Professional Documents
Culture Documents
47N60C3 PDF
47N60C3 PDF
47N60C3 PDF
• 3HULRGLFDYDODQFKHUDWHG
•([WUHPHGYGWUDWHG
• 8OWUDORZHIIHFWLYHFDSDFLWDQFHV
0D[LPXP5DWLQJV
3DUDPHWHU 6\PERO 9DOXH 8QLW
&RQWLQXRXVGUDLQFXUUHQW ,' $
TC &
TC &
3XOVHGGUDLQFXUUHQWtpOLPLWHGE\Tjmax , 'SXOV
$YDODQFKHHQHUJ\VLQJOHSXOVH ($6 P-
, ' $VDD 9
$YDODQFKHHQHUJ\UHSHWLWLYHW$5OLPLWHGE\Tjmax EAR
, ' $VDD 9
$YDODQFKHFXUUHQWUHSHWLWLYHW$5OLPLWHGE\Tjmax , $5 $
Gate source voltage static VGS 9
*DWHVRXUFHYROWDJH$&I!+] VGS ±
3RZHUGLVVLSDWLRQ7 & & Ptot :
2SHUDWLQJDQGVWRUDJHWHPSHUDWXUH 7 M7 VWJ &
Reverse diode dv/dt 4) dv/dt 15 V/ns
0D[LPXP5DWLQJV
3DUDPHWHU 6\PERO 9DOXH 8QLW
'UDLQ6RXUFHYROWDJHVORSH GYGW 9QV
V DS 9, ' $Tj &
7KHUPDO&KDUDFWHULVWLFV
3DUDPHWHU 6\PERO 9DOXHV 8QLW
PLQ W\S PD[
7KHUPDOUHVLVWDQFHMXQFWLRQFDVH RthJC .:
7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG RthJA
6ROGHULQJWHPSHUDWXUHwavesoldering 7VROG &
PPLQIURPFDVHIRUV
(OHFWULFDO&KDUDFWHULVWLFVDW7M &XQOHVVRWKHUZLVHVSHFLILHG
3DUDPHWHU 6\PERO &RQGLWLRQV 9DOXHV 8QLW
PLQ W\S PD[
'UDLQVRXUFHEUHDNGRZQYROWDJH V(BR)DSS V GS 9,' P$ 9
'UDLQ6RXUFHDYDODQFKH 9%5'6 V GS 9,' $
EUHDNGRZQYROWDJH
*DWHWKUHVKROGYROWDJH 9*6WK ,' µΑVGS V DS
=HURJDWHYROWDJHGUDLQFXUUHQW , '66 V DS 9VGS 9 $
Tj &
Tj &
*DWHVRXUFHOHDNDJHFXUUHQW , *66 V GS 9VDS 9 Q$
'UDLQVRXUFHRQVWDWHUHVLVWDQFH 5'6RQ V GS 9,' $ Ω
Tj &
Tj &
*DWHLQSXWUHVLVWDQFH RG I 0+]RSHQ'UDLQ
(OHFWULFDO&KDUDFWHULVWLFVDWTj &XQOHVVRWKHUZLVHVSHFLILHG
3DUDPHWHU 6\PERO &RQGLWLRQV 9DOXHV 8QLW
PLQ W\S PD[
Transconductance g fs V DS≥
, '
5'6RQPD[ 6
,' $
*DWH&KDUJH&KDUDFWHULVWLFV
Gate to source charge Qgs V DD 9,' $ Q&
Gate to drain charge Qgd
*DWHFKDUJHWRWDO 4J V DD 9,' $
V GS WR9
5HSHWLWYHDYDODQFKHFDXVHVDGGLWLRQDOSRZHUORVVHVWKDWFDQEHFDOFXODWHGDV3
$9 EAR
f
& RHULVDIL[HGFDSDFLWDQFHWKDWJLYHVWKHVDPHVWRUHGHQHUJ\DVCoss ZKLOHVDS LVULVLQJIURPWR9 '66
& LVDIL[HGFDSDFLWDQFHWKDWJLYHVWKHVDPHFKDUJLQJWLPHDVC ZKLOHV LVULVLQJIURPWR9
RWU oss DS '66
4I <=I , di/dt<=200A/us, V
SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
(OHFWULFDO&KDUDFWHULVWLFVDWTj &XQOHVVRWKHUZLVHVSHFLILHG
3DUDPHWHU 6\PERO &RQGLWLRQV 9DOXHV 8QLW
PLQ W\S PD[
,QYHUVHGLRGHFRQWLQXRXV ,6 TC & $
IRUZDUGFXUUHQW
Inverse diode direct current, I SM
pulsed
,QYHUVHGLRGHIRUZDUGYROWDJH 96' VGS 9, ) ,6 9
Reverse recovery time t rr VR 9,) ,6 QV
Reverse recovery charge Q rr diF/dt $V &
Peak reverse recovery current I rrm $
3HDNUDWHRIIDOORIUHYHUVH GL UUGW $V
UHFRYHU\FXUUHQW
7\SLFDO7UDQVLHQW7KHUPDO&KDUDFWHULVWLFV
6\PERO 9DOXH 8QLW 6\PERO 9DOXH 8QLW
W\S W\S
7KHUPDOUHVLVWDQFH 7KHUPDOFDSDFLWDQFH
5WK .: &WK :V.
5WK &WK
5WK &WK
5WK &WK
5WK &WK
5WK &WK
7 DP E
3RZHUGLVVLSDWLRQ 6DIHRSHUDWLQJDUHD
3WRW ITC ,' I9 '6
SDUDPHWHU' T C &
63:1&
$
:
Ptot
,'
WS PV
WS PV
WS PV
WS PV
'&
& 9
TC VDS
7UDQVLHQWWKHUPDOLPSHGDQFH 7\SRXWSXWFKDUDFWHULVWLF
=WK-& IW S ,' IVDSTj &
SDUDPHWHU' WS7 SDUDPHWHUWS VVGS
.: 9
$
9
=WK-&
9
,'
9
9
V 9
tp VDS
7\SRXWSXWFKDUDFWHULVWLF 7\SGUDLQVRXUFHRQUHVLVWDQFH
,' IVDSTj & 5'6RQ f,'
SDUDPHWHUWS VVGS SDUDPHWHUTj &V GS
9
$ Ω 9 9 9
9
5'6RQ
9 9
,'
9
9
9
9
9
9
9
9 $
VDS , '
'UDLQVRXUFHRQVWDWHUHVLVWDQFH 7\SWUDQVIHUFKDUDFWHULVWLFV
5'6RQ I7M ,' I9*69 '6≥[,'[5'6RQPD[
SDUDPHWHU,' $VGS 9 SDUDPHWHUWS V
63:1&
Ω
$ &
5'6RQ
,'
&
W\S
& 9
Tj VGS
7\SJDWHFKDUJH )RUZDUGFKDUDFWHULVWLFVRIERG\GLRGH
VGS I4*DWH ,) I96'
SDUDPHWHU,' $SXOVHG SDUDPHWHU7MWS V
63:1&
63:1&
9
$
IF
VDS max
7M &W\S
7M &W\S
7M &
7M &
Q& 9
4*DWH 96'
7\SGUDLQFXUUHQWVORSH 7\SVZLWFKLQJWLPH
di/dt IR GLQGXFWLYHORDGTj & W IRG LQGXFWLYHORDGT j &
SDUVDS 9VGS 9,' $ SDUV DS 9VGS 9,' $
$V
di/dt
GLGWRQ
Ω
RG
7\SVZLWFKLQJWLPH 7\SGUDLQVRXUFHYROWDJHVORSH
W I,'LQGXFWLYHORDGT j & dv/dt IRGLQGXFWLYHORDGTj &
SDUVDS 9VGS 9RG Ω SDUV DS 9VGS 9,' $
QV
WGRII 9QV
GYGWRII
dv/dt
WGRQ
W
WI
WU
GYGWRQ
$ Ω
,' R G
7\SVZLWFKLQJORVVHV 7\SVZLWFKLQJORVVHV
( I,'LQGXFWLYHORDGTj & ( IRGLQGXFWLYHORDGTj &
SDUVDS 9VGS 9RG Ω SDUV DS 9VGS 9,' $
(RQLQFOXGHV6'36GLRGH
(RQLQFOXGHV6'36GLRGH
FRPPXWDWLRQORVVHV FRPPXWDWLRQORVVHV
P:V
P:V
(
(
(RQ
(RQ
$ Ω
,' R G
$YDODQFKH62$ $YDODQFKHHQHUJ\
,$5 IW$5 ($6 ITj
SDUTj≤& SDU,' $VDD 9
$ P-
($6
,$5
'UDLQVRXUFHEUHDNGRZQYROWDJH $YDODQFKHSRZHUORVVHV
V(BR)DSS ITj 3$5 If
SDUDPHWHUE AR P-
63:1&
V(BR)DSS
3$9
& +]
Tj f
7\SFDSDFLWDQFHV 7\SCossVWRUHGHQHUJ\
& IVDS (RVV fVDS
SDUDPHWHUV GS 9I 0+]
S)
-
&LVV
(RVV
&
&RVV
&UVV
9 9
VDS VDS
7\SJDWHWKUHVKROGYROWDJH
9*6WK I7M
SDUDPHWHU9 *6 9'6,' P$
PD[
9*6WK
W\S
PLQ
&
Tj
'HILQLWLRQRIGLRGHVVZLWFKLQJFKDUDFWHULVWLFV
3G72
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any
typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property
rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For
information on the types in question, please contact the nearest Infineon Technologies
Office. Infineon Technologies components may be used in life-support devices or
systems only with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.