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    JUAN REYES TRONCOSO
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    11 views5 pages

    2n6759 2n6760 PDF

    Uploaded by

    JUAN REYES TRONCOSO

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
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    ae ay pe Msuese7y ona7aco q Bf i 3469674 FAIRCHILD SEMICONDUCTOR 4D 27600 DL, —— 2NG759/2N6760 Channel Power MOSFETs, Nesnomeetge compen 5.5 A, 350 V/400 V : ‘And Digeroto Divison 7-39-11 Description rosoaan | These Ges nchameesarcanent made, port inser nto ely ig wage hao topcase asses pee eivers. 19 Vas Rated at #20 V «# slicon Gate for Fast Switching Speods loss, Rosia Specified at Elevated Temperature 1 Rigoee 2Ns7s8 {Low Drive Requirements 28760 Maximum Ratings ating Rating Symbol | ___characteretie 2Ne760 2NG799 ast Voss | Bran wo Source Votane 200 380 ¥ Voor} Bran to Gate Votape 100 350 v gs 10 MS Vas | Gate to Source Volar a0 v Ta Tos | Opwatng Junction ana Ee +180 75 wo +180 *c . ‘Storage Tampere - : T.__| Mavimam Load Temperature 300 300 * \ for Soiering Purposes, 146" From Case for 10 Maximum On-State Characteristics : Few | Site Drainte Source 18 18 a i On Resitance To Oran Curent = Continuous at Te~ 25% 55 45 Contous at Te= 100°C 35 20 tow Passed aot 708 Maximum Thermal Characteraticn Fa | Thermal Resistancs 18 iar “ow tunon to Ces P| Total Power Disation Ww at To= 25% 1s 15 at Te 100" ie 0 90 Linear Derating Factor m9 08 wre its JO reed ena a aman concn ‘fmetion Sarena st Sen? aye Ma4u9u79 ooz7an o 3469674 FAIRCHILD SEMICONDUCTOR 84D 27801 Dw 2N6759/2N6760 49 1) Electrical Characterist (To= 25°C unless otherwise noted) Symbol haracerite win [wx [va 21 cratic Veenat | On Sao Rsdown Vago’ [ 7 [ves=0W, b= t0 wa Toss | Zer0 Gate Voltage Drain Current 1 mA Vos = Rated Voss. Vas 9 V 7 Ves = Reo vse Were Wet tas0 Teco | Guo Leakage Cut Fon [ oA [Vos #0 V, Vos =0 7 charactors Vesey | Gato Threshold Voltage 20 40 V__[ = 10 mA, Vos= Ves Roses | Sse Bran Sauce OnveaoancaT | "2 [ven tov nereo 79 tonto snereo +8 ease \ 26760 22_| WH35A Tox 1256 240759 38 bbe80A Ton 1286 Vase [Br Souse Grvaege v - ‘war e Vag 10 Vi p= 88 A N08 70 Vos = 10 Vilg=48 A Sts Forward Transconductance 30 | 2.0 St) | Vos=15 V, p= 35 A oy nals Characters Cox | hi Capastnce 3a0_[ m0 [oF vega, Vern Coss ‘Output Capacitance EJ ‘900 PF = Crm | Revere Fert apace a Swteting Characviate (e = 256, Apaes 0.7 ‘won| Tu-On Delay Tie o, Voo= 176 V, b= 88 A | ie Te 35_| me] Yoo 19 Roen= 18 0 ‘san tun ty Te ss [oe 4 [Fa tie [om 0; [to cae Grae wot] 8 [Wen t0 BT@A [is 216 a au ve Bauesu24 ooeza2 2 | 3469674 FAIRCHILD SEMICONDUCTOR 4D 27802 D - 2N6759/2N6760 7-39-11 Electrical Characteristics (Cont) (Te 25°C unless otherwise noted) ! cena | j ts ‘Continuous Souree Current a i = : = fe ao : Bo ee s = a

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