Chapter 3-1 Scattering Matrix and Microwave Network

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Chapter 3-1

Scattering Matrix and


Microwave Network
Chien-Jung Li
Department of Electronics Engineering
National Taipei University of Technology
Traveling Waves
• Introducing the notation of the voltage and current traveling
waves:
V   x   Ae  j  x and V   x   Be j  x

V  x   V   x   V   x   Ae  j  x  Be j  x

V  x V  x
I x  I x  I x 
 

Z0 Z0

• The reflection coefficient between incident and reflected


wave can be written as:
V  x
x 
V  x

2/32 Department of Electronic Engineering, NTUT


Normalized Traveling Waves
• Normalized notation of voltage and current waves:
V x
v x  and i  x   Z0 I  x 
Z0
V  x
 Normalized incident wave ax 
Z0 Introduce normalization to
V  x relate voltage with power.
 Normalized reflected wave b  x  
V   x 
2
Z0 a x 
2

v x  ax  bx Z0


10log  Pa   10log a 2  x   20log a  x 
i x  ax  bx
bx  xa x 

1 1
ax  v  x   i  x    V  x   Z0I  x 
2 2 Z0
1 1
b  x   v  x   i  x   V  x   Z0I  x 
2 2 Z0

3/32 Department of Electronic Engineering, NTUT


Two-port Network
• If instead of a one-port transmission line we have the two-port network
shown with incident wave a1  l1  and reflected wave b1  l1  at port 1
(located at x1  l1 ), and incident wave a2  l 2  and reflected wave
b2  l 2  at port 2 (located at x2  l 2 )

Input port Output port

a1  x1  a1  l1  a2  l 2  a2  x2 
Two-port
Zo1 Zo 2
b1  x1  b1  l1 
Network b2  l 2  b2  x2 

Port 1 Port 2
x1  l1 x2  l 2

At port 1 At port 1
Incident wave a1  l1  Incident wave a2  l 2 
Reflected wave b1  l1  Reflected wave b2  l 2 
4/32 Department of Electronic Engineering, NTUT
Scattering Matrix (I)
Input port Output port

a1  x1  a1  l1  a2  l 2  a2  x2 
Two-port
Zo1 Zo 2
b1  x1  b1  l1 
Network b2  l 2  b2  x2 

Port 1 Port 2
x1  l1 x2  l 2

b1  l1   S11a1  l1   S12a2  l 2 

b2  l 2   S21a1  l1   S22a2  l 2 

reflected from the ports incident to the ports


 b1  l1   S11 S12   a1  l1  
   a l 
 b2  l 2   S21 S22   2  2 

Scattering matrix Scattering parameters

5/32 Department of Electronic Engineering, NTUT


Scattering Matrix (II)
Input port Output port

a1  x1  a1  l1  a2  l 2  a2  x2 
Two-port
Zo1 Zo 2
b1  x1  b1  l1 
Network b2  l 2  b2  x2 

Port 1 Port 2
x1  l1 x2  l 2

b1  l1   S11a1  l1   S12a2  l 2 
contribution to the reflected wave b1  l1 
contribution to the reflected wave b1  l1  due to incident wave a2  l 2  at port 2
due to incident wave a1  l1  at port 1

b2  l 2   S21a1  l1   S22a2  l 2 
contribution to the reflected wave b2  l 2 
contribution to the reflected wave b2  l 2  due to incident wave a2  l 2  at port 2
due to incident wave a1  l1  at port 1
6/32 Department of Electronic Engineering, NTUT
Scattering Parameters

b1  l1 
S11  Input reflection coefficient with output properly terminated
a1  l1  a
2  l 2 0 (measured with port 2 properly terminated)

b2  l 2 
S21  Forward transmission coefficient with output properly terminated
a1  l1  a
2  l 2 0 (measured with port 2 properly terminated)

b2  l 2 
S22  Output reflection coefficient with input properly terminated
a2  l 2  a
 0 (measured with port 1 properly terminated)
1 l1

b1  l1 
S12  Reverse transmission coefficient with output properly terminated
a2  l 2  a
 0 (measured with port 1 properly terminated)
1 l1

7/32 Department of Electronic Engineering, NTUT


Return Loss and Insertion Loss
• Return Loss (RL) (折返損耗, 反射損耗)

b l  b12  l1  Pb1
S11  1 1
a1  l1  a
S  2
2
11 
a1  l1  Pa1
P 
 2
10log  b1   10log S11  20log S11 (dB)
 Pa1 
2  l 2  0

 P 
Return Loss (RL)  10log  in   20log S11 (dB)
 Preft 

• Insertion Loss (IL) (植入損耗, 插入損耗)

b l  b22  l 2  Pb 2
S21  2 2
a1  l1  a
S  2
2
21 
a1  l1  Pa1
P 
 Pa1 
 2

10log  b 2   10log S21  20log S21 (dB)
2  l 2  0

P 
Insertion Loss (IL)  10log  transmit   20log S21 (dB)
 Preceive 

8/32 Department of Electronic Engineering, NTUT


Procedure of Measuring S11
b1  l1 
S11 
a1  l1  a ZOUT
 l 2  0
2
matched

Z1  Zo1 a1  l1  a2  l 2   0
Zo1
Two-port Zo 2 Z2  Zo 2

E1 b1  l1 
Network b2  l 2 

Port 1 Port 2
x1  l1 x2  l 2

• With Z2=Zo2 the condition a2  l 2   0 is satisfied. Similar considerations


apply to measurements at the input port. Also the characteristic
impedances of the transmission lines are usually identical (i.e. Zo1=Zo2),
with a 50 Ω being the standard value.
b1  l1 
b1  l1   S11a1  l1   S12a2  l 2  S11 
a1  l1  a
0 2  l 2  0

9/32 Department of Electronic Engineering, NTUT


n-port Network (I)
ZT 1
• The transmission lines are assumed
to be lossless with characteristic a1  l1 
impedance Zoi (i=1 to n). The Zo1
scattering matrix of the n port, at b1  l1 
the unprimed reference planes, in Port 1' Port 1
the form
a2  l 2 
b   S a  Zo 2
b2  l 2 
a  2 Zo1 2  V   Zo I 
1 n-port
Port 2' Port 2 Network
b  2 Zo1 2  V   Zo I 
1

S11 S12   S1n  Zo11 2 0   0 


S   
 21 S22   S2 n   0 Zo21 2   0 
S          Zo    
1 2
    
    an  l n 
             
Sn1 Sn 2   Snn   0  1 2 
 Zon Zon
 0 
bn  l n 
Port n' Port n
10/32 Department of Electronic Engineering, NTUT
n-port Network (II)
• The [a], [b], [V], and [I] are column matrices. That is
 a1   b1  V1   I1 
a  b  V  I 
 2  2  2  2
a      b     V      I     
       
   
an  bn  Vn  In 

The S parameters of the n-port networks are easily measured.


For example S11 at x1=l1 is given by

b1  l1  ZT 1  Zo1
S11  
a1  l1  a 0 ZT 1  Zo1
j  j  2,3, ,n 

where ZT1 is the impedance seen at port 1 with the other ports matched.

11/32 Department of Electronic Engineering, NTUT


Reference Planes
• In practice, we often need to attach transmission lines to
the network under test for the measurement. Since the S
parameters are measured using traveling waves, we need
to specify the positions where the measurements are
made.

l1

l2
Device Under Test
(DUT)

Unprimed reference plane

12/32 Department of Electronic Engineering, NTUT


Shifting the Reference Planes
Primed reference plane

Unprimed reference plane

1   l1 2   l 2

a1  0  a1  l1  a2  l 2  a2  0 
S11 S12 
Zo1 S  Zo 2
b1  0  b1  l1   21 S22  b2  l 2  b2  0 

Two-port Network
Port 1' Port 1 Port 2 Port 2'
x1  0 x1  l1 x2  l 2 x2  0

 b1  l1   S11 S12   a1  l1  
• At port 1 and port 2    a l 
 l 
 2 2   21
b S S22   2  2  

 b1  0   S11    a1  0  
 S12
• At port 1' and port 2'  
   a 0 
b
 2  0  
  21
S S22   2   

 The angles 1 and  2 are the electrical lengths of the transmission line
between the primed and unprimed reference planes.
13/32 Department of Electronic Engineering, NTUT
Shifting the Reference Planes
Reference planes
a1  l1   a1  0  e  j1 1   l1 2   l 2 a2  l 2   a2  0  e  j2

a1  0  a1  l1  a2  l 2  a2  0 
S11 S12 
Zo1
S  Zo 2
b1  0  b1  l1   21 S22  b2  l 2  b2  0 

b1  l1   b1  0  e j1 b2  l 2   b2  0  e j2
Port 1' Port 1 Port 2 Port 2'
x1  0 x1  l1 x2  l 2 x2  0

 b1  0   S11    a1  0    S11e  j 21 S12e  j 12    a1  0  


 S12
        
b
 2  0    21
S S 
22   2
a  0   S21e
 j 1  2 
S22e  j 2 2 a
  2  0  

S11 S12   S11 e j 21  e j 1 2  


S12    S11e  j 21
 S12
S11 S12e  1 2  
 j  

S    S  S     
     j 1 2   j 22
e
 21 S22  S21
j 1 2
e
S22 j 2 2
  21 22  S21e S22e 

14/32 Department of Electronic Engineering, NTUT


Properties of Scattering Parameters
• In order to know the properties of scattering parameters, let’s start
with a two-port network that has two transmission lines attached at
its input and output terminals. (Without considering the source and
load)
• Find the incident power Pi   0  and reflected power Pi   0  .
(i=1 for port 1 and i=2 for port 2)

l1 l2
I1  x1  I2  x2 
Pi   0  
S11 S12 

Pi   0 
V1  x1  V2  x2  Zo 2
Zo1
S 
Pi  0 

  21 S22   Pi   0 

Port 1' Port 1 Port 2 Port 2'


x1  0 x1  l1 x2  l 2 x2  0

15/32 Department of Electronic Engineering, NTUT


Incident and Reflected Power
• Average power of incident wave on the primed ith port (x1=0, x2=0)

1 Vi  0 
2

 

1  1
Pi   0   Re Vi   0   Ii  0    ai  0   ai ,rms  0 
2 2

2 2 Zoi 2
1
Pi   0   ai  0 
2

2
• Average reflected power

1 Vi  0 
2

 

1  1
Pi   0   Re Vi   0   Ii  0   bi  0   bi ,rms  0 
2 2
 
2 2 Zoi 2
1
Pi   0   bi  0 
2

• Since the transmission lines are assumed to be lossless, we have


1 1
Pi   0   Pi   l i  ai  0   ai  xi  No power loss everywhere on the lines
2 2

2 2
1 1
Pi   0   Pi   l i  bi  0   bi  xi 
2 2

2 2
16/32 Department of Electronic Engineering, NTUT
Consider Matched Source and Load (I)
matched l1 ZT 1 l2
Z1  Zo1 I1  0  I1  l1  I2  l 2  I2  0  matched
  a1  x1    a2  x2  
Two-port
E1 V1  0  V1  l1  V2  l 2  V2  0  Z2  Zo 2
 b1  x1  Network b2  x2 
   
Vpp
Port 1' Port 1 Port 2 Port 2'
Zo1 Zo 2
x1  0 x1  l1 x2  l 2 x2  0

• At x2=0, we have V2  0   Zo 2I2  0  No reflection from load

1 1
It follows that a2  0   V2  0   Zo 2I2  0    Zo 2I2  0   Zo 2I2  0   0
2 Zo 2 2 Zo 2 

• At x1=0, we have V1  0   E1  Zo1I1  0 


2
1 E1 E1
It follows that a1  0   V1  0   Zo1I1  0    and a1  0  
2

2 Zo 1 2 Zo 1 4 Zo 1

17/32 Department of Electronic Engineering, NTUT


Consider Matched Source and Load (II)
• The power available from the source E1 with internal resistance
Z1=Zo1 is equal to the power of incident wave at x1=0:
2
1 E
 P1  0   a1  0   1
2
PAVS
2 8 Zo 1

The available power PAVS is the incident power at x1=0.

• Since the line is lossless, we have


1 1
a1  0   a1  l1 
2 2

2 2
Power available from the source is independent of
the input impedance ZT1 of the two-port network

18/32 Department of Electronic Engineering, NTUT


Mismatched Source (I)
• Consider that if Z1 is not equal to Zo1

1 V1  0   Zo1I1  0  V1  0   Zo1I1  0 
a1  0 
2

2 8Zo1
1  
1  o1 1   1   o1 1   1   o1 1   
2   2
  V 0  Z I 0 V 0  Z V 0 I 0  Z 2
I 0
8 Zo 1  

Similarly,
1 1  
b1  0              
2 2   2
V 0  Z I 0 V 0  Z I 0 V 0  Z 2
I 0
8Zo1  
1 o 1 1 1 o 1 1 1 o 1 1
2

• Power delivered to port 1', or to port 1 (since the line is lossless) is


1 1 1
P1  0   a1  0   b1  0   I1  0 V1  0   I1  0 V1  0 
2 2

2 2 4


1
2

Re I1  0 V1  0  
19/32 Department of Electronic Engineering, NTUT
Mismatched Source (II)
• Reflected power from port 1 (or port 1')
1
b1  0   PAVS  P1  0 
2

2
It can also be written as
1
b1  l1   PAVS  P1  l1 
2

2
• If ZT1=Zo1, then the reflected power is zero. However, if ZT1≠Zo1, part of
the incident power is reflected back to the generator. The net power
delivered to port 1 is
1
P1  0   P1  l1   PAVS  b1  0 
2

2
We can obtain
1 1
b2  0   V2  0   Zo 2I2  0     Zo 2I2  0   Zo 2I2  0     Zo 2 I2  0 
2 Zo 2 2 Zo 2

20/32 Department of Electronic Engineering, NTUT


Calculation of S11 and S21 (I)
• Power delivered to the load Z2 (=Zo2)
1 1
P2  0   b2  0   I2  0  Zo 2
2 2

2 2

• Calculate the S-parameter


b1  l1  V1  l1 
S11  
a1  l1  a V1  l1  V 
2  l 2  0 2  l 2  0

ZT 1  Zo1
S11 
ZT 1  Zo1
S11 is the reflection coefficient of port 1 with port 2 terminated in its
normalizing impedance Zo2. (a2=0)

• The evaluation of S11 at x1=0 (S'11) can be done using S11  S11e  j 2  l . 1

Alternately, we can calculate the input impedance at x1=0, and its


associated reflection coefficient would be S'11.

21/32 Department of Electronic Engineering, NTUT


Calculation of S11 and S21 (II)
• The ratio of the power reflected from port 1 to the power available at
port 1.
1  1 PAVS  P1  l1 
2
2 b l
S11  
a1  l1 
2
PAVS
a2  l 2  0

or
P1  l1   P1  0   PAVS 1  S11  2

• If S11  1 , the power reflected is larger than the power available at
port 1. In this case, port 1 acts as a source of power and oscillations
can occur.
• Evaluation of S21 at unprimed reference plane
b2  l 2  Zo 2 I2  l1   Zo 2 I 2  l 2 
S21   
a1  l1  a2  l 2  0
Zo1I1  l1  I  Zo1I1  l1 
2  l 2  0 I2  l 2  0

I2  l 2   I2  l 2   I2  l 2   I2  l 2  since I2  l 2   0 

22/32 Department of Electronic Engineering, NTUT


Find S Parameter by Excitation (I)
matched l1 ZT 1 l2
Z1  Zo1 I1  0  I1  l1  I2  l 2  I2  0  matched
  a1  x1    a2  x2  
Two-port
E1 V1  0  V1  l1  V2  l 2  V2  0  Z2  Zo 2
 b1  x1  Network b2  x2 
   

Port 1' Port 1 Port 2 Port 2'


Zo1 Zo 2
x1  0 x1  l1 x2  l 2 x2  0

• Thevenin’s equivalent network

E1,TH  E1e  j  l1 ZT 1
I1  l1  I2  l 2 
Zo1

  a1  l1  a2  l 2   0 
Two-port
E1,TH V1  l1  V2  l 2  Zo 2
 b1  l1  Network b2  l 2 
 

Port 1 Port 2
x1  l1 x2  l 2
23/32 Department of Electronic Engineering, NTUT
Find S Parameter by Excitation (II)
• Thevenin’s equivalent network
ZT 1
I1  l1  I2  l 2 
Zo1

  a1  l1  a2  l 2   0 
Two-port
E1,TH V1  l1  V2  l 2  Zo 2
 b1  l1  Network b2  l 2 
 

Port 1 Port 2
x1  l1 x2  l 2
• At port 1:
a1  l1  1
I1  l1    V1  l1   Zo1I1  l1  
Zo 1 2Zo1  E1,TH
I1  l1  
V1  l1   E1,TH  Zo1I1  l1  2Zo1

V2  l 2 
• At port 2: I2  l 2   S21 represents a forward voltage
Zo 2 transmission coefficient from
port 1 to port 2.
 Zo 2 I2  l 2  2 Zo1 V2  l 2 
• The S21: S21  
Zo1I1  l1  I2  l 2  0
Zo 2 E1,TH

24/32 Department of Electronic Engineering, NTUT


Find S Parameter by Excitation (III)
2
• Transducer Power Gain: GT  S21
GT represents the ratio of the power delivered to the load Zo2 (i.e., PL) to the
power available from the source E1,TH (i.e., PAVS).

1
V2  l 2 
2

2
Zo 2 2
GT  2
 S21
E1,TH
8Zo1

• If Z1 = Z2 = Zo
2
V2 PL 2 V2
S21  and GT   S21 
 E1,TH  PAVS  E1,TH 2
 2 
 

25/32 Department of Electronic Engineering, NTUT


Find S Parameter by Excitation (IV)
• Excitation at port2’ by E2 with source impedance Z2=Zo2 is placed at port 2’ and
port 1’ is matched (Z1=Zo1) we find that at the unprimed reference planes
ZT 2
l1 l2 Z2  Zo 2

a1  l1   0 a2  l 2  
Two-port
Z1  Zo1 Zo1 Zo 2 E2
b1  l1  Network b2  l 2  

Port 1' Port 1 Port 2 Port 2'


x1  0 x1  l1 x2  l 2 x2  0

b2  l 2  ZT 2  Zo 2 b1  l1  2 Zo 2V1  l1 
S22   S12  
a2  l 2  a ZT 2  Zo 2 a2  l 2  a Zo1E2,TH
1 l1  0 1 l1  0

S22 is the reflection coefficient of port 2 with port 1 terminated in its


normalizing impedance Z1= Zo1. (a1(l1)=0) , and S12 represents a reverse
voltage evaluate S’22 and S’12 at the primed reference planes.

26/32 Department of Electronic Engineering, NTUT


Find S Parameter by Excitation (V)
• Reverse Transducer Power Gain:

1
V1  l1 
2

2
2 Zo 1
S12  2
E2,TH
8 Zo 2

The S parameter of a transistor are commonly ,measured with Zo1=Zo2=Zo


and Z1 = Z2 = Zo. These S parameters are said to be measured in a Zo system.
If this transistor is then used in the circuit with arbitrary terminations Z1 and
Z2, the gain GT is no longer as given. GT can be expressed in terms of Z1, Z2,
and the S parameters of the transistor measured in a Zo system.

27/32 Department of Electronic Engineering, NTUT


Example – S Parameter of a Series Z (I)
• Evaluate the S parameters, in a Zo system, of a series impedance Z.

Port 1 Port 2

matched ZT 1
Z1  Zo matched
Z
 a1  l1  a2  l 2 
E1 Zo Zo Z2  Zo
 b1  l1  b2  l 2 

Port 1' Port 1 Port 2 Port 2'


x1  0 x1  l1 x2  l 2 x2  0

28/32 Department of Electronic Engineering, NTUT


Example – S Parameter of a Series Z (II)
• Thevenin’s equivalent network
ZT 1
Zo
Z 
 a1  l1 
E1,TH V2  l 2  Zo
 b1  l1  

Port 1 Port 2

b1  l1  ZT 1  Zo Z
(1) S11   where ZT 1  Z  Zo S11 
a1  l1  a ZT 1  Zo Z  2Zo
2  l 2  0
Zo
E1,TH
Zo V2  l 2  Z  2Zo 2Zo
(2) V2  l 2   E1,TH S21   
Z  2Zo  E1,TH 2  E1,TH 2 Z  2Zo
For symmetry, we observe that S22=S11 and S12 =S21. (Reciprocal condition)
 0.70745 0.707  45 
• For Z  j100  , and in a 50 system: S    
0.707  45 0.70745 
29/32 Department of Electronic Engineering, NTUT
Example – S Parameter of a Shunt Y (I)
• Evaluate the S parameters, in a Zo system, of a shunt admittance Y.

Port 1 Port 2

matched ZT 1
Z1  Zo matched
 a1  l1  a2  l 2 
E1 Zo Y Zo Z2  Zo
 b1  l1  b2  l 2 

Port 1' Port 1 Port 2 Port 2'


x1  0 x1  l1 x2  l 2 x2  0

30/32 Department of Electronic Engineering, NTUT


Example – S Parameter of a Shunt Y (II)
• Thevenin’s equivalent network
ZT 1
Zo

 a1  l1  
E1,TH Y V2  l 2  Zo
 b1  l1  

Port 1 Port 2

b1  l1  ZT 1  Zo 1 Zo ZoY
(1) S11   where T 1
Z  || Z  S11 
a1  l1  a ZT 1  Zo 1  ZoY 2  ZoY
o
Y
2  l 2  0

ZT 1 E1,TH V2  l 2  2
(2) V2  l 2   E1,TH  S21  
ZT 1  Zo 2  ZoY E 1,TH 2 2  ZoY

For symmetry, we observe that S22=S11 and S12 =S21. (Reciprocal condition)

 0.2 0.8 
• For Y  10 mS , and in a 50 system:   
S  
 0.8 0.2
31/32 Department of Electronic Engineering, NTUT
Summary
S11 S12 
• For a 2-port network:   S S 
S 
 21 22 

1
• Average incident power: Pi 0   ai 0 
 2

2
• Average reflected power: Pi  0   1 bi 0 
2

2
1 1
Pi   0   Pi   xi   ai  0   ai  xi 
2 2

2 2
 With lossless lines:
1 1
Pi   0   Pi   xi   bi  0   bi  xi 
2 2

2 2
1
• Available power from source: PAVS  P1  0   a1  0 
2

2
2
1 E
 With matched condition: PAVS  P  0   a1  0   1
 2
1
2 8Zo1

1 1 1
• Power delivered to port 1: P1  0   a1  0   b1  0   PAVS  b1  0 
2 2 2

2 2 2
 With lossless lines: P1  l1   P1  0   PAVS 1 S11 2 

32/32 Department of Electronic Engineering, NTUT

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