Univ

ersit
yofThi-Qar
Engi
neeringColl
ege
Petr
oleum depar
tment

Nanot
echnol
ogy
El
ect
ron-
beam l
i
thogr
aphy

By

AhmedNaser
I
ntr
oduct
ion

Nanopar ti
cles( NPs;1–100nm i nsi ze)hav easpeci alpl acei nnanosci enceand
nanot echnol ogy ,notonl ybecauseoft heirpar ti
cul arpr oper ti
esr esult
ingf r
om t heir
reduceddi mensi ons,butal sobecauset heyar epr omisingbui l
di ngbl ocksf ormor e
compl exnanost ruct ures.Thi schapt ergivesanov ervi
ewofNPsandt heirpresencei n
ourdai lylives.I tpr ov idesexampl esoft heuseofNPsi nnanot echnol ogyt oobt ai
n
differ
entend- product si n di ff
erentsect ors ofeconomi c act i
v it
y.I n addi t
ion,a
classifi
cat i
on of NPs based on t heir di mensi ons,mor phology and chemi cal
composi ti
oni spr esent ed.NPuni for mi t
yandaggl omer ations, withaspeci alfocuson
superpar amagnet icNPsandt heirnanocomposi tes, aredi scussed.
Themosti mpor tantr equi rementf ort henanot echnol ogydef ini
tioni st hatt henano-
structurehasspeci alpr oper tiesthatar eexcl usivel yduet oitsnanoscal epr oporti
ons.
Thisdef init
ioni sbasedont henumberofdi mensi onsofamat erial,whichar eoutside
thenanoscal e( <100nm)r ange.
Accor dingly,inzer o-dimensi onal (0D)nanomat erialsall thedi mensi onsar emeasur ed
withint henanoscal e( nodi mensi onsar el argert han100nm) ;i nt wo- dimensional
nanomat erials( 2D) ,t wo di mensi ons ar e out side t he nanoscal e;and i nt hr ee-
dimensi onalnanomat erials( 3D)ar emat erialst hatar enotconf inedt othenanoscal e
i
nanydi mensi on.Thi scl asscancont ai
nbul kpowder s,di spersionsofnanopar t
icles,
bundles ofnanowi res,and nanot ubes as wel las mul ti
-nanol ayers.Check our
Frequent lyAskedQuest ionst ogetmor edet ail
s.
Sy
nthesi
sofNanopar
ti
cles
El
ect
ron-
beam l
i
thogr
aphy
El
ectronbeam lit
hography(EBL)r ef
erstoadi r
ectwr i
ti
ngl
ithogr
aphicprocessthat
usesaf ocusedbeam ofelectronstoform patternsbymateri
almodifi
cati
on,materi
al
depositi
on(addit
ive)
,ormaterialremoval(
subt racti
ve)
.Fr
om: Three-
Dimensional
Microfabri
cati
onUsingTwo- photonPolymerization

Elect r
on-beam li
thogr aphy(oftenabbrevi
at edase- beam lit
hogr aphy ,EBL)isthe
pract i
ceofscanni ngaf ocusedbeam ofel ectronst odrawcust om shapesona
sur f
acecov eredwi thanel ectr
on-sensit
ivef i
l
m cal l
edar esist(exposi ng)
.[1]The
electronbeam changest hesolubi
li
tyofther esi st
,enabli
ngsel ectiveremov alof
eithertheexposedornon- exposedregionsoft heresistbyimmer singitinasolvent
(dev el
oping).Thepur pose,aswithphotoli
thogr aphy ,
istocr eatev erysmal l
structuresinther esistthatcansubsequent l
ybet ransferr
edt othesubst r
ate
mat erial
,oftenbyet ching.

Thepr imaryadvant
ageofelect
ron-
beam l
it
hogr aphyisthati
tcandr awcust om
patter
ns( di
rect
-wri
te)wi
thsub-10nm r
esoluti
on.Thisform ofmaskl ess
l
ithographyhashighresol
uti
onandlowthroughput ,
li
mi t
ingit
susaget o
photomaskf abri
cati
on,l
ow-vol
umeproductionofsemi conductordevices,
and
researchanddev el
opment.

Electr
on-beam l
it
hographysyst
emscanbecl assi
fi
edaccordi
ngtobot hbeam
shapeandbeam def l
ectionst
rategy.OldersystemsusedGaussian-shapedbeams
andscannedt hesebeamsi narasterfashion.Newersyst
emsuseshapedbeams,
whichmaybedef l
ect
edt ovari
ousposi t
ionsinthewri
ti
ngf i
eld(
thisisalsoknown
asv ect
orscan).

Electr
onsources
Lower -
resol
uti
onsy st
emscanuset hermionicsources,whichar eusuall
yformed
from l
anthanum hexabori
de.However,syst
emswi t
hhigher-r
esoluti
on
requir
ement sneedtousefiel
delect
ronemi ssi
onsour ces,suchasheat edW/ ZrO2
forlowerenergyspreadandenhancedbr i
ghtness.Thermal f
ieldemi ssi
onsources
arepreferr
edov ercol
demissionsources,i
nspiteofthef or
mer '
sslightl
ylar
ger
beam size,becausetheyoff
erbett
erstabil
i
tyov ert
ypicalwrit
ingtimesofsev er
al
hours.

Electr
onbeamwrit
eti
me
Themi ni
mum ti
met oexposeagi
venar
eaf
oragi
vendosei
sgi
venbyt
he
foll
owingfor
mula:
[2]

{
\di
spl
ayst
yleD\
cdotA=T\cdotI
\,}D\cdotA=T\cdotI\,
wher
e{\di
spl
ayst
yleT}Tistheti
met oexposet
heobject(
canbedi
vi
dedi
nto
exposur eti
me/stepsi
ze),
{\di
spl
aystyl
eI}Ii
sthebeam cur
rent
,{\
displ
ayst
yleD}
Dist hedoseand
{
\displayst
yleA}Aistheareaexposed.

Forexampl
e,assuminganexposur
eareaof1cm2,
adoseof10−3coul
ombs/
cm2,
andabeam curr
entof10−9amperes,
theresul
t

mi ni
mum wr itetimewoul dbe106seconds( about12day s)
.Thismi ni
mum wr i
tet i
me
doesnoti ncludet i
mef orthestagetomov ebackandf or th,aswellastimeforthe
beam tobebl anked(blockedfrom thewaf erduringdef lecti
on),aswellastimef or
otherpossiblebeam cor recti
onsandadj ustment si nthemi ddleofwr i
ti
ng.Tocov er
the700cm2sur faceareaofa300mm si l
iconwaf er,themi nimum wr it
etimewoul d
extendto7* 108seconds, about22y ear
s.Thi si
saf actorofabout10mi ll
i
ont i
mes
slowerthancur rentopticall
it
hographytools.Itiscl eart hatthroughputisaserious
l
imi t
ati
onf orelectronbeam lit
hography,especiallywhenwr iti
ngdensepat t
ernsov er
alargearea.

E-beam li
thographyi snotsui t
ableforhigh-volumemanuf act
uringbecauseofi ts
l
imi t
edthroughput .Thesmal l
erfi
eldofelectronbeam wr i
ti
ngmakesf orveryslow
patterngenerationcompar edwithphotolit
hogr aphy( t
hecurrentstandard)because
mor eexposuref ieldsmustbescannedt of ormt hef i
nalpatt
ernarea( ≤mm2f or
electr
onbeam v s.≥40mm2f oranopticalmaskpr ojecti
onscanner )
.Thestage
mov esinbetweenf i
eldscans.Theelectronbeam f ieldissmallenought hata
rasteri
ngorser pent i
nestagemot ionisneededt opat t
erna26mm X33mm ar ea
forexampl e,
wher easinaphot oli
thogr
aphyscanneronl yaone-dimensionalmot i
on
ofa26mm X2mm sl i
tfi
eldwoul dberequired.

Cur
rent
lyanopt
ical
maskl
essl
i
thogr
aphyt
ool
[3]i
smuchf
ast
ert
hananel
ect
ron
beam t
ool
usedatt
hesamer
esol
uti
onf
orphot
omaskpat
ter
ning.

Ref
erences
1.
Edi
tMcCor
d,M.A.
;M.J.Rooks(
2000)
.

"2"
.SPIEHandbookofMicrol
i
thogr
aphy
,Mi
cromachi
ningandMi
crof
abr
icat
ion.
Par
ker,
N.W.;etal.(
2000)
.

3."
High-
thr
oughputNGLelect
ron-
beam di
rect
-wri
tel
ithogr
aphysy
stem".Proc.
SPI
E.EmergingLi
thogr
aphi
cTechnologi
esIV.3997:
713.doi:
10.
1117/12.
390042.

4.Fast
erandl
owercostf
or65nm and45nm phot
omaskpat
ter
ning[
deadl
i
nk]

5.M.L.Kempsel
letal
.,
J.Mi
crol
i
th/
Nanol
i
th.MEMSMOEMS,
vol
.8,
043001(
2009)
.

6.H.Sunaoshi
etal.,
Prof.SPI
Ev ol
.6283,
628306(
2006)
.K.Ugaj
i
netal
.
,Pr
oc.
SPIEvol
.6607,66070A(2007).