SEMICONDUCTOR E30A2CDS, E30A2CDR

TECHNICAL DATA STACK SILICON DIFFUSED DIODE

ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

F E

FEATURES
Average Forward Current : IO=30A.
Reverse Voltage : 200V(Min)

L2
POLARITY
E30A2CDS E30A2CDR
G
(+ Type) (- Type)

D
L1

C
B
A

MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS DIM MILLIMETERS

A _ 0.2
9.5 + E _ 0.1
3.1+
CHARACTERISTIC SYMBOL RATING UNIT B _ 0.2
8.4 + F Φ1.5
C 1.2 G R0.5
Repetitive Peak Reverse Voltage VRRM 200 V D 1 L1 _ 0.4
5+

DIM TYPE POLARITY MILLIMETERS

Average Forward Current IF(AV) 30 A S _ 1.0
19.0 +
L2
R _ 1.0
23.0 +
300
Peak 1 Cycle Surge Current IFSM A
(10ms Condition)
PD
Junction Temperature Tj -40 200
Storage Temperature Range Tstg -40 200

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage VFM IFM=100A - - 1.20 V
Reverse Voltage VRM IR=5mA 200 - - V
Repetitive Peak Reverse Current IRRM VR=200V - - 50 A
Reverse Recovery Time trr IF=-IR 100mA - - 15 S
Reverse Leakage Current Under
HIR Ta=150 , VR=VRM - - 2.5 mA
High Temperature
Temperature Resistance Rth Junction to case - 1.0 - /W

2002. 10. 9 Revision No : 1 1/1