9/20/2020 Absorption - Optical Communications Questions and Answers - Sanfoundry

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Optical Communications Questions and

Answers – Absorption
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This set of Optical Communications Multiple Choice Questions & Answers (MCQs) focuses on
“Absorption”.

1. The absorption of photons in a photodiode is dependent on __________

a) Absorption Coe cient α0
b) Properties of material
c) Charge carrier at junction
d) Amount of light

View Answer

Answer: a
Explanation: Absorption in a photodiode is for producing carrier pans. Thus, photocurrent is
dependent on absorption coe cient α 0of the light in semiconductor used to fabricate device.

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2. The photocurrent in a photodiode is directly proportional to absorption coe cient.

a) True
b) False

View Answer

Answer: a
Explanation: The absorption of photons produces carrier pairs. Thus, photocurrent is
dependent on absorption coe cient and is given by
I = Po e(1-h)/hf(1-exp (-α rd))
Where r = Fresnel coe cient
D = width of absorption region.

3. The absorption coe cient of semiconductor materials is strongly dependent on __________

a) Properties of material
b) Wavelength
c) Amount of light
d) Amplitude

View Answer

Answer: b
Explanation: In some common semiconductors, there is a variation in absorption curves for
materials. It is found that they are each suitable for di erent wavelength and related
applications. This is due to di erence in band gap energies. Thus absorption coe cient
depends on wavelength.

4. Direct absorption requires assistance of photon.

a) True
b) False

View Answer

Answer: b 
Explanation: Indirect absorption requires photon assistance resulting in conversation of
energy and momentum. This makes transition probability less likely for indirect absorption
than direct absorption where no photon is included.

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5. In optical ber communication, the only weakly absorbing material over wavelength band
required is?
a) GaAs
b) Silicon
c) GaSb
d) Germanium

View Answer

Answer: c
Explanation: The transition over wavelength band in silicon is due to indirect absorption
mechanism. This makes silicon weakly absorbent over particular wavelength band.

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6. The threshold for indirect absorption occurs at wavelength __________

a) 3.01 μm
b) 2.09 μm
c) 0.92 μm
d) 1.09 μm

View Answer

Answer: d
Explanation: The band gap for silicon is 4.10 eV corresponding to threshold of 0.30 μm in
ultraviolet. Thus it’s outside wavelength range is the one which is required.

7. The semiconductor material for which the lowest energy absorption takes place is?

a) GaAs
b) Silicon
c) GaSb

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d) Germanium

View Answer

Answer: d
Explanation: Germanium absorption is by indirect optical transition. The threshold for direct
absorption is at 1.53μm. Below this, germanium becomes strongly absorbing to corresponding
link.

8. The wavelength range of interest for Germanium is __________

a) 0.8 to 1.6 μm
b) 0.3 to 0.9 μm
c) 0.4 to 0.8 μm
d) 0.9 to 1.8 μm

View Answer

Answer: a
Explanation: Germanium is used in fabrication of detectors over the whole wavelength range
i.e. rst and second generation 0.8 to 1.6 μm while specially taking into consideration that
indirect absorption will occur up to a threshold of 1.85 μm.

9. A photodiode should be chosen with a ________________ less than photon energy.

a) Direct absorption
b) Band gap energy
c) Wavelength range
d) Absorption coe cient

View Answer

Answer: d
Explanation: A photodiode selection must be made by choosing that diode having band gap
energy less than photon energy corresponding to longest operating wavelength. This provides
high absorption coe cient which ensures a good response and limits the thermally generated
carriers to obtain low dark current with no incident light.

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10. ________________ photodiodes have large dark currents.

a) GaAs
b) Silicon
c) GaSb
d) Germanium

View Answer

Answer: c
Explanation: Germanium photodiodes provide narrow band gaps as compared to other
semiconductor materials. This is main disadvantage with use of germanium photodiodes at
shorter wavelength and thus they have large dark current.

11. For fabrication of semiconductor photodiodes, there is a drawback while considering

_________________
a) GaAs
b) Silicon
c) GaSb
d) Germanium

View Answer

Answer: d
Explanation: Due to drawback with germanium to be used as fabricating material, there
is an increased investigation of direct band gap III and V alloys for longer wavelength region.

12. _________________ materials are potentially superior to germanium.

a) GaAs
b) Silicon
c) GaSb
d) III – V alloys

View Answer

Answer: d
Explanation: The band gap energies for III – V alloys materials can be tailored to required
wavelength. This can be achieved by changing relative concentration of their constituents
which results in low dark currents. Thus, III – V alloys are superior potentially to germanium. 

13. ____________ alloys such as InGaAsP and GaAsSb deposited on InP and GaSb substrate.
a) Ternary
b) Quaternary
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c) Gain-guided
d) III – V alloys

View Answer

Answer: a
Explanation: Ternary alloys are used to fabricate photodiodes for longer wavelength band.
Thus, these alloys such as InGaAsP and GaAsSb are deposited on InP and GaSb substrates.

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14. _________________ alloys can be fabricated in hetero-junction structures.

a) InGaSb
b) III – V alloys
c) InGaAsP
d) GaAsSb

View Answer

Answer: b
Explanation: III – V alloys enhances the high speed operations of hetero-junction structures.
Thus these structures can be fabricated with III-V alloys.

15. The alloys lattice matched to InP responds to wavelengths up to 1.7μm is?
a) InAsSb
b) III – V alloys
c) InGaSb
d) InGaAs

View Answer

Answer: d
Explanation: Although there were di culties in growth of IOnGaAs alloys, the problems are
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now reduced. These alloys lattice matched to InP responding to wavelength around 1.7 μmare
widely utilized for fabrication of photodiodes operating around 1.7μm.

Sanfoundry Global Education & Learning Series – Optical Communications.

To practice all areas of Optical Communications, here is complete set of 1000+ Multiple Choice
Questions and Answers.

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Founder and CTO at Sanfoundry. He is Linux Kernel Developer & SAN
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