SM3116NAF/SM3116NAFP ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 30V/58A,
RDS(ON)= 5.5mΩ (Max.) @ VGS=10V
RDS(ON)= 7.8mΩ (Max.) @ VGS=4.5V
S S
• Reliable and Rugged
G
D
G
D

• Lead Free and Green Devices Available

Top View of TO-220 Top View of TO-220FP
(RoHS Compliant)
• 100% UIS + Rg Tested
D

Applications
G
• Power Management in Desktop Computer or
DC/DC Converters.

N-Channel MOSFET

Ordering and Marking Information

SM3116NA Package Code

F : TO-220 FP : TO-220FP
Assembly Material Operating Junction Temperature Range
Handling Code C : -55 to 150 oC
Handling Code
Temperature Range TU : Tube (50ea/tube)
Assembly Material
Package Code G : Halogen and Lead Free Device

SM3116NA F/FP : SM3116A XXXXX - Lot Code

XXXXX
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

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Rev. A.3 - March, 2015
SM3116NAF/SM3116NAFP ®

Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TA =25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
IS Diode Continuous Forward Current 20
I DP 300μs Pulse Drain Current Tested TC=25°C 200
A
TC=25°C 58*
ID Continuous Drain Current
TC=100°C 36
TC=25°C 31
PD Maximum Power Dissipation W
TC=100°C 12
RθJC Thermal Resistance-Junction to Case 4
°C/W
RθJA Thermal Resistance-Junction to Ambient 62.5
EAS Avalanche Energy, Single pulse L=0.5mH 100 mJ
Note ：* Current limited by bond wire.

Electrical Characteristics (TA = 25°C unless otherwise noted)

SM3116NAF/NAFP
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BV DSS Drain-Source Breakdown Voltage VGS =0V, IDS =250µA 30 - - V
VDS =24V, VGS =0V - - 1
I DSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS =VGS, I DS=250µA 1.5 1.8 2.5 V
IGSS Gate Leakage Current VGS =±20V, V DS=0V - - ±100 nA
VGS =10V, IDS=40A - 4.6 5.5
RD S(ON) a Drain-Source On-state Resistance mΩ
VGS =4.5V, IDS=20A - 6 7.8
Diode Characteristics
V SD a Diode Forward Voltage ISD=20A, VGS=0V - 0.8 1.1 V
trr Reverse Recovery Time - 21 - ns
ID S=40A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge - 13 - nC

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Rev. A.3 - March, 2015
SM3116NAF/SM3116NAFP ®

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

SM3116NAF/NAFP
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Dynamic Characteristics b
RG Gate Resistance VGS =0V,VDS=0V,F=1MHz - 2.4 - Ω
C iss Input Capacitance - 1700 -
VGS =0V,
Coss Output Capacitance VDS =15V, - 265 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 165 -
td(ON) Turn-on Delay Time - 15 28
tr Turn-on Rise Time VDD=15V, RL =15Ω, - 13 24
ID S=1A, VGEN =10V, ns
td(OFF) Turn-off Delay Time RG =6Ω - 39 71
tf Turn-off Fall Time - 10 19
b
Gate Charge Characteristics
Qg Total Gate Charge - 28.5 40
VDS =15V, VGS =10V,
Qgs Gate-Source Charge - 3.7 - nC
ID S=40A
Q gd Gate-Drain Charge - 8 -
Note a ：Pulse test ; pulse width≤300 µs, duty cycle≤2%.
Note b ：Guaranteed by design, not subject to production testing.

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SM3116NAF/SM3116NAFP ®

Typical Operating Characteristics

Power Dissipation Drain Current

35 70

30 60

ID - Drain Current (A)

25 50
Ptot - Power (W)

20 40

15 30

10 20

5 10
o o
T C=25 C T C=25 C,V G=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

400 3
Normalized Transient Thermal Resistance

100
it

1
im
)L

Duty = 0.5
on
ID - Drain Current (A)

s(

300µs
Rd

0.2
1ms
10 10ms 0.1
100ms 0.05
1s 0.02
0.1

0.01
1 DC

Single Pulse
2
Mounted on 1in pad
O o
TC=25 C RθJA :62.5 C/W
0.1 0.01
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.3 - March, 2015
SM3116NAF/SM3116NAFP ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

160 10

140 9

RDS(ON) - On - Resistance (mΩ)

VGS= 4.5,5,6,7,8,9,10V
120 8
ID - Drain Current (A)

VGS=4.5V
100 7
4V

80 6

VGS=10V
60 5
3.5V
40 4

20 3
3V
0 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 30 60 90 120 150

VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

24 1.6
IDS=40A IDS =250µA
1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)

20

1.2
16

1.0
12
0.8

8
0.6

4
0.4

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.3 - March, 2015
SM3116NAF/SM3116NAFP ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 200
VGS = 10V
1.8 IDS = 40A 100
Normalized On Resistance

1.6

IS - Source Current (A)

1.4 o
T j=150 C
10
1.2
o
T j=25 C
1.0

0.8
1
0.6

0.4
o
RON@Tj=25 C: 4.6m Ω
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

2400 10
Frequency=1MHz VDS= 15V
9
2100 IDS= 40A
VGS - Gate-source Voltage (V)

8
1800
C - Capacitance (pF)

Ciss 7
1500
6

1200 5

4
900
3
600
2
Coss
300 1
Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.3 - March, 2015
SM3116NAF/SM3116NAFP ®

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD

VDD
tp IL EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

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Rev. A.3 - March, 2015
SM3116NAF/SM3116NAFP ®

Disclaimer

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making

great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.

All information which is shown in the datasheet is based on Sinopower’s

research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.

In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.

The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.

The products are not designed or manufactured to be used with any

equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.

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Rev. A.3 - March, 2015
SM3116NAF/SM3116NAFP ®

Classification Profile

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Rev. A.3 - March, 2015
SM3116NAF/SM3116NAFP ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Package Volume mm 3 Volume mm 3
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package Volume mm 3 Volume mm3 Volume mm3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

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