SMD Type MOSFET

N-Channel MOSFET
2SK3305-ZJ

■ Features
● VDS S = 500V
● ID = 5 A (VGS = 10V)
● RDS(ON) ＜ 1.5Ω (VGS = 10V)
● Gate voltage rating: ±30 V
● Avalanche capability ratings

Drain (D)

Body
Gate (G) Diode

Source (S)

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit
Drain-Source Voltage VDS 500
V
Gate-Source Voltage VGS ±30
Continuous Drain Current ID 5
Pulsed Drain Current (Note.1) IDM 20 A
Single Avalanche Current (Note.2) IAS 5

Tc = 25℃ 75
Power Dissipation PD W
Ta = 25℃ 1.5
Single Avalanche Energy (Note.2) EAS 125 mJ
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150

Note.1: PW ≤ 10 us, Duty Cycle ≤ 1 %

Note.2: Starting TJ = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

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 SMD Type MOSFET

N-Channel MOSFET
2SK3305-ZJ
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 500 V
Zero Gate Voltage Drain Current IDSS VDS=500V, VGS=0V 100 μA
Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA
Gate to Source Cut-off Voltage VGS(off) VDS=10V , ID=1mA 2.5 3.5 V
Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=2.5A 1.5 Ω
Forward Transconductance gFS VDS=10V, ID=2.5A 1 3 S
Input Capacitance Ciss 700
Output Capacitance Coss VGS=0V, VDS=10V, f=1MHz 115 pF
Reverse Transfer Capacitance Crss 6
Total Gate Charge Qg 13
Gate Source Charge Qgs VGS=10V, VDS=400V, ID=5A 4 nC
Gate Drain Charge Qgd 4.5
Turn-On DelayTime td(on) 16
Turn-On Rise Time tr VDD = 150 V, ID = 2.5 A, VGS(on) = 10 V, 3
Turn-Off DelayTime td(off) RG = 10 Ω, RL = 60 Ω 33 ns
Turn-Off Fall Time tf 5.5
Body Diode Reverse Recovery Time trr 600
IF= 5A, VGS=0, dI/dt= 50A/μs
Body Diode Reverse Recovery Charge Qrr 3.3 uC
Diode Forward Voltage VSD IF =5A,VGS=0V 0.9 V

■ Typical Characterisitics

Figure1. DERATING FACTOR OF FORWARD BIAS Figure2. TOTAL POWER DISSIPATION vs.
SAFE OPERATING AREA CASE TEMPERATURE
100 100
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

80 80

60 60

40 40

20 20

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tc - Case Temperature - ˚C Tc - Case Temperature - ˚C

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SMD Type MOSFET

N-Channel MOSFET
2SK3305-ZJ
■ Typical Characterisitics
Figure3. FORWARD BIAS SAFE OPERATING AREA Figure4. DRAIN CURRENT vs.
100 DRAIN TO SOURCE VOLTAGE

Pulsed
ID (pulse) PW 10
10 V
ID - Drain Current - A

=
10

ID - Drain Current - A
d 10
10 ite 0 µs VGS = 20 V 8.0 V
n)
Lim µs 8
S
(o 1m
RD ID (DC) s
Po 10
we m 6
rD s
1 iss
ip 4
at VGS = 6.0 V
io
n
Li
m
Tc = 25 ˚C ite 2
d
Single Pulse
0.1
1 10 100 1000
0 4 8 12 16
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1000
Pulsed

100
ID - Drain Current - A

10

1
TA = –25 ˚C
25 ˚C
0.1 75 ˚C
125 ˚C

0.01

0.001
0 5 10 15
VGS - Gate to Source Voltage - V

Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100
Rth(ch-A) = 62.5 ˚C/W
rth(t) - Transient Thermal Resistance - ˚C/W

10

Rth(ch-C) = 1.67 ˚C/W

1

0.1

Tc = 25 ˚C
Single Pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
PW - Pulse Width - s

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 SMD Type MOSFET

N-Channel MOSFET
2SK3305-ZJ
■ Typical Characterisitics
Figure7. FORWARD TRANSFER ADMITTANCE vs. Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT GATE TO SOURCE VOLTAGE

RDS(on) - Drain to Source On-state Resistance - Ω

10 4.0
IyfsI - Forward Transfer Admittance - S

TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C 3.0
1

ID = 5.0 A
2.0
ID = 2.5 A
0.1

1.0

VDS = 10 V
Pulsed Pulsed
0.01 0.0
0.01 0.1 1 10 100 0 5 10 15 20 25
ID - Drain Current - A VGS - Gate to Source Voltage - V

Figure9. DRAIN TO SOURCE ON-STATE Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.
RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - Ω

3.0 4.0
VGS(off) - Gate to Source Cut-off Voltage - V

Pulsed
VDS = 10 V
ID = 1 mA
3.0
2.0

2.0

1.0
1.0
.

0 0.0
0.1 1 10 100 –50 0 50 100 150 200

ID - Drain Current - A Tch - Channel Temperature - ˚C

Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs. Figure12. SOURCE TO DRAIN DIODE
RDS(on) - Drain to Source On-state Resistance - Ω

CHANNEL TEMPERATURE FORWARD VOLTAGE

3.0 100
Pulsed
ISD - Diode Forward Current - A

ID = 5.0 A
10
2.0 ID = 2.5 A

1 VGS = 10 V

1.0 VGS = 0 V
0.1

VGS = 10 V
0.0 0.01
–50 0 50 100 150
0.0 0.5 1.0 1.5
Tch - Channel Temperature - ˚C
VSD - Source to Drain Voltage - V

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SMD Type MOSFET

N-Channel MOSFET
2SK3305-ZJ
■ Typical Characterisitics
Figure13. CAPACITANCE vs. DRAIN TO Figure14. SWITCHING CHARACTERISTICS
SOURCE VOLTAGE 100
10000 tr
VGS = 0 V

td(on), tr, td(off), tf - Switching Time - ns

f = 1.0 MHz
td(off)
Ciss, Coss, Crss - Capacitance - pF

1000 Ciss td(on)

tf
10
Coss
100

10 1
Crss

1 VDD = 150 V
VGS = 10 V
RG = 10 Ω
0.1
0.1 0.1 1 10 100
1 10 100 1000 ID - Drain Current - A
VDS - Drain to Source Voltage - V

Figure15. REVERSE RECOVERY TIME vs. Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS

DRAIN CURRENT
800
2000 ID = 5.0 A

VGS - Gate to Source Voltage - V

di/dt = 100 A/µs 700 14
VDS - Drain to Source Voltage - V

1800
VGS = 0 V VGS
trr - Reverse Recovery Time - ns

1600 600 VDD = 400 V 12

250 V
1400 500 10
125 V
1200
400 8
1000
300 6
800
600 200 4
VDS
400 100 2
200
0 2 4 6 8 10 12 14
0.1 1 10 100
QG - Gate Charge - nC
IF - Drain Current - A

Figure17. SINGLE AVALANCHE ENERGY vs Figure18. SINGLE AVALANCHE CURRENT vs

STARTING CHANNEL TEMPERATURE INDUCTIVE LOAD
150 100
ID(peak) = IAS RG = 25 Ω
RG = 25 Ω VDD = 150 V
EAS - Single Avalanche Energy - mJ

IAS - Single Avalanche Current - A

125 VGS = 20 V → 0 V VGS = 20 V → 0 V

VDD = 150 V Starting Tch = 25 ˚C

100 EAS = 125 mJ 10

IAS = 5.0 A
EAS
= 12
75 5m
J

50 1

25

0 0.1
25 50 75 100 125 150 175 100 µ 1m 10 m 100 m
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - H

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