Optical investigation of Hg 0.8 Cd0.

2Te/CdTe multiple quantum wire laser

Mohammed Hamad Jassam

Affiliation??????

Abstract
The optoelectronic properties of Hg 0.8 Cd02Te/CdTe quantum wire laser are investigated, with emphasis on
the effect of wire width (W( and barrier width (B) on the confinement factor. The optical gain and effect of
well number on the confinement factor have been calculated. The laser system has been studied in two case,
the number of well (2 and 3). It is found of our theoretical study, the values affecting the work of a multiple
laser system operating a number of well N w =2 was W= 65 nm, B = 40 nm, the value of optical confinement

factor equals Г= 0.055 and amount of optical threshold gain is gth =38 cm−1. Furthermore, the suitable values
for multi quantum wire system is running a number of well N w =¿ 3 was W= 42 nm , B = 60 nm, optical

confinement factor Г= 0.048 and the threshold gain gth =40 cm−1. Theoretism??? was found to be the effect
of the optical confinement factor that caused a reflectivity of the laser beam in the cavity therefore decrease
in the amount of optical threshold gain, note that the amount of reflection was installed to study the change
of other electronic characteristics of the multiple quantum wire.

Keywords: Quantum wire; Confinement factor; Optical gain; Wire width; Barrier width.

1. Introduction
1
 HgCdTe is still one of the key components of infrared sensing industry. The market demand as well
as other competitive technologies make higher requirements for improving the HgCdTe heterostructure
parameters [1]. Several properties of HgCdTe qualify it as highly useful for infrared detection. These are:
* Adjustable bandgap from 0.7 to 25 µm.
* Direct bandgap with high absorption coefficient.
* Moderate dielectric constant/index of refraction.
* Moderate thermal coefficient of expansion.
* Availability of wide bandgap lattice-matched substrates for epitaxial growth.
We discuss each of these key properties. Infrared detection in HgCdTe begins with the excitation of an
electron from the valence band into the conduction band. Photoconductive devices have been built in the US
as early as 1964 at Texas Instruments [2]. 
The minimum photon energy required is equal to the bandgap, Eg. The bandgap of Hg 1−x Cd xTe is a
function of the alloy composition ratio “x” of CdTe to HgTe, and the temperature of material (T). A number
of equations have been developed to summarize the empirically measured relationship. One of these,
developed by Hansen et al is given by the expression: [2]
01 −4
T )1-2x(35
E =−
203.0
g 39.1
+ x18.0
− x 2+
238.0 x 3+.5
------ (1)

………………………….. (1)

The intrinsic carrier concentration is given by [3]:  .❑❑

− E g T( ,x ) .q
−3 −3 41 57.0 5.1 2Tk
=) (
n iT( ,x585.5 28.3
− 357.1
x+ ( ×01 463.1
T) − ×01 ).
T .x 01 .E g(T ,x ) .T .e
…………………………… (2)

where k  is Boltzmann's constant,  q is the elementary electric charge, T is the material temperature, x is the
percentage of cadmium concentration, and Eg is the bandgap.

The refractive index γ r for Hg X Cd1− X Te can be calculated from the following formula [4]

(3724.4
)r --------
γ= 716.3
− 550.2
x+ x2

…………………………………(3)

The goal of this work is to quantify theoretically the quantum wire laser parameters of optical confinement
factor, wire width, Barrier width and the threshold gain.

Improvement of the performance such as high-speed modulation toward theoretical limit, advanced
application of wavelength and polarization and utilization of photonic integration is expected. Exciting
challenge will be continued for the next breakthrough in photonic device technology [5]. The simple p-n
junction is called homojunction, p type and n type materials are same material (p-n regions have the same
band- gap energies , but a p-n junction is called heterojunction, when p type and n type materials are
difference (p,n) regions have different band gap energies [6]. There are two types of heterostructure laser,
Single heterojunction (SH) consists of p-type and n-type different semiconductor materials and band gap
energy. In double heterojunction laser, a low band gap material which is sandwiched between two high
band gap material [7]. The development of the physics and technology of semiconductor heterostructure has
brought about tremendous changes in our every day’s lives [8]. When two semiconductors with different
band structures are combined, a heterojunction is formed, a p-n heterojunction is called a diode. Electrons
and holes transfer to the other side, because of different Fermi level respectively. They recombine with each
2
other, leaving the p-side with negative charge and n-side with positive charge [9]. In recent years DH lasers
have been fabricated with very thin active layers thickness of around 10 nm. The occupation states available
for confined electrons and holes are no longer continuous but discrete [10]. Such a structure called quantum well
(QW) laser. Fig. (2a) shows quantum well structure with one active region which called single quantum well (SQW)
laser, and those with multiple active regions are called multi quantum well (MQW) lasers as shown in Fig. (2b) [9].

Check the figure upon!

Fig.1 P-N junction.

The improved performance of (QW) laser diode with respect to equivalent bulk heterostructure devices led
to the consideration of lower-dimensional structures, e.g, quantum wires (QWR) and quantum dots (QDs),
as the natural evolution path toward the ultimate semiconductor laser device [11].

2. Theoretical part
A confinement factor Γ, can be defined as a ratio of the intensity of the light existing in the relevant
layer to the total light intensity. Because light intensity, i.e. the fraction of the electromagnetic energy of the
guided mode that exists within the active layer, is an important parameter representing the extent to the
active layer. Γ for a fundamental mode is approximately given by [12];
w
2
∫|E ( x )| dx
0
Γ =¿ ∞ (4)
∫ ¿ E( x)∨² dx
−∞

The confinement factor, is the fraction of the electromagnetic energy of the guided mode that exists within
the active layer, is an important parameter representing the extent to the active layer for a
fundamental modes approximately-given [9] :
,

1
w
D=2 π
λ ( )
2 2 2
. ( na−nc ) (5)

D2
Γ Qw = 2 (SQW) (6)
D +2

. Γ QWR =Γ Q w . N w . F (MQWR) (7)

3
 W
F= Λ ( (8)

Fig. 2 Schematic structure of the Bragg fiber: core radius; n, refractive index of core; B, barrier and
w, well width; Λ =B+W, period in the cladding [13].

Fig. 3 The distribution of light intensity.

where n a is the refractive indices of the active layer,n c is the refractive indices of the cladding layer, wis the
wire width, and D is the normalized waveguide thickness of the active region. (г Qw ), ( г QwR ) is the
confinement factor of quantum well and quantum wire respectively. Nw is the number of well., F is the in
the wire width, and D is the normalized waveguide thickness of the active region. (г Qw ), ( г QwR ) is the
confinement factor of quantum well and quantum wire respectively. Nw is the number of well, F is the in-
plane space filling factor of the active region, Λ is a period of quantum wire, F=1 for QW.

There is indication of Fig’s 2 & 3 into text!

Optical gain is defined as the growth ratio of light intensity (photon density) per unit length of light
propagation. Like the optical absorption coefficient αo, the optical gain coefficient g is given in inverse
centimeters (1/cm). An incoming photon can either be absorbed or generate gain. Photon absorption causes
the transition of an electron from a lower to a higher energy band, creating an electron–hole pair. Gain is
generated by stimulated recombination of an existing electron–hole pair, creating a second photon. The
second photon exhibits the same wavelength and the same phase as the first photon, doubling the amplitude
of the monochromatic wave [14]. Subsequent repetition of this process leads to strong light amplification.
However, the competing process is the absorption of photons by the generation of new electron–hole pairs.

4
Stimulated emission prevails when more electrons are present at the higher energy level (conduction band)
than at the lower energy level (valence band). This inversion of the carrier population can be achieved at pn-
junctions by providing conduction band electrons from the n-doped side and valence band holes from the p-
doped side. At low injection current, band-to-band absorption still dominates and the optical gain g is below
zero. At the transparency current, both processes are equally strong, the gain is zero, and the material is
transparent. Even stronger current causes net amplification of light.

The optical gain is proportional to the probability that a given photon triggers an electron
transition from a higher energy level j to a lower energy level i. The photon energy hν must be equal to the
transition energy Eij = E j − Ei [14]. .
.

The local gain at threshold can be obtained from the following relation [15]

1 1 1
G th= (
Γ QW )
α wG + ln (9)
L R

3. Results and discussion

The semiconductor material has a high refractive index value range between (3-4). In order to obtain various
parameters for the Hg 1−X Cd X Te material by using the following Table 1.

Table 1 Properties of Hg1−X Cd X Te fraction.

Values Unit
wave length λ 2200 nm
Energy gap E g for x=0.2 0.1546 ev
Energy gap E g for x=0.6 0.7120 ev
Refractive index γ a for x=0.2 3.7858
Refractive index γ s for x=0.6 2.99
Cavity Length 2 mm
Reflectivity 0.3 cm−1

The band gap energy can be calculated by using eq.(1) so that the relationship is plotted between
energy gap and Mercury Cadimum Telliride Hg 1−X Cd X Te mole fraction. These results drawn as shown in
Fig. 4 at room temperature 300 k and 85 k.

5
 2
T1=300 k
T2=85 k
eV

1.5
E n e rg y g a p

0.5

-0.5
0 0.2 0.4 0.6 0.8 1
Hg(1-x)Cd(x)Te Fraction

Fig. 4 Energy gap as a function of Hg 1−X Cd X Te.

The refractive index is calculated according to eq. (3). It has been found to have high value of
approximation 4. Figure 5 shows the graphical relationship between the refractive index of Hg 1−X Cd X Te as
a function of mole fraction x . In addition to, through the two Fig’s 4 and 5 have been studying the main
properties of the material and its effect in this study and the work of the device. The magnitude of resistivity
proportional directly with the refractive of index, that means when the refractive of index is high, the
resistivity also be high. Although The amount of wavelength resulting from the operation of the device and
determines the range of its work, if it is in the infrared or visible light.

8.4

6.4

4.4

2.4

8.3

6.3
x e d ni f o e vit c arf e R

4.3

2.3

8.2
0 2.0 4.0 6.0 8.0 1
noitcarF eTdCgH

Fig. 5 The refractive of index as a function of Hg 1−X Cd X Te fraction.

6
 The parameters affecting the amount of a confinement factor (Г) are the wire width and barrier width
shown in Fig. 6. From eq. (5), eq. (6), and eq. (7), the effect of barrier width on the confinement factor was
calculated. For different values of wire width (20, 30, 42, 55, 65, 70,75, 80) nm, and number of well equal to
( N w =¿2), the confinement factor (Г) is drawn as a function of barrier width (B). In Fig. 6, for wire width
less than (W = 65 nm), the confinement factor (Г) is increasing slightly with the increase of the barrier width
(B). But for wire width of W= 65 nm), the confinement factor is approximately constant at (Г= 0.055) for
the same barrier width range. In addition, when wire width > 65 nm, the confinement factor (Г) is decreases
with the increase of the barrier width (B). We choose wire width 65 nm.

90.0
02=1xW
03=2xW
80.0 24=3xW
55=4xW
56=5xW
70.0 07=6xW
57=7xW
08=8xW
60.0

50.0 mn 56 =W , 2 =wN
eTdCgH eriW mutnauQ
40.0

30.0
t n e m e n if n o c e h T

20.0

10.0

0
0 5 01 51 02 52 03
mn W htdiW reirraB ehT
r ot c af

Fig. 6 The optical confinement factor (Г) as a function of barrier width (B) for Hg 1−X Cd X / CdTe .

At the same time, in Fig. 7 we will repeat the calculations by using the same parameters in the
program to calculate the confinement factor ( Г ) and the value of wire width (20, 30, 42, 55, 65, 70,75, 80)
nm, but using number of well ( N w =¿3 ) . We found that at value less than of (W = 42 nm), the
confinement factor also increasing and at value more than 43 nm the confinement factor decreases but in
case W= 42 nm the line is constant, that means the confinement factor is nearly constant equal to (Г =
0.048). We choose wire width W= 42 nm.

7
 fa c to r
0.18
W x1=20
W x2=30
0.16 W x3=42
W x4=55
W x5=65
T h e c o n fi n e m e n t

0.14 W x6=70
W x7=75
W x8=80
0.12

0.1 Nw= 3 , W = 42 nm
Quantum W ire HgCdTe
0.08

0.06

0.04

0.02

0
0 5 10 15 20 25 30
The Barrier Width W nm

Fig. 7 The optical confinement factor (Г) as a function of barrier width (B) for Hg 1−X Cd X / CdTe .

From Fig. 8, the Barrier width (B) was calculated by the graphical relation between the confinement
factor of multiple quantum wire with barrier width at the number of well ( N w =¿2), and wire width (W = 65
nm). we found the point of the intersection with the x- axis, which represents the presentation of the amount
of the column- based the confinement factor of (0.055), with a determination of the amount of the barrier
width equal to (B = 40 nm).

21.0
RWQS
RWQM
11.0

1.0
mn 56 = W , 2 = w N
RWQ , eTdCgH
90.0

80.0

70.0

mn 04 = B
60.0
t n e m e ni f n o C

50.0

40.0

30.0
r ot c a F

20.0
0 02 04 06 08 001 021
mn B htdiW reirraB

Fig. 8 The optical confinement factor (Г) as a function of barrier width (B) for Hg 1−X Cd X / CdTe .

At the same way, we found the barrier width by using the value of confinement factor (Г = 0.4), the
number of well ( N w =¿3), and drawn curved to the value of wire width (W= 42 nm). we found the
8
magnitude of barrier equal to (B = 60 nm). From Fig’s 8 and 9, we conclude that with increasing the barrier
width decreases the confinement factor (Г), that means the proportional between them is inverse.

52.0
RWQS
RWQM

mn 24 = W , 3 = w N
2.0
RWQ , eTdCgH

51.0

mn 06 = B
1.0
t n e m e nif n o C

50.0

0
0 02 04 06 08 001 021
mn B htdiW reirraB
r ot c a F

Fig. 9 The optical confinement factor (Г) as a function of barrier width (B) for Hg 1−X Cd X /CdTe .

From Fig. 10, we observed that the best values for the device's work are to the barrier width between
(9- 100) nm, where the number of wells equal to ( N w =¿2) and the best value when B= 40 nm.

9
 52.0
540.0
2 RWQS
= wN , mn 04 = B
2 = wN , mn 001 = B RWQS
RWQM eTdCgH
eTdCgH RWQM
40.0

2.0
530.0

30.0
51.0

520.0

20.0
1.0

510.0

rotcaF tnemenifnoC
rotcaF tnemenifnoC

10.0
50.0

500.0

0 0
0 01 02 03 04 05 06 07 08 09 001 0 05 001 051 002 052 003
mn W htdiw eriW mn W htdiw eriW

Fig. 10 The optical confinement factor (Г) as a function of wire width (W) for Hg 1−X Cd X /CdTe .

On the other hand, Fig. 11, we observed that the best values for the device's work are to the barrier
width between (1- 130) nm, where the number of wells equal to ( N w =¿3) and the best value when B= 60 nm

10
 50.0 21.0
RWQS RWQS
3 = wN , mn 031 = B 3 = wN , mn 06 = B
RWQM RWQM
540.0eTdCgH eTdCgH

1.0
40.0

530.0
80.0

30.0

520.0 60.0

20.0

40.0
rotcaF tnemenifnoC

rotcaF tnemenifnoC
510.0

10.0
20.0

500.0

0 0
0 01 02 03 04 05 06 07 08 0 01 02 03 04 05 06 07 08 09 001
mn W htdiw eriW mn W htdiw eriW

Fig. 11 The optical confinement factor (Г) as a function of wire width (W) for Hg 1−X Cd X /CdTe of Barrier
(60, 130) nm and N w =¿3.

We noticed the less value of the confinement factor through the theoretical schemes values of it in
the two cases number of well ( N w =¿2) , and ( N w =¿3 ) . This is all clear in Fig. 12.

70.0 81.0

RWQS
61.0
60.0 RWQM RWQS
RWQM
2 = w N , mn 1 =B
eriW mutnauQ , eTdCgH 41.0
3 = wN , mn 1 =B
50.0 eriW mutnauQ , eTdCgH
21.0

40.0
1.0

80.0
30.0

60.0
tn e me nifn o C
t n e m e nif n o C

20.0

40.0

10.0
20.0
rotc a F
r otc a F

0 0
0 02 04 06 08 0 02 04 06 08
mn W htdiw eriW mn W htdiw eriW

Fig. 12 The optical confinement factor ( Г ) as a function of wire width ( W ) for Hg 1−X Cd X /CdTe in two
cases ( N w =¿2 ) , and ( N w =¿3 ).
11
 We also studied another property of the main properties of quantum wire in the Nano scale. The
optical confinement factor (Г) can be calculated by eq. (9). Fig’s 13 and 14 have explained the relation
between the threshold gain and the optical confinement factor. As the increase in the wire width caused an

increase in the confinement factor and the increase in the confinement factor caused a decrease in the gain,
the proportionality is inverse according to Fig. 13 and Fig. 14. When the barrier width is 60 nm, the gain
amount for a system that has a number of well ( N w =¿2) is equal to ( g th =38 cm−1). While when the system
includes a number of well ( N w =¿3), the gain is equal to ( g th =40 cm−1 ) .

0001
RWQS
RWQM
009
mn 06 = B , 2 = wN
RWQ , eTdCgH
008

007

006
1-mc 83 = ht g

005

004

003
d l o h s er ht ni a g e h T

002

001

0
0 10.0 20.0 30.0 40.0 50.0 60.0
rotcaF tnemenifnoC

Fig. 13 The threshold gain gth as a function of the optical confinement factor (Г).
1 - m c ht g

0001
RWQS
RWQM
009
mm 2 = L , mn 04 = B , 3 = wN
008
RWQ , eTdCgH

007

006

005
1-mc 24 = ht g

004

003
d l o h s er ht n i a g e h T

002

001

0
0 20.0 40.0 60.0 80.0 1.0
rotcaF tnemenifnoC

Fig. 14 The threshold gain gth as a function of the optical confinement factor (Г).
1 - m c ht g

12
 The increasing of the wire width causes the increase of the optical confinement factor, and the
decrease of the threshold gain. As well as an increase in reflection because the reverse proportion. So the
proportional between the reflectivity and the optical confinement factor is directly.

001
57

07
09
mn 04 = B , 2 = wN mn06 = B , 3 = wN
56
RWQM ,mn 56 = W RWQM ,mn 24 = W
eTdCgH 08 eTdCgH
06

55 07

05
06
54

04 05

)1-mc( g niag dlohserhT

)1-mc( g niag dlohserhT

53
04
03

52 03
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 1 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 1
1R ytivitcelfeR 1R ytivitcelfeR

Fig. 14 The threshold gain gth as a function of the reflectivity (R).

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14