StrongIRFETTM

IRFB7430PbF
Applications

l Brushed Motor drive applications HEXFET® Power MOSFET

l BLDC Motor drive applications
l Battery powered circuits D VDSS 40V
l Half-bridge and full-bridge topologies RDS(on) typ. 1.0mΩ
l Synchronous rectifier applications max. 1.3mΩ
c
G
l Resonant mode power supplies
ID (Silicon Limited) 409A
l OR-ing and redundant power switches
S
l DC/DC and AC/DC converters ID (Package Limited) 195A
l DC/AC Inverters
D

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt D

S
Ruggedness G

l Fully Characterized Capacitance and Avalanche

TO-220AB
SOA IRFB7430PbF
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
G D S
l RoHS Compliant, Halogen-Free*
Gate Drain Source

Ordering Information
Base Part Number Package Type Standard Pack Complete Part Number
Form Quantity
IRFB7430PbF TO-220 Tube 50 IRFB7430PbF

6.0 500
RDS(on), Drain-to -Source On Resistance (m Ω)

ID = 100A
Limited By Package
400
ID, Drain Current (A)

4.0
300

T J = 125°C
200
2.0

100

T J = 25°C
0.0 0
4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015
 IRFB7430PbF

Absolute Maximum Ratings

Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 409 c
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 289 c A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195
IDM Pulsed Drain Current d 1524
PD @TC = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw x
10lbf in (1.1N m) x
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e 760 mJ
EAS (Thermally limited) Single Pulse Avalanche Energy k 1452
IAR Avalanche Current d See Fig. 14, 15, 22a, 22b A
EAR Repetitive Avalanche Energy d mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case j ––– 0.40
RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C Reference to 25°C, ID = 1.0mA d
RDS(on)
Static Drain-to-Source On-Resistance ––– 1.0 1.3 mΩ VGS = 10V, ID = 100A g
––– 1.2 ––– VGS = 6.0V, ID = 50A g
VGS(th) Gate Threshold Voltage 2.2 ––– 3.9 V VDS = VGS, ID = 250μA
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA VDS = 40V, VGS = 0V
––– ––– 150 VDS = 40V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Internal Gate Resistance ––– 2.1 ––– Ω

Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.15mH
RG = 50Ω, IAS = 100A, VGS =10V.
„ ISD ≤ 100A, di/dt ≤ 990A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
ˆ Rθ is measured at TJ approximately 90°C..
‰ Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 54A,
VGS =10V.
* Halogen -Free since April 30, 2014

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 IRFB7430PbF

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 150 ––– ––– S VDS = 10V, ID = 100A
Qg Total Gate Charge ––– 300 460 nC ID = 100A
Qgs Gate-to-Source Charge ––– 77 ––– VDS =20V
Qgd Gate-to-Drain ("Miller") Charge ––– 98 ––– VGS = 10V g
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 202 –––
td(on) Turn-On Delay Time ––– 32 ––– ns VDD = 20V
tr Rise Time ––– 105 ––– ID = 30A
td(off) Turn-Off Delay Time ––– 160 ––– RG = 2.7Ω
tf Fall Time ––– 100 ––– VGS = 10V g
Ciss Input Capacitance ––– 14240 ––– pF VGS = 0V
Coss Output Capacitance ––– 2130 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 1460 ––– ƒ = 1.0 MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) i ––– 2605 ––– VGS = 0V, VDS = 0V to 32V i
Coss eff. (TR) Effective Output Capacitance (Time Related) h ––– 2920 ––– VGS = 0V, VDS = 0V to 32V h
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 394 c A MOSFET symbol D

(Body Diode) showing the

G
ISM Pulsed Source Current ––– ––– 1576 A integral reverse
(Body Diode) d p-n junction diode.
S

VSD Diode Forward Voltage ––– 0.86 1.2 V TJ = 25°C, IS = 100A, VGS = 0V g
dv/dt Peak Diode Recovery f ––– 2.7 ––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
trr Reverse Recovery Time ––– 52 ––– ns TJ = 25°C VR = 34V,
––– 52 ––– TJ = 125°C IF = 100A
Qrr Reverse Recovery Charge ––– 97 ––– nC TJ = 25°C di/dt = 100A/μs g
––– 97 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 2.3 ––– A TJ = 25°C

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 IRFB7430PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 4.8V 4.8V
BOTTOM 4.5V BOTTOM 4.5V

100

10 4.5V

4.5V

≤60μs PULSE WIDTH ≤60μs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 10
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics

1000 2.0
ID = 100A

RDS(on) , Drain-to-Source On Resistance

1.8 VGS = 10V
ID, Drain-to-Source Current (A)

1.6
100
(Normalized)

1.4
T J = 25°C

1.2
TJ = 175°C
10
1.0

VDS = 25V 0.8

≤60μs PULSE WIDTH
1.0 0.6
2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100120140160180

VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature

100000 14.0
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED ID= 100A
C rss = C gd 12.0
VGS, Gate-to-Source Voltage (V)

VDS= 32V
C oss = C ds + C gd
VDS= 20V
10.0
C, Capacitance (pF)

Ciss
8.0
10000
Coss 6.0
Crss
4.0

2.0

1000 0.0
1 10 100 0 50 100 150 200 250 300 350 400
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage

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1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

1000 100μsec
100 1msec

100
10 10msec
Limited by package

T J = 25°C 10

1
1 Tc = 25°C DC
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100

VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)

Fig 9. Typical Source-Drain Diode Fig 10. Maximum Safe Operating Area
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)

47 2.5
Id = 1.0mA
VDS= 0V to 32V
46
2.0
45

1.5
Energy (μJ)

44

43 1.0

42
0.5
41

40 0.0
-60 -40 -20 0 20 40 60 80 100120140160180 0 5 10 15 20 25 30 35 40 45
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical COSS Stored Energy

6.0
RDS(on), Drain-to -Source On Resistance ( mΩ)

VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
4.0 VGS = 8.0V
VGS =10V

2.0

0.0
0 200 400 600 800 1000 1200
ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

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1
Thermal Response ( Z thJC ) °C/W

D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01

0.001
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)

100

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth

800 Notes on Repetitive Avalanche Curves , Figures 14, 15:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
700 BOTTOM 1.0% Duty Cycle
Purely a thermal phenomenon and failure occurs at a temperature far in
ID = 100A
EAR , Avalanche Energy (mJ)

excess of Tjmax. This is validated for every part type.

600 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
500 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
400 during avalanche).
6. Iav = Allowable avalanche current.
300 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
200 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
100 ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

0 PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

25 50 75 100 125 150 175 Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature

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 IRFB7430PbF
4.0 12
IF = 60A
VGS(th) , Gate threshold Voltage (V)

3.5 10 V R = 34V
TJ = 25°C

3.0 TJ = 125°C
8

IRRM (A)
2.5 ID = 250μA 6
ID = 1.0mA
2.0 ID = 1.0A 4

1.5 2

1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000
T J , Temperature ( °C ) diF /dt (A/μs)

Fig 17. Threshold Voltage vs. Temperature Fig. 18 - Typical Recovery Current vs. dif/dt

12 300
IF = 100A IF = 60A
10 V R = 34V V R = 34V
TJ = 25°C 250
TJ = 25°C
TJ = 125°C TJ = 125°C
8
200
IRRM (A)

QRR (nC)

150
4

100
2

0 50
0 200 400 600 800 1000 0 200 400 600 800 1000
diF /dt (A/μs) diF /dt (A/μs)
Fig. 19 - Typical Recovery Current vs. dif/dt Fig. 20 - Typical Stored Charge vs. dif/dt
260
IF = 100A
V R = 34V
220
TJ = 25°C
TJ = 125°C
180
QRR (nC)

140

100

60
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt

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 IRFB7430PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

VGS=10V *
ƒ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor
InductorCurrent
Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
VGS
tp 0.01Ω
I AS

Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms
RD
V DS VDS

V GS
90%
D.U.T.
RG
+
- V DD

V10V
GS 10%
Pulse Width ≤ 1 µs VGS
Duty Factor ≤ 0.1 %
td(on) tr t d(off) tf

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Current Regulator Id
Same Type as D.U.T. Vds

Vgs
50KΩ

12V .2μF
.3μF

+
V
D.U.T. - DS
Vgs(th)
VGS

3mA

IG ID
Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr

Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
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 IRFB7430PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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 IRFB7430PbF

Qualification information†
Qualification level Industrial
(per JEDEC JESD47F††guidelines)
Moisture Sensitivity Level TO-220 Not applicable
RoHS compliant Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comment
• Updated data sheet with new IR corporate template.
4/22/2014 • Updated package outline and part marking on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
• Updated EAS (L =1mH) = 1452mJ on page 2
2/19/2015
• Updated note 9 “Limited by TJmax , starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 54A, VGS =10V”. on page 2

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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