MITSUBISHI Nch POWER MOSFET

FS16KM-10
HIGH-SPEED SWITCHING USE

FS16KM-10 OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

6.5 ± 0.3
3 ± 0.3
15 ± 0.3
φ 3.2 ± 0.2

3.6 ± 0.3
14 ± 0.5
1.1 ± 0.2
1.1 ± 0.2

0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25 2.54 ± 0.25

4.5 ± 0.2
1 2 3

2.6 ± 0.2
w

q GATE
w DRAIN
¡VDSS ................................................................................ 500V q
e SOURCE
¡rDS (ON) (MAX) .............................................................. 0.56Ω
¡ID .......................................................................................... 16A e
¡Viso ................................................................................ 2000V TO-220FN

APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol Parameter Conditions Ratings Unit

VDSS Drain-source voltage VGS = 0V 500 V
VGSS Gate-source voltage VDS = 0V ±30 V
ID Drain current 16 A
IDM Drain current (Pulsed) 48 A
PD Maximum power dissipation 40 W
Tch Channel temperature –55 ~ +150 °C
Tstg Storage temperature –55 ~ +150 °C
Viso Isolation voltage AC for 1minute, Terminal to case 2000 Vrms
— Weight Typical value 2.0 g

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS16KM-10
HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 500 — — V
V (BR) GSS Gate-source breakdown voltage IG = ±100µA, VDS = 0V ±30 — — V
IGSS Gate-source leakage current VGS = ±25V, VDS = 0V — — ±10 µA
IDSS Drain-source leakage current VDS = 500V, VGS = 0V — — 1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 V
rDS (ON) Drain-source on-state resistance ID = 8A, VGS = 10V — 0.43 0.56 Ω
VDS (ON) Drain-source on-state voltage ID = 8A, VGS = 10V — 3.44 4.48 V
yfs Forward transfer admittance ID = 8A, VDS = 10V 6.0 8.0 — S
Ciss Input capacitance — 1700 — pF
Coss Output capacitance VDS = 25V, VGS = 0V, f = 1MHz — 230 — pF
Crss Reverse transfer capacitance — 40 — pF
td (on) Turn-on delay time — 30 — ns
tr Rise time — 50 — ns
VDD = 200V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
td (off) Turn-off delay time — 170 — ns
tf Fall time — 60 — ns
VSD Source-drain voltage IS = 8A, VGS = 0V — 1.5 2.0 V
Rth (ch-c) Thermal resistance Channel to case — — 3.13 °C/W

PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA
50 5
3 tw=10µs
POWER DISSIPATION PD (W)

2
DRAIN CURRENT ID (A)

40
101 100µs
7
5
30 3 1ms
2
100 10ms
20 7
5
3
10 2 TC = 25°C
Single Pulse
10–1
7 DC
0 5
0 50 100 150 200 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

(TYPICAL) (TYPICAL)
VGS =20V 10V 6V
50 20
PD = TC = 25°C PD = TC = 25°C
40W Pulse Test 40W Pulse Test
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

40 16 5.5V
VGS = 20V 10V
7V
30 12
6V
20 8
5V

10 5V 4

0 0
0 10 20 30 40 50 0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS16KM-10
HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.

GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
20 1.0
TC = 25°C
ID = 25A Pulse Test
VGS = 10V
DRAIN-SOURCE ON-STATE

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
16 0.8
VOLTAGE VDS (ON) (V)

TC = 25°C 20V
Pulse Test
12 0.6

16A
8 0.4

8A
4 0.2

0 0
0 4 8 12 16 20 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

FORWARD TRANSFER ADMITTANCE

TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
40 102
TC = 25°C VDS = 10V
VDS = 50V 7 Pulse Test
Pulse Test 5
DRAIN CURRENT ID (A)

32
FORWARD TRANSFER
ADMITTANCE yfs (S)

3
2
24
101
16 7
TC = 25°C
5
75°C
125°C
3
8
2

0 100 0
0 4 8 12 16 20 10 2 3 5 7 101 2 3 5 7 102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
104 103
7 Tch = 25°C
5 7 VDD = 200V
5 VGS = 10V
3
SWITCHING TIME (ns)

2 Ciss RGEN = RGS = 50Ω

Ciss, Coss, Crss (pF)

3
CAPACITANCE

103 2
7 td(off)
5
3 102 tf
2 Coss 7
102 5 tr
7
5 3 td(on)
3 Tch = 25°C Crss 2
2 f = 1MHz
VGS = 0V
101 101 0
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 10 2 3 5 7 101 2 3 5 7 102

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)

Feb.1999
 MITSUBISHI Nch POWER MOSFET

FS16KM-10
HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE

VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
20 40
VGS = 0V
GATE-SOURCE VOLTAGE VGS (V)

Tch = 25°C TC = 125°C

ID =16A Pulse Test

SOURCE CURRENT IS (A)

16 32
75°C
VDS = 100V
12 24
200V 25°C
400V
8 16

4 8

0 0
0 20 40 60 80 100 0 0.8 1.6 2.4 3.2 4.0

GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)

ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)

CHANNEL TEMPERATURE CHANNEL TEMPERATURE

(TYPICAL) (TYPICAL)
101 5.0
VDS = 10V
7 VGS = 10V ID = 1mA
GATE-SOURCE THRESHOLD

5 ID = 1/2ID
Pulse Test 4.0
VOLTAGE VGS (th) (V)

3
2
3.0
100
7 2.0
5

3
1.0
2

10–1 0
–50 0 50 100 150 –50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)

BREAKDOWN VOLTAGE VS.

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)

TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)

CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE

(TYPICAL) CHARACTERISTICS
1.4 101
VGS = 0V 7
ID = 1mA 5
D=1
1.2 3
2 0.5
100 0.2
1.0 7
5 0.1
3
2 PDM
0.8
10–1 tw
7 0.05 T
5 0.02
0.6 D= tw
3 0.01 T
2 Single Pulse
0.4 10–2
–50 0 50 100 150 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102

CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s)

Feb.1999
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.