Datasheet PDF

TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,

TIP107 (PNP)
TIP101, TIP102, TIP106 and TIP107 are Preferred Devices
Plastic Medium−Power
Complementary Silicon
Transistors http://onsemi.com
Designed for general−purpose amplifier and low−speed switching DARLINGTON 8 AMPERE

applications. COMPLEMENTARY SILICON
Features POWER TRANSISTORS
• High DC Current Gain − 60−80−100 VOLTS, 80 WATTS
hFE = 2500 (Typ) @ IC
= 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc MARKING
DIAGRAM
VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105
= 80 Vdc (Min) − TIP101, TIP106 4
= 100 Vdc (Min) − TIP102, TIP107
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC TO−220AB
CASE 221A TIP10xG
= 3.0 Adc
STYLE 1 AYWW
= 2.5 Vdc (Max) @ IC = 8.0 Adc 1
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors 2
3
• Pb−Free Packages are Available*
TIP10x = Device Code

x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use

and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

August, 2005 − Rev. 11 TIP100/D
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
TIP100, TIP101, TIP102,
TIP105 TIP106 TIP107
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Rating Symbol Unit
Collector − Emitter Voltage VCEO 60 80 100 Vdc
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Collector − Base Voltage
ÎÎÎÎÎÎÎ VCB 60 80 100 Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Emitter − Base Voltage
ÎÎÎÎ VEB 5.0 Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Collector Current − Continuous IC 8.0
ÎÎÎÎÎ
Base Current ÎÎÎÎÎÎÎÎÎ
− Peak
ÎÎÎÎÎ
ÎÎÎÎ IB
15
1.0
Adc
Adc
ÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C PD 80 W
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Derate above 25_C 0.64 W/_C
ÎÎÎÎÎ
Unclamped Inductive Load Energy (1) E 30 mJ
ÎÎÎÎÎ
Total Power Dissipation @ TA = 25_C PD 2.0 W
Derate above 25_C 0.016 W/_C
ÎÎÎÎÎ
Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎÎ
Characteristic Symbol Max Unit
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎÎ
Thermal Resistance, Junction−to−Ambient
RqJC
RqJA
1.56
62.5
_C/W
_C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ORDERING INFORMATION
Device Package Shipping
TIP100 TO−220 50 Units / Rail
TIP100G TO−220 50 Units / Rail
(Pb−Free)

(Pb−Free)
(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (1) VCEO(sus) Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0) TIP100, TIP105 60 −
TIP101, TIP106 80 −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ TIP102, TIP107 100 −
ÎÎÎÎÎ
ÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
TIP100, TIP105
TIP101, TIP106
ICEO
− 50
mAdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
− 50
(VCE = 50 Vdc, IB = 0) TIP102, TIP107 − 50
ÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎ
(VCB = 60 Vdc, IE = 0) ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
TIP100, TIP105
ICBO
− 50
mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
(VCB = 80 Vdc, IE = 0) TIP101, TIP106 − 50
(VCB = 100 Vdc, IE = 0) TIP102, TIP107 − 50
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 8.0 mAdc
ÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎ
ÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ hFE −
ÎÎÎÎÎ
(IC = 3.0 Adc, VCE = 4.0 Vdc) 1000 20,000
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
(IC = 8.0 Adc, VCE = 4.0 Vdc) 200 −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 3.0 Adc, IB = 6.0 mAdc) − 2.0
ÎÎÎÎÎ ÎÎÎÎÎÎÎ
(IC = 8.0 Adc, IB = 80 mAdc) − 2.5
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc
ÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − −
Output Capacitance
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ Cob pF
ÎÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP105, TIP106, TIP107 − 300
TIP100, TIP101, TIP102 − 200
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
TA TC
4.0 80
PD, POWER DISSIPATION (WATTS)
3.0 60
TC
2.0 40
1.0 20
TA
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
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3
5.0
VCC
ts PNP
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS −30 V 3.0 NPN
D1, MUST BE FAST RECOVERY TYPE, eg: 2.0
1N5825 USED ABOVE IB ≈ 100 mA RC
MSD6100 USED BELOW IB ≈ 100 mA SCOPE tf
TUT 1.0
t, TIME (s)
V2 RB 0.7
μ
approx
+8.0 V 0.5
D1 ≈ 8.0 k ≈ 120
51 0.3
0
V1 0.2 tr
+4.0 V VCC = 30 V
approx
IC/IB = 250
−12 V 25 ms for td and tr, D1 is disconnected 0.1 IB1 = IB2
and V2 = 0
tr, tf ≤ 10 ns 0.07 TJ = 25°C td @ VBE(off) = 0 V
DUTY CYCLE = 1.0% 0.05
For NPN test circuit reverse all polarities. 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit Figure 3. Switching Times
1.0
r(t), TRANSIENT THERMAL RESISTANCE
0.7 D = 0.5
0.5
0.3
0.2
0.2
(NORMALIZED)
0.1
0.1 ZqJC(t) = r(t) RqJC P(pk)
0.07 0.05 RqJC = 1.56°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03 READ TIME AT t1 t2
0.02 0.01 TJ(pk) − TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 4. Thermal Response
20 There are two limitations on the power handling ability of

10 5ms a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (mA)
5.0 breakdown. Safe operating area curves indicate IC − VCE

100 ms
limits of the transistor that must be observed for reliable
2.0 1ms d- operation; i.e., the transistor must not be subjected to greater
TJ = 150°C c
1.0 BONDING WIRE LIMITED dissipation than the curves indicate.
0.5 THERMALLY LIMITED @ TC = 25°C The data of Figure 5 is based on T J(pk) = 150_C; TC is
SECOND BREAKDOWN LIMITED variable depending on conditions. Second breakdown pulse
0.2 CURVES APPLY BELOW RATED VCEO limits are valid for duty cycles to 10% provided T J(pk)
0.1 TIP100, TIP105 < 150_C. T J(pk) may be calculated from the data in
0.05 TIP101, TIP106 Figure 4. At high case temperatures, thermal limitations will
TIP102, TIP107 reduce the power that can be handled to values less than the
0.02 limitations imposed by second breakdown
1.0 2.0 5.0 10 20 50 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
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4
10,000
5000 TC = 25°C
h fe , SMALL−SIGNAL CURRENT GAIN

3000 VCE = 4.0 Vdc
2000 IC = 3.0 Adc
1000
500
300
200
100
50
30 PNP
20
NPN
10
1.0 2.0 5.0 10 20 50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 6. Small−Signal Current Gain
300
TJ = 25°C
200
C, CAPACITANCE (pF)
Cob
100
Cib
70
50
PNP
NPN
30
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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5
NPN PNP
TIP100, TIP101, TIP102 TIP105, TIP106, TIP107
20,000 20,000
VCE = 4.0 V VCE = 4.0 V
10,000 10,000
7000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

TJ = 150°C TJ = 150°C
5000 5000
25°C
3000 25°C 3000
2000 2000 −55 °C
−55 °C
1000 1000
700
500 500
300 300
200 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
3.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 3.0

TJ = 25°C TJ = 25°C
2.6 2.6
2.2 IC = 2.0 A 4.0 A 6.0 A 2.2 IC = 2.0 A 4.0 A 6.0 A
1.8 1.8
1.4 1.4
1.0 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
3.0 3.0
TJ = 25°C TJ = 25°C
2.5 2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0 2.0
VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V

1.5 1.5
VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250
1.0 1.0 VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
−T− PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
Q A
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION

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Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your
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Available Formats

TIP100, TIP101, TIP102

(NPN); TIP105, TIP106,

Designed for general−purpose amplifier and low−speed switching DARLINGTON 8 AMPERE

TIP10x = Device Code

Preferred devices are recommended choices for future use

© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

TIP101 TO−220 50 Units / Rail

TIP105 TO−220 50 Units / Rail

TIP106 TO−220 50 Units / Rail

TIP107 TO−220 50 Units / Rail

Figure 1. Power Derating

Figure 2. Switching Times Test Circuit Figure 3. Switching Times

Figure 4. Thermal Response

20 There are two limitations on the power handling ability of

5.0 breakdown. Safe operating area curves indicate IC − VCE

Figure 5. Active−Region Safe Operating Area

h fe , SMALL−SIGNAL CURRENT GAIN

Figure 6. Small−Signal Current Gain

hFE , DC CURRENT GAIN

3.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 3.0

2.2 IC = 2.0 A 4.0 A 6.0 A 2.2 IC = 2.0 A 4.0 A 6.0 A

VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V

PUBLICATION ORDERING INFORMATION

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