Near-Infrared (NIR) Light-Emitting Diode 1.25 - 1.

33 μm

Lms13LED series
Device parameters Symbol Value Units
Operating/ storage temperature Tstg -60..+90* °C
Soldering temperature
Tsol +180 °C
(can be applied for not more than 5 secs)
*Temperature range may vary for different packaging types.
All parameters refer to LEDs in TO18 package with a cavity and operation at ambient temperature 25°C unless otherwise stated.

LED parameters Conditions Symbol Value Units

Peak emission wavelength1 qCW mode3 I = 25 mA λp 1.25 - 1.33 µm
1 3
FWHM of the emission band qCW mode I = 25 mA FWHM 70 - 100 nm
Average optical power (minimal / typical)1 qCW mode3 I = 200 mA PqCW min 10 / typ 12 mW
Peak optical power (minimal / typical)2 Pulse mode4 I = 1 A Ppul min 25 / typ 29 mW
3
qCW mode IqCW 200 mA
Maximum operating current Pulse mode4 Ipul 1 A
5
DC mode IDC 100 mA
Forward voltage1 qCW mode3 I = 200 mA V 0.9 - 1.2 V

Typical spectrum (qCW3, 25 mA) Spectra at different temperatures (qCW3, 25 mA)

400 400
5°C
300 300 25°C
Intensity, a.u.

Intensity, a.u.

50°C
200 200

100 100

0 0
1100 1200 1300 1400 1500 1100 1200 1300 1400 1500
Wavelength, nm Wavelength, nm

Typical optical power characteristic (qCW3) Typical current-voltage characteristic (qCW3)

14 200
12
150
10
Current, mA
Power, mW

8 100
6
50
4
2 0
0 -800 -400 0 400 800 1200
0 50 100 150 200 250 -50
Current, mA Voltage, mV

1
Parameter tested for each device.
2
Parameter tested for representative sampling.
3
qCW mode: repetition rate: 0.5 KHz, pulse duration: 1 ms, duty cycle: 50%.
4
Pulse mode: repetition rate: 0.5 KHz, pulse duration: 20 µs, duty cycle: 1%.
5
DC mode: direct current.

Rev.011216 The design and specifcation of the product can be changed by LED Microsensor NT LLC. without notice

HEAD OFFICE LED Microsensor NT, LLC and RnD CENTRE Microsensor Technology, LLC
10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 1 (8)
 Near-Infrared (NIR) Light-Emitting Diode 1.25 - 1.33 μm

Packages Model
TO-18 with a cap with a glass window Lms13LED
TO-18 with a parabolic reflector without a glass window Lms13LED-R
TO-18 with a parabolic reflector with a glass window Lms13LED-RW
TO-5 with a built-in thermocooler and thermoresistor, covered by a cap with a glass window Lms13LED-TEM
TO-5 with a built-in thermocooler and thermoresistor, covered by a parabolic reflector with a glass window Lms13LED-TEM-R

Radiant characteristics (far-field pattern)

TO-18 package with a cap TO-18 package with a parabolic reflector

10° 20° 30° 40° 10° 20° 30° 40°

Relative radiant intensity

50° Relative radiant intensity

50°

60° 60°
70° 70°
80° 80°
90° 90°
1.0 0.8 0.6 0.4 0.2 0 1.0 0.8 0.6 0.4 0.2
0

Related products:

● Photodiodes Lms24PD, Lms25PD series - detectors of mid-infrared radiation;

● LED drivers (D-41i, D-51i, minidrivers mD-1c, mD-1p) - provide LED power supply in pulse modes.

Rev.011216 The design and specifcation of the product can be changed by LED Microsensor NT LLC. without notice

HEAD OFFICE LED Microsensor NT, LLC and RnD CENTRE Microsensor Technology, LLC
10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 2 (8)
 Near-Infrared (NIR) Light-Emitting Diode 1.25 - 1.33 μm

To drive the LED we recommend the following basic circuit connections:

LED basic circuit connection LED with thermoelectric module basic circuit connection

Pulse LED
generator
1 Ohm thermocooler

I adjust

Constant current source

We recommend using Quasi Continuous Wave (qCW) mode with a duty cycle 50% or 25% to obtain maximum
average optical power and short Pulse modes to obtain maximum peak power.

Quasi Continuous Wave (qCW) mode Pulse mode

2-20 μs

31-1000 μs 31-1000 μs
Drive current
Drive current

62 - 2000 μs
max. 1 A
max. 0.2 A
f = 0.5 - 16 kHz f = 0.5 - 16 kHz

Time Time

IMPORTANT CAUTIONS:

● please check your connection circuit before turning on the LED;

● please mind the LED polarity: anode is marked with a RED dot; REVERSE voltage applying is FORBIDDEN;
● please do not connect the LED to the multimeter;
● please control the CURRENT applied to the LED in order NOT to EXCEED the maximum allowable values.

Rev.011216 The design and specifcation of the product can be changed by LED Microsensor NT LLC. without notice

HEAD OFFICE LED Microsensor NT, LLC and RnD CENTRE Microsensor Technology, LLC
10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 3 (8)
 Near-Infrared (NIR) Light-Emitting Diode 1.25 - 1.33 μm

Technical Drawings

Lms13LED

4,8±0,2 LED chip

3,5±0,2
0,3
4,1±0,2
2,6±0,2

0,2
13,5±0,5

1 - LED anode
1 2 2- LED cathode

2 pins 0,4

TOP VIEW BOTTOM VIEW

45
LED chip
1

1 2 2 1
1

2,5±0,1
5,6±0,2

Rev.011216 The design and specifcation of the product can be changed by LED Microsensor NT LLC. without notice

HEAD OFFICE LED Microsensor NT, LLC and RnD CENTRE Microsensor Technology, LLC
10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 4 (8)
 Near-Infrared (NIR) Light-Emitting Diode 1.25 - 1.33 μm

Technical Drawings

Lms13LED-R

9,0±0,2
LED chip 8,4±0,1
0,3

5,0±0,2
2,6±0,2

0,2
13,5±0,5

1 - LED anode
1 2 2- LED cathode

2 pins 0,4

TOP VIEW BOTTOM VIEW

45
LED chip
1

1 2 2 1

2,5±0,1
5,6±0,2

Rev.011216 The design and specifcation of the product can be changed by LED Microsensor NT LLC. without notice

HEAD OFFICE LED Microsensor NT, LLC and RnD CENTRE Microsensor Technology, LLC
10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 5 (8)
 Near-Infrared (NIR) Light-Emitting Diode 1.25 - 1.33 μm

Technical Drawings

Lms13LED-RW

9,0±0,2
LED chip 8,4±0,1
0,3

5,0±0,2
2,6±0,2

0,2
13,5±0,5

1 - LED anode
1 2 2- LED cathode

2 pins 0,4

TOP VIEW BOTTOM VIEW

45
LED chip
1

1 2 2 1

2,5±0,1
5,6±0,2

Rev.011216 The design and specifcation of the product can be changed by LED Microsensor NT LLC. without notice

HEAD OFFICE LED Microsensor NT, LLC and RnD CENTRE Microsensor Technology, LLC
10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 6 (8)
 Near-Infrared (NIR) Light-Emitting Diode 1.25 - 1.33 μm

Technical Drawings

Lms13LED-TEM

9,2±0,1
LED chip
8,3±0,1 on Si substrate
5±0,1
1,6±0,1

6,6±0,2
0,4
1,2

1 - TEC +
2 - LED anode
13,5

3 - LED cathode
4 - thermistor
5 - thermistor
6 pins 0,45 6 - TEC -

TOP VIEW BOTTOM VIEW

4 3 3 4

5 2 2 5
6
6 1 1

0,8
30
0,98

Rev.011216 The design and specifcation of the product can be changed by LED Microsensor NT LLC. without notice

HEAD OFFICE LED Microsensor NT, LLC and RnD CENTRE Microsensor Technology, LLC
10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 7 (8)
 Near-Infrared (NIR) Light-Emitting Diode 1.25 - 1.33 μm

Technical Drawings

Lms13LED-TEM-R

15±0,2 LED chip

on Si substrate

7,2±0,2
0,4

1 - TEC +
2 - LED anode
3 - LED cathode
13,5

4 - thermistor
5 - thermistor
6 pins 0,45 6 - TEC -

TOP VIEW BOTTOM VIEW

3 4
4 3
2
5 2 5

6 1 6
1

0,8
0,98

30

Rev.011216 The design and specifcation of the product can be changed by LED Microsensor NT LLC. without notice

HEAD OFFICE LED Microsensor NT, LLC and RnD CENTRE Microsensor Technology, LLC
10, A, Kurchatova str., 1N, St-Petersburg, 194223, Russia; info@lmsnt.com; www.lmsnt.com page 8 (8)