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Ahsanullah University of Science & Technology: Electrical and Electronics Engineering
Ahsanullah University of Science & Technology: Electrical and Electronics Engineering
Ahsanullah University of Science & Technology: Electrical and Electronics Engineering
Submitted By:
Name : MD. Tahmidul Islam
ID NO : 18.02.05.165
Year : 2nd Semester: 1st
Group No : 01
Section : C
The objective of this experiment is to study the output characteristics of CE (common
emitter) configuration of BJT.
i.Transistor-1 Piece
ii.Resistor-470 Ω,2.2KΩ,3.3KΩ,4.7KΩ,10KΩ,470KΩ-1 piece each
iii.POT-100KΩ-1 Unit
iv.Trainer Board
v.DC Power Supply- 1 Unit
vi.Digital Multimeter-1 Unit
vii.Chords & Wire-as required
Here,
Ic=VR470/R
=0.19/470
=0.4mA
Similarly,We get the other values of Ic by Varying the pot
In this experiment, we learn about the commo emitter configuration of bjt. We can find
the value of bjt from the graph which is 4.55 here current ic=0 which is known as cutoff
region. A curve is then drawn between output current ic and output voltage Vce. Here
collector base junction and emitter base junction is at reverse bias.Then we can see a rapid
change of current after 0.2V which means collector base junction and emitter base
junction is at forward bias.