Apt40dq60b S (G) D PDF

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600V 40A

APT40DQ60BG
APT40DQ60SG
Pb Free Terminal Finish.

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS


• Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses
-Switchmode Power Supply
-Inverters • Soft Recovery Characteristics • Low Noise Switching
• Free Wheeling Diode
-Motor Controllers • Popular TO-247 Package or • Cooler Operation
-Converters Surface Mount D3PAK Package
-Inverters • Low Forward Voltage • Higher Reliability Systems 2
1
• Snubber Diode
• Low Leakage Current • Increased System Power
• PFC Density
• Avalanche Energy Rated
1 - Cathode
2 - Anode
Back of Case - Cathode

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Characteristic / Test Conditions APT40DQ60(B/S)G UNIT

VR Maximum D.C. Reverse Voltage

VRRM Maximum Peak Repetitive Reverse Voltage 600 Volts

VRWM Maximum Working Peak Reverse Voltage

IF(AV) Maximum Average Forward Current (TC = 111°C, Duty Cycle = 0.5) 40
IF(RMS) RMS Forward Current (Square wave, 50% duty) 63 Amps

IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 320


EAVL Avalanche Energy (1A, 40mH) 20 mJ

TJ,TSTG Operating and StorageTemperature Range -55 to 175


°C
TL Lead Temperature for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS


Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

IF = 40A 2.0 2.4


VF Forward Voltage IF = 80A 2.5 Volts

IF = 40A, TJ = 125°C 1.7


VR = 600V 25
IRM Maximum Reverse Leakage Current µA
1-2020

VR = 600V, TJ = 125°C 500


CT Junction Capacitance, VR = 200V 36 pF
053-4212 Rev D

Microsemi Website - http://www.microsemi.com


DYNAMIC CHARACTERISTICS APT40DQ60(B/S)G

Symbol Characteristic Test Conditions MIN TYP MAX UNIT


trr Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 22
ns
trr Reverse Recovery Time - 25
Qrr IF = 40A, diF/dt = -200A/µs
Reverse Recovery Charge - 35 nC
VR = 400V, TC = 25°C
IRRM Maximum Reverse Recovery Current - 3 - Amps
trr Reverse Recovery Time - 160 ns
Qrr IF = 40A, diF/dt = -200A/µs
Reverse Recovery Charge - 480 nC
VR = 400V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 6 - Amps
trr Reverse Recovery Time - 85 ns
IF = 40A, diF/dt = -1000A/µs
Qrr Reverse Recovery Charge - 920 nC
VR = 400V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 20 Amps

THERMAL AND MECHANICAL CHARACTERISTICS


Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

RθJC Junction-to-Case Thermal Resistance .67 °C/W

0.22 oz
WT Package Weight
5.9 g

10 lb•in
Torque Maximum Mounting Torque
1.1 N•m
APT Reserves the right to change, without notice, the specifications and information contained herein.

0.70

D = 0.9
Z JC, THERMAL IMPEDANCE (°C/W)

0.60

0.50 0.7

0.40
0.5
Note:
0.30
PDM

t1
0.3
0.20 t2

t
0.10 Duty Factor D = 1/t2
0.1
θ

SINGLE PULSE Peak TJ = PDM x ZθJC + TC


0.05
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

RC MODEL
Junction
temp (°C)
1-2020

0.289 0.00448
Power
(watts)
053-4212 Rev D

0.381 0.120

Case temperature (°C)

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL


TYPICAL PERFORMANCE CURVES APT40DQ60(B/S)G
120 180
T = 125°C
J
V = 400V
160 R

trr, REVERSE RECOVERY TIME


80A
100
IF, FORWARD CURRENT
140
40A
80 120
20A
100

(ns)
(A)

60
TJ = 125°C 80

40 60

TJ = 175°C TJ = 25°C 40
20
TJ = -55°C 20

0 0
0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
1400 25

IRRM, REVERSE RECOVERY CURRENT


T = 125°C T = 125°C
J J
Qrr, REVERSE RECOVERY CHARGE

V = 400V V = 400V
R R
1200 80A
80A 20
1000

15
800
(nC)

(A)
40A

600 40A
10

400
20A 20A
5
200

0 0
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs) -diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.4 80
Duty cycle = 0.5
T = 175°C
J
1.2 70
Qrr
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)

trr 60
1.0
IRRM
50
IF(AV) (A)

0.8
40
0.6
trr 30
0.4
Qrr 20

0.2 10

0.0 0
0 25 50 75 100 125 150 75 100 25125 50
150 175
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
200

180
CJ, JUNCTION CAPACITANCE

160

140

120
(pF)

100

80
1-2020

60

40
053-4212 Rev D

20

0
1 10 100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
APT40DQ60(B/S)G
Vr

+18V diF /dt Adjust


APT40GT60BR

0V
D.U.T.
30µH trr/Qrr
Waveform

CURRENT
PEARSON 2878
TRANSFORMER

Figure 9. Diode Test Circuit

1 IF - Forward Conduction Current


1 4 6
2 diF /dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3 IRRM - Maximum Reverse Recovery Current.
5 0.25 IRRM
4 trr - Reverse Recovery Time, measured from zero crossing where diode 3
current goes from positive to negative, to the point at which the straight Slope = diM/dt
2
line through IRRM and 0.25 IRRM passes through zero.

5 Qrr - Area Under the Curve Defined by IRRM and trr.

6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.

Figure 10, Diode Reverse Recovery Waveform and Definitions

3
TO-247 Package Outline D PAK Package Outline
e3 100% Sn
4.69 (.185)
5.31 (.209)
1.49 (.059) 4.90 (.193) 15.85 (.624) 13.30 (.524)
(Heat Sink)

2.49 (.098) 5.10 (.201) 16.05(.632) 13.60(.535)


1.00 (.039)
Cathode

1.45 (.057)
1.60 (.063) 1.15(.045)
Cathode

12.40 (.488)
18.70 (.736) 12.70 (.500)
19.10 (.752)

0.40 (.016)
0.65 (.026)
1.20 (.047)
0.020 (.001) 1.90 (.075) 1.40 (.055)
0.40 (.016) 0.250 (.010) 2.40 (.094)
1.016 (.040) 2.10 (.083) 2.70 (.106)
2.70 (.106) 1.15 (.045)
1.45 (.057) (Base of Lead)
2.90 (.114)
5.45 (.215) BSC Heat Sink (Cathode)
(2 Plcs.) and Leads
are Plated
2.21 (.087)
2.59 (.102) Anode
Cathode
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters (Inches)

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for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The
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entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights,
1-2020

Microsemi Headquarters licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this
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053-4212 Rev D

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