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SM4512NHKP: Pin Description Features
SM4512NHKP: Pin Description Features
Applications (4) G
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a TC=25°C 80*
ID Continuous Drain Current A
TC=100°C 75
b
IDM Pulsed Drain Current TC=25°C 160
TC=25°C 78
PD Maximum Power Dissipation W
TC=100°C 31
RqJC Thermal Resistance-Junction to Case Steady State 1.6 °C/W
c TA=25°C 28
ID Continuous Drain Current A
TA=70°C 22
c TA=25°C 2.3
PD Maximum Power Dissipation W
TA=70°C 1.5
c
t £ 10s 20
RqJA Thermal Resistance-Junction to Ambient °C/W
Steady State 55
d
IAS Avalanche Current, Single pulse L=0.1mH 43 A
d
EAS Avalanche Energy, Single pulse L=0.1mH 92 mJ
Note a,*:Max. continue current is limited by bonding wire.
Note b:Pulse width is limited by max. junction temperature.
Note c:RqJA steady state t=999s.
Note d:UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature T j=25oC).
VDS=24V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current mA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 1.3 1.6 2.3 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA
VGS=10V, IDS=20A - 1.5 1.9
e
RDS(ON) Drain-Source On-state Resistance TJ=125°C - 2.2 - mW
VGS=4.5V, IDS=12A - 2.2 3
Gfs Forward Transconductance VDS=5V, IDS=15A - 32 - S
Diode Characteristics
VSD e Diode Forward Voltage ISD=20A, VGS=0V - 0.8 1.1 V
trr Reverse Recovery Time - 50 -
ta Charge Time - 23.5 - ns
ISD=20A, dlSD/dt=100A/ms
tb Discharge Time - 27.5 -
Q rr Reverse Recovery Charge - 45 - nC
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 0.9 2 W
Ciss Input Capacitance - 2820 3666
VGS=0V,
Coss Output Capacitance VDS=15V, - 1910 2674 pF
Frequency=1.0MHz
C rss Reverse Transfer Capacitance - 140 210
td(ON) Turn-on Delay Time - 15.5 -
tr Turn-on Rise Time VDD=15V, RL=15W, - 11 -
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time R G=6W - 35 -
tf Turn-off Fall Time - 40 -
Gate Charge Characteristics
VDS=15V, VGS=10V,
Qg Total Gate Charge - 44.5 57.8
IDS=20A
Qg Total Gate Charge - 21.2 -
Q gth Threshold Gate Charge - 2.9 - nC
VDS=15V, VGS=4.5V,
Qgs Gate-Source Charge IDS=20A - 4.3 -
Q gd Gate-Drain Charge - 8.3 -
Note e:Pulse test ; pulse width£300ms, duty cycle£2%.
75 75
60 60
45 45
30 30
15 15
o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
300 3
Normalized Transient Thermal Resistance
1 Duty = 0.5
it
100
im
0.2
)L
on
0.1
s(
Rd
ID - Drain Current (A)
100ms
0.1 0.05
300ms
10 0.02
1ms 0.01
0.01
1
DC 1E-3 Single Pulse
o o
TC=25 C RqJC :1.6 C/W
0.1 1E-4
0.01 0.1 1 10 100 1E-6 1E-5 1E-4 1E-3 0.01 0.1
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
300 2
300ms
10 0.05
0.1
1ms 0.02
1 0.01
10ms
0.01
0.1 100ms
Single Pulse
2
Mounted on 1in pad
O
TA=25 C DC o
1s RqJA :55 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100 1000
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
120 3.0
ID - Drain Current (A)
VGS=4.5V
100 2.5
3V
80 2.0
VGS=10V
60 1.5
40 1.0
20 0.5
2.5V
0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150
VDS - Drain - Source Voltage (V) ID - Drain Current (A)
4 1.0
3 0.8
2 0.6
1 0.4
0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
1.6
IS - Source Current (A)
o
Tj=150 C
10
1.4
1.2 Tj=25 C
o
1.0
1
0.8
0.6
o
RON@Tj=25 C: 1.5mW
0.4 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)
3000
Ciss
6
2500
5
Coss
2000
4
1500
3
1000 2
500 Crss
1
0 0
0 5 10 15 20 25 30 0 9 18 27 36 45
Transfer Characteristics
150
120
ID - Drain Current (A)
90
60
30 o
Tj=125 C o
Tj=25 C
0
0 1 2 3 4 5
VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01W
tAV
VDS
RD
VDS
DUT 90%
VGS
RG
VDD
10%
tp VGS
td(on) tr td(off) tf
Disclaimer
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
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