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NSM80101MT1G NPN Transistor With Dual Series Switching Diode
NSM80101MT1G NPN Transistor With Dual Series Switching Diode
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE −
(IC = 10 mA, VCE = 1.0 V) 120 −
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product fT MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 150 −
Forward Voltage VF mV
(IF = 1.0 mA) − 715
(IF = 10 mA) − 855
(IF = 50 mA) − 1000
(IF = 150 mA) − 1250
Reverse Recovery Time trr ns
(IF = IR = 10 mA, iR(REC) = 1.0 mA, RL = 100 W) − 6.0
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NSM80101MT1G
TYPICAL CHARACTERISTICS
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
300 80
TJ = 25°C
VCE = 2.0 V 60
200 TJ = 25°C
40
C, CAPACITANCE (pF)
Cibo
100 20
70
10
8.0
50
6.0 Cobo
30 4.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
1.0 k 400
700
TJ = 125°C
500
ts VCE = 1.0 V
300
200
h FE , DC CURRENT GAIN
200 25°C
t, TIME (ns)
100 -55°C
70 tf 100
50
VCC = 40 V 80
30 IC/IB = 10 tr
60
20 IB1 = IB2
TJ = 25°C td @ VBE(off) = 0.5 V
10 40
5.0 7.0 10 20 30 50 70 100 200 300 500 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
1 1.1
IC/IB = 10
VCE(sat), COLLECTOR−EMITTER
1.0
IC/IB = 10
SATURATION VOLTAGE (V)
0.9
150°C
0.8 −55°C
25°C
−55°C 0.7
0.1 25°C
0.6
0.5
0.4
150°C
0.3
0.01 0.2
0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 5. Collector Emitter Saturation Voltage Figure 6. Base Emitter Saturation Voltage vs.
vs. Collector Current Collector Current
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NSM80101MT1G
TYPICAL CHARACTERISTICS
1.2
1.0 0.8
IC = IC = IC = IC =
0.9
−55°C 50 mA 100 mA 250 mA 500 mA
0.8 0.6
0.7 25°C
0.6 0.4
0.5 IC =
0.4 150°C 0.2 10 mA
0.3
0.2 0
0.0001 0.001 0.01 0.1 1 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
Figure 7. Base Emitter Voltage vs. Collector Figure 8. Collector Saturation Region
Current
-0.8 1
R qVB , TEMPERATURE COEFFICIENT (mV/ °C)
1S 1 mS
IC, COLLECTOR CURRENT (A)
-1.2
100 mS
0.1 10 mS
-1.6
-2.4
-2.8 0.001
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Safe Operating Area
Figure 9. Base−Emitter Temperature
Coefficient
400
PD, POWER DISSIPATION (mW)
300
200
100
0
0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
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NSM80101MT1G
TYPICAL CHARACTERISTICS
1000 100
TA = 150°C
IF, FORWARD CURRENT (mA)
TA = −55°C
0.1 0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 30 40 50 60 70
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 12. Forward Voltage Figure 13. Leakage Current
0.61 100
0.57 75
0.55
0.53 50
0.51
0.49 25
0.47
0.45 0
0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175
VR, REVERSE VOLTAGE (V) TA, DERATED AMBIENT TEMPERATURE (°C)
Figure 14. Capacitance Figure 15. Diode Power Dissipation Curve
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NSM80101MT1G
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
6 5 4 THICKNESS OF BASE MATERIAL.
E 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04.
HE
1 2 3
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.90 1.00 1.10 0.035 0.039 0.043
b A1 0.01 0.06 0.10 0.001 0.002 0.004
b 0.25 0.37 0.50 0.010 0.015 0.020
e c 0.10 0.18 0.26 0.004 0.007 0.010
D 2.90 3.00 3.10 0.114 0.118 0.122
E 1.30 1.50 1.70 0.051 0.059 0.067
q e 0.85 0.95 1.05 0.034 0.037 0.041
C L 0.20 0.40 0.60 0.008 0.016 0.024
0.05 (0.002) A HE 2.50 2.75 3.00 0.099 0.108 0.118
q 0° − 10° 0° − 10°
L
A1
SOLDERING FOOTPRINT*
2.4
0.094
0.95
1.9 0.037
0.074
0.95
0.7 0.037
0.028
1.0
0.039 SCALE 10:1 ǒinches
mm Ǔ
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