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Defects and Non-Stoichiometry: CCP Cations With All
Defects and Non-Stoichiometry: CCP Cations With All
DHs
n N exp
s
2kT
where ns is the number of Schottky defects per unit volume, at T K,
in a crystal with N cations and N anion sites per unit cell volume,
and DHs is the enthalpy required to form one defect.
N!
W (N n)!n!