.
5. Do not leave behind your Question-Cum-Answer-Booklet on your table unattended, it should be handed over to the
Invigilator after conclusion of the exam.
DO’S :
1. Read the instructions on the cover page and the instructions specific to this Question Paper mentioned on the next page of
this Booklet carefully and strictly follow them.
2. Write your Roll number and other particulars, in the space provided on the cover page of the Question-Cum-Answer-Booklet.
3. Write legibly and neatly. Do not write in bad/illegible handwriting.
4. For rough notes or calculations the last two blank pages of this booklet should be used. The rough notes should be crossed
through afterwards.
5. If you wish to cancel any work, draw your pen through it or write “Cancelled” across it, otherwise it may be valued.
6. Hand over your Question-Cum-Answer-Booklet personally to the invigilator before leaving the examination hall.
7. Candidates shall be required to attempt answer to the part/sub-part of a question strictly within the pre-defined space. Any
attempt outside the pre-defined space shall not be evaluated.
::2::
SECTION – A Candidates
must not
write on
01. (a) Two impedances R1  jX1 and R2 + jX2 are connected in parallel across a supply this margin
voltage V = 100 2 sin314t  .The current flowing through two impedances are
   
i1 = 10 2 sin 314t   and i2 = 10 2 sin 314t   respectively. Find the equation for
 4  4
instantaneous value of total current drawn from the supply. Also find values of R 1, R2, X1
and X2. (12M)
:: 3 ::
Candidates
must not
write on
this margin
(b) Define a tree of a graph and state its properties. Draw the correct graph of the network
shown below. I
R1 C
R3
V  R2  V
1 2
L
(12M)
:: 4 ::
Candidates
must not
write on
this margin
:: 5 ::
(c) Calculate the current i2(t) in the coupled circuit shown below. Candidates
must not
0.1H write on
i1(t) i2(t) this margin
30sint +~ i1 0.2H 0.2H i2


(12M)
:: 6 ::
(d) (i) Show that the ratio of maximum resistivity to intrinsic resistivity is expressed Candidates
must not
 max  n   p
as  . (7M) write on
i 2 np this margin
:: 7 ::
Candidates
must not
write on
this margin
(ii) Calculate maximum resistivity (max) for Si at 300K and compare with intrinsic
resistivity
(Assume ni = 1.51010cm-3, n = 1350 cm2/V-s & p = 480 cm2/V-s for Si)
(5M)
:: 8 ::
(e) (i) Typical discrete bipolar transistor have a large area example 500 µm × 500 µm, whereas Candidates
must not
modern integrated devices may have an area as small as 0.5 µm × 0.2 µm. Assuming write on
other evice parameters are identical, determine the difference between the base-emitter this margin
voltage [i.e VBE int  VBE dis] of two such transistors for equal collector currents. (8M)
(ii) In the circuit shown in the figure, the BJT has a current gain () of 50. For an emitter-
base voltage VEB = 600 mV, find the emitter-collector voltage VEC.
3V
60 k 500 
(4M)
:: 9 ::
02. (a) The pole-zero diagram of the driving point impedance function of network shown Candidates
must not
below. At dc, the input impedance is resistive equal to 2 . Determine values of R, L, C write on
j this margin
j4
R 1 
2 0
Z C
L j4
(20M)
:: 10 ::
Candidates
must not
write on
this margin
(b) For the network shown in fig., determine the current i(t) when the switch is closed at t = 0.
Assume that initial current in the inductor is zero.
5
r(t 3)  2H
i(t)
(20M)
:: 11 ::
Candidates
must not
write on
this margin
:: 12 ::
Candidates
must not
write on
this margin
(c) (i) The zener diode in the voltage-regulator circuit of given figure has a constant reverse
breakdown voltage VZ = 8.2V, for 75mA  iz  1A. If RL = 9, size Rs so that VL = VZ
is regulated to 8.2V , while Vb varies by 10 percent from its nominal value of 12V.
Rs
IS Iz IL +
+
+ +
Vb Vz VL
RL
– –
–
– (6M)
:: 13 ::
(ii) The transistor is a Si device with a base current of 40A and ICBO = 0. Candidates
must not
If VBB = 6V, RE = 1k and  = 80. 3k write on
this margin
C
iC
RB B +
VCC=15V
IB –
+ iE
VBB E
–
RE
Find (1) IEQ (2) RB (3) VCEQ (6M)
:: 14 ::
Candidates
must not
write on
this margin
(iii) Explain the input and output characteristics of common emitter configuration with
proper circuit diagram. (8M)
:: 15 ::
Candidates
must not
write on
this margin
:: 16 ::
03. (a) (i) Two impedances have same numerical value, are connected in series. If Z 1 has p.f of Candidates
must not
0.866 (lagging) and Z2 has p.f of 0.8 (leading) calculate pf of series combination. write on
(5M) this margin
:: 17 ::
(ii) Find current in 3  resistance in the given circuit. Candidates
must not
4
write on
1A this margin
3
2 5
1A 1
(5M)
(b) Determine the value of R1, R2 and R3 in terms of Ra, Rb, Rc in the network shown below.
(1)
Rc R1
Ra
R3 R2 (10M)
(3) (2)
Rb
:: 18 ::
Candidates
must not
write on
this margin
(c) Find current ‘i’ in the network shown below by using Nodal analysis
5 i
2A 4V
3 +  3Vx
2 Vx
-
(10M)
:: 19 ::
Candidates
must not
write on
this margin
:: 20 ::
(d) (i) Consider a process technology for which Lmin = 0.4 µm, tox = 8 nm, µ n = 450 cm2/V-s, Candidates
12 must not
VT = 0.7V and ox = 3.9o, o = 8.854×10 F/m. write on
this margin
,
Find Cox and K n . (5M)
W 8m
(ii) For a MOSFET with  . Calculate the value of VOV, VGS and VDS min
L 0.8m
needed to operate the transistor in the saturation region with a DC current I D = 100µA.
(5M)
:: 21 ::
(e) (i) A photon of wavelength 1500 Ao is absorbed by cold mercury vapour, and two other Candidates
o must not
photons are emitted. If one of these is the 1950 A line, what is the wavelength of the write on
second photon? (5M) this margin
:: 22 ::
(ii) Fermi energy of copper is 7eV at room temperature. What is the total number of free Candidates
must not
electrons/unit volume at the same temperature. write on
Assume h  6.63  10 34
J  s & electron mass(m)  9.11 31 kg  (5M) this margin
:: 23 ::
(f). For an n-channel silicon FET with a = 3×104 cm and ND = 1015 /cm3. Candidates
must not
Find write on
this margin
(i) The pinch-off voltage (5M)
1
(ii) The channel half-width for VGS  Vp and ID = 0 (5M)
2
(For silicon si=120, 0 = 8.854×10-12F/m, q =1.6×10-19C)
:: 24 ::
04. (a) (i) In the circuit shown in the fig. the switch S is closed at t = 0 and opened again at Candidates
must not
t =  seconds. Prior to closing the switch at t = 0, v c1 = 10 V while L and C2 do not write on
this margin
have any stored energy. Find the voltages v c1 and v c 2 at t =  seconds. C1 = C2 = 1F,
L = 2H.
S L
+ +
C1 v c1 C2 v c2
 
(10M)
:: 25 ::
(ii) The network shown in the fig. is in steady state with S 1 closed and S2 open. Candidates
must not
At t = t1, S1 is opened and S2 is closed. Find current through capacitor for t  t1. write on
this margin
2 2H
S1 S2
10V 3H 1F
(15M)
:: 26 ::
(b) (i) Calculate the body-effect coefficient and the change in the threshold voltage due to an Candidates
must not
applied source to body voltage. Consider an n-channel silicon MOSFET at T = 300K. write on
Assume the substrate is doped to NA = 3×1016 /cm3 and assume the oxide is silicon this margin
dioxide with a thickness of t ox = 20 nm. Let VSB = 1V. (10M)
KT
(Assume ni = 1.5×1010 /cm3, s = 11.7o, o = 8.85×1014 F/cm &  25.9mV )
q
:: 27 ::
(ii) For the given amplifier circuit, find the input cut-off frequency. FET parameters are Candidates
must not
gm = 4mA/V, Cgs = 4 pF, rds = 40k and Cgd = 2pF (5M) write on
VDD
this margin
RD = 10 k
RS = 50 
Vin ~
W
(iii) A MOSFET is biased at a drain current of 0.5mA. If µ nCox = 100µA/V2,  10 and
L
 = 0.1V-1. Calculate its small signal parameters. (5M)
:: 28 ::
(c) For the network shown below. Determine branch voltage ‘V’ by writing cut-set matrix Candidates
must not
5℧
write on
+ V  this margin
10A 5℧ 5℧ 10 ℧
(15M)
:: 29 ::
Candidates
must not
write on
this margin
:: 30 ::
Candidates
must not
write on
this margin
SECTION-B
05. (a) For the network shown find current i(t) when the switch is changed from position ‘1’ to ‘2’
at t = 0
40  1 t=0 60 
i
2
500V
 10i 0.4H
(12M)
:: 31 ::
Candidates
must not
write on
this margin
(b) Obtain Norton’s equivalent network at terminals a - b.
100A 5 j3 
j5 
a
j2  j5 
(12M)
b
:: 32 ::
Candidates
must not
write on
this margin
:: 33 ::
(c) Find the value of dynamic impedance of the circuit shown below at a frequency of 500 kHz Candidates
must not
and for bandwidth of operation equal to 20 kHz. The resistance of coil is 5 . write on
this margin
R L
(12M)
:: 34 ::
(d) (i) Derive the expression for total width of depletion region of an abrupt Si p - n junction Candidates
must not
diode. write on
this margin
(ii) An abrupt Si p - n junction diode has N A = 1023/m3 on p - side and ND = 1021/m3 on
n-side. Calculate the value of the contact potential and the total width of the depletion
region under unbiased condition at 300K.(Given the intrinsic carrier concentration of Si
is 1.5×1016/m3 and relative permittivity is 11.8. ) (8+4 = 12M)
:: 35 ::
Candidates
must not
write on
this margin
:: 36 ::
Candidates
must not
write on
this margin
:: 37 ::
Candidates
must not
write on
this margin
(e) The n-channel MOSFET in the circuit has VT = 1V and K = 0.8 mA/V2
VDD = 9V
RD= 2k
Vout
M1
VG =2.1V
Vin
(i) Assume that FET is operating in its saturation region. Show that ID≃1mA
(ii) Determine the trans-conductance gm
(iii) If Vin = 10mV, find drain current and output voltage.
(4+4+4 = 12M)
:: 38 ::
Candidates
must not
write on
this margin
:: 39 ::
06. (a) A unit impulse applied to a two-terminal block box produces a voltage 0(t) = 2et  e3t. Candidates
must not
Determine the terminal voltage when a current pulse of 1 A height and a duration of 2 write on
seconds is applied at the terminal. this margin
+
iS(t) Block box v0(t)
(20M)

:: 40 ::
Candidates
must not
write on
this margin
(b) Determine Z and Y parameters of the network shown in fig

2V3
1 I3
I1 2 I2
+
+ +
3I2
+
V1 2 V3
I1 I2 V2

 
(20M)
:: 41 ::
Candidates
must not
write on
this margin
:: 42 ::
Candidates
must not
write on
this margin
(c) (i) Consider two P+N junction at T = 300 oK reverse biased at VR = 5V. The impurity
concentration in junction A are NA= 1018 cm–3, ND = 1015 cm–3 and for junction B are
NA = 1018cm–3, ND = 1016cm–3. Find the ratio of the following parameter for junction A
to junction B. (VT = 26mV, ni = 1.51010cm–3 and  = 1.03610–12F/cm2)
(1) W (width)
(2) |E|max (5+5 = 10M)
:: 43 ::
Candidates
must not
write on
this margin
:: 44 ::
(ii) Explain the current components of a PNP transistor with proper diagram for forward Candidates
must not
biased emitter junction and reverse-biased collector junction. (10M) write on
this margin
:: 45 ::
Candidates
must not
write on
this margin
:: 46 ::
07. (a) State and prove Norton’s Theorem (15M) Candidates
must not
write on
this margin
:: 47 ::
Candidates
must not
write on
this margin
:: 48 ::
(b) Determine Z parameter for the network shown below Candidates
L L must not
1 2 write on
this margin
C
1 2 (15M)
C C
:: 49 ::
Candidates
must not
write on
this margin
(c) (i) Derive an expression for the Hall Voltage and Hall angle in a good conductor. Write
at least five applications of Hall Effect.
(ii)A specimen of a semiconductor has a Hall coefficient of 3.66  104 m3/C and a resistivity
of 8.93  10-3 -m. In a Hall effect experiment, a magnetic density of 0.8 T is used.
Find the Hall angle. (10+5 = 15M)
:: 50 ::
Candidates
must not
write on
this margin
:: 51 ::
Candidates
must not
write on
this margin
:: 52 ::
Candidates
must not
write on
this margin
 D Dn  2
(d) Show that the reverse saturation current I o is given by I o  Aq  p   ni and also as
 L p N D Ln N A 
b  1 1  n
I o  AVT  i2    where b  and i, n & p are conductivities of
1  b 2  L p n Ln p  p
intrinsic, n-type & p-type regions respectively. (15M)
:: 53 ::
Candidates
must not
write on
this margin
:: 54 ::
Candidates
must not
write on
this margin
08. (a) State and explain compensation theorem. In the network shown in fig., the resistance R is
changed from 4 to 2 . Verify the compensation theorem.
1
1V  R 8
(20M)
:: 55 ::
Candidates
must not
write on
this margin
:: 56 ::
Candidates
must not
write on
this margin
:: 57 ::
Candidates
must not
write on
this margin
(b) (i) Determine the reverse saturation current of a silicon diode when it carries a current of
2mA and a forward voltage drop of 0.9V. (Take  = 1 and T = 400K (2M)
:: 58 ::
(ii) The circuit shown in figure (1) is a voltage regulator and all the diodes are identical and Candidates
must not
have the characteristic of figure (2). Find the regulation of 'V 0' when 'Vb' increase from write on
its nominal value of 6V to the value 8V. this margin
R=2k iD(in mA)

+
+ 4
Vb V0
–
– 0.5 0.7 VD (in Volts)

Fig (1)
Fig (2)
(6M)
:: 59 ::
Candidates
must not
write on
this margin
(iii) Write short notes on special diodes

(1) Schottky diode
(2) Tunnel diode
(3) Light emitting diode (LED) (4+4+4 = 12M)
:: 60 ::
Candidates
must not
write on
this margin
:: 61 ::
Candidates
must not
write on
this margin
(c) (i) The high frequency C-V characteristics of MOS capacitor is shown in figure. The Area of
device is 210–3 cm2. Metal work function is 4.1 eV and electron affinity of ‘Si’ is 4eV.
EC – EF = 0.9eV, r SiO2 = 3.9, (r)si = 12 and VT = 26 mV. If the doping concentration
of silicon substrate is 21016 cm–3 and measured flat band voltage is –0.9V. find
C(in pF)
200pF
20pF
V
VFB
(1) Ratio of tox/Wd
(2) ms
(3) Magnitude of fixed charge at oxide semiconductor interface.
(4) Threshold voltage with and without flat band voltage
(4+4+4+4 = 16M)
:: 62 ::
Candidates
must not
write on
this margin
:: 63 ::
Candidates
must not
write on
this margin
:: 64 ::
(ii) Consider uniformly doped GaAs junction at T = 300oK. At zero bias 25% of total space Candidates
6 –3 must not
charge region is to be in p-region. For a given value of Vo = 1.5 V and ni = 1.810 cm . write on
Find NA and ND. (4M) this margin
:: 65 ::
FEEDBACK SHEET Candidates
must not
write on
this margin
(To be filled by examiner)
Rating on a scale of 1 to 10
(1 being the least and 10 being the highest)
1. Competency in understanding the question.
2. Competency in approach / methodology while answering
3. Competency in space management
4. Competency in drawing figures / circuits / block diagrams / graphs etc.
5. Competency in presentation and hand writing.
:: 66 ::
SPACE FOR ROUGH WORK Candidates
must not
write on
this margin
:: 67 ::
SPACE FOR ROUGH WORK Candidates
must not
write on
this margin
:: 68 ::

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TEST CODE: 601

ESE - 2020 Mains Test Series

Find (1) IEQ (2) RB (3) VCEQ (6M)

(b) Obtain Norton’s equivalent network at terminals a - b.

(b) Determine Z and Y parameters of the network shown in fig

07. (a) State and prove Norton’s Theorem (15M)

(b) Determine Z parameter for the network shown below

intrinsic, n-type & p-type regions respectively.

0.5 0.7 VD (in Volts)

(iii) Write short notes on special diodes

(1) Ratio of tox/Wd

ESE-2020 MAINS TEST SERIES

For filling by Examiners only

Values of constants which may be required:

30sint +~ i1 0.2H 0.2H i2

Find (1) IEQ (2) RB (3) VCEQ (6M)

dioxide with a thickness of t ox = 20 nm. Let VSB = 1V. (10M)

(b) Obtain Norton’s equivalent network at terminals a - b.

(ii) Determine the trans-conductance gm

(iii) If Vin = 10mV, find drain current and output voltage.

(b) Determine Z and Y parameters of the network shown in fig

intrinsic, n-type & p-type regions respectively. (15M)

R=2k iD(in mA)

– 0.5 0.7 VD (in Volts)

(iii) Write short notes on special diodes

(1) Ratio of tox/Wd

(3) Magnitude of fixed charge at oxide semiconductor interface.

(4) Threshold voltage with and without flat band voltage

(1 being the least and 10 being the highest)

1. Competency in understanding the question.

2. Competency in approach / methodology while answering

3. Competency in space management

4. Competency in drawing figures / circuits / block diagrams / graphs etc.

5. Competency in presentation and hand writing.

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