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10 November 2019 1441 ‫ ربيع األول‬13

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Analog IC Design

Lecture 05
MOSFET Small Signal Model

Dr. Hesham A. Omran

Integrated Circuits Lab (ICL)
Electronics and Communications Eng. Dept.
Faculty of Engineering
Ain Shams University
 Outline
❑ Recapping previous key results
❑ The small signal approximation
❑ The transconductance (𝑔𝑚 )
❑ Body effect and body transconductance (𝑔𝑚𝑏 )
1
❑ Channel length modulation and output resistance (𝑟𝑜 = )
𝑔𝑑𝑠

❑ The small signal model

❑ Short channel effects

05: MOSFET AC 2
 Outline
❑ Recapping previous key results
❑ The small signal approximation
❑ The transconductance (𝑔𝑚 )
❑ Body effect and body transconductance (𝑔𝑚𝑏 )
1
❑ Channel length modulation and output resistance (𝑟𝑜 = )
𝑔𝑑𝑠

❑ The small signal model

❑ Short channel effects

05: MOSFET AC 3
 N-Channel MOSFET Structure
❑ MOSFET: Metal-oxide-semiconductor field-effect transistor
❑ Three-terminal device: Gate (G), Source (S), and Drain (D)
❑ Substrate/Bulk/Body (S/B) can be treated as a fourth terminal

G
B S D

p+ n+ n+
p-sub

05: MOSFET AC 4
 Regions of Operation Summary

OFF
ON
(Subthreshold)
𝑉𝐺𝑆 > 𝑉𝑇𝐻
𝑉𝐺𝑆 < 𝑉𝑇𝐻

Triode Pinch-Off (Saturation)

𝑉𝐷𝑆 < 𝑉𝑜𝑣 𝑉𝐷𝑆 ≥ 𝑉𝑜𝑣
Or Or
𝑉𝐺𝐷 > 𝑉𝑇𝐻 𝑉𝐺𝐷 ≤ 𝑉𝑇𝐻

𝑊 2
𝑉𝐷𝑆 𝜇𝐶𝑜𝑥 𝑊 2
𝐼𝐷 = 𝜇𝐶𝑜𝑥 𝑉𝑜𝑣 𝑉𝐷𝑆 − 𝐼𝐷 = 𝑉 1 + 𝜆𝑉𝐷𝑆
𝐿 2 2 𝐿 𝑜𝑣

05: MOSFET AC 5
 MOSFET in Saturation
❑ The channel is pinched off if the difference between the gate and
drain voltages is not sufficient to create an inversion layer
𝑉𝐺𝐷 ≤ 𝑉𝑇𝐻 𝑂𝑅 𝑉𝐷𝑆 ≥ 𝑉𝑜𝑣
❑ Square-law (long channel MOS)
𝜇𝑛 𝐶𝑜𝑥 𝑊 2
VSG > |VTH|
𝐼𝐷 = ⋅ 𝑉𝑜𝑣 1 + 𝜆𝑉𝐷𝑆
2 𝐿
VSD > |Vov|
𝑉𝑆𝐵 ↑ ⇒ 𝑉𝑇𝐻 ↑ VDG < |VTH|
VGS>VTH VGD<VTH
VSB G
B S D VGD < VTH

VDS > Vov

p+ n+ n+
p-sub VGS > VTH
VDS>Vov
05: MOSFET AC 6
 Large Signal Model
❑ The channel is pinched off if the difference between the gate and
drain voltages is not sufficient to create an inversion layer
𝑉𝐺𝐷 ≤ 𝑉𝑇𝐻 𝑂𝑅 𝑉𝐷𝑆 ≥ 𝑉𝑜𝑣
❑ Square-law (long channel MOS)
𝜇𝑛 𝐶𝑜𝑥 𝑊 2
VSG > |VTH|
𝐼𝐷 = ⋅ 𝑉𝑜𝑣 1 + 𝜆𝑉𝐷𝑆
2 𝐿
VSD > |Vov|
𝑉𝑆𝐵 ↑ ⇒ 𝑉𝑇𝐻 ↑ ID VDG < |VTH|
G D

VGS IDS ro VDS VGD < VTH

VDS > Vov

VGS > VTH
S

05: MOSFET AC 7
 Outline
❑ Recapping previous key results
❑ The small signal approximation
❑ The transconductance (𝑔𝑚 )
❑ Body effect and body transconductance (𝑔𝑚𝑏 )
1
❑ Channel length modulation and output resistance (𝑟𝑜 = )
𝑔𝑑𝑠

❑ The small signal model

❑ Short channel effects

05: MOSFET AC 8
 Small Signal Approximation
❑ The transistor is a VCCS
❑ Transconductance: how well it converts the voltage to a current
Δ𝐼𝐷 𝜕𝐼𝐷
𝑔𝑚 = =
Δ𝑉𝐺𝑆 𝜕𝑉𝐺𝑆

05: MOSFET AC [Sedra/Smith, 2015] 9

 Small Signal Model
Δ𝐼𝐷 𝜕𝐼𝐷
𝑔𝑚 = =
Δ𝑉𝐺𝑆 𝜕𝑉𝐺𝑆

Δ𝑉𝐷𝑆 1
𝑟𝑜 = =
Δ𝐼𝐷 𝜕𝐼𝐷
𝜕𝑉𝐷𝑆

G D

vgs gmvgs ro

S
05: MOSFET AC 10
 Large Signal vs Small Signal Model

G D

VGS IDS ro

S
G D

vgs gmvgs ro

S
05: MOSFET AC 11
 Outline
❑ Recapping previous key results
❑ The small signal approximation
❑ The transconductance (𝑔𝑚 )
❑ Body effect and body transconductance (𝑔𝑚𝑏 )
1
❑ Channel length modulation and output resistance (𝑟𝑜 = )
𝑔𝑑𝑠

❑ The small signal model

❑ Short channel effects

05: MOSFET AC 12
 Transconductance
❑ The transistor is a VCCS
❑ Transconductance: how well it
converts the voltage to a
current
𝜇𝑛 𝐶𝑜𝑥 𝑊 2
𝐼𝐷 ≈ ⋅ 𝑉𝑜𝑣
2 𝐿
Δ𝐼𝐷 𝜕𝐼𝐷 𝜕𝐼𝐷
𝑔𝑚 = = =
Δ𝑉𝐺𝑆 𝜕𝑉𝐺𝑆 𝜕𝑉𝑜𝑣
𝑊
= 𝜇𝐶𝑜𝑥 𝑉𝑜𝑣
𝐿
𝑊
= 𝜇𝐶𝑜𝑥 ⋅ 2𝐼𝐷
𝐿
2𝐼𝐷
=
𝑉𝑜𝑣
05: MOSFET AC [Sedra/Smith, 2015] 13
 Transconductance
𝜇𝑛 𝐶𝑜𝑥 𝑊 2
𝐼𝐷 ≈ ⋅ 𝑉𝑜𝑣
2 𝐿
𝜕𝐼𝐷 𝑊 𝑊 2𝐼𝐷
𝑔𝑚 = = 𝜇𝐶𝑜𝑥 𝑉𝑜𝑣 = 𝜇𝐶𝑜𝑥 ⋅ 2𝐼𝐷 =
𝜕𝑉𝐺𝑆 𝐿 𝐿 𝑉𝑜𝑣

𝑾/𝑳 constant 𝑽𝒐𝒗 constant 𝑰𝑫 constant

𝑔𝑚 ∝ 𝑉𝑜𝑣 𝑔𝑚 ∝ 𝑊/𝐿 𝑔𝑚 ∝ 𝑊/𝐿

𝑔𝑚 ∝ 𝐼𝐷 𝑔𝑚 ∝ 𝐼𝐷 𝑔𝑚 ∝ 1/𝑉𝑜𝑣

05: MOSFET AC 14
 Outline
❑ Recapping previous key results
❑ The small signal approximation
❑ The transconductance (𝑔𝑚 )
❑ Body effect and body transconductance (𝑔𝑚𝑏 )
1
❑ Channel length modulation and output resistance (𝑟𝑜 = )
𝑔𝑑𝑠

❑ The small signal model

❑ Short channel effects

05: MOSFET AC 15
 Body Effect
❑ 𝑉𝑆𝐵 affects the charge required to invert the channel
• Increasing 𝑉𝑆 or decreasing 𝑉𝐵 increases 𝑉𝑇𝐻
𝑉𝑇𝐻 = 𝑉𝑇𝐻0 + 𝛾 2Φ𝐹 + 𝑉𝑆𝐵 − 2Φ𝐹
• Φ𝐹 = surface potential at threshold
▪ Depends on doping level and intrinsic carrier concentration 𝑛𝑖
• 𝛾 = body effect coefficient
▪ Depends on 𝐶𝑜𝑥 and doping

VGS>VTH VGD<VTH
VSB G
B S D

p+ n+ n+
p-sub

VDS>Vov
05: MOSFET AC 16
 Bulk Transconductance
❑ The bulk behaves as a second gate that changes the output current

𝜕𝐼𝐷
𝑔𝑚𝑏 = = 𝜂𝑔𝑚
𝜕𝑉𝐵𝑆

𝜂 is typically 0.1 → 0.25

05: MOSFET AC 17
 Outline
❑ Recapping previous key results
❑ The small signal approximation
❑ The transconductance (𝑔𝑚 )
❑ Body effect and body transconductance (𝑔𝑚𝑏 )
1
❑ Channel length modulation and output resistance (𝑟𝑜 = )
𝑔𝑑𝑠

❑ The small signal model

❑ Short channel effects

05: MOSFET AC 18
 Channel Length Modulation (CLM)
❑ The VCCS is not ideal: There is some dependence on 𝑉𝐷𝑆
Δ𝑉𝐷𝑆 1 1 𝑉𝐴 1
𝑟𝑜 = = = = =
Δ𝐼𝐷 𝜕𝐼𝐷 /𝜕𝑉𝐷𝑆 𝑔𝑑𝑠 𝐼𝐷𝑆 𝜆𝐼𝐷𝑆
𝑉𝐴 : Early voltage (𝑉𝐴 ∝ 𝐿) ↔ 𝜆: Channel length modulation coefficient (𝜆 ∝ 1/𝐿)
𝑉𝐷𝑆 𝑉𝐷𝑆 /𝐼𝐷𝑆 𝜇𝐶𝑜𝑥 𝑊 2
𝐼𝐷 = 𝐼𝐷𝑆 + = 𝐼𝐷𝑆 1 + = 𝑉 1 + 𝜆𝑉𝐷𝑆
𝑟𝑜 𝑟𝑜 2 𝐿 𝑜𝑣

05: MOSFET AC [Sedra/Smith, 2015] 19

 Channel Length Modulation (CLM)
❑ 𝐿𝑒𝑓𝑓 decreases with 𝑉𝐷𝑆 → Shorter L gives more current
❑ 𝑉𝐴 : Early voltage (𝑉𝐴 ∝ 𝐿)
❑ 𝜆: Channel length modulation coefficient (𝜆 ∝ 1/𝐿)
𝜇𝐶𝑜𝑥 𝑊 2 𝑉𝐴 1
𝐼𝐷 = 𝑉 1 + 𝜆𝑉𝐷𝑆 𝑟𝑜 = =
2 𝐿 𝑜𝑣 𝐼𝐷𝑆 𝜆𝐼𝐷𝑆

❑ 𝑉𝐴 increases with 𝑉𝐷𝑆 : higher 𝑟𝑜 as we go deeper into saturation

VGS>VTH VGD<VTH
G
S D

n+ n+
Leff
p-sub
VDS>Vov
05: MOSFET AC 20
 Outline
❑ Recapping previous key results
❑ The small signal approximation
❑ The transconductance (𝑔𝑚 )
❑ Body effect and body transconductance (𝑔𝑚𝑏 )
1
❑ Channel length modulation and output resistance (𝑟𝑜 = )
𝑔𝑑𝑠

❑ The small signal model

❑ Short channel effects

05: MOSFET AC 21
 Low-Frequency Small-Signal Model
𝜕𝐼𝐷 𝑊 𝑊 2𝐼𝐷
𝑔𝑚 = = 𝜇𝐶𝑜𝑥 𝑉𝑜𝑣 = 𝜇𝐶𝑜𝑥 ⋅ 2𝐼𝐷 =
𝜕𝑉𝐺𝑆 𝐿 𝐿 𝑉𝑜𝑣

𝑔𝑚𝑏 = 𝜂𝑔𝑚 𝜂 ≈ 0.1 − 0.25

1 𝑉𝐴 1 1
𝑟𝑜 = = = 𝑉𝐴 ∝ 𝐿 ↔ 𝜆 ∝ 𝑉𝐷𝑆 ↑ 𝑉𝐴 ↑
𝜕𝐼𝐷 /𝜕𝑉𝐷𝑆 𝐼𝐷 𝜆𝐼𝐷 𝐿

G D

vgs gmvgs gmbvbs ro

vbs
S

B
05: MOSFET AC 22
 Outline
❑ Recapping previous key results
❑ The small signal approximation
❑ The transconductance (𝑔𝑚 )
❑ Body effect and body transconductance (𝑔𝑚𝑏 )
1
❑ Channel length modulation and output resistance (𝑟𝑜 = )
𝑔𝑑𝑠

❑ The small signal model

❑ Short channel effects

05: MOSFET AC 23
 Short Channel Effects: Velocity Saturation
𝜕𝐼𝐷
❑ ID-VGS quadratic: 𝑔𝑚 = = linear → 𝑔𝑚 increases with 𝑉𝐺𝑆
𝜕𝑉𝐺𝑆
𝜕𝐼𝐷
❑ ID-VGS linear: 𝑔𝑚 = = constant → 𝑔𝑚 saturates
𝜕𝑉𝐺𝑆

05: MOSFET AC [Sedra/Smith, 2015] 24

 Short Channel Effects: CLM and DIBL
❑ ID-VDS horizontal: no 𝑉𝐷𝑆 dependence → ideal current source
❑ More slope → more 𝑉𝐷𝑆 dependence → smaller 𝑟𝑜 → smaller gain

05: MOSFET AC [Weste & Harris] 25

 References
❑ A. Sedra and K. Smith, “Microelectronic Circuits,” Oxford University
Press, 7th ed., 2015
❑ B. Razavi, “Fundamentals of Microelectronics,” Wiley, 2nd ed., 2014
❑ B. Razavi, “Design of Analog CMOS Integrated Circuits,” McGraw-
Hill, 2nd ed., 2017
❑ N. Weste and D. Harris, “CMOS VLSI Design,” Pearson, 4th ed., 2010

05: MOSFET AC 26
 Thank you!

05: MOSFET AC 27