MT3203

MOS-TECH Semiconductor Co.,LTD N



MT3203
N-Channel Low Qg® MOSFET
30V, 100A, 3.3mΩ
General Description Features
This N-Channel MOSFET has been designed specifically to • rDS(ON) = 3.3mΩ, VGS = 10V, ID = 40A
improve the overall ef ficiency of DC/ DC converters using
either synchronous or conven tional swit ching PWM • rDS(ON) = 4.5mΩ, VGS = 4.5V, ID = 40A
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed. • High performance t rench t echnology for ext remely low
rDS(ON)

• Low gate charge

Applications
• High power and current handling capability
• DC/DC converters

(FLANGE) D
DRAIN
SOURCE
DRAIN
GATE G

TO-220 S

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1) 100 A
ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 90 A
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) 16 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 2) 115 mJ
Power dissipation 110 W
PD
Derate above 25oC 0.73 W/oC
TJ, TSTG Operating and Storage Temperature -55 to 175 oC

Thermal Characteristics
o
RθJC Thermal Resistance Junction to Case TO-220 1.36 C/W
o
RθJA Thermal Resistance Junction to Ambient TO-220 ( Note 3) 62 C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
MT3203 MT3203 TO-220AB Tube N/A 50 units

MT3203 Rev. A
©2010 MOS-TECH Semiconductor Corporation
 MT3203
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V
VDS = 24V - - 1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TC = 150oC - - 250
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.3 1.8 2.5 V
ID = 40A, VGS = 10V - 0.0033 0.004
ID = 40A, VGS = 4.5V - 0.0045 0.0059
rDS(ON) Drain to Source On Resistance Ω
ID = 40A, VGS = 10V,
- 0.0082 0.0090
TJ = 175oC

Dynamic Characteristics
CISS Input Capacitance - 2139 - pF
VDS = 15V, VGS = 0V,
COSS Output Capacitance - 464 - pF
f = 1MHz
CRSS Reverse Transfer Capacitance - 199 - pF
RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.9 - Ω
Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 56 72 nC
Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 30 38 nC
VDD = 15V
Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 3.0 4.0 nC
ID = 40A
Qgs Gate to Source Gate Charge - 9.0 - nC
Ig = 1.0mA
Qgs2 Gate Charge Threshold to Plateau - 6.0 - nC
Qgd Gate to Drain “Miller” Charge - 11 - nC

Switching Characteristics (VGS = 10V)

tON Turn-On T ime - - 207 ns
td(ON) Turn-On Delay Time - 10 - ns
tr Rise Time VDD = 15V, ID = 40A - 128 - ns
td(OFF) Turn-Off Delay Time VGS = 4.5V, RGS = 4.7Ω - 44 - ns
tf Fall Time - 31 - ns
tOFF Turn-Off Time - - 112 ns

Drain-Source Diode Characteristics

ISD = 40A - - 1.25 V
VSD Source to Drain Diode Voltage
ISD = 20A - - 1.0 V
trr Reverse Recovery Time ISD = 40A, dISD/dt = 100A/µs - - 32 ns
QRR Reverse Recovered Charge ISD = 40A, dISD/dt = 100A/µs - - 18 nC
Notes:
1: Package current limitation is 80A.
2: Starting TJ = 25°C, L = 51uH, IAS = 64A, VDD = 27V, VGS = 10V.
3: Pulse width = 100s.
4

©2010 MOS-TECH Semiconductor Corporation MT3203 Rev. A

 MT3203
Typical Characteristics TC = 25°C unless otherwise noted

1.2 125
CURRENT LIMITED
BY PACKAGE
POWER DISSIPATION MULTIPLIER

1.0
100

ID, DRAIN CURRENT (A)

0.8
75
0.6 VGS = 4.5V VGS = 10V

50
0.4

0.2 25

0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs Case Figure 2. Maximum Continuous Drain Current vs
Temperature Case Temperature

2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
THERMAL IMPEDANCE

0.02
ZθJC, NORMALIZED

0.01
PDM
0.1

t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

1000
TC = 25oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT FOR TEMPERATURES
IN THIS REGION ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)

CURRENT AS FOLLOWS:

I = I25 175 - TC
VGS = 4.5V
150

VGS = 10V

100

50
10-5 10-4 10-3 10-2 10-1 100 101
t, PULSE WIDTH (s)

Figure 4. Peak Current Capability

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 MT3203
Typical Characteristics TC = 25°C unless otherwise noted

1000 500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - V DD)
10µs
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - V DD) +1]

IAS, AVALANCHE CURRENT (A)

100 100
ID, DRAIN CURRENT (A)

100µs
STARTING TJ = 25oC
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON) 10
1ms
1
SINGLE PULSE 10ms STARTING TJ = 150oC
TJ = MAX RATED DC
TC = 25oC
0.1 1
1 10 60 0.01 0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms)

Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability

160 160
PULSE DURATION = 80µs VGS = 5V
DUTY CYCLE = 0.5% MAX
VDD = 15V VGS = 4V

120 120
ID, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)

VGS = 10V

80 80

TJ = 25oC
VGS = 3V

40 40
TC = 25oC
TJ = 175oC TJ = -55oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0
0 0.2 0.4 0.6 0.8 1.0
2.0 2.5 3.0 3.5 4.0
VGS , GATE TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

12 1.8
PULSE DURATION = 80µs PULSE DURATION = 80µs
ID = 40A DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE

1.6
10
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (mΩ)

ON RESISTANCE

1.4
8

1.2
6
ID = 1A 1.0

4
0.8
VGS = 10V, ID = 40A
2 0.6
2 4 6 8 10
-80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC)

Figure 9. Drain to Source On Resistance vs Gate Figure 10. Normalized Drain to Source On
Voltage and Drain Current Resistance vs Junction Temperature

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 MT3203
Typical Characteristics TC = 25°C unless otherwise noted

1.2 1.10
VGS = VDS, ID = 250µA ID = 250µA

NORMALIZED DRAIN TO SOURCE

1.0 1.05

BREAKDOWN VOLTAGE
THRESHOLD VOLTAGE
NORMALIZED GATE

0.8 1.00

0.6 0.95

0.4 0.90
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)

Figure 11. Normalized Gate Threshold Voltage vs Figure 12. Normalized Drain to Source
Junction Temperature Breakdown Voltage vs Junction Temperature

5000 10
VDD = 15V
VGS , GATE TO SOURCE VOLTAGE (V)

CISS = CGS + CGD 8

C, CAPACITANCE (pF)

COSS ≅ CDS + CGD

1000 6

CRSS = CGD

WAVEFORMS IN
2 DESCENDING ORDER:
ID = 40A
VGS = 0V, f = 1MHz ID = 1A
100 0
0.1 1 10 30 0 10 20 30 40 50 60
VDS , DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC)

Figure 13. Capacitance vs Drain to Source Figure 14. Gate Charge Waveforms for Constant
Voltage Gate Current

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 MT3203
Test Circuits and Waveforms

VDS
BVDSS

L tP
VDS

VARY t P TO OBTAIN IAS

+
VDD
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS
0.01Ω 0

tAV

Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms

VDS
VDD Qg(TOT)

VDS VGS
L
VGS = 10V
VGS Qg(5)
+

VDD Qgs2
VGS = 5V
-

DUT
VGS = 1V
Ig(REF)
0
Qg(TH)
Qgs Qgd

Ig(REF)
0

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveforms

VDS tON tOFF

td(ON) td(OFF)

RL tr tf
VDS
90% 90%

+
VGS
VDD
10% 10%
- 0

DUT 90%
RGS
VGS 50% 50%
PULSE WIDTH
VGS 10%
0

Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms

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Mechanical Dimensions

TO-220

MT3245 Rev. A 7 www.mtsemi.com

 MOS-TECH Semiconductor Co.,LTD


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៪䗴៤⼒Ӯᗻⱘᤳ༅ˈᏠᳯᅶ᠋㛑㞾㸠䋳䋷䖯㸠‫ݫ‬ԭ䆒䅵ǃ䞛পᓊ⚻ᇍㄪঞ䖯㸠䰆ℶ䫭䇃䖤㸠ㄝⱘᅝܼ䆒䅵
˄ࣙᣀ⹀ӊ੠䕃ӊϸᮍ䴶ⱘ䆒䅵˅ҹঞ㗕࣪໘⧚ㄝˈ䖭ᰃ԰Ўᴎ఼੠㋏㒳ⱘߎॖֱ䆕DŽ⡍߿ᰃऩ⠛ᴎⱘ䕃ӊˈ
⬅Ѣऩ⣀䖯㸠偠䆕ᕜೄ䲒ˈ᠔ҹ㽕∖೼乒ᅶࠊ䗴ⱘ᳔㒜ⱘᴎ఼ঞ㋏㒳Ϟ䖯㸠ᅝܼẔ偠Ꮉ԰DŽ
11. བᵰᡞᴀ䌘᭭᠔䆄䕑ⱘѻકҢ݊䕑ԧ䆒໛Ϟौϟˈ᳝ৃ㛑䗴៤၈‫ܓ‬䇃৲ⱘॅ䰽DŽ乒ᅶ೼ᇚᴀ݀ৌѻકᅝ㺙ࠄ
乒ᅶⱘ䆒໛Ϟᯊˈ䇋乒ᅶ㞾㸠䋳䋷ᇚᴀ݀ৌѻક䆒㕂Ўϡᆍᯧ࠹㨑ⱘᅝܼ䆒䅵DŽབᵰҢ乒ᅶⱘ䆒໛Ϟ࠹㨑㗠
䗴៤џᬙᯊˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ
12.೼᳾ᕫࠄᴀ݀ৌⱘџ‫ܜ‬к䴶䅸ৃᯊˈϡৃᇚᴀ䌘᭭ⱘϔ䚼ߚ៪㗙ܼ䚼䕀䕑៪㗙໡ࠊDŽ
13.བᵰ䳔㽕њ㾷݇Ѣᴀ䌘᭭ⱘ䆺㒚‫ݙ‬ᆍˈ៪㗙᳝݊Ҫ݇ᖗⱘ䯂乬ˈ䇋৥ᴀ݀ৌⱘ㧹Ϯにষ੼䆶DŽ

Keep safety first in your circuit designs!

1. MOS-TECH Semiconductor Corp. puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.

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