Classified abstracts 186-195
dependence on various evaporation conditions, are investigated. The
thermal annealing of films is studied.
M V Kurik and G A Sandul, (/krain Fiz Zh, 15 (3), 1970, 391-394 (in
Ukrainian).
30
186. Electrical characteristics of the surface of single-crystal films on
sapphire. (USSR)
Surface characteristics of hetero-epitaxial single-crystal silicon films
of n-p type, obtained by evaporation in vacuum at 1 x lo+ torr on
sapphire, are investigated with the aid of measurements of local con-
tact potential difference, field effect, and photoconductivity. The
band bending and surface trap concentration are estimated.
V S Lisenko et al, ilkrain Fir Zh, 15 (3), 1970,409-414 (in Ukrainian).
30
187. Optical properties of PbCl, thin films.
(USSR)
Optical properties of thin PbCI, films prepared by evaporation in
vacuum at IO+ torr on quartz substrates are investigated. Experi-
mental results are discussed.
N L Kramarenko et al, Ukrain Fiz Zh, 15 (3), 1970, 415-420 (in
Ukrainian).
30
188. Electron gun for evaporation of thin films.
(Yugoslavia)
The design of an electron gun, used for the vacuum deposition of thin
films of metals, alloys, semiconductors or dielectrics, is described.
Simplicity and high efficiency of the electron beam power used for
deposition are the most important characteristics of the design. A
ring cathode is used as an electron source. High voltage of up to 10
kV is applied for focusing the electron beam to a target diameter of
1 mm. At the highest electron beam current of 250 mA, it is possible
to obtain deposition temperatures up to 3800°C. Electron gun
characteristics are determined.
B Navinsek, Elektrotehniski Vestnik, 37 (l-3), 1970, 9-l 1 (in
Slovenian).
30
189. Arrangement for ionization of material evaporated by electron
beam. (USSR)
A vacuum system is described, in which a discharge in metal vapour is
used to enhance the degree of ionization. The arrangement consists of
a discharge chamber and electron beam evaporator. The metal vapour
is ionized by the electron beam used for evaporation and by acceler-
ated secondary electrons emitted on metal bombardment. A Penning
discharge is used to enhance the metal vapour ionization. The system
is pumped to 5 x 1O-Etorr and during evaporation the pressure is kept
below 1.5 x 10v5 torr. Characteristics of this system for copper as
evaporation material are given. The copper vapour plasma can also
be observed visually. Typical dependencies of the collector and dis-
charge currents on time are given. Discharge power dissipated on the
cathode is small with respect to the electron beam power. The deposi-
tion rate is therefore determined by electron beam parameters. It is
shown that at deposition rate below 100 A/set the arrangement
allows deposition of films uniformly bombarded by ions, on a sub-
strate of a few centimetres diameter, with ion current density of 50 to
100 /LA/cm2, and the ratio of ion to atom current of 0.5 per cent. The
copper films, 0.3 to 0.7 ,um thick, have 2 to 3 times higher adhesion to
substrate in comparison with those prepared without discharge. The
ion source can also be used for obtaining ohmic contacts to GaAs.
V P Belevskiy and V M Koptenko, Prib Tekh Eksper, Nr 4, July-Aug
1970, 188-190 (in Russian).
30
190. Limiting of tunnel current in Me-D-Bi,,Sb, junctions by capture
centres localized near the interface D-Bit,:,Sb,. (USSR)
Metal-dielectric-BiSb junctions are studied. W-shaped tunnelling
conductance curve of these junctions is attributed to the presence of
bismuth in the material of the upper electrode. The bismuth atoms
produce local energetic states near the surface of the dielectric layer,
penetrating into it during vacuum evaporation.
0 0 Galkin and 0 M Ianatev._ Ukrain Fiz Zh. 15 (3). 1970. 436-438
I
.,.
(in Ukrainian).
30
191. Diffusional coalescence of metal grains on nonmetal substrates.
(USSR)
Diffusional coalescence kinetics of gold grains deposited by a mole-
cular beam on NaCl crystal surface is investigated using an electron
microscope. It is found that electrically charged centres on the sub-
strate considerably influence the coalescence kinetics, Equilibrium
conditions of the charged metallic grains with a two-dimensional
146
adatom gas are analyzed, and features of the ensemble coalescence of
the charged grains are considered.
Ya E Geguzin et al, Fiz Tverd Tela, 12 (7), July 1970, 195331962 (in
Russian).
30
192. Technology for the batch manufacture hybrid thin film micro-
circuits. (Poland)
Vacuum evaporation technology for hybrid thin film microcircuits,
manufactured in small batches, is described. Properties of the variable
masking method are tested and compared with those of sequence
processing. Technological processes including ion etching, evapora-
tion of Ni-Cr alloy as resistors, SiO as dielectrics and protective
layers, Al as capacitor electrodes and Au as contact material, are
described together with pressure behaviour.
A Jurewicz, Elektronika, 11 (3), 1970, 107-l 11 (in Polish).
30
193. Peculiarities of tbe angular distribution of sputtered material from
single crystals bombarded by ions. (USSR)
The angular distribution of sputtered material under ion bombard-
ment in a broad range of incidence angle, was investigated for single
crystals. Single crystals of gold and gold-copper alloy, cut at the (110)
and (100) planes, were bombarded by argon ions with energy of 70
keV. Target temperature measured by a thermocouple were 400-
470°K during ion bombardment. Sputtered material was deposited
on a semicylindrical collector made of polyethylene film, 40 microns
thick. A pressure of 3 to 6 x lo-’ torr in the working region during
ion bombardment was maintained by a powerful pumping system
with nitrogen traps. Sputtering patterns were evaluated by visual
observation, optical density measurement of deposits by a micro-
photometer, or radiographic analysis. Target material release in the
directions (llO), (lOO), (211), (310), (Ill), (312), (411), (210), (332)
and (521) was observed and bands representing tracks of the (111) and
(100) planes were found. Relative suppression of material release in
the high index directions and at ion incidence angles approximating
to the transparent directions in the crystal, was observed. It is con-
cluded that the high energy of the bombarding ions, the high inci-
dence angles, the relatively low mass of the ions with respect to the
target atoms, and the use of the cylindrical collector, form the causes
of the patches of sputtered material observed with higher indices.
V E Dubmskiy and S Ya Lebedev, Fiz Tverd Tela, 12 (7), Ju/y 1970,
1906-1911 (in Russian).
31. EVACUATION AND SEALING
31
194. Investigation of structure of electron beams emitted from a
cathode torch in the initial phase of vacuum breakdown. (USSR)
Investigation of erosion traces on an anode surface in the initial state
of vacuum breakdown was carried out using the method of discharge
interruption. A pulse generator produced pulses with amplitude of
35 kV, pulse length of 100 nsec and pulse front of 1 nsec. Interruption
of the vacuum discharge was obtained using a vacuum discharge tube
with dielectric. Copper, aluminium and molybdenum electrodes were
tested. The relationship between the character of the erosion traces
on the anode and anode surface structure, was determined by thermal
etching of the anode surface in vacuum or by chemical etching.
Investigations were carried out in a uniform field with a vacuum gap
of 0.35 mm. Two types of erosion traces on the anode were observed:
one type has a form of circle; the other type has the shape of a torch.
It was found that the erosion traces are due to the electron beams
emitted from cathode torches formed at burst microedges. The erosion
traces of the torch type are formed, when the electron beams emitted
from the cathode torches are overlapped. It is concluded that the
cause of formation of many shallow craters on the anode is the non-
uniformity of anode surface properties.
G P Bazhenov et al, 1zv VUZ Fiz, Nr 8, 1970, 87-90 (in Russian).
31
195. Investigation of current rise on pulsed breakdown of millimeter
vacuum gaps. (USSR)
To elucidate the mechanism of vacuum breakdown and also to
explore the possibility of utilizing the initial state of vacuum break-
down in the technique of direct action nanosecond accelerators, the
time characteristics of vacuum breakdown of gaps of a few mm were
investigated. Experiments were performed in vacuum at 1 x 10m5torr,
reached with the aid of a mechanical pump, an oil diffusion pump and
two thermoelectric traps. The vacuum discharge chamber has a co-
axial structure. The dependence of the rise-time of the spark on the