PHASE CONTROL THYRISTOR H30TB/TLXX

Symbol Characteristics Conditions TJ (0C) Value Unit

BLOCKING PARAMETERS
VRRM Repetitive peak reverse voltage 125 200-1600 V
Repetitive peak off-stage
VDRM 125 200-1600 V
voltage
IRRM Repetitive peak reverse current V = VRRM 125 15 mA
IDRM Repetitive peak off-state current V = VRRM 125 15 mA
dV/dT Rep. rate of change of voltage @ 67%VDRM 125 600 V/μS

CONDUCTING PARAMETERS
180 sine, 50H Z,
IF(AV) Average on-state current 30 A
TC = 850C
IRMS RMS on-state current 50 A
ITSM Surge on-state current Sine wave, 10mS 500 A
without reverse 125
I2 t I2 t voltage 1250 A 2S
On-state
VT Peak on-state voltage drop 125 1.72 V
current = 100A
V0 Threshold voltage 125 0.95 V
r0 On-state slope resistance 125 6.40 mΩ
dIG/dT = 1A/µS
di/dt Repetitive rate of rise of current 125 100 A/μS
VGK = 1V

TRIGGERING PARAMETERS

IGT Gate trigger current VD = 5V 25 100 mA

VGT Gate trigger voltage 25 2.50 V
IL Latching Current VD = 5V 25 300 mA
IH Holding Current VD = 5V 25 200 mA
Pulse width
PG –PEAK Maximum Peak Gate Power 30 W
100μSec
VFGM Maximum forward gate voltage 12 V
IFGM Maximum forward gate current 10 A

THERMAL & MECHANICAL PARAMETERS

Thermal impedance, 180

R TH (J-C) Junction to case 0.93 0
C/W
conduction, Sine
RTH (C-HK) Thermal impedance Case to heatsink 0.30 0
C/W
Maximum Permissible junction
TJ 125 0
C
temperature
TSTG Storage temperature range -40 - 125 0
C
F Mounting Torque 2 NM
For TB 30
W Weight gms
For TL 15

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H30TLXX

H30TBXX

All dimensions in mm

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On State Power Loss

70
65
60
55
50
45 0
120 180
Pt(av) - W

40
0
35 60
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40 45 50

It(av) - A

Maximum Permissible Case Temp

140

120

100
Tcase ( C)

80
0

60

40
0 0 0
60 120 180
20

0
0 5 10 15 20 25 30 35 40 45 50

It(av) A

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Max non repetitive Surge Current

600
550
500
450
400
350
Itsm - A

300
250
200
150
100
50
0
0.01 0.1 1 10
Time in Sec

Transient Thermal Impedance Junction to Case

0.9

0.8

0.7

0.6
Rth(j-c)

0.5

0.4

0.3

0.2

0.1

0
0.001 0.01 0.1 1 10

Time in Sec

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On State Characteristics

150
140
130
120
110
100
90
I t(av) - A

80
70
60
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5

Vt - V

Gate Trigger Characteristics

100

10
VGT
VG(V) - V

1 250C
PO(tp)
I GT 30 W
(0.1ms
I GD )
0.1
0.001 0.01 0.1 1 10 100

IG (av ) - A

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Ordering Information: -

H 30 TB / TL XX
Hirect make Thyristor IF(AV) = 30A TB – with a Pigtail VRRM = XX x 100
TL – with Lug e.g.12 * 100 =1200V

Hind Rectifiers Ltd reserves the right to change the specifications without
notice.

This datasheet specifies technical information for semiconductor devices but

promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.

Hind Rectifiers Ltd

Lake Road
Bhandup (West)
Mumbai – 400 078
Tel: - +91 22 2596 8027/28/29/31
Fax: - +91 22 2596 4114
E-mail: - marketing@hirect.com
Website: - www.hirect.com
June-2008

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