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FQPF7N80C FQPF7N80C
FQPF7N80C FQPF7N80C
FQPF7N80C FQPF7N80C
FQP7N80C / FQPF7N80C
N-Channel QFET® MOSFET
800 V, 6.6 A, 1.9 Ω
Description Features
This N-Channel enhancement mode power MOSFET is • 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar ID = 3.3 A
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 27 nC)
resistance, and to provide superior switching performance • Low Crss (Typ. 10 pF)
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power • 100% Avalanche Tested
factor correction (PFC), and electronic lamp ballasts.
G G
D G
S TO-220 D
S TO-220F
Thermal Characteristics
Symbol Parameter FQP9N90C FQPF9N90CT Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.75 2.25 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.93 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 800 V, VGS = 0 V -- -- 10 µA
Zero Gate Voltage Drain Current
VDS = 640 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 3.3 A -- 1.57 1.9 Ω
On-Resistance
gFS Forward Transconductance VDS = 50 V, ID = 3.3 A -- 5.5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 1290 1680 pF
Coss Output Capacitance f = 1.0 MHz -- 120 155 pF
Crss Reverse Transfer Capacitance -- 10 13 pF
Switching Characteristics
td(on) Turn-On Delay Time -- 35 80 ns
VDD = 400 V, ID = 6.6 A,
tr Turn-On Rise Time -- 100 210 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 50 110 ns
(Note 4)
tf Turn-Off Fall Time -- 60 130 ns
Qg Total Gate Charge VDS = 640 V, ID = 6.6 A, -- 27 35 nC
Qgs Gate-Source Charge VGS = 10 V -- 8.2 -- nC
Qgd Gate-Drain Charge (Note 4) -- 11 -- nC
VGS
Top : 15.0 V
1 10.0 V
10
8.0 V 1
7.0 V 10
6.5 V
6.0 V
Bottom : 5.5 V o
150 C
0
10
o
o -55 C
25 C
0
10
-1
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃ ※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
-2 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10
4.0
3.5 10
1
Drain-Source On-Resistance
3.0
VGS = 10V
RDS(ON) [Ω ],
150℃ 25℃
※ Notes :
1.5 1. VGS = 0V
※ Note : TJ = 25℃ 2. 250μ s Pulse Test
-1
1.0 10
0 3 6 9 12 15 18 0.2 0.4 0.6 0.8 1.0 1.2 1.4
2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 160V
Crss = Cgd
10 VDS = 400V
1500 Ciss
VDS = 640V
VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
1000 Coss 6
※ Notes :
1. VGS = 0 V 4
2. f = 1 MHz
500
Crss 2
※ Note : ID = 6.6A
0 0
10
-1 0
10 10
1 0 5 10 15 20 25 30
1.2 3.0
2.5
Drain-Source Breakdown Voltage
1.1
Drain-Source On-Resistance
BV DSS , (Normalized)
RDS(ON) , (Normalized)
2.0
1.0 1.5
1.0
0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μA 0.5 1. VGS = 10 V
2. ID = 3.3 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
2 2
10 10
Operation in This Area Operation in This Area
is Limited by R DS(on) 10 µs is Limited by R DS(on) 10 µs
1
100 µs 1 100 µs
10 10
1 ms 1 ms
ID, Drain Current [A]
ID, Drain Current [A]
10 ms 10 ms
DC
0 0
10 10 DC
-1 -1
10 ※ Notes : 10 ※ Notes :
o o
1. TC = 25 C 1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse
-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP7N80C for FQPF7N80C
6
ID, Drain Current [A]
0
25 50 75 100 125 150
TC, Case Temperature [℃]
0
10
0 .2
※ N o te s :
-1 1 . Z θ J C (t) = 0 .7 5 ℃ /W M a x .
10
0 .1 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .0 5
PDM
0 .0 2
0 .0 1 t1
s in g le p u ls e t2
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
0 D = 0 .5
10
0 .2 ※ N o te s :
1 . Z θ J C (t) = 2 .2 5 ℃ /W M a x .
0 .1 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
-1
0 .0 5
10
PDM
0 .0 2
0 .0 1 t1
t2
s in g le p u ls e
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
DUT
IG = const.
3mA
Charge
RL VDS
VDS 90%
VGS VDD
RG
10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off
L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)
V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time
VDS
I SD
L
Driver
RG
Same Type
as DUT VDD
IRM
VSD VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
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