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XRF Demystified PDF
XRF Demystified PDF
Related terms:
Sputter Processing
Andrew H. Simon, in Handbook of Thin Film Deposition (Fourth Edition), 2018
X-ray fluorescence
X-ray fluorescence (XRF) is a well-established technique for materials analysis that
has been adapted for in-line semiconductor industry use [77]. The sample under
analysis is illuminated by X-rays or gamma rays, which results in the excitation of
core-level electrons to excited states. The radiative decay of these electrons from
the excited states back to their respective ground states results in the emission of
fluorescent or “secondary” X-rays that are characteristic of the energy levels of each
atomic species and thus serve as a spectroscopic fingerprint for each element present
in the sample. Product-wafer spot sizes can be as small as ~100 nm or less.
Since the XRF signal intensity for each atomic species correlates directly to the
number of atoms present, the XRF signal can be used as a direct measurement of
the thickness of metals and alloys. The primary strength of XRF as a measurement
technique lies in its ability to assess thin-film thicknesses and alloy concentrations
independent of any numerical modeling techniques. The high-frequency trans-
parency of metals means that samples of several microns thickness can be measured.
At the opposite extreme, XRF can, in theory, be used to measure arbitrarily thin layers
of <10 nm thickness. The main challenge in measuring very thin layers is the long
acquisition time needed for the XRF detector to acquire a statistically significant
number of fluorescence counts and the care needed to deconvolve any spectral
overlap coming from substrates, underlayers, etc.
There are some limitations to XRF. For rigorous quantitative results, the XRF signal
should be calibrated against known thickness standards. XRF also is less useful for
measurement of elements with low atomic numbers, typically Z<11, due to weak
fluorescence from these species. The X-ray transparency of the films in question
means that XRF generally cannot be used for depth profiling: it can measure the
thicknesses of stacked films but typically cannot tell which one is on top of the
other. Finally, care needs to be taken in selecting which spectral lines to sample since
strong spectral signals from substrates or underlayers can potentially overlap with
the thin-film signals being measured, leading to error in the estimation of the signal
strength of the latter.
13.2.3 VPD/TXRF
TXRF analysis alone, without coupling to VPD, is a surface-sensitive technique capa-
ble of detecting medium and high-Z elements (sulfur to uranium) at very low levels;
detection limits generally are in the 1010 atoms/cm2 range using a tungsten rotating
anode X-ray source. More detail on the TXRF technique is provided in Section 13.2.2.
Although this technique alone has proven successful in the determination of surface
metallic contamination on the wafer surface, the combination of VPD with TXRF
has been shown to improve the detection limit of TXRF by preconcentration of the
surface contaminants using VPD. The detection limit improvement can be estimated
from the ratio of the total wafer area to the analysis area; improvement of the
detection limit of two orders of magnitude may be achieved for a 200-mm wafer.
There are some disadvantages in using VPD with TXRF. VPD alone is a destructive
technique. TXRF without VPD preconcentration is a nondestructive technique where
the wafers are exposed only to soft X-rays that do not disturb the wafer surface,
whereas VPD preconcentration prior to TXRF completely decomposes the surface
oxide and concentrates the contaminants into one small area. Another disadvantage
of using VPD prior to TXRF is that the VPD may add contamination to the wafer
and thus produce data that are not representative of the actual contamination.
Further, using VPD assumes the contamination on the wafer surface is distributed
homogeneously on the wafer.
When performing TXRF analysis, the chemical and physical state of the wafer surface
impacts the intensity of the X-rays fluoresced; wafer roughness and the physical
structural of the metallic contamination on the wafer surface are the main factors
contributing to the intensity of the fluorescent X-rays. A classic technique used in
TXRF analysis is termed a rocking scan, which is obtained by measuring the fluores-
cent X-ray intensity as a function of primary X-ray incident angle. This measurement
can elucidate whether the contamination on the wafer surface is bulk, films, or
particles. With bulk contamination, the signal intensity increases constantly with
the sharpest increases at angles greater than the angle needed for total reflection
of the primary X-ray off the surface of the wafer. With a contaminating film, the
signal intensity increases as the angle is increased but finds a sharp drop in signal
intensity at angles higher than the angle needed for total reflection of the primary
X-ray off the surface. Finally, particulate contamination exhibits the same behavior as
uniform film contamination, except it shows higher intensity at the reflection angle
and continues to fall after the reflection angle is passed. When a wafer is prepared
by the VPD technique and the sample droplet is dried on the wafer surface, TXRF
analysis is affected by the physical state of the dried droplet on the wafer surface
and the glancing angle of the incident X-rays. Experiments [27] have shown that the
dried SCS residue is indeed particlelike, thus lower glancing-incident X-ray angles
can be utilized to produce higher intensity fluorescence from the contaminants on
the wafer surface.
Physicochemical characterization of
nanomaterials: polymorph, composi-
tion, wettability, and thermal stability
Ahmed Barhoum, ... Guy Van Assche, in Emerging Applications of Nanoparticles and
Architecture Nanostructures, 2018
3 Elemental composition
X-ray fluorescence spectrometry (XRF) is a relatively effective quantitative technique
to determine the elemental composition of any material, with trace element abun-
dances at the ppm level [21]. XRF is often used to verify the XRD data and vice versa.
The sample is excited by a primary high-energy X-ray. Characteristic X-rays of energy
lower than the incident X-rays are emitted from the sample, so-called secondary
X-rays or X-ray fluorescence (Fig. 9.7). The fluorescent X-rays are used to determine
the abundances of elements, while the intensity of these rays is proportional to the
abundance of the elements present in the sample [21]. X-rays can be characterized by
two main types of detectors. The first is wavelength dispersive detection (WDXRF),
in which the characteristic fluorescence X-rays diffracted from an element of interest
are selectively measured. The second is energy dispersive detection (EDXRF) which
detects a broad range of elements simultaneously [22]. The detectors can be adapted
to measure a broad range of elements simultaneously (i.e., EDXRF) or only the X-rays
produced by fluorescence of atoms of specific elements (i.e., WDXRF) [23]. However,
only WDXRF provides high elemental specificity and high sensitivity.
Figure 9.7. Possible interactions between X-rays and a sample for various X-Ray
techniques.(From H. Chen, M.M. Rogalski, J.N. Anker, Advances in functional X-ray
imaging techniques and contrast agents, Phys. Chem. Chem. Phys., 14(39) (2012)
13469–13486 [57]).
A movable X-Y stage and variable Z-axis source allows great flexibility with sample
size: from a single surface-mount chip to a handheld portable electronic device. A
video camera in sync with the emitter allows continuous monitoring of the position
on the sample, making it possible to locate an area of interest prior to analysis.
XRF spectrometers can operate in two main modes: material analysis mode and
thickness measurement mode [1]. The material analysis mode of the XRF spec-
trometer is capable of wide range of material analysis from aluminum (Z = 13) to
uranium (Z = 92). Material composition ranging from 0.1% to 100% can be detected
accurately. A typical XRF spectrometer system may consist of four collimators with
programmable, motorized controls. Analysis of small regions of interest on the
specimen can be achieved with the minimum XRF collimator size of 100 μm.
The XRF spectrometer thickness measurement mode provides the ability to measure
the depth of known layers of material. Each layer can be either a single element or
an alloy. The depth of penetration in XRF spectrometry varies based on the materials
used, but over 50 μm is possible.
Information about the source and energy of the fluorescent signal is contained in
Table 1.6. The X-ray tube with Rh-anode is a widespread device in this technique
field. However, in certain cases, other materials may be preferable (e.g., Mo, Cr,
Au, etc.). Generally, XRF is used to determine the concentrations of elements from
beryllium (Z = 4) to uranium (Z = 92) in the range from ppm fractions to 100% with
accuracy of 10− 7–10− 6 g. Usually, the sample weight is 0.1 g.
In WDS, for relatively long wavelengths (light elements), the gas-filled proportional
detectors (flowing or sealed) are used. Their effect is based on the gas ionization by
radiation and the measurement of electrical impulses passed through the ionized
gas. For shorter wavelengths (heavy elements), the scintillation detectors are used.
Their operations are based on the registration by photo-detector the light flashes
arising when X-rays are collided with scintillator (NaI/Tl) and measurement of
electrical impulses formed by a photomultiplier.
In sequential action WDS (with a scanning channel), the measurements are carried
out by successive selection of each of the characteristic X-ray lines of any number of
elements by means of the mobile crystal monochromator and precision goniometer.
In simultaneous action WDS (with fixed channels), the intensity of the characteristic
radiation of elements is measured simultaneously by using multiple turned fixed
channels located around the sample. In fact, each channel is a separate spectrometer
with a crystal monochromator and a detector turned to accept a certain wavelength
of one element.
In EDS the whole energy range of secondary (characteristic) radiation from the
specimen is registered simultaneously. The resulting spectrum corresponds to a
dependence of the intensity on the element's radiation energy. This is achieved by the
element-wise decomposition of the energy current of characteristic X-ray emissions
from the excited specimen.
In EDS spectrometers, the semiconductor solid-state detectors (Si or Ge) based on
the inner ionization of the semiconductor are used. During the analysis by the Peltier
effect or by liquid nitrogen, the cooling of the detector is mandatory. Voltage up to
several kV is applied to the semiconductor crystal, and it provides the gathering of
all the charges formed in the detector's inner volume. The electric pulse arises, and
it is further amplified and recorded by the counting electronics.
In the second stage, leaching was repeated from the residue on the first leaching
by using sulfuric or nitric acid in a similar way as in the first stage of leaching.
Sulfuric acid (5 M) could leach only ~50% La and Ce. Strong sulfuric acid (18 M)
was required to leach more than 90% of the metal ions as shown in Fig. 12.14A.
Removal of more than 91% La, 86% Ce, and 98% Tb was obtained by using 5 M
nitric acid. Only ~25% Pr was dissolved in 18 M sulfuric and 5 M nitric acids. The
use of a low acid concentration for leaching is preferable because a high alkaline
dosage is not required for controlling the leachate pH, which is subjected to the
extraction operation. Thus, in the two-stage leaching processes, two leachates are
obtained. One leachate is 5 M sulfuric acid that contains Y and Eu and the other is
5 M nitric acid solution that contains La, Ce, Pr, and Tb. In each leaching process,
metal impurities are also dissolved in the leachate. The leaching efficiency through
the two-stage leaching is shown in Fig. 12.14B.
Figure 12.14. Leaching efficiency from fluorescent phosphor powder. (A) Effect of
acid and concentration on second-stage leaching. (B) Total leaching degree of first
stage by 5 M H2SO4 and second stage by 5 M HNO3. Open part by first stage and
closed by second stage.
For the phosphor powder in a CRT tube, the rare-earth metals, Y and Eu, could be
leached quantitatively with 3–5 M nitric acid at room temperature, where a large
amount of Zn was dissolved simultaneously.
In Section 12.5.2, we show the application of novel IL extraction systems that we have
developed, for the recovery of rare-earth metals from real leachates.
Fig. 6.3. X-ray diffraction patterns generated by PTO thin films on atomically-flat
substrates prepared at various temperatures [3].
Fig. 6.4. The results of a scan of a PbTiO3 thin film on an atomically flat substrate
together with data for -Al2O3 (annealing temperature 1000°C) for comparison
purposes [3].
An epitaxial PTO thin film oriented solely in the (111) direction was deposited
only on the substrate annealed at 1000°C. In contrast, the films on the other two
substrates generated either a PbO (111) or pyrochlore peak in addition to the PTO
(111) peak. These other phases could possibly have resulted from the substrate
surface conditions. For this reason, it appears that single steps and flat terraces might
contribute to the deposition of an epitaxial PTO thin film.
In addition, because the number of peaks in the scan for the PTO was twice that
for an -Al2O3 reference (Fig. 6.4), the epitaxial PTO film evidently had two different
in-plane orientations.
The applications of the characterization methods discussed in this volume are broad-
ly summarized for the key types of contaminants. Sampling of the contaminants for
analysis is performed by the methods discussed in Chapter 3.