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04-Chap5-Internal Memory
04-Chap5-Internal Memory
Chapter 5
Internal Memory
Overview
• Dynamic RAM (DRAM) & Static RAM (SRAM)
— Properties
— Structure
— Difference
— Chip Logic
— Chip Packaging
— Module Organization
• Error Detection & Correction
— Hamming Code
— Single Error Correcting & Detecting (SEC-SED)
• Advanced DRAM Organization
— Synchronous DRAM (SDRAM)
— Double Data Rate DRAM (DDRRAM)
— Rambus RAM (RDRAM)
— Cache DRAM (CDRAM)
Semiconductor Memory
• Earlier computers had an array of doughnut-
shaped ferromagnetic loops called core used as
RAM - vanquished by microelectronics
• Two basic forms of semiconductor random access
memory are DRAM & SRAM
• Another form of semiconductor random access
memory is ROM
— ROM
— PROM
— EPROM
— EEPROM
— Flash Memory
Semiconductor Memory Types
• The details of the internal organization depend on the IC technology used and is out
of the scope of this course, except for a brief summary
Dynamic RAM
• DRAM is made with cells that store data as charge
in capacitors
• Transistor arrangement
gives stable logic state
• State 1
— C1 high, C2 low
— T1 T4 off, T2 T3 on
• State 0
— C2 high, C1 low
— T1 T4 on, T2 T3 off
• Address line transistors T5 T6
is switch
• Write – apply value to B &
compliment to B
• Read – value is on line B
SRAM v DRAM
• Both volatile
—Power needed to preserve data
• Dynamic cell
—Simpler to build, smaller
—More dense How?
—Less expensive
—Needs refresh
—Larger memory units
• Static
—Faster
—Cache
Read Only Memory (ROM)
• Permanent storage
—Nonvolatile
• Applications
—Microprogramming (see later)
—Library subroutines
—Systems programs (BIOS)
—Function tables
• Data is actually wired into the chip as part
of the fabrication process
Types of ROM (1/2)
• Read ―mostly‖
—Electrically Erasable (EEPROM)
– Takes much longer to write than read
– Write operation does not need prior erasing of cells
– Only the addressed bytes can be updated
—Flash memory
– Introduced in mid 1980s
– Erase whole memory electrically in few seconds
– Can allow to erase individual blocks but no byte level
erasure
– Can erase a section of memory in one action or flash
– One transistor per bit, so high density
Organisation in detail (1/2)
• Develop code
• First find how long the code would be
— 2k -1 >= M + K
• Say M = 8 bit
—K=3, is it ok? Or k=4 is ok?
Hamming Code (3)
• Not graded:
Do some search activity on net and find
some details about the following. Write
one paragraph about each:
—DIP
—SIMM
—DIMM
—RIMM