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AOD408 N-Channel Enhancement Mode Field Effect Transistor: Features General Description
AOD408 N-Channel Enhancement Mode Field Effect Transistor: Features General Description
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G D S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16.7 25 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 40 50 °C/W
Maximum Junction-to-Case B Steady-State RθJC 1.9 2.5 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 20
4V
25 10V
16 VDS=5V
4.5V
20 3.5V
12
ID (A)
ID(A)
15 125°C
8
10
VGS=3V 25°C
4
5
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
24 1.6
VGS=4.5V VGS=10V
22
ID=18A
Normalized On-Resistance
20 1.4
RDS(ON) (mΩ)
18 VGS=4.5V
16 1.2
14 VGS=10V
12 1
10
0 5 10 15 20
0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50 1.0E+01
1.0E+00
40
ID=18A 1.0E-01
RDS(ON) (mΩ)
125°C
IS (A)
30 1.0E-02
25°C
125°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10
VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
10 1500
VDS=15V
ID=18A 1250
8
Ciss
Capacitance (pF)
1000
VGS (Volts)
6
750
4
500
Coss
2
250
Crss
0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
50
T J(Max)=150°C
RDS(ON) T A=25°C
limited 1ms 10µs 40
10.0 10ms 100µs
ID (Amps)
0.1s 30
Power (W)
1s
1.0 10s 20
T J(Max)=150°C
T A=25°C DC
10
0.1
0
0.1 1 10 100
0.001 0.01 0.1 1 10 100 1000
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F)
Ambient (Note F)
10
D=T on/T In descending order
T J,PK =T A+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=50°C/W
Thermal Resistance
0.1
PD
0.01
Single Pulse T on
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance