Professional Documents
Culture Documents
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP Silicon Power Darlingtons
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP Silicon Power Darlingtons
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP Silicon Power Darlingtons
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
AUGUST 1993 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.78 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
10000
-1·5
1000
-1·0
TC = -40°C
VCE = -3 V TC = 25°C
tp = 300 µs, duty cycle < 2% TC = 100°C
100 -0·5
-0·5 -1·0 -10 -0·5 -1·0 -10
IC - Collector Current - A IC - Collector Current - A
Figure 1. Figure 2.
TC = 25°C
TC = 100°C
-2·5
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5 -1·0 -10
IC - Collector Current - A
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
THERMAL INFORMATION
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 4.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5