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HW 7
HW 7
HW 7
2
In the manufacture of microelectronic devices, a thin film of solid silicon (Si) is
uniformly deposited on a wafer surface by the chemical decomposition of silane (SiH4)
in the presence of H2 gas. If the gas composition is maintained at 40 mol % SiH4 and
60 mol % H2, determine
(2) ID 14.23
Assume 1 mole:
mole MW kg wt fraction
Si H4 0.5 32.13 16.06 0.941
H2 0.5 2.02 1.01 0.059
kg
(a) wt Si H4 = 32.13 0.4 mole = 12.85 kg
mole
kg
wt H2 = 2.02 0.6 mole = 1.11 kg
mole
total = 12.85 + 1.21 kg = 14.06 kg
wt fraction :
12.85
Si H4 = = 0.914
14.06
1.21
H2 = = 0.086
14.06
(b) Average molecular weight = total weight per 1 mole = 14.06 kg/ kmole
(c) At 900K and 60 torr,
60torr
P (1.013 105 Pa ) 7997 Pa
760torr
P 7997 Pa mole
C 1.069 3
RT Pa m 3
m
8.314 900 K
mole K
So molar concentration of 50 mole % sitter
mole mole
Csilane (0.4) 1.069 3 0.427 3
m m
(2) PROBLEM 14.25 (ID)
KNOWN: Temperature and pressure of helium stored in a spherical pyrex container of
prescribed diameter and wall thickness.
FIND: Mass rate of helium loss.
SCHEMATIC: